JP2013524520A - 改良されたウェハシンギュレーション方法及び装置 - Google Patents

改良されたウェハシンギュレーション方法及び装置 Download PDF

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Publication number
JP2013524520A
JP2013524520A JP2013502856A JP2013502856A JP2013524520A JP 2013524520 A JP2013524520 A JP 2013524520A JP 2013502856 A JP2013502856 A JP 2013502856A JP 2013502856 A JP2013502856 A JP 2013502856A JP 2013524520 A JP2013524520 A JP 2013524520A
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Japan
Prior art keywords
laser
wafer
lasers
substrate
daf
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JP2013502856A
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English (en)
Japanese (ja)
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JP2013524520A5 (enExample
Inventor
康 大迫
チョー，ボン
フィン，ダラ
フーパー，アンドリュー
オブライアン，ジェームズ
Original Assignee
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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Publication of JP2013524520A publication Critical patent/JP2013524520A/ja
Publication of JP2013524520A5 publication Critical patent/JP2013524520A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2013502856A 2010-04-02 2011-03-31 改良されたウェハシンギュレーション方法及び装置 Withdrawn JP2013524520A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US32047610P 2010-04-02 2010-04-02
US61/320,476 2010-04-02
US13/076,238 2011-03-30
US13/076,238 US20110287607A1 (en) 2010-04-02 2011-03-30 Method and apparatus for improved wafer singulation
PCT/US2011/030765 WO2011123670A2 (en) 2010-04-02 2011-03-31 Method and apparatus for improved wafer singulation

Publications (2)

Publication Number Publication Date
JP2013524520A true JP2013524520A (ja) 2013-06-17
JP2013524520A5 JP2013524520A5 (enExample) 2014-05-08

Family

ID=44712845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013502856A Withdrawn JP2013524520A (ja) 2010-04-02 2011-03-31 改良されたウェハシンギュレーション方法及び装置

Country Status (7)

Country Link
US (1) US20110287607A1 (enExample)
EP (1) EP2553721A2 (enExample)
JP (1) JP2013524520A (enExample)
KR (1) KR20130014522A (enExample)
CN (1) CN102918642A (enExample)
TW (1) TW201206605A (enExample)
WO (1) WO2011123670A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014101021A (ja) * 2012-11-20 2014-06-05 Toyota Motor Corp 車両用ルーフのレーザロウ付け方法
KR20200059066A (ko) * 2018-11-20 2020-05-28 한화정밀기계 주식회사 웨이퍼 절단 방법 및 절단 장치

