JP2013535389A - 多結晶窒化アルミニウム材料およびその製造方法 - Google Patents
多結晶窒化アルミニウム材料およびその製造方法 Download PDFInfo
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Abstract
【選択図】なし
Description
a)加熱速度が約5℃/分、約4℃/分、約3℃/分、約2℃/分、約1℃/分、約0.8℃/分、または約0.6℃/分、浸漬温度が約1500℃、約1550℃、約1600℃、約1650℃、約1700℃、約1750℃、約1800℃、約1850℃、または約1900℃、第一の浸漬時間が少なくとも約1分、少なくとも約2分、少なくとも約5分、少なくとも約10分、少なくとも約30分、または少なくとも約1時間、最大温度までの加熱速度が約2℃/分、約1℃/分、約0.8℃/分、約0.6℃/分、約0.4℃/分、約0.2℃/分、または約0.1℃/分、第一の浸漬温度よりも大きく、最大温度での浸漬時間が少なくとも約2時間、少なくとも約3時間、少なくとも約4時間、少なくとも約5時間、少なくとも約6時間、少なくとも約7時間、少なくとも約8時間、または少なくとも約9時間。
b)上記からアルゴリズムa)を適用し、第一の温度で浸漬を完成した後、最大温度で加熱する前に、アルゴリズムが含む加熱速度が約4℃、約3℃、約2℃、約1℃、約0.8℃、約0.6℃、または約0.4℃、第二の浸漬温度が約1700℃、約1750℃、約1800℃、約1850℃、約1900℃、約1950℃、約2000℃、約2050℃、または約2100℃、第二の温度で浸漬する時間が、少なくとも約1分、少なくとも約2分、少なくとも約5分、少なくとも約10分、少なくとも約30分、または少なくとも約1時間であり、最大温度は第二の浸漬温度よりも高い、
c)上記からアルゴリズムb)を適用し、第二の温度で浸漬を完了した後、最大温度に加熱する前に、アルゴリズムが含む加熱速度が、約3℃/分、約2℃/分、約1℃/分、約0.8℃/分、約0.6℃/分、約0.5℃/分、または約0.2℃/分、第三の浸漬温度が、約1900℃、約1950℃、約2000℃、約2050℃、約2100℃、約2150℃、約2200℃、約2250℃、または約2300℃、第二の温度での浸漬時間が、少なくとも約1分、少なくとも約2分、少なくとも約5分、少なくとも約10分、少なくとも約30分、または少なくとも約1時間であり、最大温度は第三の浸漬温度よりも高い。
35mm径の厚さ2mmの多結晶窒化アルミニウムウェハーの形成
200ミリメートル径の750μmの厚さを有する多結晶窒化アルミニウムウェハーの形成
Claims (51)
- 所定の特性を有する多結晶窒化アルミニウム材料を調製する方法であって、
加圧窒化アルミニウムスラグを形成するために、窒化アルミニウム粉を加圧する工程と、
窒化アルミニウム焼結ブールを形成するために、非酸素環境下で少なくとも約1500℃の最高温度まで加熱することにより、加圧窒化アルミニウムスラグを焼結する工程と、を有し、
焼結窒化アルミニウムブールは少なくとも約98%の相対密度および少なくとも約98重量%の純度の窒化アルミニウムを含む方法。 - 多結晶窒化アルミニウム基板を形成するために、焼結された窒化アルミニウムブールの少なくとも一部を機械的に研磨する工程をさらに含む、請求項1に記載の方法。
- 多結晶窒化アルミニウム基板は、約80nm未満のrms表面粗さおよび1000cm−2未満の欠陥密度を有する請求項2の方法。
- 前記研磨の工程の前に、多結晶窒化アルミニウムを形成するために、焼結窒化アルミニウムブールを前記研磨工程へ移行する、窒化アルミニウムブールを、所定の厚さの1つ以上のウェハーにスライスすることを含むウェハー形成工程をさらに含む、請求項3に記載の方法。
