JP6319954B2 - Magnetic tunneling junction seed film, capping film, and spacer film material - Google Patents

Description

  The present invention relates to a magnetic element that can be used in a magnetic device such as a magnetic memory, and an apparatus that uses the magnetic element.

  Magnetic memories, especially magnetic random access memories (MRAMs), are of increasing interest because of their potential for fast read / write speed, excellent durability, non-volatility, and low power consumption during operation. Collecting. The MRAM can store information using a magnetic substance as a storage-recording medium. One form of MRAM is a spin transfer torque random access memory (STT-RAM). The STT-RAM uses a magnetic element in which writing is performed at least in part by a current applied through the magnetic element.

  For example, FIG. 1 illustrates one exemplary magnetic tunneling junction (MTJ, 10) that can be used in a typical STT-RAM. A typical MTJ 10 is generally formed on the lower contact 11, uses a typical seed film 12, a pinning layer (14), for example, general antiferromagnetic (AFM), general A fixed film (or reference film 16), a general tunneling barrier film 18, a general free film 20, and a general capping film 22. An upper contact 24 is also shown.

  Common contacts 11 and 24 are used to apply current in a current-perpendicular-to-plane (CPP) direction or along the axis as shown in FIG. Is done. The general tunneling barrier film 18 is nonmagnetic and is a thin insulator such as MgO. A typical seed film 12 is typically used to assist in the growth of subsequent films having the desired crystal structure, such as the AFM film 14. Direct exposure of a typical free film 20 to the top contact 24 can induce irregular interfaces, dead magnetic regions and increased damping. As a result, a typical capping film 22 is provided directly on the free film 20 before the top contact 24 is deposited. Such a general cap functions as diffusion prevention and improves the quality of the surface of the general free film 20. The general fixed film 16 and the general free film 20 are magnetic materials. The magnetization 17 of a typical fixed film 16 is determined or fixed in a specific direction, typically by an exchange-bias interaction with the AFM film 14. Although illustrated as a simple (single) membrane, a typical fixed membrane 16 can include multiple membranes. For example, the general fixed film 16 may be a synthetic antiferromagnetic (SAF) including a magnetic film antiferromagnetically or ferromagnetically coupled through a thin conductive film such as Ru. . In the case of SAF, a multiple magnetic film in which a Ru thin film is inserted can be used.

  A typical free film 20 has a changeable magnetization 21. Although illustrated as a single membrane, a typical free membrane 20 can also include multiple membranes. For example, the general free film 20 may be a synthetic film including a magnetic film antiferromagnetically or ferromagnetically coupled through a thin conductive film such as Ru.

  A spin transfer torque can be used to write to a generic MTJ 10. In particular, the spin-transfer torque rotates the magnetization of the general free film 20 in one of two directions according to the easy axis. When the write current passes through the general MTJ 10 in a direction perpendicular to the plane of the layer, electrons can be spin-polarized by transmission through the general fixed film 16 or reflection from the general fixed film. . If a sufficient current is applied through the general MTJ 10, the spin transfer torque for the magnetization 21 of the general free film 20 is appropriate for switching the general free film 20. Therefore, the general free film 20 can be written in a desired state. Thus, a general MTJ 10 can be used to store information in the STT-RAM.

  One technical problem to be solved by the present invention is to provide a tunneling material having a narrow band gap.

  The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

  One embodiment in accordance with the concepts of the invention provides a magnetic element. The magnetic element includes a first reference film, a free film, and a first nonmagnetic spacer film disposed between the first reference film and the free film, and the first nonmagnetic spacer film includes two Including binary, ternary or multi-element alloy oxides, wherein the binary, ternary or multi-element alloy oxides are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe MgO having one or more additional elements selected from the group consisting of Co, Ni, Nb, Cr, Mo, and Rh.

  According to an embodiment of the present invention, the first nonmagnetic spacer film is an insulating tunneling barrier film.

  According to another embodiment of the present invention, the first nonmagnetic spacer film functions as a spin valve.

  According to another embodiment of the present invention, the magnetic element further includes a capping film disposed on the first reference film, and the capping film includes a binary, ternary, or multi-element alloy oxide, The binary, ternary or multi-element alloy oxides of the capping film are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, And MgO having one or more additional elements selected from the group consisting of Rh.

  According to another embodiment of the present invention, the magnetic element further includes a seed film disposed under the first reference film, the seed film including a binary, ternary, or multi-element alloy oxide; The binary, ternary or multi-element alloy oxides of the seed film are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo. And MgO having one or more additional elements selected from the group consisting of Rh.

