JP5873494B2 - モリブデン（ｉｖ）アミド前駆体及び原子層堆積法におけるそれらの使用 - Google Patents

モリブデン（ｉｖ）アミド前駆体及び原子層堆積法におけるそれらの使用 Download PDF

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Publication number
JP5873494B2
JP5873494B2 JP2013527130A JP2013527130A JP5873494B2 JP 5873494 B2 JP5873494 B2 JP 5873494B2 JP 2013527130 A JP2013527130 A JP 2013527130A JP 2013527130 A JP2013527130 A JP 2013527130A JP 5873494 B2 JP5873494 B2 JP 5873494B2
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nmeet
precursor
nme
methyl
formula
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JP2013540893A5 (enExample
JP2013540893A (ja
Inventor
ヘイズ，ピーター・ニコラス
オデドラ，ラジェシュ
ヒンドリー，サラ・ルイーズ
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Sigma Aldrich Co LLC
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Sigma Aldrich Co LLC
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2013527130A 2010-08-27 2011-08-25 モリブデン（ｉｖ）アミド前駆体及び原子層堆積法におけるそれらの使用 Expired - Fee Related JP5873494B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37769210P 2010-08-27 2010-08-27
US61/377,692 2010-08-27
PCT/US2011/049155 WO2012027575A1 (en) 2010-08-27 2011-08-25 Molybdenum (iv) amide precursors and use thereof in atomic layer deposition

Publications (3)

Publication Number Publication Date
JP2013540893A JP2013540893A (ja) 2013-11-07
JP2013540893A5 JP2013540893A5 (enExample) 2014-09-11
JP5873494B2 true JP5873494B2 (ja) 2016-03-01

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JP2013527130A Expired - Fee Related JP5873494B2 (ja) 2010-08-27 2011-08-25 モリブデン（ｉｖ）アミド前駆体及び原子層堆積法におけるそれらの使用

Country Status (9)

Country Link
US (1) US9802220B2 (enExample)
EP (1) EP2609102B1 (enExample)
JP (1) JP5873494B2 (enExample)
KR (1) KR101847953B1 (enExample)
CN (1) CN103097394B (enExample)
IL (1) IL224618A (enExample)
SG (1) SG187920A1 (enExample)
TW (1) TWI549958B (enExample)
WO (1) WO2012027575A1 (enExample)

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EP3150614B1 (en) 2009-08-07 2017-11-29 Sigma-Aldrich Co. LLC High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
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US8927748B2 (en) 2011-08-12 2015-01-06 Sigma-Aldrich Co. Llc Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films
SG11201404375PA (en) 2012-01-26 2014-10-30 Sigma Aldrich Co Llc Molybdenum allyl complexes and use thereof in thin film deposition
WO2014140672A1 (en) * 2013-03-15 2014-09-18 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films
JP6471371B2 (ja) * 2014-03-13 2019-02-20 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ モリブデンシルシクロペンタジエニル錯体、シリルアリル錯体、及び、薄膜堆積におけるその使用
KR102147190B1 (ko) * 2015-03-20 2020-08-25 에스케이하이닉스 주식회사 막형성조성물 및 그를 이용한 박막 제조 방법
KR102344660B1 (ko) * 2015-05-27 2021-12-29 에이에스엠 아이피 홀딩 비.브이. 몰리브덴 또는 텅스텐 함유 박막의 ald용 전구체의 합성 및 사용
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KR102474876B1 (ko) * 2017-06-15 2022-12-07 삼성전자주식회사 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법
US11560625B2 (en) * 2018-01-19 2023-01-24 Entegris, Inc. Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
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TWI865725B (zh) 2020-02-10 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 高深寬比孔內的氧化鉿之沉積
KR102793252B1 (ko) 2020-03-25 2025-04-08 삼성전자주식회사 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법
TW202200828A (zh) 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 含鉬薄膜的氣相沉積
US11584768B2 (en) * 2021-01-12 2023-02-21 Applied Materials, Inc. Arene molybdenum (0) precursors for deposition of molybdenum films
US11459347B2 (en) 2021-01-12 2022-10-04 Applied Materials, Inc. Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films
US11390638B1 (en) 2021-01-12 2022-07-19 Applied Materials, Inc. Molybdenum(VI) precursors for deposition of molybdenum films
US11434254B2 (en) 2021-01-12 2022-09-06 Applied Materials, Inc. Dinuclear molybdenum precursors for deposition of molybdenum-containing films
US11760768B2 (en) 2021-04-21 2023-09-19 Applied Materials, Inc. Molybdenum(0) precursors for deposition of molybdenum films
US20230002888A1 (en) * 2021-07-01 2023-01-05 Applied Materials, Inc. Method of depositing metal films
KR102812241B1 (ko) * 2023-06-16 2025-05-23 에스케이트리켐 주식회사 신규한 몰리브데넘 함유 박막 형성용 전구체 및 이를 이용한 몰리브데넘 함유 박막의 형성 방법.

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Also Published As

Publication number Publication date
KR20130139866A (ko) 2013-12-23
CN103097394A (zh) 2013-05-08
TW201219405A (en) 2012-05-16
TWI549958B (zh) 2016-09-21
EP2609102A1 (en) 2013-07-03
CN103097394B (zh) 2016-03-02
WO2012027575A1 (en) 2012-03-01
SG187920A1 (en) 2013-03-28
IL224618A (en) 2015-02-26
KR101847953B1 (ko) 2018-04-11
JP2013540893A (ja) 2013-11-07
US20130196065A1 (en) 2013-08-01
US9802220B2 (en) 2017-10-31
EP2609102B1 (en) 2014-12-31

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