JP2013506977A - 電子デバイスたとえば光学デバイスまたはオプトエレクトロニクスデバイスおよび該デバイスの製造方法 - Google Patents
電子デバイスたとえば光学デバイスまたはオプトエレクトロニクスデバイスおよび該デバイスの製造方法 Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacturing Of Micro-Capsules (AREA)
Abstract
Description
Claims (15)
- 電子デバイスたとえば光学デバイスまたはオプトエレクトロニクスデバイスにおいて、
熱可塑性樹脂(5)を含む部材(6)が設けられており、
前記熱可塑性樹脂(5)は、コア(2)とシェル(3)を有する粒子(1)を含んでおり、
前記シェル(3)は前記コア(2)の表面に設けられており、
前記コア(2)はアルミニウムを含む
ことを特徴とする電子デバイス。 - 前記シェル(3)は前記コア(2)の表面にじかに設けられている、請求項1記載のデバイス。
- 前記シェル(3)は酸化物、窒化物または酸窒化物を含む、請求項1または2記載のデバイス。
- 前記シェル(3)は10nmよりも大きい厚さを有する、請求項1から3のいずれか1項記載のデバイス。
- 前記シェル(3)は100μmよりも小さい厚さを有する、請求項1から4のいずれか1項記載のデバイス。
- 前記シェル(3)は前記コア(2)を電気的に絶縁する、請求項1から5のいずれか1項記載のデバイス。
- 前記シェル(3)は、該シェルの表面にコーティング(4)を有する、請求項1から6のいずれか1項記載のデバイス。
- 前記粒子(1)は、d50値としての測定において、10nm〜50μmの平均粒子サイズを有する、請求項1から7のいずれか1項記載のデバイス。
- 前記熱可塑性樹脂(5)に対する前記粒子(1)の濃度は、0.001〜5質量%である、請求項1から8のいずれか1項記載のデバイス。
- 前記コア(2)は、少なくとも99モル%のアルミニウム含有量を有する、請求項1から9のいずれか1項記載のデバイス。
- 前記コア(2)はアルミニウム合金を含む、請求項1から10のいずれか1項記載のデバイス。
- 前記部材(6)はケーシングである、請求項1から11のいずれか1項記載のデバイス。
- 電子デバイスたとえば光学デバイスまたはオプトエレクトロニクスデバイスのための部材(6)の製造方法において、
A)熱可塑性樹脂(5)を用意するステップと、
B)アルミニウムを含むコア(2)と、該コア(2)の表面に設けられたシェル(3)を含む粒子(1)を含入するステップと、
C)部材(6)を成形するステップと
を有することを特徴とする方法。 - 前記ステップB)の粒子(1)は、事前に実施される方法において製造され、該方法は、
a)アルミニウムを溶解するステップと、
b)コア(2)を形成するために、前記ステップa)により得られた溶解物を噴霧するステップと、
c)前記ステップb)により得られたコア(2)を粉砕するステップと、
d)該コア(2)の表面にシェル(3)を形成するために、前記ステップc)により得られたコア(2)をコンディショニングするステップと
を有することを特徴とする、
請求項13記載の方法。 - 前記粒子(1)は、前記ステップB)の前であり前記ステップd)の後、ステップe)において乾燥させる、請求項14記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009047877 | 2009-09-30 | ||
DE102009047877.9 | 2009-09-30 | ||
DE102009055765.2 | 2009-11-25 | ||
DE102009055765A DE102009055765A1 (de) | 2009-09-30 | 2009-11-25 | Optisches oder optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
PCT/EP2010/063813 WO2011039071A2 (de) | 2009-09-30 | 2010-09-20 | Elektronisches, insbesondere optisches oder optoelektronisches, bauelement und verfahren zu dessen herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013506977A true JP2013506977A (ja) | 2013-02-28 |
JP2013506977A5 JP2013506977A5 (ja) | 2013-07-11 |
Family
ID=43662662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012531324A Pending JP2013506977A (ja) | 2009-09-30 | 2010-09-20 | 電子デバイスたとえば光学デバイスまたはオプトエレクトロニクスデバイスおよび該デバイスの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20120241694A1 (ja) |
EP (1) | EP2483938A2 (ja) |
JP (1) | JP2013506977A (ja) |
KR (1) | KR20120091175A (ja) |
CN (1) | CN102549784A (ja) |
DE (1) | DE102009055765A1 (ja) |
WO (1) | WO2011039071A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020107910A (ja) * | 2020-04-01 | 2020-07-09 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US11430928B2 (en) | 2016-05-31 | 2022-08-30 | Nichia Corporation | Light-emitting device with exposed filter particles |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017210200A1 (de) * | 2017-06-19 | 2018-12-20 | Osram Gmbh | Substrat zum aufnehmen eines optoelektronischen bauelements, optoelektronische baugruppe, verfahren zum herstellen eines substrats und verfahren zum herstellen einer optoelektronischen baugruppe |
Citations (2)