  According to another embodiment of the present invention, the first nonmagnetic spacer film includes a (001) crystal structure.

  According to another embodiment of the present invention, the magnetic element includes a second reference film disposed on an opposing surface of the free film, and a second reference film disposed between the second reference film and the free film. A nonmagnetic spacer film.

  According to another embodiment of the present invention, the second nonmagnetic spacer film includes MgO.

  According to another embodiment of the present invention, the free film and the second reference film have an in-plane magnetization direction, and the first reference film has a perpendicular magnetization direction.

  According to another embodiment of the present invention, the free film and the second reference film have a perpendicular magnetization direction, and the first reference film has an in-plane magnetization direction.

  According to another embodiment of the present invention, the magnetic element further includes a capping film covering the first reference film, the free film and the second reference film have an in-plane magnetization direction, and the first reference The film has a perpendicular magnetization direction.

  According to another embodiment of the present invention, the magnetic element further includes a capping film covering the first reference film, the free film and the second reference film have an in-plane magnetization direction, and the first reference The film has a perpendicular magnetization direction.

  According to another embodiment of the present invention, the magnetic element further includes a capping film disposed on the first reference film and a seed film disposed on the second reference film. The film, the seed film, or all of these, have a crystal structure that is closely matched to an adjacent one of the first and second reference films, a binary, ternary, or multi-element alloy oxidation The capping film, the seed film, or all of these binary, ternary, or multi-element alloy oxides are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag. , MgO having one or more additional elements selected from the group consisting of Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

Another embodiment consistent with the inventive concept provides a magnetic element. The magnetic element includes a reference film, a free film, a nonmagnetic spacer film disposed between the reference film and the free film, a capping film disposed on the reference film, and a lower layer. And at least one of the nonmagnetic spacer film, the capping film, or the seed film includes MgAl ₂ O ₄ , (Mg, Ca, Sr, Ba, Mg) SnO ₃ , Mg ₂ SnO ₄ or NiMn ₂ O ₄ is included.

Other embodiments in accordance with the concepts of the invention provide a magnetic element. The magnetic element includes a reference film, a free film, and a nonmagnetic spacer film disposed between the reference film and the free film, and the nonmagnetic spacer film is a binary, ternary, or multicomponent alloy. An oxide, wherein the binary, ternary, or multi-element alloy oxide includes MgO having one or more additional elements A, where A is Ru, Al, Ta, Tb, Cu, V, Hf, Zr, Selected from the group consisting of W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh, wherein the binary alloy oxide comprises Mg _x A _y O _z , where x + y> 1 Yes, z <1.

  Other embodiments in accordance with the concepts of the invention provide a magnetic element. The magnetic element includes a free film having a magnetization direction switched in one direction in the opposite direction, a reference film, a spacer film disposed between the free film and the reference film, and the reference film or the free film. A seed film or capping film disposed adjacent to the substrate, wherein the seed film or capping film has one or more additional elements and closely matches the crystal structure of the adjacent reference film or free film A binary, ternary, or multi-element alloy oxide having a crystalline structure, wherein the one or more additional elements are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, It is selected from the group consisting of Fe, Co, Ni, Nb, Cr, Mo, and Rh.

  According to one embodiment of the present invention, the binary, ternary, or multi-component alloy oxide includes Mg, O, and one or more additional elements, and the one or more additional elements are compared to MgO. Reduce the resistance of the oxide.

  According to another embodiment of the present invention, the spacer film is a tunneling barrier film.

  According to another embodiment of the present invention, the tunneling barrier film includes a binary, ternary, or multi-element alloy oxide having a crystal structure closely matched to a crystal structure of an adjacent free film and a reference film.

  According to another embodiment of the present invention, the magnetic memory storage element provides a spin valve structure.

Other embodiments in accordance with the concepts of the invention provide a magnetic element. The magnetic element includes a reference film, a free film, a nonmagnetic spacer film disposed between the reference film and the free film, and a seed film disposed under the reference film. At least one of the magnetic spacer film or the seed film includes a binary, ternary, or multi-element alloy material, and the binary, ternary, or multi-element alloy oxide includes MgO having one or more additional elements A. And A is selected from the group consisting of Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh, The binary alloy oxide is Mg _x A _y O _z , where x + y + z = 1, x> y and 0 <x, or y, or z <1, and the ternary alloy oxide is Mg _x A _y O _z , where x + y + z = 1, x> y and 0 <x, or y or z <1, the multi-component alloy oxide is Mg _x A ¹ _y1 A ² _y2 ... An ⁿ _yn O _z , x + y1 + y2 +... + yn + z = 1, x> y1 + y2 +... + yn and 0 <x, or y1 Or y2,..., Or yn, or z <1.

