JP2013508958A - 基板上への電気部品、電子部品、またはマイクロメカニクス部品の自己組立て方法 - Google Patents
基板上への電気部品、電子部品、またはマイクロメカニクス部品の自己組立て方法 Download PDFInfo
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- JP2013508958A JP2013508958A JP2012534612A JP2012534612A JP2013508958A JP 2013508958 A JP2013508958 A JP 2013508958A JP 2012534612 A JP2012534612 A JP 2012534612A JP 2012534612 A JP2012534612 A JP 2012534612A JP 2013508958 A JP2013508958 A JP 2013508958A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
- Y10T156/1051—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by folding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Die Bonding (AREA)
Abstract
【選択図】なし
Description
タイプEF 410の印刷装置(MPS製)ならびにスリーブ、スリーブアダプター、および空気シリンダー(COE製)を用いて、PETフィルム(Mylar ADS、Dupon Teijin)上の3%の光開始剤A17(Evonik Industries製)を有する25℃で測定された590mPa・sの粘度を有するアクリレート変性放射線硬化性シリコーン樹脂(Evonik Industries製のTEG(登録商標)XP 8019)を基板上に印刷し、いずれの各場合もシリコーン樹脂配合物が印刷されていない640μmの辺の長さを有する自由内側正方形の周りに300μmのフレーム幅を有する複数のシリコーン樹脂フレームを作製した。その後、同一の印刷装置内で、紫外線照射で不活性とするランプ(窒素を供給することにより酸素含有率を50ppmに低減させた)を用いてシリコーン樹脂を硬化させた。シリコーン樹脂層の層厚さは、1g/m2の適用重量に対応する1μmであった。続いて、次に、17nlの体積を有するDELO Industrie Klebstoffe製の接着剤Monopox(登録商標)AD VE 18507の液滴をいずれの各場合もシリコーンフレーム上または内側正方形上のさまざまな位置、具体的には、内側正方形近傍のシリコーンフレーム上の位置に適用した。この際、次に、接着剤は、接着剤液滴のごく一部が内側正方形に接触しないかぎり、内側正方形の中心に移動することが観測された(図1参照;「+」=目標位置への液滴の移動、「o」=目標位置への液滴の移動なし)。接着剤液滴は、目標位置の周りの1300×1300μm2の領域上に計量供給した場合、目標位置の適正な箇所(数μm(<10μm)まで正確に規定される)に移動することが観測された。これは、シリコーン樹脂による接着剤の適用が高速で堆積可能であり、それにもかかわらず、接着剤が所望の形状で適正な箇所に正確に着座するという利点を有する(図2参照)。
構造体の適用にReproflex製の印刷プレートを使用したこと以外は実施例1の場合と同様の実験。
撥接着性コーティング配合物としてカチオン架橋性シリコーン樹脂配合物(TEGO(登録商標)XP 8020)を使用したこと以外は実施例1の場合と同様の実験。
撥接着性コーティング配合物としてカチオン架橋性シリコーン樹脂配合物(TEGO(登録商標)XP 8020)を使用したこと以外は実施例2の場合と同様の実験。
400μmの幅を有するシリコーン樹脂フレームが追加的に印刷される実施例1と同様の実験。
DELO Industrie Klebstoffe製の接着剤Monopox AD VE 18507の代わりに3M製の接着剤RiteLok UV011を使用したこと以外は実施例1の場合と同様の実験。この場合も、チップはそれ自体で配向したが、Monopox AD VE 18507と比較してより遅い配向速度が観測された。その代わり、UV光によりすぐに接着剤を硬化させることが可能である。
3M製の接着剤RiteLok UV011と共にカチオン硬化性シリコーン樹脂配合物を使用したこと以外は実施例6の場合と同様の実験。この組合せの場合も同様に、接着剤およびチップの配向は機能する。
よく見えるように赤色着色シリコーン樹脂配合物(TEGO(登録商標)XP 8014)を使用したこと以外は実施例1の場合と同様の実験。それは配向に悪影響を及ぼさない。
シリコーン樹脂配合物で被覆されないさまざまな内側正方形を印刷したこと以外は実施例1と同様の実験。チップサイズと内側正方形との比を0.9〜2にすると、配向は特に確実に行われる。中心間距離および回転の補償に関して最も高い信頼性は、1.45の比で観測された。
異なる適用重量のシリコーン樹脂配合物を適用したこと以外は実施例1と同様の実験。DELO Industrie Klebstoffe製のMonopox(登録商標)AD VE 18507の接着剤液滴を導入することによる後続の試験の際に、シリコーン樹脂配合物を密閉(closed)層中に適用した場合に配向挙動の信頼性が幾分よくなることが観測された。実験時、約1g/m2の単位面積重量(Oxford Instruments製のtwin-X X線蛍光測定装置を用いて測定)から始めて密閉構造を同定した(M-Service製の同軸顕微鏡(CV STミニタイプ)を介して観測)。
異なる強度のコロナ前処理を使用したこと以外は実施例1と同様の実験。放射線硬化性コーティング配合物は、前処理されていない基板上でさえも良好な接着性を示すことが確証されたので、この工程は省略可能である。それに加えて、コロナ前処理されていない基板は、全過程を通じてより安定な性質を示すことが観測されたので、より良好な貯蔵寿命を有する。
