JP2013540893A5 - - Google Patents
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- Publication number
- JP2013540893A5 JP2013540893A5 JP2013527130A JP2013527130A JP2013540893A5 JP 2013540893 A5 JP2013540893 A5 JP 2013540893A5 JP 2013527130 A JP2013527130 A JP 2013527130A JP 2013527130 A JP2013527130 A JP 2013527130A JP 2013540893 A5 JP2013540893 A5 JP 2013540893A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- supplied
- substrate
- formula
- structure corresponding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002243 precursor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37769210P | 2010-08-27 | 2010-08-27 | |
| US61/377,692 | 2010-08-27 | ||
| PCT/US2011/049155 WO2012027575A1 (en) | 2010-08-27 | 2011-08-25 | Molybdenum (iv) amide precursors and use thereof in atomic layer deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013540893A JP2013540893A (ja) | 2013-11-07 |
| JP2013540893A5 true JP2013540893A5 (enExample) | 2014-09-11 |
| JP5873494B2 JP5873494B2 (ja) | 2016-03-01 |
Family
ID=44545976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013527130A Expired - Fee Related JP5873494B2 (ja) | 2010-08-27 | 2011-08-25 | モリブデン（ｉｖ）アミド前駆体及び原子層堆積法におけるそれらの使用 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9802220B2 (enExample) |
| EP (1) | EP2609102B1 (enExample) |
| JP (1) | JP5873494B2 (enExample) |
| KR (1) | KR101847953B1 (enExample) |
| CN (1) | CN103097394B (enExample) |
| IL (1) | IL224618A (enExample) |
| SG (1) | SG187920A1 (enExample) |
| TW (1) | TWI549958B (enExample) |
| WO (1) | WO2012027575A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| TWI382987B (zh) | 2007-07-24 | 2013-01-21 | Sigma Aldrich Co | 應用於化學相沉積製程的有機金屬前驅物 |
| WO2009036045A1 (en) | 2007-09-14 | 2009-03-19 | Sigma-Aldrich Co. | Methods of preparing titanium containing thin films by atomic layer deposition using monocyclopentadienyl titanium-based precursors |
| TWI467045B (zh) | 2008-05-23 | 2015-01-01 | Sigma Aldrich Co | 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法 |
| CN102574884B (zh) | 2009-08-07 | 2016-02-10 | 西格玛-奥吉奇有限责任公司 | 高分子量烷基-烯丙基三羰基钴配合物及其用于制备介电薄膜的用途 |
| KR101847953B1 (ko) | 2010-08-27 | 2018-04-11 | 메르크 파텐트 게엠베하 | 몰리브덴(ｉｖ) 아미드 전구체 및 원자층 증착용으로서의 그것의 용도 |
| US8927748B2 (en) | 2011-08-12 | 2015-01-06 | Sigma-Aldrich Co. Llc | Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films |
| WO2013112383A1 (en) | 2012-01-26 | 2013-08-01 | Sigma-Aldrich Co. Llc | Molybdenum allyl complexes and use thereof in thin film deposition |
| WO2014140672A1 (en) * | 2013-03-15 | 2014-09-18 | L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films |
| JP6471371B2 (ja) * | 2014-03-13 | 2019-02-20 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ | モリブデンシルシクロペンタジエニル錯体、シリルアリル錯体、及び、薄膜堆積におけるその使用 |
| KR102147190B1 (ko) * | 2015-03-20 | 2020-08-25 | 에스케이하이닉스 주식회사 | 막형성조성물 및 그를 이용한 박막 제조 방법 |
| CN113652672B (zh) | 2015-05-27 | 2023-12-22 | Asm Ip 控股有限公司 | 用于含钼或钨薄膜的ald的前体的合成和用途 |
| US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
| KR102727616B1 (ko) | 2016-10-07 | 2024-11-07 | 삼성전자주식회사 | 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
| US10358407B2 (en) | 2016-10-12 | 2019-07-23 | Asm Ip Holding B.V. | Synthesis and use of precursors for vapor deposition of tungsten containing thin films |