Other embodiments in accordance with the concepts of the invention provide a magnetic element. The magnetic element includes a reference film, a free film, a nonmagnetic spacer film disposed between the reference film and the free film, and a capping film disposed under the reference film. At least one of the magnetic spacer film or the capping film includes a binary, ternary, or multi-element alloy material, and the binary, ternary, or multi-element alloy oxide includes one or more additional elements A. And A is selected from the group consisting of Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh, The binary alloy oxide is Mg _x A _y O _z , where x + y + z = 1, x> y and 0 <x, or y, or z <1, and the ternary alloy oxide is Mg _x A ¹ _y1 A ² _y2 Oz, where x + y + z = 1, x> y and 0 <x, or y, or z <1, and the multi-element alloy oxide is Mg _x A ¹ _y1 A ² _y2... ^An _yn O _z , and x + y1 + y2 + ... + yn + z = 1, x > Y1 + y2 + ... + yn and 0 <x, or y1, or y2, ..., or yn, or z <1.

Other embodiments in accordance with the concepts of the invention provide a magnetic element. The magnetic element is disposed under a reference film, a free film, a nonmagnetic spacer film disposed between the reference film and the free film, a capping film covering the free film, and the reference film. A seed film, and at least one of the non-magnetic spacer film, the capping film, and the seed film includes a binary, ternary, or multi-component alloy material, and the binary, ternary, or multi-component alloy. The oxide comprises MgO with one or more additional elements A, said A being Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr , Mo, and Rh, and the binary alloy oxide is Mg _x A _y O _z , where x + y + z = 1, x> y and 0 <x, or y, or z <1 And the ternary alloy oxide is Mg _x A ¹ _y1 An A ² _y2 O _z, wherein, x + y + z = 1 , x> y and 0 <x, or y, or z <1, the multi-alloy oxide is ^{_{Mg x A 1 y1 A 2 y2}} ... A n _yn O _z , x + y1 + y2 + ... + yn + z = 1, x> y1 + y2 + ... + yn and 0 <x, or y1, or y2,..., or yn, or z <1.

  One embodiment in accordance with the concepts of the present invention provides a method for programming a magnetic memory. In the method of programming the magnetic memory, the magnetic memory includes a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element and at least one selection element, and the at least one magnetic element. Can be programmed by passing a write current through the magnetic element, or by applying a voltage to the at least one magnetic element, applying a bipolar or monopolar current through the at least one magnetic element, or Applying a voltage to the at least one magnetic element, wherein the bipolar or monopolar current or voltage is sufficient to program the at least one magnetic element, and the at least one memory element comprises a reference film A free film, and a nonmagnetic spacer disposed between the reference film and the free film The non-magnetic spacer film includes a binary, ternary, or multi-element alloy oxide, and the binary, ternary, or multi-element alloy oxide includes MgO having one or more additional elements A. A is selected from the group consisting of Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

  Another embodiment consistent with the inventive concept provides a method for programming magnetic memory. In a method of programming a magnetic memory, the magnetic memory includes a plurality of magnetic storage cells, each of the plurality of magnetic storage memory cells including at least one magnetic element and at least one selection element, wherein the at least one magnetic element includes: Can be programmed by passing a write current through the magnetic element or by applying a voltage to the at least one magnetic element, not through the at least one magnetic element of a portion of the multiple magnetic storage cells; A first current is applied adjacently, the first current generates a magnetic field or additional spin torque, and a second current is applied through the at least one magnetic element or a voltage is applied. The second current or voltage, the magnetic field or the additional spin torque is Sufficient to program at least one magnetic element, the at least one memory element comprising a reference film, a free film, a nonmagnetic spacer film disposed between the reference film and the free film; The non-magnetic spacer film includes a binary, ternary, or multi-element alloy oxide, and the binary, ternary, or multi-element alloy oxide includes Ru, Al, Ta, Tb, Cu, V, Hf, MgO having one or more additional elements selected from the group consisting of Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

  According to an embodiment of the present invention, the second current is a bipolar or monopolar current.

  According to another embodiment of the present invention, applying the first current includes applying an alternating current to a conductive wiring adjacent to the at least one magnetic element.

  According to another embodiment of the present invention, the alternating current induces a spin current or a spin torque in the at least one magnetic element from a physical effect of a spin Hall effect or a Rashba effect.

  According to another embodiment of the present invention, the alternating current can lead or overlap the first current flowing through the at least one magnetic element.

