JP2013524549A5 - - Google Patents

Download PDF

Info

Publication number
JP2013524549A5
JP2013524549A5 JP2013504927A JP2013504927A JP2013524549A5 JP 2013524549 A5 JP2013524549 A5 JP 2013524549A5 JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013524549 A5 JP2013524549 A5 JP 2013524549A5
Authority
JP
Japan
Prior art keywords
sublayer
solar cell
passivation
interface
bulk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013504927A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013524549A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2011/030782 external-priority patent/WO2011130017A2/en
Publication of JP2013524549A publication Critical patent/JP2013524549A/ja
Publication of JP2013524549A5 publication Critical patent/JP2013524549A5/ja
Pending legal-status Critical Current

Links

JP2013504927A 2010-04-13 2011-03-31 結晶性太陽電池上の機能的および光学的グレーデッドARC層のための多層SiN Pending JP2013524549A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32375510P 2010-04-13 2010-04-13
US61/323,755 2010-04-13
PCT/US2011/030782 WO2011130017A2 (en) 2010-04-13 2011-03-31 Multi-layer sin for functional and optical graded arc layers on crystalline solar cells

Publications (2)

Publication Number Publication Date
JP2013524549A JP2013524549A (ja) 2013-06-17
JP2013524549A5 true JP2013524549A5 (https=) 2014-05-15

Family

ID=44799245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013504927A Pending JP2013524549A (ja) 2010-04-13 2011-03-31 結晶性太陽電池上の機能的および光学的グレーデッドARC層のための多層SiN

Country Status (5)