より大きいチップ(2mmの辺の長さまで)を使用したこと以外は実施例1と同様の実験。より大きいチップを用いたときでさえも、特に撥接着性コーティング配合物のフレームサイズをチップのサイズに適合化させれば、確実に配向が可能である。実施例9に挙げたように内側正方形とチップサイズとの比を約1.45にしたところ、この場合も最良の結果が得られた。
いくつかの箇所でフレームを中断したこと以外は実施例1と同様の実験。この中断は、たとえば、印刷プロセスを利用してチップを導体トラックに接続するために使用可能である(たとえば、センサーまたは不正加工検査に関して)。中断は、自由状態のままのフレームの部分が内側正方形に対して大きくなりすぎないかぎり、配向挙動を妨害しない。最大許容中断は、接着剤の表面エネルギーに依存する。DELO Industrie Klebstoffe製のMonopox(登録商標)AD VE 18507を用いた場合、中断が内側正方形の辺の長さの1/10未満であるかぎり、配向挙動に及ぼす悪影響は観測されなかった。しかしながら、図1に示される接着剤の捕獲半径の図は、中断により影響を受ける。中断の近傍に降着した液滴は、より不十分に配向する傾向がある。
Claims (14)
- a)基板を提供する工程と、
b)部品の目標位置を構成しない前記基板の少なくとも1つの部分表面に撥接着性組成物を適用する工程およびそれに続く硬化工程と、
c)前記部品の目標位置を構成する前記基板の少なくとも1つの部分表面に接着性組成物を適用する工程であって、前記撥接着性組成物をそれぞれ備えた前記基板の部分表面は、前記接着性組成物を備えた前記基板の部分表面を取り囲みかつそれに隣接させる工程と、
d)b)またはc)に従ってコーティングされた部分表面に少なくとも1つの部品を適用する工程と、
を含む、基板上への少なくとも1つの電気部品、電子部品、またはマイクロメカニクス部品の自己組立て方法であって、
前記撥接着性組成物が、放射線硬化性非接着性コーティング配合物であることを特徴とする、方法。 - 前記個々の方法工程の時間的順序が、a)→b)→c)→d)であることを特徴とする、請求項1に記載の方法。
- 工程d)での少なくとも1つの部品の適用が、
i)複数の電子部品を有する供給物を前記電子部品の送出箇所に提供することと、
ii)前記部品の目標位置を構成しかつ前記撥接着性組成物および前記接着性組成物でコーティングされた前記基板の部分を前記送出箇所に対して少なくとも近傍に移動することと、
iii)前記部品の目標位置を構成する前記基板の部分表面が前記送出箇所の近傍に位置する間に、遊離相後に電子デバイスが前記接着剤組成物を備えた前記基板の部分表面に少なくとも部分的に接触するように前記送出箇所から前記電子デバイスの1つを非接触で送出することと、
iv)前記電子デバイスが前記目標位置上に配向している間に、この時点で前記部品を備えた前記基板の部分表面を下流の加工箇所に移動することと、
により行われることを特徴とする、請求項1または2に記載の方法。 - 前記基板が、弾性または塑性変形可能な材料から形成され、かつ前記部品の目標位置に延在するように形成された少なくとも1つのパスを有する電気伝導性パターン化を備え、以下の工程:
i)前記パスの部分を含むフラップを形成する目的で、前記部品の目標位置の周りおよび前記パターン化のパスの部分の周りの前記基板の領域内に穿孔箇所または脆弱箇所を設ける工程と、
ii)前記基板から前記フラップを持ち上げる工程と、
iii)前記フラップを折り重ねて、
iv)前記フラップ上に位置する部品が、前記部品の端子接点の少なくとも1つを用いて前記パターン化のパスの少なくとも一部分に接触させる工程と、
が行われることを特徴とする、請求項3に記載の方法。 - 前記放射線硬化性非接着性コーティング配合物が、放射線硬化性シリコーン樹脂およびポリフッ素化アルキル(メタ)アクリレート系またはポリフルオロオキシアルキレン(メタ)アクリレート系の放射線硬化性樹脂を含む群から選択されるコーティング配合物であることを特徴とする、請求項1〜4のいずれか1項に記載の方法。
- 前記放射線硬化性非接着性コーティング配合物が、(メタ)アクリレート基、エポキシド基、ビニルエーテル基、またはビニルオキシ基であるまたはそれらを含有する放射線硬化性側鎖を有することを特徴とする、請求項1〜5のいずれか1項に記載の方法。
- 前記放射線硬化性非接着性コーティング配合物が、DIN53019に準拠して25℃で測定される100〜1500mPa・sの粘度を有することを特徴とする、請求項1〜6のいずれか1項に記載の方法。
- 前記接着性組成物が、エポキシ、ポリウレタン、メタクリレート、シアノアクリレート、またはアクリレート接着性組成物であることを特徴とする、請求項1〜7のいずれか1項に記載の方法。
- 前記接着性組成物の粘度が、DIN53019に準拠して25℃で測定される10〜200mPa・sであることを特徴とする、請求項8に記載の方法。
- 前記接着性組成物が、金属粒子、金属ナノワイヤー、金属化ガラスで構成された粒子、金属化ポリマービーズ、および伝導性有機ポリマーを含む群から選択される添加剤を有することを特徴とする、請求項8または9に記載の方法。
- 前記基板が、ポリエチレンテレフタレート(PET)、ポリイミド(PI)、ポリエチレンナフタレート(PEN)、ポリブチレンテレフタレート(PBT)、ポリプロピレン(PP)、ポリエチレン(PE)、ポリスチレン(PS)、ポリアミド(PA)、もしくはポリエーテルエーテルケトン(PEEK)で構成されたフィルムもしくはラミネートまたは前記ポリマーの少なくとも1種に基づく構造強化複合材料であることを特徴とする、請求項1〜10のいずれか1項に記載の方法。
- 前記部品の目標位置を構成しない前記基板の部分表面と前記部品の目標位置を構成する前記基板の部分表面との面積比が5〜10の値になることを特徴とする、請求項1〜11のいずれか1項に記載の方法。