  In one embodiment, after annealing, a binary alloy oxide, a ternary alloy oxide, or other multi-element alloy oxide having the same basic crystal orientation (001) as MgO. (Multi-nary alloy oxide) is provided to lower the barrier height of MgO, so it has a smaller resistance with increased thickness. For example, new oxides can be formed by providing additional elements to the oxide (eg, MgO). Additional elements reduce the resistance of the oxide. Additional elements can include, for example, one or more of the following elements: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb , Cr, Mo, and Rh. The new oxide is used as a seed film, capping film or spacer film / barrier film to increase the tunnel magnetoresistance (TMR) ratio and decrease RA of magnetic devices such as magnetic memory devices. Can be.

  Thus, the properties of the MgO film can be improved through the use of additives or additional elements. Additives can be used, for example, to increase or decrease the crystal structure to match the lattice constant. Alternatively, additives can be used to increase the effect of strain due to lattice mismatch.

  The new oxide provides a lower RA value because it has a narrower band gap or, in some instances, is conductive. A narrower band gap reduces the electrical resistance of the material for tunneling. Conductive oxides can be used, for example, to provide seed or capping films with reduced resistance. Conductivity must generally be avoided with a barrier film in a spin transfer torque MTJ structure, but a conductive spacer (insert) film can be usefully used in a spin valve structure. By utilizing new oxides with reduced RA values in seed films, capping films and barrier / spacer films, memory write current and power are reduced, read signals and speed are increased, and write and read error The potential can be greatly reduced.

A general magnetic element is illustrated. 1 illustrates a magnetic element of one embodiment. 3 is a graph illustrating switching speeds at various voltages with respect to the magnetic memory structure illustrated in FIG. 2 in two switching directions. 3 is a graph illustrating switching speeds at various voltages with respect to the magnetic memory structure illustrated in FIG. 2 in two switching directions. 3 is a graph illustrating the number of MTJ memory bits and the write current for two switching directions (P → AP, AP → P) in the structure illustrated in FIG. 2. Provided is a set of graphs illustrating the advantages of the DMTJ structure and the advantages of the DMTJ structure, one of the two barriers arranged according to the principles of the inventive concept. 1 is a schematic representation of a magnetic memory device formed with a barrier film formed of one or more new oxides in accordance with the principles of the present invention. FIG. It has both an in-plane magnetized reference film and a perpendicularly magnetized reference film, further comprising an in-plane magnetized free film, formed of one or more new materials in accordance with the principles of the present invention 1 is a schematic representative view of a magnetic memory element including a barrier film. FIG. 9 is a schematic representation of a magnetic memory element similar to FIG. 8, but further including a capping film formed of one or more new oxides in accordance with additional principles of the inventive concept. It has both a perpendicular (magnetized) reference film and an in-plane (magnetized) reference film, and a perpendicularly magnetized free film, and one or more other new ones in other embodiments of the inventive concept 1 is a schematic representative view of a magnetic memory element further having a barrier film formed of an oxide. One or more new oxidations that include both a perpendicular (magnetized) reference film and an in-plane (magnetized) reference film, and a perpendicularly magnetized free film, according to additional principles of the inventive concept It is a schematic representative figure of the magnetic memory element of other embodiment which further has the barrier film | membrane formed with the thing. FIG. 3 is a schematic representation of a magnetic memory device having a seed film formed of one or more new oxides according to other principles of the inventive concept. 1 is a schematic representation of a magnetic memory device having a capping film formed of one or more new oxides according to additional principles of the inventive concept. FIG. FIG. 3 is a schematic representation of a magnetic memory device having a capping film and a seed film formed on one or more of one or more new oxides according to other principles of the inventive concept. Schematic representation of a magnetic memory element having a free film and a reference film magnetized substantially perpendicularly, and further comprising a barrier film formed of one or more new oxides according to the principles of the present invention. It is. As a schematic body surface view of a magnetic memory element having a substantially perpendicularly magnetized reference film and free film, 1 as a capping film, barrier film and / or seed film according to additional principles of the inventive concept The use of more than one new oxide is additionally illustrated. 1 illustrates one embodiment of a magnetic memory using magnetic elements according to some embodiments herein. 1 is a schematic cross-sectional view of a magnetic device including an MTJ element formed according to the principles of the present specification. 1 is a schematic drawing of an electronic system in which a magnetic device according to some embodiments of the inventive concept described above is used.

