JP2013254957A5 - - Google Patents
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- JP2013254957A5 JP2013254957A5 JP2013118607A JP2013118607A JP2013254957A5 JP 2013254957 A5 JP2013254957 A5 JP 2013254957A5 JP 2013118607 A JP2013118607 A JP 2013118607A JP 2013118607 A JP2013118607 A JP 2013118607A JP 2013254957 A5 JP2013254957 A5 JP 2013254957A5
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- film
- magnetic element
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 8
- 229910001325 element alloy Inorganic materials 0.000 claims 6
- 229910052703 rhodium Inorganic materials 0.000 claims 5
- 230000005415 magnetization Effects 0.000 claims 4
- 229910052771 Terbium Inorganic materials 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 229910052803 cobalt Inorganic materials 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 229910052735 hafnium Inorganic materials 0.000 claims 3
- 229910052742 iron Inorganic materials 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 229910052720 vanadium Inorganic materials 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- 239000012528 membrane Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
Claims (10)
自由膜と、
前記第１基準膜及び前記自由膜の間に配置された第１非磁性スペーサー膜と、を含み、
前記第１非磁性スペーサー膜は二元、三元、又は多元合金酸化物を含み、
前記二元、三元、又は多元合金酸化物は、Ｒｕ、Ａｌ、Ｔａ、Ｔｂ、Ｃｕ、Ｖ、Ｈｆ、Ｚｒ、Ｗ、Ａｇ、Ａｕ、Ｆｅ、Ｃｏ、Ｎｉ、Ｎｂ、Ｃｒ、Ｍｏ、及びＲｈからなるグループから選択された１つ以上の追加元素を有するＭｇＯを含む半導体装置のための磁気素子。 A first reference membrane;
A free membrane,
A first nonmagnetic spacer film disposed between the first reference film and the free film,
The first nonmagnetic spacer film includes a binary, ternary, or multi-element alloy oxide;
The binary, ternary or multi-element alloy oxides are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh. A magnetic element for a semiconductor device comprising MgO having one or more additional elements selected from the group consisting of:
前記キャッピング膜は二元、三元、又は多元合金酸化物を含み、
前記キャッピング膜の前記二元、三元、又は多元合金酸化物はＲｕ、Ａｌ、Ｔａ、Ｔｂ、Ｃｕ、Ｖ、Ｈｆ、Ｚｒ、Ｗ、Ａｇ、Ａｕ、Ｆｅ、Ｃｏ、Ｎｉ、Ｎｂ、Ｃｒ、Ｍｏ、及びＲｈからなるグループから選択された１つ以上の追加元素を有するＭｇＯを含む請求項１から３の何れか一項に記載の磁気素子。 Further comprising the placed capping layer on the first reference layer,
The capping film includes a binary, ternary, or multi-element alloy oxide;
The binary, ternary or multi-element alloy oxides of the capping film are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo. 4. The magnetic element according to claim 1, comprising MgO having one or more additional elements selected from the group consisting of Rh and Rh.
前記シード膜は二元、三元、又は多元合金酸化物を含み、
前記シード膜の前記二元、三元、又は多元合金酸化物はＲｕ、Ａｌ、Ｔａ、Ｔｂ、Ｃｕ、Ｖ、Ｈｆ、Ｚｒ、Ｗ、Ａｇ、Ａｕ、Ｆｅ、Ｃｏ、Ｎｉ、Ｎｂ、Ｃｒ、Ｍｏ、及びＲｈからなるグループから選択された１つ以上の追加元素を有するＭｇＯを含む請求項１から４の何れか一項に記載の磁気素子。 A seed film disposed under the first reference film;
The seed film includes a binary, ternary, or multi-element alloy oxide;
The binary, ternary or multi-element alloy oxides of the seed film are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo. 5. The magnetic element according to claim 1, comprising MgO having one or more additional elements selected from the group consisting of Rh and Rh.
前記第２基準膜及び前記自由膜の間に配置される第２非磁性スペーサー膜と、をさらに含む請求項１から６の何れか一項に記載の磁気素子。 A second reference film disposed on an opposing surface of the free film;
The magnetic element according to any one of claims 1 to 6, further comprising a second nonmagnetic spacer film disposed between the second reference film and the free film.
前記第１基準膜は垂直磁化方向を有する請求項７又は８に記載の磁気素子。 The free film and the second reference film have an in-plane magnetization direction;
The magnetic element according to claim 7, wherein the first reference film has a perpendicular magnetization direction.
