JP2014010880A - データ記憶装置、磁気書込要素、および方法 - Google Patents
データ記憶装置、磁気書込要素、および方法 Download PDFInfo
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- JP2014010880A JP2014010880A JP2013109698A JP2013109698A JP2014010880A JP 2014010880 A JP2014010880 A JP 2014010880A JP 2013109698 A JP2013109698 A JP 2013109698A JP 2013109698 A JP2013109698 A JP 2013109698A JP 2014010880 A JP2014010880 A JP 2014010880A
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- Prior art keywords
- magnetic
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- write pole
- storage device
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Magnetic Record Carriers (AREA)
Abstract
【解決手段】書込磁極は極低温の基板温度にて所定の第1の粒径に調節される。また磁気シールド194は極低温の基板温度にて所定の第2の粒径に調節される。
【選択図】図4
Description
本開示のさまざまな実施態様は一般的に、データ記録の向上が可能である磁気要素に向けられる。
データ容量がより多く、転送速度がより高く、かつ信頼度がより高いデータ記憶装置に向かって産業が進歩するに従って、製品設計は、データ記憶媒体からのデータアクセス速度を増加させつつデータビットのサイズを低減することに集中している。このような極めて小さい動作環境を正確なタイミングウィンドウと組み合わせると、さまざまなデータ読込および書込要素の磁気挙動がさらに重要視され得ることになる。たとえば、データビットがプログラムされた後で残余磁束が存在する場合、電力が与えられていない磁気書込機が、データビットを意図せず消去する束を発するので、書込後消去(erase after write;EAW)状態が起こり得る。
Claims (20)
- 極低温の基板温度にて所定の粒径へ調節される書込磁極を含む、データ記憶装置。
- 前記基板温度は室温を下回る、請求項1に記載のデータ記憶装置。
- 前記基板温度は約50ケルビンである、請求項1に記載のデータ記憶装置。
- 前記書込磁極は、単一の連続層である、請求項1に記載のデータ記憶装置。
- 前記書込磁極はFeCoである、請求項1に記載のデータ記憶装置。
- 前記所定の粒径は、2.4テスラのFeCo材料またはFeCoNi材料に対応する、請求項1に記載のデータ記憶装置。
- 前記基板温度は、前記書込磁極が配置される基板層について維持される、請求項1に記載のデータ記憶装置。
- 前記基板層は、NiFe、CoFe、CoNiFe、Ru、Co、Au、およびPdの群のうちの1つである、請求項7に記載のデータ記憶装置。
- 前記粒径は、前記書込磁極についての約8Oeの保磁力の磁化容易軸に一致する、請求項1に記載のデータ記憶装置。
- 前記粒径は、前記書込磁極についての1Oe未満の保磁力の磁化困難軸に一致する、請求項1に記載のデータ記憶装置。
- 前記粒径は、前記書込磁極についての約23Oeの一軸異方性に一致する、請求項1に記載のデータ記憶装置。
- 磁気シールドに隣接する書込磁極を含み、前記書込磁極および磁気シールドは、極低温の基板温度にて形成されて第1および第2の所定の粒径を提供する、磁気書込要素。
- 前記磁気シールドは、前記書込磁極とは異なる材料から形成される、請求項12に記載の磁気書込要素。
- 前記磁気シールドおよび書込磁極は別個に形成される、請求項12に記載の磁気書込要素。
- 前記磁気シールドは、NiFE、CoNiFe、NiFeO、NiFeNb、および結晶材料の群から選択される材料を含む、請求項12に記載の磁気書込要素。
- 前記第1および第2の所定の粒径は約200オングストロームである、請求項12に記載の磁気書込要素。
- 基板を極低温の基板温度に調節するステップと、
書込磁極を前記基板上に配置するステップとを含み、前記書込磁極は前記極低温の基板温度と一致する所定の粒径を有する、方法。 - 前記書込磁極に隣接して形成される磁気シールドは、室温まで温められ、その後、磁気シールド欠陥を低減するよう約400℃で約2時間アニールされる、請求項17に記載の方法。
- スパッタリングされた磁気シールド材料の横方向の移動度を低減するよう通常の磁束の入射のスパッタリング構成を有する高速スパッタリングにより、所定の粒径を有する磁気シールドを前記基板上に配置するステップをさらに含む、請求項17に記載の方法。
- 電気めっき、エピタキシー、または真空蒸着のために、微小粒径を有するシード層を配置するステップをさらに含む、請求項17に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/539,026 | 2012-06-29 | ||
US13/539,026 US9142226B2 (en) | 2012-06-29 | 2012-06-29 | Thin film with tuned grain size |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014010880A true JP2014010880A (ja) | 2014-01-20 |
Family