  Exemplary embodiments relate to a magnetic element that can be used in a magnetic device, such as a magnetic memory, and a device that uses the magnetic element. The following techniques are described as being made or used by those skilled in the art, and the claims and their requirements are provided herein. Various modifications to the exemplary embodiments, general concepts, and features described herein are very clear. Exemplary embodiments are primarily described within the terms of the specific methods and systems provided in the specific embodiments. However, the method and system operate efficiently within other runs. Whether terms such as “exemplary embodiment”, “one embodiment” and “another embodiment” are the same, as well as a number of embodiments. Or may be viewed as a different embodiment. The above embodiments are described in the context of systems and / or devices having specific elements. However, the system and / or apparatus may include more or fewer elements than shown and variations in the arrangement and form of the elements are made without departing from the scope of the invention. Exemplary embodiments may also be described within a specific context having specific steps. However, the methods and systems operate efficiently for other methods having different / or additional steps and other sequences of steps that are inconsistent with the exemplary embodiments. Thus, the present invention is not limited to the illustrated embodiments, but has the principles and features described within this specification and is appropriate for the widest range of applications.

  The illustrative embodiments describe a specific magnetic element and magnetic memory having specific elements. Those skilled in the art will readily recognize that the present invention applies to the use of such magnetic elements and magnetic memories having other elements and / or additional elements and / or other characteristics not inconsistent with the present invention. To do. The above methods and systems are also described in context to understand the spin transfer phenomenon. Consequently, those skilled in the art will readily recognize that the theoretical description of the operation of the method and system was made based on an understanding of spin transfer. Those skilled in the art will also readily recognize that the above methods and systems have been described within the context of a structure having a particular relationship with a substrate. However, those skilled in the art will readily recognize that the above methods and systems may be applied in other configurations. Additionally, the methods and systems are described in the context of any layer having a synthetic and / or simple specific membrane. However, those skilled in the art will readily recognize that the membrane can have other structures. Furthermore, the method and system are described in the context of a magnetic element having a particular film. However, those skilled in the art will readily recognize that magnetic elements having additional / or different films consistent with the methods and systems described above may also be used. Moreover, any element is described as being magnetic, ferromagnetic, and ferrimagnetic. As used herein, the term magnetism can encompass ferromagnetism, ferrimagnetism, or similar structures. Accordingly, as used herein, “magnetic” or “ferromagnetic” includes, but is not limited to, ferromagnets and ferrimagnets. The methods and systems are also described in the context of a single element. However, those skilled in the art will readily recognize that the above methods and systems apply to the use of magnetic memories having multiple elements. Moreover, as used herein, “in-plane” is substantially in-plane or parallel to one or more films of the magnetic element. Conversely, “perpendicular” corresponds to a direction that is substantially perpendicular to one or more films of the magnetic element.

  As discussed above, an MTJ element such as the MTJ 10 of FIG. 1 can include a MgO tunneling barrier film. Generally, MgO has a (001) (“rock salt”) crystal structure that provides excellent crystal structure match with bcc (001) CoFe or CoFeB after annealing. Such excellent crystal structure matching provides a higher tunneling magnetoresistance (TMR) ratio that is compatible with, for example, memory device applications. Among other things, a high TMR ratio (eg, 100% or more) causes a faster read operation to be performed. Symmetric filtering enhanced spin polarization induces a decrease in spin transfer torque (STT) critical switching current density.

However, application to smaller elements is desirable to reduce the MTJ RA. To do this, one approach is to reduce the thickness of the MgO barrier film. Unfortunately, this effect can be lost if the MgO film is too thin. In particular, below about 5-10 Ωμm ² RA value, the quality of the barrier rapidly decreases and the TMR ratio decreases. When the MTJ cell diameter is 20 nm, an RA value of 10 Ωμm ² allows the MTJ bit to have a resistance of about 32 kΩ. A high MRJ bit resistance causes the write voltage Vw and write energy Ew to be very high.

  Thus, it has the same or similar effect as MgO, but has a lower barrier height to provide a low RA without the formation of a barrier film that is too thin to reduce thin film quality. It would be desirable to have an improved tunneling barrier film. For example, a lower RA is desirable so as to adjust the size of an STT-RAM of 20 nm node or less based on PMTJ (perpendicular MTJ).

  Additionally, a thin MgO film can be a seed film, a capping film, or a spacer for the best crystal structure matching, which is desirable to obtain the highest TMR ratio and the lowest spin transfer torque switching current density. Can be used as (insert) membrane. Such membranes have a variety of desirable functions. For example, such a film can help reduce the voltage drop at the MTJ during switching. For example, a general capping film can prevent oxidation of a magnetic material (for example, Ta) that can form a film that has lost its magnetism upon reaction. Formation of a film having an MgO capping film and losing magnetism can be prevented, and a strong vertical interface anisotropy can be achieved. Unfortunately, however, the provision of additional MgO films can add series resistance that can ultimately lower the TMR ratio by providing too much resistance.

