JP2014033123A - Polishing device - Google Patents

Polishing device Download PDF

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JP2014033123A
JP2014033123A JP2012173618A JP2012173618A JP2014033123A JP 2014033123 A JP2014033123 A JP 2014033123A JP 2012173618 A JP2012173618 A JP 2012173618A JP 2012173618 A JP2012173618 A JP 2012173618A JP 2014033123 A JP2014033123 A JP 2014033123A
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polishing
workpiece
pad
chuck table
time
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JP6086670B2 (en
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Susumu Hayakawa
晋 早川
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Disco Corp
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Disco Abrasive Systems Ltd
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a polishing device in which a desired amount even of a new polishing pad, exchanged just before, can be polished and removed.SOLUTION: A polishing device for polishing a workpiece includes a chuck table for holding the workpiece rotatably, polishing means having a polishing pad for polishing a workpiece held on the chuck table, and control means for controlling at least the polishing means and the chuck table, so as to polish the workpiece by the polishing means for a first predetermined polishing time and to polish and remove a desired amount thereof. The control means stores an exchange timing of exchanging a polishing pad to a new one, and performs practice polishing of the workpiece for a second predetermined time immediately after exchange of the polishing pad and before polishing the workpiece, and then polishes the workpiece by the polishing means for the first predetermined polishing time.

Description

本発明は、半導体ウエーハ等の被加工物を研磨する研磨装置に関する。   The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer.

ＩＣ、ＬＳＩ等の複数のデバイスが分割予定ラインによって区画されて表面に形成された半導体ウエーハは、研削装置によって裏面が研削されて所定の厚みに加工された後、ダイシング装置によって個々のデバイスに分割され、分割されたデバイスは携帯電話、パソコン等の各種電気機器に利用されている。   A semiconductor wafer formed on the front surface by dividing a plurality of devices such as IC, LSI, etc. by dividing lines is ground to a predetermined thickness by a grinding machine and then divided into individual devices by a dicing machine The divided devices are used for various electric devices such as mobile phones and personal computers.

研削装置によってウエーハの裏面を研削すると、裏面に研削痕が残存するとともに微細なクラックが形成され、ダイシング装置によってダイシングされたデバイスの抗折強度を低下させるという問題がある。   When the back surface of the wafer is ground by the grinding device, grinding marks remain on the back surface and fine cracks are formed, and there is a problem that the bending strength of the device diced by the dicing device is lowered.

そこで、例えば特開２０１１−２０６８８１号公報に開示されたような研磨装置を使用して、ウエーハの裏面を所定時間研磨することにより、研削痕及び微細なクラックを除去してデバイスの抗折強度を向上させることが行われている。   Therefore, for example, by using a polishing apparatus as disclosed in Japanese Patent Application Laid-Open No. 2011-206881, the back surface of the wafer is polished for a predetermined time to remove grinding marks and fine cracks, thereby increasing the bending strength of the device. Improvements are being made.

しかし、新品の研磨パッドに交換した直後に研磨加工する被加工物では、所定時間研磨しただけでは通常より研磨除去量が少なくなり、所望量を研磨除去できない。これは、新品の研磨パッドでは、研磨面のコンディションが整っておらず、最適な研磨が遂行されないためと推測される。   However, in a workpiece to be polished immediately after replacement with a new polishing pad, a polishing removal amount becomes smaller than usual only by polishing for a predetermined time, and a desired amount cannot be removed by polishing. This is presumed to be because a new polishing pad does not have a polished surface condition, and optimal polishing cannot be performed.

そこで、従来は、所定時間被加工物に研磨加工を施した後、被加工物の厚みを測定して除去量の不足分に応じてその都度追加で研磨加工を施すようにしていた。   Therefore, conventionally, after the workpiece is polished for a predetermined time, the thickness of the workpiece is measured, and additional polishing is performed each time according to the shortage of the removal amount.

特開２０１１−２０６８８１号公報JP 2011-206881 A

しかし、従来の方法のように、新品の研磨パッドに交換した直後に研磨加工する被加工物に対して、所定時間研磨した後、被加工物の厚みを測定して除去量の不足分に応じて再度追加で研磨加工するのでは非常に手間が掛かるうえ、作業効率が悪いという問題がある。   However, as in the conventional method, the workpiece to be polished immediately after replacement with a new polishing pad is polished for a predetermined time, and then the thickness of the workpiece is measured to meet the shortage of the removal amount. In addition, there is a problem that additional polishing is very troublesome and the work efficiency is poor.