前記第１基準膜は面内磁化方向を有する請求項７から９の何れか一項に記載の磁気素子。 The free film and the second reference film have a perpendicular magnetization direction;
The magnetic element according to claim 7, wherein the first reference film has an in-plane magnetization direction.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/491,568 | 2012-06-07 | ||
| US13/491,568 US8779538B2 (en) | 2009-08-10 | 2012-06-07 | Magnetic tunneling junction seed, capping, and spacer layer materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013254957A JP2013254957A (en) | 2013-12-19 |
| JP2013254957A5 true JP2013254957A5 (en) | 2016-06-30 |
| JP6319954B2 JP6319954B2 (en) | 2018-05-09 |
Family
ID=49830087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013118607A Active JP6319954B2 (en) | 2012-06-07 | 2013-06-05 | Magnetic tunneling junction seed film, capping film, and spacer film material |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6319954B2 (en) |
| KR (1) | KR102130054B1 (en) |
| CN (1) | CN103490006B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101266791B1 (en) * | 2012-09-21 | 2013-05-27 | 고려대학교 산학협력단 | Magnetic random access memory using in-plane current and electric field |
| US10026888B2 (en) * | 2014-08-06 | 2018-07-17 | Toshiba Memory Corporation | Magnetoresistive effect element and magnetic memory |
| US9349945B2 (en) * | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| US10573363B2 (en) | 2015-12-02 | 2020-02-25 | Samsung Electronics Co., Ltd. | Method and apparatus for performing self-referenced read in a magnetoresistive random access memory |
| JP6495980B2 (en) * | 2017-08-08 | 2019-04-03 | 株式会社東芝 | Magnetic memory |
| US10553642B2 (en) * | 2017-08-28 | 2020-02-04 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic junctions utilizing metal oxide layer(s) |
| US10832750B2 (en) * | 2019-02-22 | 2020-11-10 | Sandisk Technologies Llc | Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin |
| JP2020155565A (en) | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | Magnetic memory device |
| US12075629B2 (en) | 2019-03-20 | 2024-08-27 | Kioxia Corporation | Magnetic memory device with nonmagnetic layer having two additive elements |
| CN112736190B (en) * | 2019-10-14 | 2023-04-18 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory |
| TWI704557B (en) * | 2019-12-24 | 2020-09-11 | 大陸商珠海南北極科技有限公司 | Formation method of single programmable bit |
| JP2022049406A (en) | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | Magnetic storage device |
| KR20220125050A (en) * | 2021-03-04 | 2022-09-14 | 삼성전자주식회사 | Magnetic tunneling junction device, memory device including the smae, and method of manufacturing the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6992359B2 (en) * | 2004-02-26 | 2006-01-31 | Grandis, Inc. | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
| KR100867662B1 (en) * | 2004-03-12 | 2008-11-10 | 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 | Magnetoresistive element, tunnel barrier layer and method of manufacturing the magnetoresistive element |
| JP2007048790A (en) * | 2005-08-05 | 2007-02-22 | Sony Corp | Storage element and memory |
| JP4444241B2 (en) * | 2005-10-19 | 2010-03-31 | 株式会社東芝 | Magnetoresistive element, magnetic random access memory, electronic card and electronic device |
| JP4786331B2 (en) * | 2005-12-21 | 2011-10-05 | 株式会社東芝 | Method for manufacturing magnetoresistive element |
| US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
| JP2008028362A (en) * | 2006-06-22 | 2008-02-07 | Toshiba Corp | Magnetoresistive element and magnetic memory |
| US20070297220A1 (en) * | 2006-06-22 | 2007-12-27 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory |
| JP2008098523A (en) * | 2006-10-13 | 2008-04-24 | Toshiba Corp | Magneto-resistance effect element, and magnetic memory |
| US8289663B2 (en) * | 2008-04-25 | 2012-10-16 | Headway Technologies, Inc. | Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers |
| JP5703641B2 (en) * | 2010-09-09 | 2015-04-22 | ソニー株式会社 | Memory element and memory |
-
2013
- 2013-05-28 KR KR1020130060484A patent/KR102130054B1/en active IP Right Grant
- 2013-06-05 JP JP2013118607A patent/JP6319954B2/en active Active
- 2013-06-07 CN CN201310225094.8A patent/CN103490006B/en active Active
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