JP2013504184A - 酸化亜鉛層の製造および構造化のための方法ならびに酸化亜鉛層 - Google Patents
酸化亜鉛層の製造および構造化のための方法ならびに酸化亜鉛層 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 205
- 239000011787 zinc oxide Substances 0.000 title claims description 103
- 238000000034 method Methods 0.000 title claims description 46
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 95
- 238000005530 etching Methods 0.000 claims description 91
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 29
- 239000002253 acid Substances 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 14
- 150000007513 acids Chemical class 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- 235000005985 organic acids Nutrition 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 description 19
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000000151 deposition Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 11
- 238000000149 argon plasma sintering Methods 0.000 description 10
- 238000012876 topography Methods 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000635 electron micrograph Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000013441 quality evaluation Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- -1 hydrochloric acid Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000988 reflection electron microscopy Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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Abstract
Description
1.大きな面積の基板(>0.1m2)上の酸化亜鉛層に対し、優れた光散乱特性を有する二重構造、つまりクレータの中のクレータを安価に製造することができない。二重構造は、SnO2層において光散乱を改善させるので望ましい。
2.エッチングされた酸化亜鉛層でのクレータのサイズおよび数が、スパッタリングプロセスまたは様々な液状媒体、例えば酸もしくはアルカリ液中でのエッチングプロセスによって非常に限定的にしかコントロールできない。
3.そのウィンドウ内ではエッチングプロセスにより適切な表面構造が生成される、酸化亜鉛層の製造に関してのプロセスウィンドウが狭い。特に、高い堆積速度で製造された高導電性の酸化亜鉛層は、決まってエッチング後には、低いクレータ密度しか示さない。これには、この酸化亜鉛層上で製造された光起電性ソーラーモジュールの効率が低くなるという欠点がある。
陰極スパッタリングにより、ガラス基板上に800nmの薄いZnO層を施した。以下のコーティングパラメータ、すなわちAl2O3含有率が1重量%の平たいZnO:Al2O3セラミックターゲット、13.56MHzの無線周波(rf)励起、洗浄されたCorningガラスEagle XG、プロセスガス:アルゴン、動作圧力1×10−3mbar、発電機出力2W/cm2、アルゴンガス流量2×50標準立方センチメートル(sccm)、基板温度300℃、スパッタリング装置:Von Ardenne Anlagentechnik社(VISS300)が選択された。静的堆積速度は0.5nm/sであった。
陰極スパッタリングにより、ガラス基板上に800nmの薄いZnO層を施した。コーティングパラメータは、例示的実施形態1のように選択された。酸化亜鉛をコーティングしたガラス板を、塩酸とフッ化水素酸の比率(HCl:HF)が異なる混合物中で、様々なエッチング時間でエッチングする。正確なパラメータは表1に示している。両方の酸の相互の混合比に応じ、ZnO層には異なるサイズのクレータが生じる(図3a〜cを参照)。rms粗さは、エッチング液の相対的HCl率が上昇するのに対応して少しだけ高くなる傾向にある(純粋な1重量%HFでの105nmから、両方の酸の混合物での125nmを経て、純粋な0.5重量%HClでの139nmへと)。ここでは平均クレータ直径に関する尺度である横方向の相関長は、エッチング液中での相対的HCl率が上昇するのに対応して大きくなる(HCl率0%での181nmから、HCl率100%での644nmへと)。すべてのエッチングされた層について、層除去は約150nmであった。rms粗さおよび横方向の相関長は表1に示している。
陰極スパッタリングにより、移動する基板を用いた100nm・m/min(約7nm/s)超の高い動的堆積速度で、ガラス基板上に800nmの薄い酸化亜鉛層を施した。以下のコーティングパラメータ、すなわちAl2O3含有率が0.5重量%のZnO:Al2O3円筒形セラミックターゲット、40kHzでの二重陰極の中周波(MF)励起、洗浄されたCorningガラスEagle XG、プロセスガス:アルゴン、動作圧力20×10−3mbar、発電機出力14kW、アルゴンガス流量200標準立方センチメートル(sccm)、基板温度350℃、スパッタリング装置:Von Ardenne Anlagentechnik社(VISS300)が選択された。
酸化亜鉛層を様々な濃度のHF中でエッチングした。約50〜500nmの除去が報告された。これには、例示的実施形態1で説明したようなZnO層が用いられた。
Claims (18)
- 酸化亜鉛層が、フッ化水素酸によりエッチングされることを特徴とする酸化亜鉛層の製造方法。
- 酸化亜鉛層が、少なくとも0.01N(0.02重量%)のフッ化水素酸でエッチングされる、請求項1に記載の方法。
