JP2013501227A - 走査型プローブ用の金属探針およびその製造方法 - Google Patents
走査型プローブ用の金属探針およびその製造方法 Download PDFInfo
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- 239000000523 sample Substances 0.000 title claims abstract description 170
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 50
- 239000002184 metal Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000004323 axial length Effects 0.000 claims abstract description 17
- 239000003792 electrolyte Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 25
- 239000003085 diluting agent Substances 0.000 claims description 10
- 238000007865 diluting Methods 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 46
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 19
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000866 electrolytic etching Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910000575 Ir alloy Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical class [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/10—Shape or taper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q10/00—Scanning or positioning arrangements, i.e. arrangements for actively controlling the movement or position of the probe
- G01Q10/04—Fine scanning or positioning
- G01Q10/045—Self-actuating probes, i.e. wherein the actuating means for driving are part of the probe itself, e.g. piezoelectric means on a cantilever probe
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q10/00—Scanning or positioning arrangements, i.e. arrangements for actively controlling the movement or position of the probe
- G01Q10/04—Fine scanning or positioning
- G01Q10/06—Circuits or algorithms therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/16—Probe manufacture
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
【選択図】図1
Description
1.ワイヤを電解質中に浸すステップであって、規定の長さを電解質中に浸すステップ。
2.DC電圧を印加し、流れる電流を監視するステップ。
3.測定される電流が途切れるまでエッチング加工するステップ。
4.DC電圧を切断するステップ。
5.タングステンワイヤを規定の長さだけ前送りするステップ。
6.望まれる個数の探針が製造されるまで、または金属ワイヤが使い尽くされるまでステップ2〜5を繰り返すステップ。
B 尖った区域
1 探針
3 長手方向軸
5 最大半径方向幅の区域
7 丸みのある端部
9 原子レベルで鋭利な端部
11 容器
13 電解質
15 電極
17 金属ワイヤ
19 電解質中に浸漬されているワイヤ部分
21 表面
23 狭窄部
25 電流計
27 制御デバイス
29 スイッチ
31 センサ
33 水晶ロッド
35 フレーム
37A 金コーティング
37B 金コーティング
39 試料表面
l 軸方向長さ
d 最大半径方向幅
Claims (15)
- 走査型プローブ用の金属探針(1)であって、軸方向長さ(l)と、半径方向幅(d)と、最大半径方向幅の区域(5)から原子レベルで鋭利な端部(9)まで軸方向に延びる尖った区域(B)と、最大半径方向幅の区域(5)から丸みのある端部(7)まで軸方向に延びる丸みのある区域(A)とを有し、前記尖った区域(B)の軸方向長さが、前記丸みのある区域(A)の軸方向長さよりも大きく、前記金属探針(1)が10μg以下の質量を有する金属探針(1)。
- 前記最大軸方向長さ(l)が500μm以下である請求項1に記載の金属探針(1)。
- 前記最大半径方向幅(d)が50μm以下である請求項1または2に記載の金属探針(1)。
- 周期表の第4〜6周期の第6〜11族に含まれる材料から選択される金属、または主成分として前記金属の少なくとも1つを含む合金からなる請求項1から3のいずれか一項に記載の金属探針(1)。
- 走査型プローブ用の探針としての請求項1から4のいずれか一項に記載の金属探針(1)の使用。
- 請求項1から4のいずれか一項に記載の金属探針(1)を備えることを特徴とする走査型プローブ顕微鏡センサ(31)。
- 第1の振動子アーム(33A)と、前記探針(1)が固定された第2の振動子アーム(33B)とを備える対称形振動子(33)を備えることを特徴とする請求項6に記載の走査型プローブ顕微鏡センサ(31)。
- 走査型プローブ用の金属探針(1)を製造する方法であって、
第1の電極(15)が浸漬された電解質(13)を提供するステップと、
第2の電極としてワイヤ(17)を前記電解質(13)中に部分的に浸漬するステップと、
前記電解質(13)中に浸漬されているワイヤ(17)の部分(19)が滴下するまで、前記第1の電極(15)と前記ワイヤ(17)の間に電圧を印加するステップと、
走査型プローブ用の金属探針(1)として使用するために、前記滴下された部分(19)を洗浄して前記電解質を除去するステップとを含み、
前記ワイヤ(17)が、600μm以下の量だけ前記電解質中に部分的に浸漬されることを特徴とする方法。 - 前記電極(13)中に先に浸漬された前記金属ワイヤ(17)の部分(19)が滴下した後、前記金属ワイヤ(17)の次の部分を前記電解質(13)中に浸漬するために前記金属ワイヤ(17)が前送りされ、前記第1の電極(15)と前記ワイヤ(17)の間の電圧が、前記ワイヤ(17)の前記次の部分が滴下するまで再び印加されることを特徴とする請求項8に記載の方法。
- 前記洗浄するステップが、前記金属ワイヤ(17)の複数の部分が滴下された後に行われることを特徴とする請求項9に記載の方法。
- 前記洗浄するステップが、前記電解質(13)を溶解する希釈剤によって前記電解質(13)を希釈することによって行われることを特徴とする請求項8から10のいずれか一項に記載の方法。
- 前記電解質(13)を希釈するステップが、ある量の電解質(13)を同量の希釈剤によって置換することによって行われることを特徴とする請求項11に記載の方法。
- 前記電解質(13)を希釈するステップが少なくとも1回繰り返されることを特徴とする請求項11または12に記載の方法。
- 前記電解質(13)中に浸漬されている前記ワイヤ(17)の部分(19)の滴下が、前記ワイヤ(17)を通って流れる電流を監視することによって監視されることを特徴とする請求項8から13のいずれか一項に記載の方法。
- 前記ワイヤ(17)が直径100μm以下であることを特徴とする請求項8から14のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09075351.8A EP2282217B1 (en) | 2009-08-07 | 2009-08-07 | Metal tip for scanning probe applications and method of producing the same |
EP09075351.8 | 2009-08-07 | ||