  Therefore, it is also desirable to have a seed film, capping film, and / or spacer (insert) film with better crystal structure matching that has a much lower RA value. Thus, otherwise, the performance degradation that can be generated can be reduced.

  Further, for example, in some memory structures illustrated in FIG. 2, when MgO is used only for a tunneling barrier film, a plurality of seed films, and a plurality of capping films, the final memory 100 is described below. Several write and read implementation problems can be addressed.

  In FIG. 2, the memory 100 includes a vertical anisotropic capping film 140, a free film 130 having a changeable magnetization 131, a spacer film 120 (eg, a tunneling barrier), and a pinned layer 110. The magnetic element 100 is used in a magnetic device such as a magnetic memory, and current can be applied through the magnetic element 100. Eventually, such a device includes a contact (not shown in FIG. 2) through which current can be provided to and output from the magnetic element 100. Such contacts may also be included, for example, in some or all of the devices discussed below and associated with FIGS. The magnetic elements herein can also include other elements not shown in FIG. For example, in addition to the plurality of seed films, the magnetic element can include an AFM film (not shown) that is adjacent to the fixed film 110 and fixes the magnetization 111 of the fixed film 110.

  In the embodiment illustrated in FIG. 2, the spin transfer torque can be used to switch the magnetization 131 of the free film 130 parallel P or non-parallel AP to the magnetization 111 of the fixed film 110. The required intermediate switching current value is approximately twice as large as when the direction is difficult to switch (for example, A → AP) and when it is easy to switch the direction (for example, AP → A). In addition, when the cell size corresponds to the DRAM cell size at the same technology node, the current supplied from the cell transistor (eg, 414 in FIG. 17) is limited, so that all MTJ bits are switched. The time digits are increased, resulting in a slow write operation that cannot compete with other memory technologies. Even if it is easy to switch direction, when memory 100 performs thousands to tens of thousands of writes, the MTJ bit gets worse and is not switched during several write cycles, and then again Get better. This is because the MTJ bit has a latency period that varies with time when switched by spin torque. The MTJ bit depends on its exact magnetization direction when spin torque is applied. When MgO is used as a seed film and a capping film, the MgO adds a series resistance and lowers the read signal, thus reducing the memory read speed. This will be explained further below.

  3 to 5 illustrate the memory 100 when the MTJ 100 forms a single tunneling barrier film and one or more seed films and a capping film in the memory cell structure as in the device structure illustrated in FIG. Provides write operation execution data from

  Referring to FIGS. 3 to 5, problems in a write operation are discussed in a memory structure having a seed film, a capping film, and a barrier film formed of only MgO. FIG. 3 illustrates the number of MTJ cells that have passed through a single write operation and the write pulse width at various gate voltages Vpp applied to the cell transistor. As shown in FIG. 3, when direction switching is easy (eg, AP → A), the write speed (for all good MTJ cells or bits switched in the memory array) is faster than 20 ns. However, as shown in FIG. 4, when direction switching is difficult (eg, A → AP), the single write operation speed is slower than 500 ns for all MTJ cells or bits to be switched. Thus, the overall write speed is significantly reduced.

  FIG. 5 illustrates the write current distribution for the write operation, both when the direction pulse is fixed and when switching is difficult, when the write pulse is fixed at 5 ns. As shown in FIG. 5, the write current required to program the cell when direction switching is difficult is also significantly greater than the write current required to program the cell when direction switching is easy. It can be expensive. As shown, the average write current when the direction switching is difficult is about 113 μA with a standard deviation of about 47 μA. However, the average write current when the direction switching is easy is only about 86 μA with a standard deviation of 9 μA. Due to the wide distribution of the write current when direction switching is difficult, devices formed in this manner are difficult to function efficiently.

  FIG. 6 is formed in accordance with several principles of the single barrier film MTJ structure (such as a structure in which a free film is disposed within the MTJ structure) and the problems of the present invention that overcome the problems discussed. FIG. 8 is a graph comparing switching currents with a DMTJ (Dual Magnetic Tunneling Junction) structure (for example, as shown in FIG. 7).

  Referring to FIG. 6, the single tunneling barrier film has a concentrated switching current distribution when the direction switching is easy, but has a wide distribution when the direction switching is difficult. By using a DMTJ structure formed in accordance with some principles of the inventive concept, the distribution of switching currents can be significantly reduced when directional switching is difficult.