- 前記部品の目標位置を構成する前記基板の部分表面と前記部品の付着領域との面積比が0.9〜2.0の値になることを特徴とする、請求項1〜12のいずれか1項に記載の方法。
- 請求項1〜13のいずれか1項に記載の方法に従って基板上に組み立てられた部品を有することを特徴とする、電気製品または電子製品。
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007018431A1 (de) * | 2007-04-19 | 2008-10-30 | Evonik Degussa Gmbh | Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor |
DE102008058040A1 (de) * | 2008-11-18 | 2010-05-27 | Evonik Degussa Gmbh | Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten |
DE102009009338A1 (de) | 2009-02-17 | 2010-08-26 | Evonik Degussa Gmbh | Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
DE102009009337A1 (de) | 2009-02-17 | 2010-08-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung |
DE102009028802B3 (de) | 2009-08-21 | 2011-03-24 | Evonik Degussa Gmbh | Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung |
DE102009028801B3 (de) | 2009-08-21 | 2011-04-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung |
DE102009054998A1 (de) | 2009-12-18 | 2011-06-22 | Evonik Degussa GmbH, 45128 | Verfahren zur Herstellung von Indiumchlordialkoxiden |
DE102009054997B3 (de) | 2009-12-18 | 2011-06-01 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
DE102010031895A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
DE102010043668B4 (de) | 2010-11-10 | 2012-06-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
TWI559331B (zh) * | 2012-05-04 | 2016-11-21 | 宇亮光電股份有限公司 | 一種用於形成可撓式透明導電膜之導電材料 |
DE102014202718A1 (de) | 2014-02-14 | 2015-08-20 | Evonik Degussa Gmbh | Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung |
CN111943132B (zh) * | 2020-08-18 | 2024-02-23 | 中国科学技术大学 | 碎片样品的平面扩展方法以及平面扩展的碎片样品 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04262590A (ja) * | 1991-02-16 | 1992-09-17 | Ricoh Co Ltd | フレキシブル配線板 |
JP2001087953A (ja) * | 1999-09-14 | 2001-04-03 | Tokyo Inst Of Technol | 液体の表面張力を利用した部品の位置合わせ方法 |
WO2005027601A1 (ja) * | 2003-09-11 | 2005-03-24 | Taiyo Ink Mfg. Co., Ltd. | 絶縁パターン及びその形成方法 |
JP2006253218A (ja) * | 2005-03-08 | 2006-09-21 | Tdk Corp | 光学半導体装置及び製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3869787A (en) * | 1973-01-02 | 1975-03-11 | Honeywell Inf Systems | Method for precisely aligning circuit devices coarsely positioned on a substrate |
US4199649A (en) * | 1978-04-12 | 1980-04-22 | Bard Laboratories, Inc. | Amorphous monomolecular surface coatings |
US5355577A (en) | 1992-06-23 | 1994-10-18 | Cohn Michael B | Method and apparatus for the assembly of microfabricated devices |
JP3193866B2 (ja) * | 1995-02-28 | 2001-07-30 | 信越化学工業株式会社 | 無溶剤の実装回路板保護被膜用光硬化型シリコーン樹脂組成物、及びそれを用いた実装回路板の保護方法 |
US6507989B1 (en) | 1997-03-13 | 2003-01-21 | President And Fellows Of Harvard College | Self-assembly of mesoscale objects |