| KR102474876B1 (ko) * | 2017-06-15 | 2022-12-07 | 삼성전자주식회사 | 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법 |
| US11560625B2 (en) | 2018-01-19 | 2023-01-24 | Entegris, Inc. | Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor |
| US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
| US12516414B2 (en) | 2019-03-19 | 2026-01-06 | Asm Ip Holding B.V. | Reactor manifolds |
| KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
| TWI865725B (zh) | 2020-02-10 | 2024-12-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 高深寬比孔內的氧化鉿之沉積 |
| KR102793252B1 (ko) | 2020-03-25 | 2025-04-08 | 삼성전자주식회사 | 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법 |
| TW202200828A (zh) | 2020-06-24 | 2022-01-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 含鉬薄膜的氣相沉積 |
| KR102901317B1 (ko) * | 2020-08-25 | 2025-12-17 | 주식회사 아이켐스 | 몰리브데넘 함유 박막의 제조방법 및 이에 따라 제조된 몰리브데넘 함유 박막. |
| US11390638B1 (en) | 2021-01-12 | 2022-07-19 | Applied Materials, Inc. | Molybdenum(VI) precursors for deposition of molybdenum films |
| US11584768B2 (en) * | 2021-01-12 | 2023-02-21 | Applied Materials, Inc. | Arene molybdenum (0) precursors for deposition of molybdenum films |
| US11434254B2 (en) | 2021-01-12 | 2022-09-06 | Applied Materials, Inc. | Dinuclear molybdenum precursors for deposition of molybdenum-containing films |
| US11459347B2 (en) | 2021-01-12 | 2022-10-04 | Applied Materials, Inc. | Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films |
| US11760768B2 (en) | 2021-04-21 | 2023-09-19 | Applied Materials, Inc. | Molybdenum(0) precursors for deposition of molybdenum films |
| US20230002888A1 (en) * | 2021-07-01 | 2023-01-05 | Applied Materials, Inc. | Method of depositing metal films |
| KR102812241B1 (ko) * | 2023-06-16 | 2025-05-23 | 에스케이트리켐 주식회사 | 신규한 몰리브데넘 함유 박막 형성용 전구체 및 이를 이용한 몰리브데넘 함유 박막의 형성 방법. |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07107190B2 (ja) | 1984-03-30 | 1995-11-15 | キヤノン株式会社 | 光化学気相成長方法 |
| US5064686A (en) | 1990-10-29 | 1991-11-12 | Olin Corporation | Sub-valent molybdenum, tungsten, and chromium amides as sources for thermal chemical vapor deposition of metal-containing films |
| GB9929279D0 (en) | 1999-12-11 | 2000-02-02 | Epichem Ltd | An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites |
| GB0017968D0 (en) | 2000-07-22 | 2000-09-13 | Epichem Ltd | An improved process and apparatus for the isolation of pure,or substantially pure,organometallic compounds |
| EP1438315B1 (en) | 2001-10-26 | 2006-09-27 | Epichem Limited | Improved precursors for chemical vapour deposition |
| TW200411923A (en) | 2002-07-19 | 2004-07-01 | Asml Us Inc | In-situ formation of metal insulator metal capacitors |
| JP4575362B2 (ja) | 2003-03-17 | 2010-11-04 | シグマ−アルドリッチ・カンパニー | 金属酸化物層または膜を成膜するための前駆体 |
| GB0412790D0 (en) | 2004-06-08 | 2004-07-14 | Epichem Ltd | Precursors for deposition of silicon nitride,silicon oxynitride and metal silicon oxynitrides |
| GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| US7638645B2 (en) | 2006-06-28 | 2009-12-29 | President And Fellows Of Harvard University | Metal (IV) tetra-amidinate compounds and their use in vapor deposition |
| CN101500989B (zh) * | 2006-06-28 | 2012-12-19 | 哈佛学院院长等 | 四脒基金属(iv)化合物及其在气相沉积中的用途 |
| US7956207B2 (en) | 2006-09-28 | 2011-06-07 | Praxair Technology, Inc. | Heteroleptic organometallic compounds |