- 酸化亜鉛層が、最高2N(4重量%)のフッ化水素酸でエッチングされる、請求項2に記載の方法。
- 1〜300秒の間のエッチング時間を特徴とする請求項1〜3のいずれか一つに記載の方法。
- 酸化亜鉛層が、フッ化水素酸とさらなる酸、特に塩酸とから成る混合物でエッチングされることを特徴とする請求項1〜4のいずれか一つに記載の方法。
- 酸化亜鉛層が、少なくとも1つのさらなるエッチングステップによりエッチングされることを特徴とする請求項1〜5のいずれか一つに記載の方法。
- 酸化亜鉛層が、フッ化水素酸でのエッチングステップの前に、他の酸、特に塩酸、リン酸、硫酸、硝酸、酢酸、またはクエン酸で、またはその他の、場合によっては有機酸でエッチングされることを特徴とする請求項1〜6のいずれか一つに記載の方法。
- 濃度の異なるフッ化水素酸中での2つのエッチングステップを特徴とする請求項1〜7のいずれか一つに記載の方法。
- 酸化亜鉛層が、フッ化水素酸でのエッチングステップの後に、他の酸、特に塩酸、リン酸、硫酸、硝酸、酢酸、またはクエン酸で、またはその他の、場合によっては有機酸でエッチングされることを特徴とする請求項1〜8のいずれか一つに記載の方法。
- 10−2Ω・cm未満の固有抵抗を有する酸化亜鉛層がエッチングされることを特徴とする請求項1〜9のいずれか一つに記載の方法。
- 少なくとも5nm/sの静的堆積速度で基板上に堆積された酸化亜鉛層がエッチングされる、請求項10に記載の方法。
- 大きなクレータの中に小さなクレータがエッチングされた二重構造を有する酸化亜鉛層。
- 大きなクレータが、直径300nm超の大きさであることを特徴とする請求項12に記載の酸化亜鉛層。
- 小さなクレータが、直径300nm未満の大きさであることを特徴とする請求項1〜13のいずれか一つに記載の酸化亜鉛層。
- 大きなクレータのクレータ密度0.3〜3μm−2を特徴とする請求項1〜14のいずれか一つに記載の酸化亜鉛層。
- 小さなクレータのクレータ密度5〜100μm−2を特徴とする請求項1〜15のいずれか一つに記載の酸化亜鉛層。
- 請求項12〜16のいずれか一つに記載の酸化亜鉛層を少なくとも1つ含む、基板を有する層構造。
- 請求項12〜16のいずれか一つに記載の酸化亜鉛層を含む太陽電池。
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DE102009039777.9 | 2009-09-02 | ||
DE102009039777A DE102009039777A1 (de) | 2009-09-02 | 2009-09-02 | Verfahren zur Herstellung und Strukturierung einer Zinkoxidschicht und Zinkoxidschicht |
PCT/DE2010/000943 WO2011026455A1 (de) | 2009-09-02 | 2010-08-07 | Verfahren zur herstellung und strukturierung einer zinkoxidschicht und zinkoxidschicht |
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JP5966483B2 (ja) * | 2012-03-22 | 2016-08-10 | 東ソー株式会社 | 酸化物透明導電膜及びその製造方法、それにより得られる素子、並びに太陽電池 |
JP2014031565A (ja) * | 2012-08-06 | 2014-02-20 | Kochi Univ Of Technology | 酸化亜鉛を主成分とする膜構造体及びその製造方法、並びに該膜構造体からなる感受素子 |
WO2014029063A1 (zh) * | 2012-08-20 | 2014-02-27 | 新奥光伏能源有限公司 | 优化ZnO基透明导电膜表面性能的方法及获得的产品 |
CN102931244A (zh) * | 2012-11-23 | 2013-02-13 | 南开大学 | 一种高绒度反射的导电白色背反射电极及其制备方法 |
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US6068755A (en) * | 1996-12-06 | 2000-05-30 | Canon Kabushiki Kaisha | Process for forming zinc oxide film and processes for producing semiconductor device plate and photo-electricity generating device using the film |
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JP3327811B2 (ja) * | 1997-05-13 | 2002-09-24 | キヤノン株式会社 | 酸化亜鉛薄膜の製造方法、それを用いた光起電力素子及び半導体素子基板の製造方法 |
US6951689B1 (en) * | 1998-01-21 | 2005-10-04 | Canon Kabushiki Kaisha | Substrate with transparent conductive layer, and photovoltaic element |
EP1199755A4 (en) * | 1999-07-26 | 2004-10-20 | Nat Inst Of Advanced Ind Scien | ZNO COMPOSITE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS PRODUCTION METHOD |
JP2003068643A (ja) * | 2001-08-23 | 2003-03-07 | Japan Advanced Inst Of Science & Technology Hokuriku | 結晶性シリコン膜の作製方法及び太陽電池 |
AU2002360361A1 (en) * | 2001-11-09 | 2003-06-10 | Biomicroarrays, Inc. | High surface area substrates for microarrays and methods to make same |
JP4248793B2 (ja) * | 2002-02-15 | 2009-04-02 | 独立行政法人産業技術総合研究所 | 薄膜太陽電池の製造方法 |
US6936851B2 (en) * | 2003-03-21 | 2005-08-30 | Tien Yang Wang | Semiconductor light-emitting device and method for manufacturing the same |
