CN103098210B - 低阻抗传输线 - Google Patents

低阻抗传输线 Download PDF

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Publication number
CN103098210B
CN103098210B CN201180040984.0A CN201180040984A CN103098210B CN 103098210 B CN103098210 B CN 103098210B CN 201180040984 A CN201180040984 A CN 201180040984A CN 103098210 B CN103098210 B CN 103098210B
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CN
China
Prior art keywords
metal layer
conductive
group
hole
transmission line
Prior art date
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Application number
CN201180040984.0A
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English (en)
Chinese (zh)
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CN103098210A (zh
Inventor
布赖恩·P·金斯伯格
维贾伊·B·伦塔拉
斯里纳特·M·拉马斯瓦米
巴赫尔·S·哈龙
硕恩永
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Texas Instruments Inc
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Texas Instruments Inc
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Publication date
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Publication of CN103098210A publication Critical patent/CN103098210A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Microwave Amplifiers (AREA)
CN201180040984.0A 2010-09-22 2011-09-22 低阻抗传输线 Active CN103098210B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/888,208 2010-09-22
US12/888,208 US8476687B2 (en) 2010-09-22 2010-09-22 Low impedance transmisson line
PCT/US2011/052767 WO2012040468A2 (en) 2010-09-22 2011-09-22 Low impedance transmission line

Publications (2)

Publication Number Publication Date
CN103098210A CN103098210A (zh) 2013-05-08
CN103098210B true CN103098210B (zh) 2015-11-25

Family

ID=45816957

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180040984.0A Active CN103098210B (zh) 2010-09-22 2011-09-22 低阻抗传输线

Country Status (4)

Country Link
US (1) US8476687B2 (https=)
JP (1) JP5854440B2 (https=)
CN (1) CN103098210B (https=)
WO (1) WO2012040468A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9166270B2 (en) 2012-11-21 2015-10-20 Texas Instruments Incorporated Balun with integrated decoupling as ground shield
CN103337682B (zh) * 2013-07-24 2015-03-25 东南大学 一种宽带、低损耗、高平衡度的片上巴伦
SG10201803274QA (en) * 2013-10-30 2018-06-28 Nestec Sa Machine and system for preparing a cooled food product with aerated or whipped texture in controlled manner
CN105938931A (zh) * 2016-02-29 2016-09-14 中国电力科学研究院 一种平衡不平衡转换器及其设计方法
CN105789803A (zh) * 2016-02-29 2016-07-20 中国电力科学研究院 一种平衡不平衡转换器及其设计方法
US10692967B1 (en) * 2018-12-04 2020-06-23 Analog Devices, Inc. High density self-routing metal-oxide-metal capacitor
CN115528024A (zh) * 2021-06-25 2022-12-27 瑞昱半导体股份有限公司 紧凑的电容结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639686A (en) * 1990-11-05 1997-06-17 Nippon Telegraph And Telephone Corporation Method of fabricating circuit elements on an insulating substrate
CN1353459A (zh) * 2000-11-14 2002-06-12 国际商业机器公司 用于集成电路的电感器
JP2007115357A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd データ記録装置及びデータ記録方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111408A (ja) 1999-10-08 2001-04-20 Hitachi Ltd 高速信号伝送配線実装構造
JP2005027005A (ja) 2003-07-02 2005-01-27 Matsushita Electric Ind Co Ltd 高周波信号発生装置
US7414275B2 (en) * 2005-06-24 2008-08-19 International Business Machines Corporation Multi-level interconnections for an integrated circuit chip
EP1929285B1 (en) * 2005-09-30 2017-02-22 Silicon Laboratories Inc. An integrated electronic sensor and method for its production
JP4799992B2 (ja) 2005-10-18 2011-10-26 学校法人明星学苑 半導体装置及び半導体装置の特性調整方法
JP5103232B2 (ja) * 2008-03-18 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639686A (en) * 1990-11-05 1997-06-17 Nippon Telegraph And Telephone Corporation Method of fabricating circuit elements on an insulating substrate
CN1353459A (zh) * 2000-11-14 2002-06-12 国际商业机器公司 用于集成电路的电感器
JP2007115357A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd データ記録装置及びデータ記録方法

Also Published As

Publication number Publication date
US20120068238A1 (en) 2012-03-22
JP2013539301A (ja) 2013-10-17
CN103098210A (zh) 2013-05-08
JP5854440B2 (ja) 2016-02-09
US8476687B2 (en) 2013-07-02
WO2012040468A2 (en) 2012-03-29
WO2012040468A3 (en) 2012-08-16

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