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921733B2 (en) 2003-08-11 2014-12-30 Raydiance, Inc. Methods and systems for trimming circuits
JP5473414B2 (ja) * 2009-06-10 2014-04-16 株式会社ディスコ レーザ加工装置
US20110287607A1 (en) * 2010-04-02 2011-11-24 Electro Scientific Industries, Inc. Method and apparatus for improved wafer singulation
EP2409808A1 (de) * 2010-07-22 2012-01-25 Bystronic Laser AG Laserbearbeitungsmaschine
WO2012021748A1 (en) 2010-08-12 2012-02-16 Raydiance, Inc. Polymer tubing laser micromachining
US9120181B2 (en) * 2010-09-16 2015-09-01 Coherent, Inc. Singulation of layered materials using selectively variable laser output
US8361828B1 (en) * 2011-08-31 2013-01-29 Alta Devices, Inc. Aligned frontside backside laser dicing of semiconductor films
US10239160B2 (en) 2011-09-21 2019-03-26 Coherent, Inc. Systems and processes that singulate materials
US9492990B2 (en) 2011-11-08 2016-11-15 Picosys Incorporated Room temperature glass-to-glass, glass-to-plastic and glass-to-ceramic/semiconductor bonding
SG193711A1 (en) * 2012-03-16 2013-10-30 Advanced Laser Separation Internat Alsi N V Method of singulating a thin semiconductor wafer
JP6000700B2 (ja) * 2012-07-10 2016-10-05 株式会社ディスコ レーザー加工方法
CN104822485B (zh) * 2012-11-30 2017-08-08 夏伊洛工业公司 在金属板材件中形成焊接凹口的方法
US9919380B2 (en) 2013-02-23 2018-03-20 Coherent, Inc. Shaping of brittle materials with controlled surface and bulk properties
JP2015109408A (ja) * 2013-10-22 2015-06-11 マイクロン テクノロジー， インク． 複合チップ、半導体装置、及び半導体装置の製造方法
EP2883647B1 (de) 2013-12-12 2019-05-29 Bystronic Laser AG Verfahren zur Konfiguration einer Laserbearbeitungsvorrichtung
US10307867B2 (en) * 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers
DE102015212444B4 (de) * 2015-06-12 2025-01-30 Schuler Pressen Gmbh Verfahren zur Herstellung einer Blechplatine
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
JP6666173B2 (ja) * 2016-03-09 2020-03-13 株式会社ディスコ レーザー加工装置
KR20170140969A (ko) * 2016-06-14 2017-12-22 (주)제이티 반도체칩모듈의 제조방법
US10720360B2 (en) * 2016-07-29 2020-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die singulation and structures formed thereby
US10347534B2 (en) 2017-09-12 2019-07-09 Nxp B.V. Variable stealth laser dicing process
KR102174928B1 (ko) * 2019-02-01 2020-11-05 레이저쎌 주식회사 멀티 빔 레이저 디본딩 장치 및 방법
US20220399234A1 (en) * 2021-06-15 2022-12-15 Nxp B.V. Semiconductor die singulation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552345A (en) * 1993-09-22 1996-09-03 Harris Corporation Die separation method for silicon on diamond circuit structures
US6562698B2 (en) * 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
SG108262A1 (en) * 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
JP2004186200A (ja) * 2002-11-29 2004-07-02 Sekisui Chem Co Ltd 半導体チップの製造方法
US7129114B2 (en) * 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
JP4736379B2 (ja) * 2004-09-07 2011-07-27 日立化成工業株式会社 接着シート付き半導体素子の製造方法、接着シート、及びダイシングテープ一体型接着シート
KR100648898B1 (ko) * 2005-08-18 2006-11-27 주식회사 젯텍 2개의 레이저를 이용한 웨이퍼의 분할방법 및 장치
JP2007081037A (ja) * 2005-09-13 2007-03-29 Disco Abrasive Syst Ltd デバイスおよびその製造方法
US8598490B2 (en) * 2008-03-31 2013-12-03 Electro Scientific Industries, Inc. Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes
US8383984B2 (en) * 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
US20110287607A1 (en) * 2010-04-02 2011-11-24 Electro Scientific Industries, Inc. Method and apparatus for improved wafer singulation
KR20120043933A (ko) * 2010-10-27 2012-05-07 삼성전자주식회사 반도체 장치의 제조방법
US8673741B2 (en) * 2011-06-24 2014-03-18 Electro Scientific Industries, Inc Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014101021A (ja) * 2012-11-20 2014-06-05 Toyota Motor Corp 車両用ルーフのレーザロウ付け方法
KR20200059066A (ko) * 2018-11-20 2020-05-28 한화정밀기계 주식회사 웨이퍼 절단 방법 및 절단 장치
KR102158832B1 (ko) 2018-11-20 2020-09-22 한화정밀기계 주식회사 웨이퍼 절단 방법 및 절단 장치

Also Published As

Publication number Publication date
US20110287607A1 (en) 2011-11-24
KR20130014522A (ko) 2013-02-07
WO2011123670A3 (en) 2012-01-12
TW201206605A (en) 2012-02-16
EP2553721A2 (en) 2013-02-06
CN102918642A (zh) 2013-02-06
WO2011123670A2 (en) 2011-10-06

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