JP2013529394A - 放射放出半導体ボディ、放射放出半導体ボディの製造方法、および放射放出半導体部品 - Google Patents
放射放出半導体ボディ、放射放出半導体ボディの製造方法、および放射放出半導体部品 Download PDFInfo
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- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
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Abstract
【選択図】 図2
Description
− 電磁放射を生成するのに適している活性ゾーンを有するエピタキシャル半導体積層体と、
− エピタキシャル半導体積層体を機械的に安定させることを目的とするキャリア層と、
− 半導体ボディとの電気的接触を形成するコンタクト構造であって、それぞれがボリューム領域(volume region)および面接合領域を有する、コンタクト構造と、
を備えている。さらに、面接合領域は、ボリューム領域の材料とは異なる材料から形成されている。
− 電磁放射を生成するのに適している活性ゾーンを有するエピタキシャル半導体積層体を形成するステップと、
− エピタキシャル半導体積層体の主面の上にキャリア層を形成するステップであって、キャリア層がエピタキシャル半導体積層体を機械的に安定させることを目的とする、ステップと、
− 接合可能層(bondable layer)を形成するステップと、
− キャリア層の上にフォトリソグラフィによってコンタクト構造を形成するステップであって、コンタクト構造それぞれがボリューム領域および面接合領域を有する、ステップと、
を含んでいる。
Claims (15)
- 放射放出半導体ボディ(14)であって、
− 電磁放射を生成するのに適している活性ゾーン(4)を有するエピタキシャル半導体積層体(3)と、
− 前記エピタキシャル半導体積層体(3)を機械的に安定させることを目的とするキャリア層(1)と、
− 前記放射放出半導体ボディ(14)との電気的接触を形成するコンタクト構造(9,91)であって、それぞれがボリューム領域(12)および面接合領域(13)を有し、前記面接合領域(13)が、前記ボリューム領域(12)の材料とは異なる材料から形成されている、前記コンタクト構造(9,91)と、
を備えている、放射放出半導体ボディ(14)。 - 前記ボリューム領域(12)が、前記キャリア層(1)と同じ材料から形成されている、
請求項1に記載の放射放出半導体ボディ(14)。 - 前記キャリア層(1)が、次の群、すなわち、ニッケル、モリブデン、銅、から好ましくは選択される金属材料を含んでいる、
請求項1または請求項2に記載の放射放出半導体ボディ(14)。 - 前記面接合領域(13)が、次の材料、すなわち、金、銅、アルミニウム、のうちの少なくとも1種類を含んでいる、
請求項1から請求項3のいずれかに記載の放射放出半導体ボディ(14)。 - 前記コンタクト構造(9)が突起部によって形成されており、前記突起部それぞれが、20μm〜200μmの範囲内(両端値を含む)の幅、もしくは、5μm〜50μmの範囲内(両端値を含む)の高さ、またはその両方を有する、
請求項1から請求項4のいずれかに記載の放射放出半導体ボディ(14)。 - 前記コンタクト構造(9)が突起部によって形成されており、前記面接合領域(13)それぞれが両側において前記ボリューム領域(12)よりも突き出している、
請求項1から請求項5のいずれかに記載の放射放出半導体ボディ(14)。 - 前記面接合領域(13)が、超音波摩擦圧接可能もしくは熱圧着可能またはその両方であるように形成されている、
請求項1から請求項6のいずれかに記載の放射放出半導体ボディ(14)。 - 放射放出半導体ボディ(14)の製造方法であって、
− 電磁放射を生成するのに適している活性ゾーン(4)を有するエピタキシャル半導体積層体(3)を形成するステップと、
− 前記エピタキシャル半導体積層体(3)の主面の上にキャリア層(1)を形成するステップであって、前記キャリア層(1)が前記エピタキシャル半導体積層体(3)を機械的に安定させることを目的とする、前記ステップと、
− 接合可能層(11)を形成するステップと、
− 前記キャリア層(1)の上にフォトリソグラフィによってコンタクト構造(9)を形成するステップであって、前記コンタクト構造(9)それぞれがボリューム領域(12)および面接合領域(13)を有する、前記ステップと、
を含んでいる、方法。 - 前記キャリア層(1)と前記接合可能層(11)との間に、前記キャリア層(1)と同じ材料のさらなる層(10)が形成され、前記キャリア層(1)の材料が好ましくは金属であるように形成される、
請求項8に記載の方法。 - 前記コンタクト構造(9)の前記ボリューム領域(12)が前記さらなる層(10)の材料から形成される、
請求項9に記載の方法。 - 前記コンタクト構造(9)の前記ボリューム領域(12)が前記キャリア層(1)の材料から形成される、
請求項8に記載の方法。 - 前記接合可能層(11)が前記キャリア層(1)の上に直接接触した状態に形成される、
請求項11に記載の方法。 - 前記面接合領域(13)もしくは前記接合可能層(11)またはその両方が、超音波摩擦圧接可能もしくは熱圧着可能またはその両方であるように形成される、
請求項8から請求項12のいずれかに記載の方法。 - チップキャリア(16)の上に貼り付けられた、請求項1から請求項7のいずれかに記載の放射放出半導体ボディ(14)を有する、放射放出半導体部品。
- 前記放射放出半導体ボディ(14)が超音波摩擦圧接または熱圧着によって前記チップキャリア(16)の上に貼り付けられている、
請求項14に記載の放射放出半導体部品。
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DE102010023343A DE102010023343A1 (de) | 2010-06-10 | 2010-06-10 | Strahlungsemittierender Halbleiterkörper, Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterkörpers und strahlungsemittierendes Halbleiterbauelement |
PCT/EP2011/059485 WO2011154441A1 (de) | 2010-06-10 | 2011-06-08 | Strahlungsemittierender halbleiterkörper, verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers und strahlungsemittierendes halbleiterbauelement |
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DE102013212928A1 (de) * | 2013-07-03 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
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CN102934244B (zh) | 2015-11-25 |
EP3349260B1 (de) | 2019-09-18 |
WO2011154441A1 (de) | 2011-12-15 |
KR20130058720A (ko) | 2013-06-04 |
EP2580792B1 (de) | 2018-05-16 |
DE102010023343A1 (de) | 2011-12-15 |
US20130134473A1 (en) | 2013-05-30 |
TW201214773A (en) | 2012-04-01 |
EP2580792A1 (de) | 2013-04-17 |
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