JP2013254957A5 - - Google Patents
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- Publication number
- JP2013254957A5 JP2013254957A5 JP2013118607A JP2013118607A JP2013254957A5 JP 2013254957 A5 JP2013254957 A5 JP 2013254957A5 JP 2013118607 A JP2013118607 A JP 2013118607A JP 2013118607 A JP2013118607 A JP 2013118607A JP 2013254957 A5 JP2013254957 A5 JP 2013254957A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic element
- element according
- ternary
- binary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 125000006850 spacer group Chemical group 0.000 claims 7
- 229910001325 element alloy Inorganic materials 0.000 claims 6
- 229910052703 rhodium Inorganic materials 0.000 claims 5
- 230000005415 magnetization Effects 0.000 claims 4
- 229910052771 Terbium Inorganic materials 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 229910052735 hafnium Inorganic materials 0.000 claims 3
- 229910052742 iron Inorganic materials 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 229910052720 vanadium Inorganic materials 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- 239000012528 membrane Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/491,568 | 2012-06-07 | ||
| US13/491,568 US8779538B2 (en) | 2009-08-10 | 2012-06-07 | Magnetic tunneling junction seed, capping, and spacer layer materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013254957A JP2013254957A (ja) | 2013-12-19 |
| JP2013254957A5 true JP2013254957A5 (enrdf_load_stackoverflow) | 2016-06-30 |
| JP6319954B2 JP6319954B2 (ja) | 2018-05-09 |
Family
ID=49830087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013118607A Active JP6319954B2 (ja) | 2012-06-07 | 2013-06-05 | 磁気トンネリング接合シード膜、キャッピング膜、及びスペーサー膜物質 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6319954B2 (enrdf_load_stackoverflow) |
| KR (1) | KR102130054B1 (enrdf_load_stackoverflow) |
| CN (1) | CN103490006B (enrdf_load_stackoverflow) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101266791B1 (ko) * | 2012-09-21 | 2013-05-27 | 고려대학교 산학협력단 | 면내 전류와 전기장을 이용한 자기메모리 소자 |
| US10026888B2 (en) * | 2014-08-06 | 2018-07-17 | Toshiba Memory Corporation | Magnetoresistive effect element and magnetic memory |
| US9349945B2 (en) * | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| US10573363B2 (en) | 2015-12-02 | 2020-02-25 | Samsung Electronics Co., Ltd. | Method and apparatus for performing self-referenced read in a magnetoresistive random access memory |
| JP6495980B2 (ja) * | 2017-08-08 | 2019-04-03 | 株式会社東芝 | 磁気メモリ |
| US10553642B2 (en) * | 2017-08-28 | 2020-02-04 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic junctions utilizing metal oxide layer(s) |
| US10832750B2 (en) * | 2019-02-22 | 2020-11-10 | Sandisk Technologies Llc | Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin |
| US12075629B2 (en) | 2019-03-20 | 2024-08-27 | Kioxia Corporation | Magnetic memory device with nonmagnetic layer having two additive elements |
| JP2020155565A (ja) | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置 |
| CN114503296A (zh) * | 2019-09-27 | 2022-05-13 | 华为技术有限公司 | 一种mtj单元、vcma驱动方法及mram |
| CN112736190B (zh) * | 2019-10-14 | 2023-04-18 | 上海磁宇信息科技有限公司 | 磁性隧道结结构及磁性随机存储器 |
| TWI704557B (zh) * | 2019-12-24 | 2020-09-11 | 大陸商珠海南北極科技有限公司 | 單次可程式化位元之形成方法 |
| JP2022049406A (ja) | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 磁気記憶装置 |
| KR20220125050A (ko) * | 2021-03-04 | 2022-09-14 | 삼성전자주식회사 | 자기터널접합 소자, 자기터널접합 소자를 포함하는 메모리 장치, 및 자기터널접합 소자의 제조 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6992359B2 (en) * | 2004-02-26 | 2006-01-31 | Grandis, Inc. | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
| US7884403B2 (en) * | 2004-03-12 | 2011-02-08 | Japan Science And Technology Agency | Magnetic tunnel junction device and memory device including the same |
| JP2007048790A (ja) * | 2005-08-05 | 2007-02-22 | Sony Corp | 記憶素子及びメモリ |
| JP4444241B2 (ja) * | 2005-10-19 | 2010-03-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置 |
| JP4786331B2 (ja) * | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
| US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
| JP2008028362A (ja) * | 2006-06-22 | 2008-02-07 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
| US20070297220A1 (en) * | 2006-06-22 | 2007-12-27 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory |
| JP2008098523A (ja) * | 2006-10-13 | 2008-04-24 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
| US8289663B2 (en) * | 2008-04-25 | 2012-10-16 | Headway Technologies, Inc. | Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers |
| JP5703641B2 (ja) * | 2010-09-09 | 2015-04-22 | ソニー株式会社 | 記憶素子及びメモリ |
-
2013
- 2013-05-28 KR KR1020130060484A patent/KR102130054B1/ko active Active
- 2013-06-05 JP JP2013118607A patent/JP6319954B2/ja active Active
- 2013-06-07 CN CN201310225094.8A patent/CN103490006B/zh active Active
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