In addition, although the DMTJ structure using multiple MgO barrier films can achieve fast switching speeds in all two directions (eg, 50 ns or less), all the magnetization states of the MgO barrier are integrated. low TMR ratios may be possible with from both MgO barriers). This results in a TMR ratio between 50% and 80% and an RA greater than 20 Ωμm ² , which is incompatible with application products smaller than the 20 nm node.

  Thus, instead of providing two MgO barriers, one (or two) of the barriers formed from one or more new oxides disclosed herein in accordance with the principles of the inventive concept Alternatively, a new oxide barrier with a lower RA eliminates these problems by providing a further improved TMR ratio.

  With particular reference to FIG. 7, a DMTJ structure according to an embodiment of the inventive concept is disclosed. In the DMTJ structure of the present embodiment, one of the two barriers may be formed of one or more oxides that are newer than MgO.

  In particular, in FIG. 7, a magnetic element 70 used in a magnetic device such as a magnetic memory is a fixed film (or lower reference film) 72, an MgO spacer film 74, a free film 76, and a nonmagnetic material formed of a new oxide. A spacer film 78 and other fixed film (or upper reference film) 79 are included. New oxides, for example, binary, ternary or multi-element alloy oxides with a basic crystal orientation (001) such as MgO after annealing and with additional elements provided to reduce its resistance It can be. The magnetization direction of various magnetic films can be in-plane or perpendicular. In some embodiments, the magnetization directions of various magnetic films can be a combination of in-plane and perpendicular magnetization directions.

More particularly, the binary alloy oxide is represented, for example, by the chemical formula Mg _x A _y O _z , for example, x + y + z = 1, x> y and 0 <x, or y, or z <1. “A” represents an additional element added to MgO. Such an element can be, for example, one of the following elements: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr , Mo, and Rh. The typical barrier height of MgO is about 2-3 eV, but the barrier height with additional atoms A will be below 2 eV, providing a lower RA value. The binary alloy oxide MgxAyOz can still have the (001) crystal structure of MgO.

Similarly, the ternary alloy oxide can be expressed by, for example, the chemical formula Mg _x A ¹ _y1 A ² _y2 O _z , for example, x + y1 + y2 + z = 1, x> y1 + y2, and 0 <x, y1, y2, or z <1 is there. A ¹ and A ² are elements added to MgO that lower the barrier height below about 2 eV, thereby providing a lower RA value.

The multi-element alloy oxide is expressed by, for example, the chemical formula Mg _x A ¹ _y1 A ² _y2 ... An ⁿ _yn O _z , for example, x + y1 + y2 +... + Yn + z = 1, and 0 <x, y1, y2,. <1. A ¹ , A ² ,..., ^An are elements added to MgO that lower the barrier height to about 2 eV or less and provide a lower RA value.

However, in some embodiments, it is confirmed that x + y or x + y1 +... + Yn> 1 and z> 1. For example, one or more of the MgAl ₂ O ₄ , (Mg, Ca, Sr, Ba) SnO ₃ , Mg ₂ SnO ₄ , or NiMn ₂ O ₄ materials can be used as new oxides.

  New oxides can be formed, for example, by sputtering a magnesium target having a plurality of additional atoms of interest and exposing the sputtered film to oxygen. Optionally, two, three or more targets can be sputtered together for binary, ternary, or multi-element alloy oxides. A premixed target can also be provided, in which case the premixed and exposed to oxygen before the metal of interest is sputtered. Alternatively, regardless of the number of particles in the memory device, the metal and oxygen can be premixed into one single target before sputtering. When a new oxide is used as a barrier film, the new oxide is not conductive when used as a seed film or a capping film or as a spacer film in a spin valve structure. possible.

  Without the use of new oxides in one or more MgO barrier films, the TMR ratio can be lower due to the series resistance of the MgO films. With one use in the new oxide, higher TMR ratios and improved spin polarization can be obtained.

  8-16 illustrate other embodiments in a magnetic stack structure for a memory device formed in accordance with the principles of the present invention. In each such embodiment, the reference film can be, for example, a SAF structure that reduces or eliminates bias magnetic field effects on the free film. Further, the free film may have a SAF structure.