PCT/EP2010/004915 WO2011015378A1 (en) | 2009-08-07 | 2010-08-02 | Metal tip for scanning probe applications and method of producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013501227A true JP2013501227A (ja) | 2013-01-10 |
JP5849049B2 JP5849049B2 (ja) | 2016-01-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012523249A Expired - Fee Related JP5849049B2 (ja) | 2009-08-07 | 2010-08-02 | 走査型プローブ用の金属探針およびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8661561B2 (ja) |
EP (1) | EP2282217B1 (ja) |
JP (1) | JP5849049B2 (ja) |
CN (1) | CN102483429B (ja) |
RU (1) | RU2550759C2 (ja) |
WO (1) | WO2011015378A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107102174A (zh) * | 2017-05-16 | 2017-08-29 | 中国计量科学研究院 | 一种用于针尖型扫描显微测量装置的特种探针的制作方法 |
US11156636B2 (en) | 2018-09-30 | 2021-10-26 | National Institute Of Metrology, China | Scanning probe having micro-tip, method and apparatus for manufacturing the same |
CN110967525B (zh) * | 2018-09-30 | 2022-07-01 | 中国计量科学研究院 | 扫描探针 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0671519A (ja) * | 1991-10-22 | 1994-03-15 | Jeol Ltd | 先鋭チップの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5015323A (en) * | 1989-10-10 | 1991-05-14 | The United States Of America As Represented By The Secretary Of Commerce | Multi-tipped field-emission tool for nanostructure fabrication |
US5438206A (en) * | 1993-06-02 | 1995-08-01 | Matsushita Electric Industrial Co., Ltd. | Positioning device |
US5630932A (en) | 1995-09-06 | 1997-05-20 | Molecular Imaging Corporation | Tip etching system and method for etching platinum-containing wire |
US5714831A (en) * | 1995-11-13 | 1998-02-03 | Wisconsin Alumni Research Foundation | Method and apparatus for improved control of piezoelectric positioners |
EP0927331B1 (en) * | 1996-08-08 | 2004-03-31 | William Marsh Rice University | Macroscopically manipulable nanoscale devices made from nanotube assemblies |
WO2000033052A1 (en) * | 1998-12-03 | 2000-06-08 | Daiken Chemical Co., Ltd. | Electronic device surface signal control probe and method of manufacturing the probe |
US6624915B1 (en) * | 2000-03-16 | 2003-09-23 | Science Applications International Corporation | Holographic recording and micro/nanofabrication via ultrafast holographic two-photon induced photopolymerization (H-TPIP) |
KR100373185B1 (ko) * | 2000-11-28 | 2003-02-25 | 한국과학기술연구원 | 와이어 에칭장치 및 그 방법 |
JP4511544B2 (ja) * | 2003-06-11 | 2010-07-28 | アジレント・テクノロジーズ・インク | 走査型プローブ顕微鏡 |
GB0316577D0 (en) * | 2003-07-15 | 2003-08-20 | Univ Bristol | Atomic force microscope |
US7735147B2 (en) * | 2005-10-13 | 2010-06-08 | The Regents Of The University Of California | Probe system comprising an electric-field-aligned probe tip and method for fabricating the same |
US7395698B2 (en) * | 2005-10-25 | 2008-07-08 | Georgia Institute Of Technology | Three-dimensional nanoscale metrology using FIRAT probe |
KR100781036B1 (ko) * | 2005-12-31 | 2007-11-29 | 성균관대학교산학협력단 | 금속용기를 전극으로 이용한 탄소나노튜브 나노프로브 제조 장치 및 방법 |
-
2009
- 2009-08-07 EP EP09075351.8A patent/EP2282217B1/en not_active Not-in-force
-
2010
- 2010-08-02 US US13/389,295 patent/US8661561B2/en active Active
- 2010-08-02 RU RU2012103249/28A patent/RU2550759C2/ru active
- 2010-08-02 CN CN201080034638.7A patent/CN102483429B/zh not_active Expired - Fee Related
- 2010-08-02 JP JP2012523249A patent/JP5849049B2/ja not_active Expired - Fee Related
- 2010-08-02 WO PCT/EP2010/004915 patent/WO2011015378A1/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0671519A (ja) * | 1991-10-22 | 1994-03-15 | Jeol Ltd | 先鋭チップの製造方法 |
Also Published As
Publication number | Publication date |
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EP2282217B1 (en) | 2018-01-03 |
US20120174269A1 (en) | 2012-07-05 |
EP2282217A1 (en) | 2011-02-09 |
US8661561B2 (en) | 2014-02-25 |
JP5849049B2 (ja) | 2016-01-27 |
RU2550759C2 (ru) | 2015-05-10 |
CN102483429B (zh) | 2014-08-20 |
CN102483429A (zh) | 2012-05-30 |
RU2012103249A (ru) | 2013-09-20 |
WO2011015378A1 (en) | 2011-02-10 |
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