US6623579B1 (en) | 1999-11-02 | 2003-09-23 | Alien Technology Corporation | Methods and apparatus for fluidic self assembly |
DE10007942A1 (de) | 2000-02-22 | 2001-09-06 | Lohmann Therapie Syst Lts | Verpackung für wirkstoffhaltige Pflaster |
AU2003230860A1 (en) * | 2002-04-10 | 2003-10-27 | President And Fellows Of Harvard College | Method of self-assembly and self-assembled structures |
US6924551B2 (en) * | 2003-05-28 | 2005-08-02 | Intel Corporation | Through silicon via, folded flex microelectronic package |
CN101310373B (zh) * | 2005-09-29 | 2012-01-25 | 松下电器产业株式会社 | 电子电路构成部件的装配方法 |
DE102008006221A1 (de) * | 2007-01-25 | 2008-07-31 | GeSIM Gesellschaft für Silizium-Mikrosysteme mbH | Verfahren und Vorrichtung zum gerichteten Transport von Chips auf eine Zielposition |
US7993940B2 (en) * | 2007-12-05 | 2011-08-09 | Luminus Devices, Inc. | Component attach methods and related device structures |
FR2929864B1 (fr) * | 2008-04-09 | 2020-02-07 | Commissariat A L'energie Atomique | Auto-assemblage de puces sur un substrat |
-
2009
- 2009-10-26 DE DE102009050703A patent/DE102009050703B3/de not_active Expired - Fee Related
-
2010
- 2010-10-05 KR KR1020127010601A patent/KR20120105431A/ko not_active Application Discontinuation
- 2010-10-05 CN CN201080048372.1A patent/CN102741991B/zh not_active Expired - Fee Related
- 2010-10-05 EP EP10763177A patent/EP2471091A2/de not_active Withdrawn
- 2010-10-05 US US13/503,789 patent/US20120213980A1/en not_active Abandoned
- 2010-10-05 CA CA2778209A patent/CA2778209A1/en not_active Abandoned
- 2010-10-05 WO PCT/EP2010/064782 patent/WO2011054611A2/de active Application Filing
- 2010-10-05 JP JP2012534612A patent/JP2013508958A/ja active Pending
- 2010-10-22 TW TW099136135A patent/TWI538067B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04262590A (ja) * | 1991-02-16 | 1992-09-17 | Ricoh Co Ltd | フレキシブル配線板 |
JP2001087953A (ja) * | 1999-09-14 | 2001-04-03 | Tokyo Inst Of Technol | 液体の表面張力を利用した部品の位置合わせ方法 |
WO2005027601A1 (ja) * | 2003-09-11 | 2005-03-24 | Taiyo Ink Mfg. Co., Ltd. | 絶縁パターン及びその形成方法 |
JP2006253218A (ja) * | 2005-03-08 | 2006-09-21 | Tdk Corp | 光学半導体装置及び製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201131671A (en) | 2011-09-16 |
CN102741991A (zh) | 2012-10-17 |
EP2471091A2 (de) | 2012-07-04 |
DE102009050703B3 (de) | 2011-04-21 |
KR20120105431A (ko) | 2012-09-25 |
WO2011054611A2 (de) | 2011-05-12 |
US20120213980A1 (en) | 2012-08-23 |
CN102741991B (zh) | 2016-03-23 |
CA2778209A1 (en) | 2011-05-12 |
TWI538067B (zh) | 2016-06-11 |
WO2011054611A3 (de) | 2011-10-13 |
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