JP2013508965A - 半導体デバイス - Google Patents
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- JP2013508965A JP2013508965A JP2012535137A JP2012535137A JP2013508965A JP 2013508965 A JP2013508965 A JP 2013508965A JP 2012535137 A JP2012535137 A JP 2012535137A JP 2012535137 A JP2012535137 A JP 2012535137A JP 2013508965 A JP2013508965 A JP 2013508965A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 130
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 239000002184 metal Substances 0.000 claims abstract description 118
- 230000004888 barrier function Effects 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 62
- 150000001875 compounds Chemical class 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 230000010287 polarization Effects 0.000 claims description 19
- 230000005684 electric field Effects 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000002073 nanorod Substances 0.000 claims description 7
- 239000002096 quantum dot Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 13
- 239000000969 carrier Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002164 ion-beam lithography Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000004651 near-field scanning optical microscopy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910021593 Copper(I) fluoride Inorganic materials 0.000 description 1
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 1
- -1 InGaN Chemical compound 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 241001591005 Siga Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910021608 Silver(I) fluoride Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (22)
- 第1のバンドギャップを有する活性層、および前記活性層の少なくとも1つの面に配置される1つまたは複数の障壁層を備える発光層であって、前記障壁層が第2のバンドギャップを有する発光層と、
前記発光層に接触する少なくとも1つの表面プラズモン金属層と
を備え、
前記第1のバンドギャップが前記第2のバンドギャップよりも小さい
半導体デバイス。 - 前記活性層および前記1つまたは複数の障壁層のそれぞれが、IV族半導体材料、IV−IV族化合物半導体材料、III−V族化合物半導体材料、II−VI族化合物半導体材料、またはI−VII族化合物半導体材料から構成される請求項1に記載の半導体デバイス。
- 前記少なくとも1つの表面プラズモン金属層の誘電率が、前記活性層および前記1つまたは複数の障壁層の誘電率よりも大きい請求項1に記載の半導体デバイス。
- 前記少なくとも1つの表面プラズモン金属層が、Au、Ag、Cu、またはその合金を備える請求項1に記載の半導体デバイス。
- 前記発光層の一方の側面に配置された第1のドープ層と、
前記発光層の他方の側面に配置された第2のドープ層と
をさらに備え、
前記少なくとも1つの表面プラズモン金属層が、前記発光層の上面に配置される請求項1に記載の半導体デバイス。 - 前記第1のドープ層の1つの面に配置された第1の電極と、
前記第2のドープ層の1つの面に配置された第2の電極と
をさらに備える請求項5に記載の半導体デバイス。 - 前記発光層の前記上面に配置され、前記少なくとも1つの表面プラズモン金属層から離間され、前記発光層の中の内部分極電界を補償するまたは打ち消すために、前記発光層に電界を印加するゲート電極をさらに備える請求項5に記載の半導体デバイス。
- 前記ゲート電極が透明導電材料から構成される請求項7に記載の半導体デバイス。
- 前記少なくとも1つの表面プラズモン金属層が前記発光層の少なくとも1つの側面に配置され、
前記半導体デバイスが、
前記発光層と前記少なくとも1つの表面プラズモン金属層の両方の下に配置される第1の部分ならびに前記第1の部分から水平に延びる第2の部分を備える第1のドープ層と、
前記発光層の上面に配置される第2のドープ層と
をさらに備える請求項1に記載の半導体デバイス。 - 前記第1のドープ層の前記第2の部分に部分的に配置される第1の電極と、
前記第2のドープ層の上面に配置される第2の電極と
をさらに備える請求項9に記載の半導体デバイス。 - 前記第1のドープ層がn型ドープ層であり、前記第2のドープ層がp型ドープ層である請求項5に記載の半導体デバイス。
- 前記活性層が、量子細線、量子ドット、およびナノロッドのうちの少なくとも1つを備える請求項1に記載の半導体デバイス。
- 第1のバンドギャップを有する活性層、および前記活性層の少なくとも1つの面に配置される1つまたは複数の障壁層を備える発光層であって、前記障壁層が第2のバンドギャップを有する発光層と、
前記発光層の第1の面と接触する少なくとも1つの表面プラズモン金属層と、
前記発光層の第2の面に配置されたn型ドープ層と、
前記発光層の第3の面に配置されたp型ドープ層と
を備え、
前記第1のバンドギャップが前記第2のバンドギャップよりも小さく、
前記第2の面と第3の面が互いに対向し、前記第1の面が前記第2の面と第3の面の間にある
短波長発光体。 - 前記発光層の前記第1の面に配置され、前記少なくとも1つの表面プラズモン金属層から離間され、前記発光層の中の内部分極電界を補償するまたは打ち消すために、前記発光層に電界を印加するゲート電極をさらに備える請求項13に記載の短波長発光体。