Country Link
US (1) US20110272024A1 (https=)
JP (1) JP2013524549A (https=)
CN (1) CN102870236A (https=)
DE (1) DE112011101329T5 (https=)
WO (1) WO2011130017A2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010009297A2 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
CN102318078B (zh) 2008-12-10 2013-10-30 应用材料公司 用于网版印刷图案对准的增强型检视系统
KR101477470B1 (ko) * 2012-03-28 2014-12-29 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법
US9280151B2 (en) * 2012-05-15 2016-03-08 Wafertech, Llc Recipe management system and method
IN2015DN01821A (https=) * 2012-08-09 2015-05-29 Shinetsu Chemical Co
US8610230B1 (en) * 2012-11-01 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. HfO2/SiO2-Si interface improvement for CMOS image sensor
US20140174532A1 (en) * 2012-12-21 2014-06-26 Michael P. Stewart Optimized anti-reflection coating layer for crystalline silicon solar cells
CN105518876A (zh) * 2013-07-05 2016-04-20 Gtat公司 用于光伏电池的聚硅氮烷涂层
CN103746005B (zh) * 2014-01-17 2016-08-17 宁波富星太阳能有限公司 双层氮化硅减反射膜
JP6194850B2 (ja) * 2014-05-21 2017-09-13 株式会社島津製作所 薄膜形成装置
CN104091839B (zh) * 2014-07-21 2016-09-07 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜的制造方法
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
CN107958862B (zh) * 2016-10-18 2021-11-09 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
CN110178201B (zh) * 2017-01-13 2023-06-16 应用材料公司 用于低温氮化硅膜的方法及设备
KR102578078B1 (ko) * 2017-04-27 2023-09-12 어플라이드 머티어리얼스, 인코포레이티드 3d 낸드 적용을 위한 낮은 유전율의 산화물 및 낮은 저항의 op 스택
CN107275190B (zh) * 2017-06-30 2021-01-01 韩华新能源(启东)有限公司 一种在半导体衬底上制备双层氮化硅薄膜的方法
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
JP6539010B1 (ja) * 2017-11-30 2019-07-03 京セラ株式会社 太陽電池素子
DE102018121897A1 (de) * 2018-09-07 2020-03-12 Infineon Technologies Ag Halbleitervorrichtung mit einem silizium und stickstoff enthaltenden bereich und herstellungsverfahren
US12180607B2 (en) 2019-05-24 2024-12-31 Lam Research Corporation Electrochemical deposition system including optical probes
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US11075308B1 (en) 2020-06-19 2021-07-27 Pharos Materials, Inc. Vanadium-containing electrodes and interconnects to transparent conductors
CN112760614B (zh) * 2020-12-09 2023-02-28 晋能清洁能源科技股份公司 一种多晶pecvd镀膜均匀性优化的方法
CN115838915B (zh) * 2022-11-24 2025-07-08 普乐新能源科技(泰兴)有限公司 一种单晶硅电池pecvd镀膜工艺
CN118039745B (zh) * 2024-04-11 2025-04-08 福建金石能源有限公司 一种背接触电池的制作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
US4751191A (en) * 1987-07-08 1988-06-14 Mobil Solar Energy Corporation Method of fabricating solar cells with silicon nitride coating
JPH06232437A (ja) * 1992-12-07 1994-08-19 Fuji Electric Co Ltd 可撓性薄膜光電変換素子
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
JP2002270879A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置
KR100852700B1 (ko) * 2002-04-03 2008-08-19 삼성에스디아이 주식회사 고효율 태양전지 및 그 제조 방법
JP4186725B2 (ja) * 2003-06-24 2008-11-26 トヨタ自動車株式会社 光電変換素子
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
JP4540447B2 (ja) * 2004-10-27 2010-09-08 シャープ株式会社 太陽電池および太陽電池の製造方法
KR100900443B1 (ko) * 2006-11-20 2009-06-01 엘지전자 주식회사 태양전지 및 그의 제조방법
KR100974220B1 (ko) * 2006-12-13 2010-08-06 엘지전자 주식회사 태양전지
US8733279B2 (en) * 2007-02-27 2014-05-27 Applied Materials, Inc. PECVD process chamber backing plate reinforcement
US7993700B2 (en) * 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
KR20100015622A (ko) * 2007-03-16 2010-02-12 비피 코포레이션 노쓰 아메리카 인코포레이티드 태양 전지
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US7727866B2 (en) * 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
EP2195853B1 (en) * 2008-04-17 2015-12-16 LG Electronics Inc. Solar cell and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JP2013524549A5 (https=)
WO2011130017A3 (en) Multi-layer sin for functional and optical graded arc layers on crystalline solar cells
KR102449540B1 (ko) 결정질 규소를 갖는 태양 전지의 수광 표면의 패시베이션
Martín et al. Laser processing of Al2O3/a‐SiCx: H stacks: a feasible solution for the rear surface of high‐efficiency p‐type c‐Si solar cells
JP2009010351A5 (https=)
Li et al. Ultrathin flexible planar crystalline-silicon/polymer hybrid solar cell with 5.68% efficiency by effective passivation
CN107845702A (zh) 一种晶硅硅片的钝化层处理方法及晶硅太阳能电池
Dekkers et al. Requirements of PECVD SiNx: H layers for bulk passivation of mc-Si
CN206619599U (zh) 一种双面钝化太阳能电池
Wang et al. High-performance Si/organic hybrid solar cells using a novel cone-shaped Si nanoholes structures and back surface passivation layer
CN109244182A (zh) 一种黑硅perc双面电池及其制作方法
CN109935647A (zh) 太阳能电池及其制备方法
TWI552366B (zh) 用於製造太陽能電池的方法
CN108807579B (zh) 薄膜封装方法和器件、薄膜封装系统、太阳能电池
CN106898543A (zh) Al2O3薄膜钝化硅基纳米线的方法及器件
Zhang et al. Core-shell structured Si/ZnO photovoltaics
KR20190061325A (ko) 전하 선택 접합형 태양전지 및 이의 제조 방법
CN204315578U (zh) 一种抗电势诱导衰减的太阳能电池
TWI511316B (zh) 異質接面太陽能電池及其製造方法
JP2014154656A (ja) 結晶シリコン型太陽電池、およびその製造方法
Liu et al. Enhanced device performance of Si nanowires/Si nanocrystals heterojunction solar cells with ultrathin Al2O3 passivation
TW201622161A (zh) 具有鈍化層之光伏電池以及製造該光伏電池之方法
CN211828778U (zh) 一种perc电池背面复合钝化膜
Hsu et al. High‐Efficiency 6′′ Multicrystalline Black Solar Cells Based on Metal‐Nanoparticle‐Assisted Chemical Etching
Wang et al. Radial junction silicon nanowire photovoltaics with heterojunction with intrinsic thin layer (HIT) structure