DE102004003760B4 (de) | 2004-01-23 | 2014-05-22 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer leitfähigen und transparenten Zinkoxidschicht und Verwendung derselben in einer Dünnschichtsolarzelle |
US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
KR101117948B1 (ko) * | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
US7235736B1 (en) | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
JP5406717B2 (ja) * | 2006-09-08 | 2014-02-05 | ピルキントン グループ リミテッド | 酸化亜鉛被覆物品を製造するための低温法 |
JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
US8003883B2 (en) * | 2007-01-11 | 2011-08-23 | General Electric Company | Nanowall solar cells and optoelectronic devices |
CN101246921A (zh) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | 增加透明导电氧化物光散射能力的方法 |
KR101402189B1 (ko) * | 2007-06-22 | 2014-06-02 | 삼성전자주식회사 | Zn 산화물계 박막 트랜지스터 및 Zn 산화물의 식각용액 |
JP2009029688A (ja) * | 2007-06-28 | 2009-02-12 | Rohm Co Ltd | ZnO系基板及びZnO系基板の処理方法 |
WO2009041659A1 (ja) * | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | 太陽電池 |
US20090194157A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
GB0803702D0 (en) * | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
KR20090098244A (ko) * | 2008-03-13 | 2009-09-17 | 삼성전자주식회사 | 광전소자의 제조 방법 |
US20100163526A1 (en) * | 2008-06-27 | 2010-07-01 | Nano Terra Inc. | Patterning Processes Comprising Amplified Patterns |
EP2190024A1 (fr) * | 2008-11-19 | 2010-05-26 | Université de Neuchâtel | Dispositif photoélectrique a jonctions multiples et son procédé de realisation |
KR101206250B1 (ko) * | 2009-10-13 | 2012-11-28 | 주식회사 엘지화학 | 식각 마스크 패턴 형성용 페이스트 및 이의 스크린 인쇄법을 이용한 실리콘 태양전지의 제조방법 |
TW201118946A (en) * | 2009-11-24 | 2011-06-01 | Chun-Yen Chang | Method for manufacturing free-standing substrate and free-standing light-emitting device |
US20110126890A1 (en) * | 2009-11-30 | 2011-06-02 | Nicholas Francis Borrelli | Textured superstrates for photovoltaics |
WO2011143327A2 (en) * | 2010-05-11 | 2011-11-17 | Molecular Imprints, Inc. | Nanostructured solar cell |
US9112086B2 (en) * | 2011-11-10 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
-
2009
- 2009-09-02 DE DE102009039777A patent/DE102009039777A1/de not_active Withdrawn
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2010
- 2010-08-07 US US13/390,391 patent/US8894867B2/en not_active Expired - Fee Related
- 2010-08-07 CN CN201080039156.0A patent/CN102687287B/zh not_active Expired - Fee Related
- 2010-08-07 JP JP2012527197A patent/JP5469248B2/ja not_active Expired - Fee Related
- 2010-08-07 WO PCT/DE2010/000943 patent/WO2011026455A1/de active Application Filing
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WO2011026455A1 (de) | 2011-03-10 |
CN102687287A (zh) | 2012-09-19 |
JP5469248B2 (ja) | 2014-04-16 |
US8894867B2 (en) | 2014-11-25 |
DE102009039777A1 (de) | 2011-03-03 |
CN102687287B (zh) | 2015-06-17 |
EP2474046A1 (de) | 2012-07-11 |
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US20120190209A1 (en) | 2012-07-26 |
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