- 前記第1の面、第2の面および第3の面が、それぞれ、上面、一方の側面および他方の側面である請求項13に記載の短波長発光体。
- 前記第1の面、第2の面および第3の面が、それぞれ、側面、底面、および上面である請求項13に記載の短波長発光体。
- 基板上に第1のバンドギャップを有する活性層を形成することと、
前記活性層の少なくとも1つの面に第2のバンドギャップを有する1つまたは複数の障壁層を形成することであって、前記活性層および前記1つまたは複数の障壁層が発光層を構成することと、
前記発光層に接触する少なくとも1つの表面プラズモン金属層を形成することと
を含み、
前記第1のバンドギャップが前記第2のバンドギャップよりも小さい
半導体デバイスの製造方法。 - 前記活性層および前記少なくとも1つの障壁層のそれぞれが、IV族半導体材料、IV−IV族化合物半導体材料、III−V族化合物半導体材料、II−VI族化合物半導体材料、またはI−VII族化合物半導体材料から構成され、
前記少なくとも1つの表面プラズモン金属層が、Au、Ag、Cu、またはその合金を備える
請求項17に記載の方法。 - 前記活性層を形成することおよび前記少なくとも1つの障壁層を形成することの少なくとも1つが、無線周波数(RF)マグネトロンスパッタリング、パルスレーザ堆積、有機金属化学気相堆積(MOCVD)、分子線エピタキシ、または無線周波数プラズマ励起分子線エピタキシを使用することを含む請求項17に記載の方法。
- 前記発光層の一方の側面にn型ドープ層を形成することと、
前記発光層の他方の側面にp型ドープ層を形成することと
をさらに含み、
前記少なくとも1つの表面プラズモン金属層が、前記発光層の上面に配置される
請求項17に記載の方法。 - ゲート電極が前記少なくとも1つの表面プラズモン金属層から離間するように、前記ゲート電極を前記発光層の前記上面に形成すること
をさらに含む請求項20に記載の方法。 - 前記ゲート電極が透明導電材料から構成される請求項21に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/606,880 US8368047B2 (en) | 2009-10-27 | 2009-10-27 | Semiconductor device |
US12/606,880 | 2009-10-27 | ||
PCT/KR2010/007292 WO2011052932A1 (en) | 2009-10-27 | 2010-10-22 | Semiconductor device |
Publications (2)
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JP2013508965A true JP2013508965A (ja) | 2013-03-07 |
JP5903383B2 JP5903383B2 (ja) | 2016-04-13 |
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US (1) | US8368047B2 (ja) |
JP (1) | JP5903383B2 (ja) |
WO (1) | WO2011052932A1 (ja) |
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US8373153B2 (en) * | 2009-05-26 | 2013-02-12 | University Of Seoul Industry Cooperation Foundation | Photodetectors |
US8367925B2 (en) * | 2009-06-29 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Light-electricity conversion device |
US8748862B2 (en) * | 2009-07-06 | 2014-06-10 | University Of Seoul Industry Cooperation Foundation | Compound semiconductors |
US8395141B2 (en) * | 2009-07-06 | 2013-03-12 | University Of Seoul Industry Cooperation Foundation | Compound semiconductors |
US8809834B2 (en) | 2009-07-06 | 2014-08-19 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting long wavelength radiation |
US8227793B2 (en) * | 2009-07-06 | 2012-07-24 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting the visible light spectrum |
US8368990B2 (en) * | 2009-08-21 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Polariton mode optical switch with composite structure |
US8368047B2 (en) * | 2009-10-27 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US8058641B2 (en) | 2009-11-18 | 2011-11-15 | University of Seoul Industry Corporation Foundation | Copper blend I-VII compound semiconductor light-emitting devices |
RU2552386C1 (ru) * | 2014-02-19 | 2015-06-10 | Валерий Николаевич Конопский | Полупроводниковый источник излучения на длиннопробежных поверхностных плазмонах |
CN104465905A (zh) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | 采用侧壁等离激元技术提高紫外发光二极管效率的方法 |
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US8368047B2 (en) | 2013-02-05 |
JP5903383B2 (ja) | 2016-04-13 |
US20110095309A1 (en) | 2011-04-28 |
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