本発明はこのような点に鑑みてなされたものであり、その目的とするところは、新品に交換直後の研磨パッドでも所望量を研磨除去できる研磨装置を提供することである。   The present invention has been made in view of these points, and an object of the present invention is to provide a polishing apparatus capable of polishing and removing a desired amount even with a polishing pad that has just been replaced with a new one.

本記載の発明によると、被加工物を研磨する研磨装置であって、被加工物を回転可能に保持するチャックテーブルと、該チャックテーブルに保持された被加工物を研磨する研磨パッドを有する研磨手段と、少なくとも該研磨手段と該チャックテーブルとを制御して、第１所定研磨時間の間該研磨手段で被加工物を研磨して所望量を研磨除去する制御手段と、を具備し、該制御手段は、該研磨パッドを新品に交換した交換タイミングを記憶し、該研磨パッドが新品に交換された直後、被加工物を研磨する前に、第２所定時間のならし研磨を被加工物に施した後、該第１所定研磨時間の間該研磨手段で被加工物を研磨することを特徴とする研磨装置が提供される。   According to the present invention, a polishing apparatus for polishing a workpiece, a polishing table having a chuck table for rotatably holding the workpiece and a polishing pad for polishing the workpiece held on the chuck table Control means for controlling at least the polishing means and the chuck table, and polishing a workpiece by the polishing means for a first predetermined polishing time to polish and remove a desired amount, The control means stores the replacement timing when the polishing pad is replaced with a new one, and immediately after the polishing pad is replaced with a new one, the polishing is performed for a second predetermined time before polishing the workpiece. Then, a polishing apparatus is provided in which the workpiece is polished by the polishing means for the first predetermined polishing time.

好ましくは、制御手段は、被加工物の種類と研磨パッドの種類に応じて必要なならし研磨時間を示す表を有している。   Preferably, the control means has a table showing the required polishing time according to the type of workpiece and the type of polishing pad.

本発明の研磨装置によると、研磨パッドを新品に交換した直後に加工する被加工物においては、被加工物の種類と研磨パッドの種類に応じて決定される第２所定時間のならし加工を実施した後、第１所定時間の間研磨加工が施されるため、除去量の不足分が生じる恐れを低減できる。よって、作業効率を悪化させる恐れを低減できる。   According to the polishing apparatus of the present invention, the workpiece to be processed immediately after the polishing pad is replaced with a new one is subjected to the leveling process for the second predetermined time determined according to the type of the workpiece and the type of the polishing pad. Since the polishing process is performed for the first predetermined time after the execution, the risk of a shortage of the removal amount can be reduced. Therefore, the risk of deteriorating work efficiency can be reduced.

本発明実施形態に係る研磨装置の斜視図である。1 is a perspective view of a polishing apparatus according to an embodiment of the present invention. 半導体ウエーハの表面に表面保護テープを貼着する様子を示す斜視図である。It is a perspective view which shows a mode that a surface protection tape is stuck on the surface of a semiconductor wafer. 被加工物の種類と研磨パッドの種類に応じて設定されるならし加工時間を示す表の一例である。It is an example of the table | surface which shows the leveling process time set according to the kind of workpiece and the kind of polishing pad.

以下、本発明の実施形態を図面を参照して詳細に説明する。図１を参照すると、本発明実施形態に係る研磨装置２の外観斜視図が示されている。４は研磨装置２のベースであり、ベース４の後方にはコラム６が立設されている。コラム６には、上下方向に伸びる一対のガイドレール８が固定されている。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, an external perspective view of a polishing apparatus 2 according to an embodiment of the present invention is shown. Reference numeral 4 denotes a base of the polishing apparatus 2, and a column 6 is erected on the rear side of the base 4. A pair of guide rails 8 extending in the vertical direction is fixed to the column 6.

