JP2013539301A5 - - Google Patents

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Publication number
JP2013539301A5
JP2013539301A5 JP2013530313A JP2013530313A JP2013539301A5 JP 2013539301 A5 JP2013539301 A5 JP 2013539301A5 JP 2013530313 A JP2013530313 A JP 2013530313A JP 2013530313 A JP2013530313 A JP 2013530313A JP 2013539301 A5 JP2013539301 A5 JP 2013539301A5
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JP
Japan
Prior art keywords
metallization layer
conductive vias
transmission line
portions
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2013530313A
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English (en)
Japanese (ja)
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JP2013539301A (ja
JP5854440B2 (ja
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Publication date
Priority claimed from US12/888,208 external-priority patent/US8476687B2/en
Application filed filed Critical
Publication of JP2013539301A publication Critical patent/JP2013539301A/ja
Publication of JP2013539301A5 publication Critical patent/JP2013539301A5/ja
Application granted granted Critical
Publication of JP5854440B2 publication Critical patent/JP5854440B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013530313A 2010-09-22 2011-09-22 低インピーダンス送信ライン Active JP5854440B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/888,208 2010-09-22
US12/888,208 US8476687B2 (en) 2010-09-22 2010-09-22 Low impedance transmisson line
PCT/US2011/052767 WO2012040468A2 (en) 2010-09-22 2011-09-22 Low impedance transmission line

Publications (3)

Publication Number Publication Date
JP2013539301A JP2013539301A (ja) 2013-10-17
JP2013539301A5 true JP2013539301A5 (https=) 2014-10-16
JP5854440B2 JP5854440B2 (ja) 2016-02-09

Family

ID=45816957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013530313A Active JP5854440B2 (ja) 2010-09-22 2011-09-22 低インピーダンス送信ライン

Country Status (4)

Country Link
US (1) US8476687B2 (https=)
JP (1) JP5854440B2 (https=)
CN (1) CN103098210B (https=)
WO (1) WO2012040468A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9166270B2 (en) 2012-11-21 2015-10-20 Texas Instruments Incorporated Balun with integrated decoupling as ground shield
CN103337682B (zh) * 2013-07-24 2015-03-25 东南大学 一种宽带、低损耗、高平衡度的片上巴伦
SG10201803274QA (en) * 2013-10-30 2018-06-28 Nestec Sa Machine and system for preparing a cooled food product with aerated or whipped texture in controlled manner
CN105938931A (zh) * 2016-02-29 2016-09-14 中国电力科学研究院 一种平衡不平衡转换器及其设计方法
CN105789803A (zh) * 2016-02-29 2016-07-20 中国电力科学研究院 一种平衡不平衡转换器及其设计方法
US10692967B1 (en) * 2018-12-04 2020-06-23 Analog Devices, Inc. High density self-routing metal-oxide-metal capacitor
CN115528024A (zh) * 2021-06-25 2022-12-27 瑞昱半导体股份有限公司 紧凑的电容结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281769A (en) 1990-11-05 1994-01-25 Nippon Telegraph And Telephone Corporation Dewall plating technique
JP2001111408A (ja) 1999-10-08 2001-04-20 Hitachi Ltd 高速信号伝送配線実装構造
US6714113B1 (en) * 2000-11-14 2004-03-30 International Business Machines Corporation Inductor for integrated circuits
JP2005027005A (ja) 2003-07-02 2005-01-27 Matsushita Electric Ind Co Ltd 高周波信号発生装置
US7414275B2 (en) * 2005-06-24 2008-08-19 International Business Machines Corporation Multi-level interconnections for an integrated circuit chip
EP1929285B1 (en) * 2005-09-30 2017-02-22 Silicon Laboratories Inc. An integrated electronic sensor and method for its production
JP4799992B2 (ja) 2005-10-18 2011-10-26 学校法人明星学苑 半導体装置及び半導体装置の特性調整方法
JP2007115357A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd データ記録装置及びデータ記録方法
JP5103232B2 (ja) * 2008-03-18 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置

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