- 前記機械的研磨工程は、前記切断工程の直後の薄さ未満の厚みで、1つ以上のウェハーを研削することを含む、請求項4に記載の方法。
- 前記多結晶窒化アルミニウム基板が約50nm未満のrms表面粗さを有する、請求項3に記載の方法。
- 前記多結晶窒化アルミニウム基板が約20nm未満のrms表面粗さを有する、請求項3に記載の方法。
- 前記多結晶窒化アルミニウム基板が約500cm−2未満の欠陥密度を有する、請求項3に記載の方法。
- 前記多結晶窒化アルミニウム基板が約200cm−2未満の欠陥密度を有する、請求項3に記載の方法。
- 前記欠陥は、少なくとも約1.0μmの深さを有し少なくとも約1.0μmの幅を有する表面窪みである、請求項3に記載の方法。
- 前記窒化アルミニウム粉末が、粉末粒子の少なくとも約50%が、約10μm未満のサイズを有するような粒径範囲を有する、請求項1に記載の方法。
- 前記窒化アルミニウム粉末が、少なくとも約1.0m2/gの粒子表面積を有する、請求項1に記載の方法。
- 前記窒化アルミニウム粉末が、約1.0m2/g〜約10.0m2/gの粒子表面積を有する、請求項1に記載の方法。
- 前記加圧が少なくとも約20000PSI(約138MPa)の圧力を適用することにより実施される、請求項1に記載の方法。
- 前記加圧が約20000PSI(約138MPa)〜約40000PSI(MPa)の圧力を適用することにより実施される、請求項1に記載の方法。
- 前記加圧が、所定の最大圧力を達成するために、約5000PSI/分(約57.5KPa/s)の速度で圧力を増加させることにより実施される、請求項1に記載の方法。
- 前記加圧が、約1分〜約2時間の時間で、さらに最大圧から大気圧に減圧することを含む、請求項16に記載の方法。
- 前記加圧が、外部から加えられる熱の非存在下で行われる、請求項1に記載の方法。
- 前記焼結工程が、外気を排気したチャンバ内で実施される、請求項1に記載の方法。
- 前記焼結工程が窒素雰囲気下で実施される請求項19に記載の方法。
- 前記窒素雰囲気が最大約5気圧の圧力で提供される、請求項20に記載の方法。
- 窒素が約10SCCM〜約3000SCCMの速度で提供される、請求項20に記載の方法。
- 前記焼結工程が、最大到達温度が約1500℃〜約2500℃となるように実施される、請求項1に記載の方法。
- 前記加圧窒化アルミニウムスラグが最高焼結温度に一定速度で加熱される、請求項1に記載の方法。
- 前記加圧窒化アルミニウムスラグは2つ以上の異なる加熱速度が連続的な温度上昇を達成するために使用される予め規定された加熱アルゴリズムによって加熱される、請求項1に記載の方法。
- 前記加熱アルゴリズムが、前記窒化アルミニウムスラグの連続的な低速加熱を与える、請求項25に記載の方法。
- 前記加熱アルゴリズムが、前記加圧窒化アルミニウムスラグの連続的な高速加熱を与える、請求項25に記載の方法。
- 前記加熱アルゴリズムが低速加熱と加圧窒化アルミニウムスラグの高速加熱とを交互に提供する、請求項25に記載の方法。
- 前記加熱アルゴリズムが用意された前記ブールのサイズに反比例する加熱速度を適用する、請求項25に記載の方法。
- 前記2つ以上の異なる加熱速度が約0.1℃/分〜約20℃/分の範囲に全て含まれる、請求項25に記載の方法。
- 前記加圧窒化アルミニウムスラグは、最大焼結温度よりも低い少なくとも第一の温度が達成され、かつ前記スラグは最大焼結温度に加熱される前少なくとも約1分間、第一の温度で浸漬される、請求項1に記載の方法。
