JP2013523553A - 流体供給装置 - Google Patents
流体供給装置 Download PDFInfo
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- JP2013523553A JP2013523553A JP2013504809A JP2013504809A JP2013523553A JP 2013523553 A JP2013523553 A JP 2013523553A JP 2013504809 A JP2013504809 A JP 2013504809A JP 2013504809 A JP2013504809 A JP 2013504809A JP 2013523553 A JP2013523553 A JP 2013523553A
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- 239000004698 Polyethylene Substances 0.000 description 8
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
- B05B9/03—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
- B05B9/04—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material with pressurised or compressible container; with pump
- B05B9/047—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material with pressurised or compressible container; with pump supply being effected by follower in container, e.g. membrane or floating piston, or by deformation of container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Containers And Packaging Bodies Having A Special Means To Remove Contents (AREA)
- Devices For Dispensing Beverages (AREA)
- Loading And Unloading Of Fuel Tanks Or Ships (AREA)
- Weting (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Abstract
【選択図】図4
Description
Claims (10)
- 製造システムで使用される流体を貯蔵するための内部容器と、
内側に前記内部容器が位置する外部容器と、
前記内部容器に貯蔵された流体を製造システムに供給するための第1連結ユニットが設置され、前記外部容器に結合される連結部と、
製造システムに備えられた設置面に支持されるための第1支持面を含む第1ケースと、を含み、
前記外部容器は、前記連結部と前記内部容器が連通するように連結されるための通路機構を含み、製造システムに流体を供給するとき、前記通路機構が重力方向に向かうように、製造システムに備えられた設置面に向かうように設置され、
前記第1ケースは、内側に前記連結部が位置するように前記外部容器に結合されることを特徴とする、流体供給装置。 - 前記連結部は、前記外部容器に結合される結合機構、及び前記結合機構に結合されるプローブ機構を含み、
前記プローブ機構は、前記内部容器に貯蔵された流体が流入するための第1流入孔、及び前記第1流入孔に連通するように形成され、前記第1流入孔を通じて流入した流体が前記第1連結ユニットへ移動されるための通路孔を含み、
前記第1連結ユニットは、前記通路孔に連通するように前記プローブ機構に結合されることを特徴とする、請求項1に記載の流体供給装置。 - 前記結合機構は、前記プローブ機構を支持するための支持部材を含み、
前記プローブ機構は、前記支持部材に支持されるための突出部材を含むことを特徴とする、請求項2に記載の流体供給装置。 - 前記通路機構は、前記結合機構が締結されるための第1締結部材を含み、
前記結合機構は、前記第1締結部材と締結されるための第2締結部材を含むことを特徴とする、請求項2に記載の流体供給装置。 - 前記連結部には、前記内部容器に力を加えるための気体が供給される第2連結ユニットが設置され、
前記結合機構は、前記第2連結ユニットから供給される気体が前記内部容器と前記外部容器との間の空間に供給されるように、前記内部容器と前記外部容器との間の空間に連通するように連結される第1連結孔を含み、
前記プローブ機構は、前記第2連結ユニットと前記第1連結孔にそれぞれ連通するように連結される第2連結孔を含むことを特徴とする、請求項2に記載の流体供給装置。 - 前記第1連結ユニットは、
前記内部容器から排出される流体が製造システムに供給されるための排出孔が形成された第1連結ボディーと、
前記排出孔を閉鎖させる第1位置と前記排出孔を開放させる第2位置間に移動可能なように前記第1連結ボディーに結合される開閉部材と、
前記開閉部材が前記排出孔を閉鎖させる方向に、前記開閉部材に弾性力を提供する弾性部材を含むことを特徴とする、請求項1に記載の流体供給装置。 - 前記連結部は、一側が前記内部容器に連通するように連結され、他側が前記第1連結ユニットに連通するように連結されるプローブ機構を含み、
前記プローブ機構は、前記内部容器に貯蔵された流体が前記第1連結ユニットへ移動されるための通路孔、前記通路孔に連通するように形成され、前記内部容器に貯蔵された流体が流入するための第1流入孔、及び前記通路孔に連通するように形成され、前記内部容器に貯蔵された流体が流入するための第2流入孔を含み、
前記第1流入孔は、前記プローブ機構の一端に形成され、前記第2流入孔は、前記プローブ機構の一端から他端に向かう方向に、前記第1流入孔から離隔した位置に形成されたことを特徴とする、請求項1に記載の流体供給装置。 - 前記プローブ機構は、前記第2流入孔が前記内部容器の内側に位置するように設置され、
