JP2013504694A - シャワーヘッド洗浄方法及び装置 - Google Patents
シャワーヘッド洗浄方法及び装置 Download PDFInfo
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- JP2013504694A JP2013504694A JP2012529843A JP2012529843A JP2013504694A JP 2013504694 A JP2013504694 A JP 2013504694A JP 2012529843 A JP2012529843 A JP 2012529843A JP 2012529843 A JP2012529843 A JP 2012529843A JP 2013504694 A JP2013504694 A JP 2013504694A
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- Prior art keywords
- cleaning
- tank
- cleaning liquid
- assembly
- liquid supply
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67724—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations by means of a cart or a vehicule
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【選択図】 図1
Description
Claims (14)
- 洗浄化学物質で構成部品を洗浄するためのシステムであって、
洗浄プロセス中洗浄すべき1つ又はそれ以上の構成部品を保持するための洗浄槽組立体を含むウェットベンチ装置と、
洗浄プロセス中1つ又はそれ以上の洗浄化学物質を洗浄槽組立体に供給するための、洗浄槽組立体と着脱可能に連結された着脱可能な洗浄カートと、を含むシステム。 - 構成部品はシャワーヘッドである請求項1に記載のシステム。
- ウェットベンチ装置は、
洗浄槽組立体を保持し、且つ、プロセス中洗浄槽組立体から溢れる液体を捕らえるための溢れ槽を形成するフレームと、
洗浄中に溢れ槽によって捕らえられた液体を除去するための排液管路とを更に含む、請求項1に記載のシステム。 - 洗浄槽組立体は、
洗浄すべき第1構成部品を支持するための第1洗浄槽と、
第1洗浄槽の下に配置されたトランスデューサと、
洗浄すべき構成部品を支持するための洗浄槽内に配置された支持体とを含む、請求項1に記載のシステム。 - 洗浄槽組立体は、
洗浄すべき第2構成部品を支持するための第2洗浄槽を更に含む、請求項4に記載のシステム。 - 着脱可能な洗浄カートは、
洗浄プロセスを制御するためのシステムコントローラと、
洗浄液を洗浄槽組立体に供給してリサイクルするための洗浄液供給モジュールとを含む、請求項4に記載のシステム。 - 洗浄液供給モジュールは、
洗浄プロセス中パージガスとして使用される不活性ガスを供給するための不活性ガスモジュールと、
洗浄工程中脱イオン(DI)水供給を供給するための脱イオン水供給モジュールと、
洗浄液を第1洗浄層に供給するための第1洗浄液供給タンクと、を含む、請求項6に記載のシステム。 - 洗浄液供給モジュールは、
洗浄液を第2洗浄槽に供給するための第2洗浄液供給タンクを含む、請求項7に記載のシステム。 - フォトマグネヘリックメータ、着脱可能な洗浄カート内の漏れを検出するための漏れ警報器、洗浄システム全体を制御するためのプログラム可能ロジックコントローラ、及びインライン熱コントローラの少なくとも1つを含む請求項6に記載のシステム。
- 洗浄化学物質で構成部品を洗浄するための方法であって、
洗浄プロセス中洗浄すべき1つ又はそれ以上の構成部品を保持するための洗浄槽組立体を提供するステップを含み、
洗浄槽組立体は、
外側洗浄槽と、
外側洗浄槽によって囲まれる第1洗浄槽と、
外側洗浄槽によって囲まれる第2洗浄槽と、
外側洗浄槽内で第1洗浄槽及び第2洗浄槽の下に配置されるトランスデューサとを含み、
更に、洗浄プロセス中1つ又はそれ以上の洗浄化学物質を洗浄槽組立体に供給するための、着脱可能に洗浄槽と連結された着脱可能な洗浄カートを提供するステップを含み、
着脱可能な洗浄カートは、
パージガスとして使用される不活性ガスを洗浄プロセス中に供給するための不活性ガスモジュールと、
脱イオン水(DI)供給モジュールと、
第1洗浄槽のための第1洗浄液供給タンクと、
第2洗浄槽のための第2洗浄液供給タンクとを含み、
更に、第1構成部品を第1洗浄槽内に配置するステップと、
第2構成部品を第2洗浄槽内に配置するステップと、
第1洗浄液を第1洗浄液供給タンクから第1洗浄槽に流入させるステップと、
第2洗浄液を第2洗浄液供給タンクから第2洗浄槽に流入させるステップと、
トランスデューサのオン及びオフを繰り返して第1洗浄液及び第2洗浄液を攪拌するステップと、
脱イオン水を脱イオン水供給モジュールから第1洗浄槽及び第2洗浄槽内に流入させて、第1洗浄液を第1洗浄槽からパージすると共に第2洗浄液を第2洗浄槽からパージするステップと、を含む方法。 - 第1洗浄液を第1洗浄液供給タンクから第1洗浄槽内に流入させることと、第2洗浄液を第2洗浄液供給タンクから第2洗浄槽に流入させることとが、同時に起こる請求項10に記載の方法。
- 第1洗浄液を第1洗浄液供給タンクから第1洗浄槽内に流入させることと、第2洗浄液を第2洗浄液供給タンクから第2洗浄槽に流入させることとが、順次起こる請求項10に記載の方法。
- 第1洗浄液と第2洗浄液は異なる化学物質である請求項10に記載の方法。
- 洗浄カートを洗浄槽から取り外すステップと、
洗浄カートを他の洗浄槽組立体に移動させるステップと、
洗浄カートを他の洗浄槽組立体に取り付けるステップとを更に含む請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24273809P | 2009-09-15 | 2009-09-15 | |
US61/242,738 | 2009-09-15 | ||
PCT/US2010/048732 WO2011034841A2 (en) | 2009-09-15 | 2010-09-14 | Method and apparatus for showerhead cleaning |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013504694A true JP2013504694A (ja) | 2013-02-07 |
JP5778156B2 JP5778156B2 (ja) | 2015-09-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012529843A Active JP5778156B2 (ja) | 2009-09-15 | 2010-09-14 | シャワーヘッド洗浄方法及び装置 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8372211B2 (ja) |
JP (1) | JP5778156B2 (ja) |
KR (1) | KR101700260B1 (ja) |
CN (1) | CN102696094B (ja) |
MY (1) | MY160167A (ja) |
SG (2) | SG179155A1 (ja) |