- 前記加圧窒化アルミニウムスラグは、最大焼結温度よりも低い第一の温度に加熱され、第一の温度で少なくとも約1分間浸漬され、第二の温度で少なくとも約1分間浸漬され、かつ最大焼結温度で加熱される、請求項31に記載の方法。
- 前記加圧窒化アルミニウムスラグは少なくとも約2時間の時間最大温度で浸漬される、請求項1に記載の方法。
- 前記窒化アルミニウム焼結ブールは約0.1℃/分〜約20℃/分の速度で周囲温度に冷却される、請求項1に記載の方法。
- 前記多結晶窒化アルミニウムブールは、少なくとも約99%の相対密度および少なくとも約99重量%の純度の窒化アルミニウムを含む、請求項1に記載の方法。
- 前記加圧と前記焼結がその焼結助剤も結合剤も含まないで実施される、請求項1に記載の方法。
- 加圧窒化アルミニウムスラグを形成するための窒化アルミニウム粉末を加圧する工程と、
焼結窒化アルミニウムブールを形成するために非酸素環境下で少なくとも約1500℃の最大温度で加熱することにより前記加圧窒化アルミニウムスラグ材料を焼結する工程と、
多結晶窒化アルミニウム基板を形成するために焼結された窒化アルミニウムブールの少なくとも一部を機械的に研磨する工程と、を有し、
焼結された多結晶窒化アルミニウム基板は少なくとも約98%の相対密度、少なくとも約98重量%の窒化アルミニウム純度、約80nm未満のrms表面粗さ、および約1000cm−2未満の欠陥密度を有することを含む、請求項1に記載の方法。 - 請求項37の方法に従って調整され、すなわち、少なくとも約98%、少なくとも約98重量%の窒化アルミニウムの純度、約80nm未満のrms表面粗さ、および約1000cm−2未満の欠陥密度を有する多結晶立花アルミニウム基板。
- 請求項38に記載の多結晶窒化アルミニウム基板を含む製品。
- ヒートシンク、電気絶縁部品、ハンドルウェハー、キャリアウェハーおよび層転写基板から成る群から選択される、請求項39に記載の製品。
- 前記製品が、電子デバイス、マイクロ電子デバイス、光電子デバイス、および通信機器から成る群から選択される、請求項39に記載の製品。
- 少なくとも約98%の相対密度および少なくとも約98重量%の窒化アルミニウム純度を有する多結晶窒化アルミニウムブール。
- 前記ブールは少なくとも約1.0cmの厚さと、少なくともあるより規定された次元を有する、請求項42に記載の多結晶窒化アルミニウムブール。
- 前記ブールは少なくとも約5.0cmの厚さを有する、請求項43に記載の多結晶窒化アルミニウムブール。
- 所定の直径が少なくとも約2cmの直径である、請求項43に記載の多結晶窒化アルミニウムブール。
- 前記ブールは少なくとも5.0cmの厚さと少なくとも5.0cmの直径とを有する、請求項45に記載の多結晶窒化アルミニウムブール。
- 前記ブールは実質的に焼結助剤も結合剤も含まない、請求項43に記載の多結晶窒化アルミニウムブール。
- 請求項43に記載の多結晶窒化アルミニウムブールを少なくとも一部含む多結晶窒化アルミニウム基板であって、前記多結晶窒化アルミニウム基板は、少なくとも約98%の相対密度、少なくとも約98重量%の窒化アルミニウム純度、約80nm未満のrms表面粗さ、および約1000cm−2未満の欠陥密度を有する多結晶窒化アルミニウム基板。
- 請求項48に記載の多結晶窒化アルミニウム基板を含む製品。
- 前記製品はヒートシンク、電気絶縁部品、ハンドルウェハー、キャリアウェハーおよび層転写基板から成る群から選択される、請求項49に記載の製品。
- 前記製品は、電子デバイス、マイクロ電子デバイス、光電子デバイス、および通信機器から成る群から選択される、請求項49に記載の製品。
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