この一対のガイドレール８に沿って研磨ユニット（研磨手段）１０が上下方向に移動可能に装着されている。研磨ユニット１０は、スピンドルハウジング１２と、スピンドルハウジング１２を保持する支持部１４を有しており、支持部１４が一対のガイドレール８に沿って上下方向に移動する移動基台１６に取り付けられている。   A polishing unit (polishing means) 10 is mounted along the pair of guide rails 8 so as to be movable in the vertical direction. The polishing unit 10 includes a spindle housing 12 and a support portion 14 that holds the spindle housing 12, and the support portion 14 is attached to a moving base 16 that moves up and down along a pair of guide rails 8. Yes.

研磨ユニット１０は、スピンドルハウジング１２中に回転可能に収容されたスピンドル１８と、スピンドル１８を回転駆動するモータ２０と、スピンドル１８の先端に固定されたヘッドマウント２２と、ヘッドマウント２２に着脱可能に装着された研磨ヘッド２４とを含んでいる。   The polishing unit 10 includes a spindle 18 rotatably accommodated in a spindle housing 12, a motor 20 that rotationally drives the spindle 18, a head mount 22 fixed to the tip of the spindle 18, and a detachable attachment to the head mount 22. And a mounted polishing head 24.

研磨ヘッド２４は、基台２５と、基台２５に接着された研磨パッド２６とから構成される。研磨パッド２６は、不織布又は発砲ウレタン樹脂から形成されている。研磨ヘッド２４は、研磨液を供給せずに実施するドライポリッシュ、又は研磨液を供給しながら実施する化学的機械研磨（ＣＭＰ）の両方に適用することができる。   The polishing head 24 includes a base 25 and a polishing pad 26 bonded to the base 25. The polishing pad 26 is formed from a nonwoven fabric or a foamed urethane resin. The polishing head 24 can be applied to both dry polishing performed without supplying a polishing liquid, or chemical mechanical polishing (CMP) performed while supplying a polishing liquid.

研磨装置２は、研磨ユニット１０を一対の案内レール８に沿って上下方向に移動するボールねじ２８とパルスモータ３０とから構成される研磨ユニット送り機構３２を備えている。パルスモータ３０を駆動すると、ボールねじ２８が回転し、移動基台１６が上下方向に移動される。   The polishing apparatus 2 includes a polishing unit feed mechanism 32 including a ball screw 28 that moves the polishing unit 10 in the vertical direction along a pair of guide rails 8 and a pulse motor 30. When the pulse motor 30 is driven, the ball screw 28 rotates and the moving base 16 is moved in the vertical direction.

ベース４の上面には凹部４ａが形成されており、この凹部４ａにチャックテーブル機構３４が配設されている。チャックテーブル機構３４はチャックテーブル３６を有しており、チャックテーブル３６は図示しない移動機構によりウエーハ着脱位置Ａと、研磨ユニット１０に対向する研磨位置Ｂとの間でＹ軸方向に移動される。   A recess 4a is formed on the upper surface of the base 4, and a chuck table mechanism 34 is disposed in the recess 4a. The chuck table mechanism 34 has a chuck table 36, and the chuck table 36 is moved in the Y-axis direction between a wafer attaching / detaching position A and a polishing position B facing the polishing unit 10 by a moving mechanism (not shown).

３８，４０は蛇腹である。ベース４の前方側には、研磨装置２のオペレータが研磨条件等を入力する操作パネル４２が配設されている。   38 and 40 are bellows. An operation panel 42 is provided on the front side of the base 4 so that an operator of the polishing apparatus 2 inputs polishing conditions and the like.

図２を参照すると、半導体ウエーハ１１の表面に保護テープ２３を貼着する様子を示す斜視図が示されている。半導体ウエーハ１１は、表面１１ａと裏面１１ｂとを有しており、表面１１ａにＩＣ，ＬＳＩ等のデバイス１５が格子状に形成された分割予定ライン（ストリート）１３によって区画されて形成されている。   Referring to FIG. 2, a perspective view showing a state where the protective tape 23 is stuck on the surface of the semiconductor wafer 11 is shown. The semiconductor wafer 11 has a front surface 11a and a back surface 11b. The semiconductor wafer 11 is formed by dividing the device 11 such as an IC or LSI on the front surface 11a by planned division lines (streets) 13 formed in a lattice shape.

