Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D1/00—Resistors, capacitors or inductors
  • H10D1/60—Capacitors
  • H10D1/62—Capacitors having potential barriers
  • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D1/00—Resistors, capacitors or inductors
  • H10D1/01—Manufacture or treatment
  • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
  • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
  • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
  • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
  • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
  • H10W20/496—Capacitor integral with wiring layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
  • H10W20/497—Inductive arrangements or effects of, or between, wiring layers

Definitions

• the metal capacitor further comprises a metallization layer having first, second, and third portions that are interdigitated.
• each transmission line unit is about 4 ⁇ in width, and wherein each transmission line units that is located away from the center tap are about 9.5 ⁇ or greater in height, and wherein each transmission line units that is located near the center tap are greater than about less than about 9.5 ⁇ in height.
• the transmission line unit nearest to the center tap further comprises a diode formed on the substrate.
• FIG. 5 is a cross-sectional view of the portion of the MOS capacitor of FIG. 4 along section line C-C;
• each region can generally employ a number of source/drain regions 210 formed in the substrate 114. For example, there can be five source/drain regions that extend across each region.
• gate insulators 208 which can be comprised of silicon dioxide
• gate electrodes 203 which can be formed of polysilicon
• the source/drain regions 210 are then coupled to portion 306 of metallization layer 302 with conductive vias 205, which are formed in dielectric 212 (i.e., silicon dioxide) and filled with a plug 206 (i.e., tungsten).

Landscapes

• Semiconductor Integrated Circuits (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Microwave Amplifiers (AREA)

Priority Applications (2)

Applications Claiming Priority (2)

Publications (2)

Family

ID=45816957

Family Applications (1)

Country Status (4)

Families Citing this family (7)

Family Cites Families (9)

• 2010
  • 2010-09-22 US US12/888,208 patent/US8476687B2/en active Active
• 2011
  • 2011-09-22 CN CN201180040984.0A patent/CN103098210B/zh active Active
  • 2011-09-22 JP JP2013530313A patent/JP5854440B2/ja active Active
  • 2011-09-22 WO PCT/US2011/052767 patent/WO2012040468A2/en not_active Ceased

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