前記第2流入孔は、前記内部容器に連通するように連結される入口が前記通路孔に連通するように連結される出口よりも前記プローブ機構の一端に近く位置するように斜めに形成されたことを特徴とする、請求項7に記載の流体供給装置。 - 前記内部容器は、第1容器部材、第2容器部材、及び前記第1容器部材と前記第2容器部材との間に製造システムで使用される流体が貯蔵されるための貯蔵部が形成されるように、前記第1容器部材と前記第2容器部材とを結合させる密封部を含み、
前記密封部は、前記貯蔵部がN(Nは、4より大きい整数)個の辺を有するように形成されたことを特徴とする、請求項1に記載の流体供給装置。 - 前記第1容器部材は、前記内部容器の外側の一面をなす第1外部シート、及び前記第1外部シートの内側に位置する第1内部シートを含み、
前記第2容器部材は、前記内部容器の外側の他面をなす第2外部シート、及び前記第2外部シートの内側に位置する第2内部シートを含み、
前記貯蔵部は、前記第1内部シートと前記第2内部シートとの間に形成されたことを特徴とする、請求項9に記載の流体供給装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020100033284A KR100973707B1 (ko) | 2010-04-12 | 2010-04-12 | 유체공급장치 |
KR10-2010-0033284 | 2010-04-12 | ||
PCT/KR2011/002511 WO2011129560A2 (ko) | 2010-04-12 | 2011-04-11 | 유체공급장치 |
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JP2013523553A true JP2013523553A (ja) | 2013-06-17 |
JP5438243B2 JP5438243B2 (ja) | 2014-03-12 |
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JP2013504809A Active JP5438243B2 (ja) | 2010-04-12 | 2011-04-11 | 流体供給装置 |
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JP (1) | JP5438243B2 (ja) |
KR (1) | KR100973707B1 (ja) |
CN (1) | CN102844837B (ja) |
WO (1) | WO2011129560A2 (ja) |
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CN103496513A (zh) * | 2013-10-09 | 2014-01-08 | 上海和辉光电有限公司 | 光刻胶内袋 |
SG11201603057SA (en) | 2013-10-18 | 2016-05-30 | Advanced Tech Materials | Dip tube assemblies and methods of manufacturing the same |
WO2015081021A1 (en) | 2013-11-26 | 2015-06-04 | Advanced Technology Materials, Inc. | Fitment and fitment adapter for dispensing systems and methods for manufacturing same |
EP3206969A4 (en) | 2014-10-17 | 2018-05-30 | Entegris, Inc. | Packaging for dip tubes |
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JPH08310573A (ja) * | 1995-05-18 | 1996-11-26 | Toshiba Mach Co Ltd | 圧力容器 |
JP3499152B2 (ja) * | 1999-04-30 | 2004-02-23 | 岩谷産業株式会社 | ガス貯蔵ボンベの内面処理方法 |
US6237891B1 (en) * | 1999-09-08 | 2001-05-29 | Burnswick Corporation | Adaptor for use of alternate gas fuel |
JP2002120893A (ja) * | 2000-10-16 | 2002-04-23 | Brain Five:Kk | 給液用容器 |
WO2006116389A2 (en) * | 2005-04-25 | 2006-11-02 | Advanced Technology Materials, Inc. | Material storage and dispensing packages and methods |
KR100748644B1 (ko) * | 2005-05-19 | 2007-08-10 | 김승수 | 다중벽으로 다중공간을 구비한 압력유체 저장용기,저장방법 및 그 제조방법 |
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- 2011-04-11 JP JP2013504809A patent/JP5438243B2/ja active Active
- 2011-04-11 WO PCT/KR2011/002511 patent/WO2011129560A2/ko active Application Filing
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CN102844837B (zh) | 2014-04-16 |
JP5438243B2 (ja) | 2014-03-12 |
WO2011129560A2 (ko) | 2011-10-20 |
KR100973707B1 (ko) | 2010-08-04 |
WO2011129560A3 (ko) | 2012-03-08 |
CN102844837A (zh) | 2012-12-26 |
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