半導体ウエーハ１１は、複数のデバイス１５が形成されたデバイス領域１７と、デバイス領域１７を囲繞する外周余剰領域１９とその表面１１ａに有している。半導体ウエーハ１１はシリコンから形成されており、２１はシリコンの結晶方位を示すマークとしてのノッチである。   The semiconductor wafer 11 has a device region 17 in which a plurality of devices 15 are formed, an outer peripheral surplus region 19 that surrounds the device region 17, and a surface 11a thereof. The semiconductor wafer 11 is made of silicon, and 21 is a notch as a mark indicating the crystal orientation of silicon.

研磨装置２による研磨加工に先立って、半導体ウエーハ１１の裏面１１ｂを研削して半導体ウエーハ１１を所定の厚みに加工する裏面研削ステップが実施される。この裏面研削ステップを実施する前に、図２に示すように、半導体ウエーハ１１の表面１１ａには表面１１ａに形成されたデバイス１５を保護するための表面保護テープ２３が貼着される。   Prior to polishing by the polishing apparatus 2, a back surface grinding step is performed in which the back surface 11b of the semiconductor wafer 11 is ground to process the semiconductor wafer 11 to a predetermined thickness. Before performing this back surface grinding step, as shown in FIG. 2, a surface protection tape 23 for protecting the device 15 formed on the surface 11 a is attached to the surface 11 a of the semiconductor wafer 11.

研削装置のチャックテーブルで表面保護テープ２３側を吸引保持しながら研削装置の研削ホイールにより半導体ウエーハ１１の裏面１１ｂが研削されて、半導体ウエーハ１１は所定の厚みに研削加工される。   The back surface 11b of the semiconductor wafer 11 is ground by the grinding wheel of the grinding device while the surface protection tape 23 side is sucked and held by the chuck table of the grinding device, and the semiconductor wafer 11 is ground to a predetermined thickness.

研削を実施すると、半導体ウエーハ１１の裏面１１ｂに微細なクラック等の研削歪が残存するため、この研削歪を除去して半導体ウエーハ１１の抗折強度を向上するために研磨装置２を使用した研磨が実施される。   When grinding is performed, grinding strain such as fine cracks remains on the back surface 11 b of the semiconductor wafer 11. Therefore, polishing using the polishing apparatus 2 is performed to remove the grinding strain and improve the bending strength of the semiconductor wafer 11. Is implemented.

以下、研磨装置２の作用について概略的に説明する。ウエーハ着脱位置Ａに位置付けられたチャックテーブル３６で研削済みのウエーハ１１の表面保護テープ２３側を吸引保持し、図示しない移動機構によりチャックテーブル３６を研磨ユニット１０に対抗する研磨位置Ｂに移動する。   Hereinafter, the operation of the polishing apparatus 2 will be schematically described. The chuck table 36 positioned at the wafer attaching / detaching position A sucks and holds the surface protection tape 23 side of the ground wafer 11 and moves the chuck table 36 to the polishing position B that opposes the polishing unit 10 by a moving mechanism (not shown).

研磨位置Ｂでは、半導体ウエーハ１１の裏面１１ｂの全面を研磨パッド２６の研磨面で覆った状態で、チャックテーブル３６を所定速度で回転させるとともに、研磨パッド２６をチャックテーブルと同一方向に異なる周速で回転させ、半導体ウエーハ１１の研削済みの裏面１１ｂを研磨する。所定時間研磨を実施すると、ウエーハ１１の裏面１１ｂの所望量を研磨により除去することができる。   At the polishing position B, the chuck table 36 is rotated at a predetermined speed with the entire back surface 11b of the semiconductor wafer 11 covered with the polishing surface of the polishing pad 26, and the peripheral speed of the polishing pad 26 is different in the same direction as the chuck table. And the ground back surface 11b of the semiconductor wafer 11 is polished. When polishing is performed for a predetermined time, a desired amount of the back surface 11b of the wafer 11 can be removed by polishing.