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JP2006036931A (ja) * | 2004-07-27 | 2006-02-09 | Three M Innovative Properties Co | 熱伝導性組成物 |
JP2009135484A (ja) * | 2007-11-09 | 2009-06-18 | Hitachi Chem Co Ltd | 光半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS52149282A (en) * | 1976-06-08 | 1977-12-12 | Asahi Chem Ind Co Ltd | Aq. aluminium paste compositions |
JPH0493362A (ja) * | 1990-08-10 | 1992-03-26 | Toshiba Ceramics Co Ltd | 電子部品封止用充填剤およびその製造方法 |
US5627107A (en) * | 1992-06-08 | 1997-05-06 | The Dow Chemical Company | Semiconductor devices encapsulated with aluminum nitride-filled resins and process for preparing same |
DE69514201T2 (de) * | 1994-11-24 | 2000-08-03 | Dow Corning Toray Silicone | Verfahren zur Herstellung eines Halbleiterbauelements |
US5601874A (en) * | 1994-12-08 | 1997-02-11 | The Dow Chemical Company | Method of making moisture resistant aluminum nitride powder and powder produced thereby |
EP0798393B1 (en) * | 1996-03-29 | 2001-11-21 | Hitachi Metals, Ltd. | Method of producing aluminum composite material of low-thermal expansion and high-thermal conductivity |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
DE10310844B4 (de) * | 2003-03-10 | 2021-06-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement mit einem Gehäusekörper aus Kunststoff |
WO2005101489A2 (de) * | 2004-04-16 | 2005-10-27 | Lucea Ag | Gehäuse für led-chip und lichtquelle |
DE102004064150B4 (de) * | 2004-06-29 | 2010-04-29 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil mit Gehäuse mit leitfähiger Beschichtung zum ESD-Schutz |
JP4991173B2 (ja) * | 2005-04-27 | 2012-08-01 | 京セラ株式会社 | 発光素子搭載用基体ならびにこれを用いた発光装置 |
JP2009263640A (ja) * | 2008-04-04 | 2009-11-12 | Sumitomo Chemical Co Ltd | 熱伝導性樹脂組成物及びその用途 |
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2009
- 2009-11-25 DE DE102009055765A patent/DE102009055765A1/de not_active Withdrawn
-
2010
- 2010-09-20 WO PCT/EP2010/063813 patent/WO2011039071A2/de active Application Filing
- 2010-09-20 CN CN2010800439894A patent/CN102549784A/zh active Pending
- 2010-09-20 EP EP10759851A patent/EP2483938A2/de not_active Withdrawn
- 2010-09-20 JP JP2012531324A patent/JP2013506977A/ja active Pending
- 2010-09-20 US US13/499,632 patent/US20120241694A1/en not_active Abandoned
- 2010-09-20 KR KR1020127011312A patent/KR20120091175A/ko not_active Application Discontinuation
Patent Citations (2)
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JP2006036931A (ja) * | 2004-07-27 | 2006-02-09 | Three M Innovative Properties Co | 熱伝導性組成物 |
JP2009135484A (ja) * | 2007-11-09 | 2009-06-18 | Hitachi Chem Co Ltd | 光半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11430928B2 (en) | 2016-05-31 | 2022-08-30 | Nichia Corporation | Light-emitting device with exposed filter particles |
JP2020107910A (ja) * | 2020-04-01 | 2020-07-09 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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WO2011039071A3 (de) | 2011-08-25 |
EP2483938A2 (de) | 2012-08-08 |
KR20120091175A (ko) | 2012-08-17 |
DE102009055765A1 (de) | 2011-03-31 |
CN102549784A (zh) | 2012-07-04 |
US20120241694A1 (en) | 2012-09-27 |
WO2011039071A2 (de) | 2011-04-07 |
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