ID=48193177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013109698A Pending JP2014010880A (ja) | 2012-06-29 | 2013-05-24 | データ記憶装置、磁気書込要素、および方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9142226B2 (ja) |
EP (1) | EP2680264A1 (ja) |
JP (1) | JP2014010880A (ja) |
KR (1) | KR101553920B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160028971A (ko) | 2014-09-04 | 2016-03-14 | 도쿄엘렉트론가부시키가이샤 | 처리 장치 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6077133B2 (ja) * | 2013-11-18 | 2017-02-08 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
US9856557B1 (en) | 2016-01-22 | 2018-01-02 | Seagate Technology Llc | Fabrication of a multi-layered magnetic element |
US11031032B1 (en) * | 2017-04-03 | 2021-06-08 | Seagate Technology Llc | Cryogenic magnetic alloys with less grain refinement dopants |
US11377749B1 (en) | 2017-10-17 | 2022-07-05 | Seagate Technology Llc | Electrodeposition of high damping magnetic alloys |
US11152020B1 (en) * | 2018-05-14 | 2021-10-19 | Seagate Technology Llc | Electrodeposition of thermally stable alloys |
JP7160705B2 (ja) * | 2019-01-28 | 2022-10-25 | 株式会社東芝 | 電磁波減衰体及び電子装置 |
Citations (3)
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JPS63311613A (ja) * | 1987-06-11 | 1988-12-20 | Hitachi Ltd | 薄膜磁気ヘツド |
JP2002151760A (ja) * | 2000-11-09 | 2002-05-24 | Tdk Corp | 磁気抵抗効果素子の製造方法および成膜装置 |
JP2004295987A (ja) * | 2003-03-26 | 2004-10-21 | Tdk Corp | 薄膜磁気ヘッドおよび磁気記録装置 |
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2012
- 2012-06-29 US US13/539,026 patent/US9142226B2/en active Active
-
2013
- 2013-05-01 EP EP13166113.4A patent/EP2680264A1/en not_active Withdrawn
- 2013-05-24 JP JP2013109698A patent/JP2014010880A/ja active Pending
- 2013-06-27 KR KR1020130074498A patent/KR101553920B1/ko not_active IP Right Cessation
Patent Citations (3)
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JPS63311613A (ja) * | 1987-06-11 | 1988-12-20 | Hitachi Ltd | 薄膜磁気ヘツド |
JP2002151760A (ja) * | 2000-11-09 | 2002-05-24 | Tdk Corp | 磁気抵抗効果素子の製造方法および成膜装置 |
JP2004295987A (ja) * | 2003-03-26 | 2004-10-21 | Tdk Corp | 薄膜磁気ヘッドおよび磁気記録装置 |
Cited By (1)
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KR20160028971A (ko) | 2014-09-04 | 2016-03-14 | 도쿄엘렉트론가부시키가이샤 | 처리 장치 |
Also Published As
Publication number | Publication date |
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KR20140002529A (ko) | 2014-01-08 |
US9142226B2 (en) | 2015-09-22 |
CN103531209A (zh) | 2014-01-22 |
KR101553920B1 (ko) | 2015-09-17 |
US20140004387A1 (en) | 2014-01-02 |
EP2680264A1 (en) | 2014-01-01 |
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