| TWI382987B (zh) | 2007-07-24 | 2013-01-21 | Sigma Aldrich Co | 應用於化學相沉積製程的有機金屬前驅物 |
| TWI425110B (zh) | 2007-07-24 | 2014-02-01 | 辛格瑪艾瑞契公司 | 以化學相沉積法製造含金屬薄膜之方法 |
| JP2010539710A (ja) | 2007-09-14 | 2010-12-16 | シグマ−アルドリッチ・カンパニー | ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 |
| WO2009036045A1 (en) | 2007-09-14 | 2009-03-19 | Sigma-Aldrich Co. | Methods of preparing titanium containing thin films by atomic layer deposition using monocyclopentadienyl titanium-based precursors |
| TW200944535A (en) | 2008-03-20 | 2009-11-01 | Sigma Aldrich Co | Purification and preparation of phosphorus-containing compounds |
| TW200949939A (en) | 2008-05-23 | 2009-12-01 | Sigma Aldrich Co | High-k dielectric films and methods of producing using titanium-based β -diketonate precursors |
| TW200949006A (en) | 2008-05-23 | 2009-12-01 | Sigma Aldrich Co | High-k dielectric films and methods of producing using titanium-based precursors |
| WO2009143452A1 (en) | 2008-05-23 | 2009-11-26 | Sigma-Aldrich Co. | High-k dielectric films and methods of producing using cerium-based precursors |
| TWI467045B (zh) | 2008-05-23 | 2015-01-01 | Sigma Aldrich Co | 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法 |
| TW200951241A (en) | 2008-05-30 | 2009-12-16 | Sigma Aldrich Co | Methods of forming ruthenium-containing films by atomic layer deposition |
| TW201014924A (en) | 2008-06-20 | 2010-04-16 | Sigma Aldrich Co | Hafnium and zirconium pyrrolyl-based organometallic precursors and use thereof for preparing dielectric thin films |
| WO2010114386A1 (en) * | 2009-03-30 | 2010-10-07 | Universitetet I Oslo | Thin films containing molybdenum oxide |
| CN102482772A (zh) | 2009-07-21 | 2012-05-30 | 西格玛-奥吉奇有限责任公司 | 用于形成含钛薄膜的组合物和使用方法 |
| CN102574884B (zh) | 2009-08-07 | 2016-02-10 | 西格玛-奥吉奇有限责任公司 | 高分子量烷基-烯丙基三羰基钴配合物及其用于制备介电薄膜的用途 |
| US8318572B1 (en) * | 2010-02-19 | 2012-11-27 | Intermolecular, Inc. | Inexpensive electrode materials to facilitate rutile phase titanium oxide |
| US20130052368A1 (en) | 2010-03-19 | 2013-02-28 | Sigma-Aldrich Co. Llc | Methods for preparing thin films by atomic layer deposition using hydrazines |
| KR101847953B1 (ko) | 2010-08-27 | 2018-04-11 | 메르크 파텐트 게엠베하 | 몰리브덴(ｉｖ) 아미드 전구체 및 원자층 증착용으로서의 그것의 용도 |
| US8927748B2 (en) | 2011-08-12 | 2015-01-06 | Sigma-Aldrich Co. Llc | Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films |
| WO2013112383A1 (en) | 2012-01-26 | 2013-08-01 | Sigma-Aldrich Co. Llc | Molybdenum allyl complexes and use thereof in thin film deposition |
-
2011
- 2011-08-25 KR KR1020137006186A patent/KR101847953B1/ko not_active Expired - Fee Related
- 2011-08-25 EP EP11752057.7A patent/EP2609102B1/en not_active Not-in-force
- 2011-08-25 WO PCT/US2011/049155 patent/WO2012027575A1/en not_active Ceased
- 2011-08-25 SG SG2013012679A patent/SG187920A1/en unknown
- 2011-08-25 US US13/817,591 patent/US9802220B2/en not_active Expired - Fee Related
- 2011-08-25 JP JP2013527130A patent/JP5873494B2/ja not_active Expired - Fee Related
- 2011-08-25 CN CN201180041532.4A patent/CN103097394B/zh not_active Expired - Fee Related
- 2011-08-26 TW TW100130779A patent/TWI549958B/zh not_active IP Right Cessation
-
2013
- 2013-02-07 IL IL224618A patent/IL224618A/en active IP Right Grant
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