ウエーハ１１の研磨を継続して実施すると、研磨パッド２６が摩耗する。よって、研磨パッド２６が所定量以上摩耗すると望ましい研磨加工が実施できないため、研磨ヘッド２４を新品の研磨パッド２６が装着された研磨ヘッド２４に交換する。   When the polishing of the wafer 11 is continued, the polishing pad 26 is worn. Accordingly, when the polishing pad 26 is worn by a predetermined amount or more, a desired polishing process cannot be performed. Therefore, the polishing head 24 is replaced with a polishing head 24 to which a new polishing pad 26 is attached.

このように新品の研磨パッド２６が装着された研磨ヘッド２４に交換した場合には、チャックテーブル３６でドレスボードを吸引保持し、ドレスボードで新品の研磨パッド２６のドレスを実施する。   In this way, when the polishing head 24 is replaced with the new polishing pad 26, the dress board is sucked and held by the chuck table 36, and the new polishing pad 26 is dressed by the dress board.

このようなドレスを実施しても、新品の研磨パッド２６では、研磨面のコンディションが整っていないため、最適な研磨を遂行することができない。よって、本発明の研磨装置では、所定時間の研磨加工を実施する前に、研磨加工と同一加工条件のならし加工を実施する。   Even if such dressing is performed, the new polishing pad 26 cannot perform optimum polishing because the condition of the polishing surface is not ready. Therefore, in the polishing apparatus of the present invention, the leveling process under the same processing conditions as the polishing process is performed before performing the polishing process for a predetermined time.

このならし加工時間は、研磨パッド２６の種類と被加工物の種類に応じて変化するため、例えば図３に示すように、研磨パッドＡ〜Ｃと被加工物１〜５に応じて最適なならし加工時間を実験により求め、図３に示した表の関係を操作パネル４２により入力して研磨装置２の図示しないコントローラ（制御手段）のメモリに格納する。   Since the leveling time varies depending on the type of the polishing pad 26 and the type of the workpiece, for example, as shown in FIG. 3, the optimum processing time is optimum depending on the polishing pads A to C and the workpieces 1 to 5. The leveling processing time is obtained by experiment, and the relationship of the table shown in FIG. 3 is input by the operation panel 42 and stored in the memory of a controller (control means) (not shown) of the polishing apparatus 2.

また、研磨パッド２６を新品に交換すると、オペレータが操作パネル４２を操作してその交換時期を入力し、研磨装置２のコントローラが研磨パッド２６が新品に交換されたこと及びその時期を記憶する。   When the polishing pad 26 is replaced with a new one, the operator operates the operation panel 42 to input the replacement time, and the controller of the polishing apparatus 2 stores that the polishing pad 26 is replaced with a new one and the time.

よって、本発明の研磨装置２では、研磨パッド２６が新品に交換された直後には、図３の表に応じて所定時間のならし研磨が被加工物に施される。ならし研磨実施後、予め定められた所定時間の研磨加工が被加工物に施され所望量を研磨により除去する。   Therefore, in the polishing apparatus 2 of the present invention, immediately after the polishing pad 26 is replaced with a new one, the workpiece is subjected to leveling polishing for a predetermined time according to the table of FIG. After the leveling polishing, the workpiece is subjected to polishing for a predetermined time, and a desired amount is removed by polishing.

例えば、被加工物がシリコンウエーハ１１の場合には、ならし研磨時間は研磨パッドの種類に応じて大きく変化し、例えば、ならし研磨時間は１０〜１２００秒の間であるのが好ましい。より好ましくは、１００〜６００秒の間である。   For example, when the workpiece is a silicon wafer 11, the leveling polishing time varies greatly depending on the type of the polishing pad. For example, the leveling polishing time is preferably between 10 and 1200 seconds. More preferably, it is between 100 and 600 seconds.

研磨パッド及び被加工物の種類に応じて、ならし研磨を研磨パッドを新品に交換した直後の最初の被加工物のみに実施すればよい場合もあり、交換直後の複数枚の被加工物にならし研磨を実施するのが好ましい場合もある。   Depending on the type of polishing pad and workpiece, leveling polishing may be performed only on the first workpiece immediately after replacing the polishing pad with a new one. It may be preferable to perform leveling.