TW (1) | TWI533946B (ja) |
WO (1) | WO2011034841A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7498802B2 (ja) | 2020-06-10 | 2024-06-12 | アプライド マテリアルズ インコーポレイテッド | チャンバ排気洗浄用洗浄ユニット |
Families Citing this family (10)
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KR101257482B1 (ko) * | 2011-10-05 | 2013-04-24 | 주식회사 싸이노스 | 반도체 제조공정에 사용하는 샤워헤드의 세정장치 |
KR101365245B1 (ko) * | 2012-05-21 | 2014-02-19 | (주)아인스 | 샤워헤드 세척 및 포장 장치 |
US9999907B2 (en) | 2016-04-01 | 2018-06-19 | Applied Materials, Inc. | Cleaning process that precipitates yttrium oxy-flouride |
JP7021237B2 (ja) | 2017-02-09 | 2022-02-16 | アプライド マテリアルズ インコーポレイテッド | 水蒸気および酸素の反応物を利用するプラズマ軽減技術 |
TWI690430B (zh) * | 2017-08-17 | 2020-04-11 | 三緯國際立體列印科技股份有限公司 | 噴頭清潔模組 |
US20190070639A1 (en) * | 2017-09-07 | 2019-03-07 | Applied Materials, Inc. | Automatic cleaning machine for cleaning process kits |
US20210265137A1 (en) * | 2020-02-26 | 2021-08-26 | Intel Corporation | Reconditioning of reactive process chamber components for reduced surface oxidation |
TWI783407B (zh) * | 2021-03-15 | 2022-11-11 | 楊智仁 | 濕製程清洗設備及濕製程清洗方法 |
KR102642992B1 (ko) * | 2021-04-29 | 2024-03-04 | (주)펨토사이언스 | 플라즈마 생성장치 |
KR102654366B1 (ko) | 2024-03-06 | 2024-04-03 | 주식회사 디에프텍 | 반도체 제조공정에 사용되는 샤워헤드 세정 방법 |
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2010
- 2010-09-14 JP JP2012529843A patent/JP5778156B2/ja active Active
- 2010-09-14 KR KR1020127009775A patent/KR101700260B1/ko active IP Right Grant
- 2010-09-14 SG SG2012018347A patent/SG179155A1/en unknown
- 2010-09-14 MY MYPI2012001198A patent/MY160167A/en unknown
- 2010-09-14 WO PCT/US2010/048732 patent/WO2011034841A2/en active Application Filing
- 2010-09-14 US US12/881,503 patent/US8372211B2/en active Active
- 2010-09-14 CN CN201080051753.5A patent/CN102696094B/zh active Active
- 2010-09-14 SG SG10201405733WA patent/SG10201405733WA/en unknown
- 2010-09-15 TW TW099131264A patent/TWI533946B/zh active
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2013
- 2013-01-24 US US13/748,709 patent/US8714166B2/en active Active
Patent Citations (3)
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WO2000060653A1 (fr) * | 1999-03-30 | 2000-10-12 | Tokyo Electron Limited | Dispositif de traitement au plasma, procede de maintenance et procede d'installation dudit dispositif |
JP2001107244A (ja) * | 1999-10-06 | 2001-04-17 | Kanegafuchi Chem Ind Co Ltd | 半導体成膜装置の洗浄方法及び洗浄装置 |
JP2008535256A (ja) * | 2005-03-28 | 2008-08-28 | ラム リサーチ コーポレーション | ロボットを利用したプラズマ処理システムの保守装置 |
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JP7498802B2 (ja) | 2020-06-10 | 2024-06-12 | アプライド マテリアルズ インコーポレイテッド | チャンバ排気洗浄用洗浄ユニット |
Also Published As
Publication number | Publication date |
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US20110061685A1 (en) | 2011-03-17 |
WO2011034841A2 (en) | 2011-03-24 |
KR101700260B1 (ko) | 2017-01-26 |
SG179155A1 (en) | 2012-04-27 |
US20130167885A1 (en) | 2013-07-04 |
CN102696094B (zh) | 2015-03-25 |
TWI533946B (zh) | 2016-05-21 |
TW201119761A (en) | 2011-06-16 |
US8714166B2 (en) | 2014-05-06 |
WO2011034841A3 (en) | 2011-06-16 |
CN102696094A (zh) | 2012-09-26 |
SG10201405733WA (en) | 2014-11-27 |
MY160167A (en) | 2017-02-28 |
KR20120073278A (ko) | 2012-07-04 |
US8372211B2 (en) | 2013-02-12 |
JP5778156B2 (ja) | 2015-09-16 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |