JP2013524001A - 蒸発器チャンバを補充する方法および装置 - Google Patents
蒸発器チャンバを補充する方法および装置 Download PDFInfo
- Publication number
- JP2013524001A JP2013524001A JP2013500492A JP2013500492A JP2013524001A JP 2013524001 A JP2013524001 A JP 2013524001A JP 2013500492 A JP2013500492 A JP 2013500492A JP 2013500492 A JP2013500492 A JP 2013500492A JP 2013524001 A JP2013524001 A JP 2013524001A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- chamber
- vacuum
- selenium
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000005192 partition Methods 0.000 claims abstract description 23
- 239000011343 solid material Substances 0.000 claims abstract description 18
- 239000011344 liquid material Substances 0.000 claims abstract description 14
- 239000002699 waste material Substances 0.000 claims abstract description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 86
- 229910052711 selenium Inorganic materials 0.000 claims description 64
- 239000011669 selenium Substances 0.000 claims description 64
- 238000001816 cooling Methods 0.000 claims description 25
- 229910052717 sulfur Inorganic materials 0.000 claims description 13
- 239000011593 sulfur Substances 0.000 claims description 12
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 210000003298 dental enamel Anatomy 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000002480 mineral oil Substances 0.000 claims description 2
- 235000010446 mineral oil Nutrition 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 19
- 239000007787 solid Substances 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012466 permeate Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- PTXMVOUNAHFTFC-UHFFFAOYSA-N alumane;vanadium Chemical compound [AlH3].[V] PTXMVOUNAHFTFC-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
- F16L53/30—Heating of pipes or pipe systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/6416—With heating or cooling of the system
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85978—With pump
- Y10T137/86083—Vacuum pump
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10157912.6 | 2010-03-26 | ||
| EP20100157912 EP2369033A1 (de) | 2010-03-26 | 2010-03-26 | Verfahren zum Nachfüllen einer Verdampferkammer |
| PCT/EP2011/054433 WO2011117291A1 (de) | 2010-03-26 | 2011-03-23 | Verfahren und vorrichtung zum nachfüllen einer verdampferkammer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013524001A true JP2013524001A (ja) | 2013-06-17 |
| JP2013524001A5 JP2013524001A5 (https=) | 2014-11-27 |
Family
ID=42232778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013500492A Pending JP2013524001A (ja) | 2010-03-26 | 2011-03-23 | 蒸発器チャンバを補充する方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20130098453A1 (https=) |
| EP (2) | EP2369033A1 (https=) |
| JP (1) | JP2013524001A (https=) |
| KR (1) | KR20130008024A (https=) |
| CN (1) | CN102812151A (https=) |
| ES (1) | ES2614944T3 (https=) |
| WO (1) | WO2011117291A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101461738B1 (ko) | 2012-12-21 | 2014-11-14 | 주식회사 포스코 | 가열장치 및 이를 포함하는 코팅 시스템 |
| KR101778441B1 (ko) * | 2016-05-16 | 2017-09-14 | 주식회사 포스코 | 건식코팅장치 |
| GB2574400B (en) * | 2018-06-04 | 2022-11-23 | Dyson Technology Ltd | A Device |
| CN113564534B (zh) * | 2020-04-28 | 2023-05-09 | 宝山钢铁股份有限公司 | 一种真空镀机组镀液连续供给装置及其供给方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57137463A (en) * | 1981-02-20 | 1982-08-25 | Canon Inc | Vapor depositing method |
| JPH0521578A (ja) * | 1991-07-15 | 1993-01-29 | Fujitsu Ltd | 半導体製造装置 |
| JP2002522637A (ja) * | 1998-08-03 | 2002-07-23 | ザ・コカ−コーラ・カンパニー | 固体の蒸発、アーク放電、及びイオン化と蒸発の測定のための諸システムを含んだプラズマ強化真空蒸着システム |
| JP2004244485A (ja) * | 2003-02-13 | 2004-09-02 | Sumitomo Electric Ind Ltd | 熱媒体 |
| JP2008500454A (ja) * | 2004-05-27 | 2008-01-10 | ズィードラーベ インコーポレイテッド | 金属及び合金の蒸発による真空蒸着方法及び真空蒸着装置 |
| JP2008248362A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | セレン蒸着装置 |
| WO2009010468A1 (en) * | 2007-07-19 | 2009-01-22 | Applied Materials, Inc. | Vacuum evaporation apparatus for solid materials |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4366721A (en) * | 1981-02-10 | 1983-01-04 | Union Carbide Corporation | Molten metal sampling device |
| FR2611746B1 (fr) | 1987-03-06 | 1989-06-30 | Centre Nat Etd Spatiales | Dispositif d'evaporation sous vide d'un metal en continu |
| JPH02118064A (ja) * | 1988-10-27 | 1990-05-02 | Mitsubishi Heavy Ind Ltd | 真空蒸着装置 |
| US5526867A (en) * | 1988-11-10 | 1996-06-18 | Lanxide Technology Company, Lp | Methods of forming electronic packages |
| US5407000A (en) * | 1992-02-13 | 1995-04-18 | The Dow Chemical Company | Method and apparatus for handling molten metals |
| DE4442824C1 (de) | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| JP3823591B2 (ja) * | 1999-03-25 | 2006-09-20 | 三菱電機株式会社 | Cvd原料用気化装置およびこれを用いたcvd装置 |
| US6909839B2 (en) * | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
| WO2005061756A1 (en) * | 2003-12-09 | 2005-07-07 | Osemi, Inc. | High temperature vacuum evaporation apparatus |
| DE102005062977B3 (de) | 2005-12-28 | 2007-09-13 | Sulfurcell Solartechnik Gmbh | Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen |
| DE112007002897A5 (de) * | 2006-09-29 | 2009-09-03 | Von Ardenne Anlagentechnik Gmbh | Vakuumbeschichtungsverfahren und Anordnung zur Durchführung des Verfahrens |
| US20090020070A1 (en) * | 2007-07-19 | 2009-01-22 | Michael Schafer | Vacuum evaporation apparatus for solid materials |
| AU2008297944A1 (en) | 2007-09-11 | 2009-03-19 | Centrotherm Photovoltaics Ag | Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module |
| EP2048261A1 (fr) * | 2007-10-12 | 2009-04-15 | ArcelorMittal France | Générateur de vapeur industriel pour le dépôt d'un revêtement d'alliage sur une bande métallique |
-
2010
- 2010-03-26 EP EP20100157912 patent/EP2369033A1/de not_active Withdrawn
-
2011
- 2011-03-23 CN CN2011800162797A patent/CN102812151A/zh active Pending
- 2011-03-23 WO PCT/EP2011/054433 patent/WO2011117291A1/de not_active Ceased
- 2011-03-23 EP EP11709945.7A patent/EP2553136B1/de active Active
- 2011-03-23 US US13/576,388 patent/US20130098453A1/en not_active Abandoned
- 2011-03-23 ES ES11709945.7T patent/ES2614944T3/es active Active
- 2011-03-23 KR KR1020127024316A patent/KR20130008024A/ko not_active Ceased
- 2011-03-23 JP JP2013500492A patent/JP2013524001A/ja active Pending
-
2014
- 2014-10-07 US US14/508,802 patent/US20150020896A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57137463A (en) * | 1981-02-20 | 1982-08-25 | Canon Inc | Vapor depositing method |
| JPH0521578A (ja) * | 1991-07-15 | 1993-01-29 | Fujitsu Ltd | 半導体製造装置 |
| JP2002522637A (ja) * | 1998-08-03 | 2002-07-23 | ザ・コカ−コーラ・カンパニー | 固体の蒸発、アーク放電、及びイオン化と蒸発の測定のための諸システムを含んだプラズマ強化真空蒸着システム |
| JP2004244485A (ja) * | 2003-02-13 | 2004-09-02 | Sumitomo Electric Ind Ltd | 熱媒体 |
| JP2008500454A (ja) * | 2004-05-27 | 2008-01-10 | ズィードラーベ インコーポレイテッド | 金属及び合金の蒸発による真空蒸着方法及び真空蒸着装置 |
| JP2008248362A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | セレン蒸着装置 |
| WO2009010468A1 (en) * | 2007-07-19 | 2009-01-22 | Applied Materials, Inc. | Vacuum evaporation apparatus for solid materials |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2553136A1 (de) | 2013-02-06 |
| US20130098453A1 (en) | 2013-04-25 |
| CN102812151A (zh) | 2012-12-05 |
| EP2553136B1 (de) | 2016-11-09 |
| US20150020896A1 (en) | 2015-01-22 |
| KR20130008024A (ko) | 2013-01-21 |
| ES2614944T3 (es) | 2017-06-02 |
| WO2011117291A1 (de) | 2011-09-29 |
| EP2369033A1 (de) | 2011-09-28 |
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