例えば、図３に示した被加工物５の場合には、研磨パッドＡ〜Ｃの何れでもならし研磨に非常に長時間を要しているので、研磨パッド２６を新品に交換直後の複数枚の被加工物にならし研磨を実施するのが好ましい。この場合、２枚目以降の被加工物に対しては、ならし研磨時間を短縮するのが好ましい。   For example, in the case of the workpiece 5 shown in FIG. 3, it takes a very long time for leveling and polishing of any of the polishing pads A to C. It is preferable to carry out leveling polishing on the workpiece. In this case, it is preferable to shorten the leveling polishing time for the second and subsequent workpieces.

一方、研磨パッドＡで被加工物１〜３をならし研磨する場合には、研磨パッド２６を新品に交換直後の最初の被加工物にのみならし研磨を実施すれば十分である。ならし研磨実施後には、コントローラのメモリに格納された所定の研磨時間に基づいて、ならし研磨に引き続いて所定時間通常の研磨加工が実施される。   On the other hand, when leveling and polishing the workpieces 1 to 3 with the polishing pad A, it is sufficient to perform leveling polishing on the first workpiece immediately after replacement of the polishing pad 26 with a new one. After the leveling polishing, a normal polishing process is performed for a predetermined time following leveling polishing based on the predetermined polishing time stored in the memory of the controller.

２ 研磨装置
１０ 研磨ユニット
１１ 半導体ウエーハ
２４ 研磨ヘッド
２６ 研磨パッド
３６ チャックテーブル
４２ 操作パネル 2 Polishing apparatus 10 Polishing unit 11 Semiconductor wafer 24 Polishing head 26 Polishing pad 36 Chuck table 42 Operation panel

Claims (3)

被加工物を研磨する研磨装置であって、
被加工物を回転可能に保持するチャックテーブルと、
該チャックテーブルに保持された被加工物を研磨する研磨パッドを有する研磨手段と、
少なくとも該研磨手段と該チャックテーブルとを制御して、第１所定研磨時間の間該研磨手段で被加工物を研磨して所望量を研磨除去する制御手段と、を具備し、
該制御手段は、
該研磨パッドを新品に交換した交換タイミングを記憶し、
該研磨パッドが新品に交換された直後、被加工物を研磨する前に、第２所定時間のならし研磨を被加工物に施した後、該第１所定研磨時間の間該研磨手段で被加工物を研磨することを特徴とする研磨装置。 A polishing apparatus for polishing a workpiece,
A chuck table that rotatably holds the workpiece;
Polishing means having a polishing pad for polishing the workpiece held on the chuck table;
Control means for controlling at least the polishing means and the chuck table, polishing the workpiece by the polishing means for a first predetermined polishing time, and polishing and removing a desired amount;
The control means includes
Store the replacement timing when the polishing pad is replaced with a new one,
Immediately after the polishing pad is replaced with a new one and before the workpiece is polished, the workpiece is subjected to the second polishing for a second predetermined time, and then the polishing means covers the workpiece for the first predetermined polishing time. A polishing apparatus for polishing a workpiece. 前記制御手段は、被加工物の種類と研磨パッドの種類に応じて必要なならし研磨時間を示す表を有する請求項１記載の研磨装置。   The polishing apparatus according to claim 1, wherein the control means includes a table indicating a leveling polishing time required according to a type of a workpiece and a type of a polishing pad. 前記研磨パッドは不織布又は発砲ウレタン樹脂から構成され、被加工物はシリコンウエーハから構成され、
前記ならし研磨時間は、１０〜１２００秒である請求項１又は２記載の研磨装置。 The polishing pad is composed of a nonwoven fabric or foamed urethane resin, and the workpiece is composed of a silicon wafer,
The polishing apparatus according to claim 1, wherein the leveling polishing time is 10 to 1200 seconds.
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CN112372508A (en) * 2020-11-09 2021-02-19 西安奕斯伟硅片技术有限公司 System and method for trimming edge polishing pad
US11188050B2 (en) * 2017-04-21 2021-11-30 Disco Corporation Management Method of processing tool

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US11188050B2 (en) * 2017-04-21 2021-11-30 Disco Corporation Management Method of processing tool
CN112372508A (en) * 2020-11-09 2021-02-19 西安奕斯伟硅片技术有限公司 System and method for trimming edge polishing pad

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