  According to FIG. 8, the magnetic element or magnetic stack structure 80 includes a fixed film (or upper reference) having a perpendicular magnetization direction (perpendicular magnetization) arranged on a free film 86 having an in-plane magnetization direction (in-plane magnetization). A non-magnetic spacer film (or tunneling barrier film) 88 formed of one or more new oxides between the free film 86 and the upper reference film 89. Another fixed film (or lower reference film) 82 may be provided to have an in-plane magnetization direction. An MgO tunneling barrier film 84 is formed between the lower reference film 82 and the free film 86. This embodiment can provide very fast switching with a combination of two spin torques from the lower in-plane (magnetized) reference film and the upper perpendicular (magnetized) reference film. MgO can be used in this embodiment as a main tunneling barrier film to provide a higher RA value. Thus, the read signal can be improved by a main MgO barrier with a larger read signal and a higher TMR ratio for faster read operations. When the write current passes through the MTJ structure illustrated in FIG. 8, the upper perpendicular (magnetized) reference film provides a large perpendicular spin torque to the free film 86 and immediately tilts the free film magnetization with respect to the plane. Do not leave. Further, the spin torque from the lower reference film 82 affects the free film magnetization so that the magnetization of the free film 86 is parallel or non-parallel to the lower reference film 82. Also, when the free film is tilted with respect to the film surface, there is a precession rotational effect of free film magnetization. Therefore, the switching of the free film magnetization becomes very fast (eg, tens to hundreds of picoseconds).

  The embodiment illustrated in FIG. 9 is the same as that illustrated in FIG. 8 except for the capping film 99 formed of one or more new oxides aligned on the fixed film (or upper reference film) 98. And similar. A new oxide capping film 99 provides additional interface perpendicular anisotropy in the upper reference film 98. In each of the above-described embodiments and the embodiments described below, it will be confirmed that the order of the structures can be changed without departing from the inventive principle described in the present specification. The magnetic element 90 can also include an in-plane free film 96, a lower reference film 92, and an MgO film 94 therebetween. A non-magnetic spacer film (or tunneling barrier film) 97 is disposed between the free film 96 and the upper reference film 98 and is formed of one or more new oxides.

  FIG. 10 illustrates a magnetic element (or magnetic stack structure or MTJ) 100. The upper reference film 109 in the magnetic element has an in-plane magnetization direction, while the free film 106 and the lower reference film 102 have a perpendicular magnetization direction. A non-magnetic spacer film or tunneling barrier film 108 formed of one or more new oxides can be disposed between the upper reference film 109 and the free film 106, and the MgO tunneling barrier film 104 is formed of the free film 106 and the lower reference film 102. Can be placed between. Since the perpendicular magnetization material has a magnetic anisotropy greater than the in-plane magnetization material, the perpendicular magnetization direction reduces the size of the magnetic device to 20 nm. When a write current is applied through the MTJ shown in FIG. 10, the in-plane magnetized upper reference film 109 provides maximum spin torque to the free film so that the free film is magnetized in the in-plane direction. To. The free film is switched so as to be parallel or non-parallel to the lower reference film 102 in a short period of time by the spin torque from the lower perpendicularly magnetized reference film 102. However, without the in-plane magnetized upper reference film 109, the initial spin torque is zero or close to zero and takes an undesirably long time to be switched.

  FIG. 11 illustrates a magnetic element (or magnetic stack structure or MTJ) 110. The upper reference film 119 and the free film 116 have a perpendicular magnetization direction, and the lower reference film 112 has an in-plane magnetization direction. The MgO tunneling barrier film 118 is disposed between the upper reference film 119 and the free film 116, and the nonmagnetic spacer film (or tunneling barrier film) 114 formed of one or more new oxides is the free film 116 and the lower reference film. 112 may be disposed between. Like the in-plane magnetized upper reference film 109 of the embodiment illustrated in FIG. 10, the in-plane magnetized lower reference film 112 of the present embodiment initializes the switching operation, thereby further increasing the switching speed. Can be provided.

  Each of FIGS. 7-11 illustrates a DMTJ structure formed in accordance with the principles of the present invention. Various single barrier film MTJ structures are also contemplated within the scope of the principles of the present invention, and some embodiments are described with reference to FIGS.

  FIG. 12 illustrates a magnetic element (or magnetic stack structure) 120. One or more new oxides are used as the seed film 122 and a free film 124 is formed on the seed film. The MgO tunneling barrier film 126 separates the free film 124 from the fixed film (or upper reference film) 128. In certain such embodiments, both the free film 124 and the upper reference film 128 have a perpendicular magnetization direction. As previously mentioned, the perpendicular magnetization direction can allow for smaller device structures. Applied Physics Letters, Vol. 99, 042501 (2001), and IEEE Magnetics Letters, Vol. 2, 3000204 (2011) as discussed in detail, when the activation volume of the free membrane is smaller than the total volume, in a vertical single tunneling barrier membrane structure, switching is fast nucleation of domains. Can be achieved through.

  FIG. 13 illustrates a magnetic element (or magnetic stack structure or MTJ) 130. A capping film 138 formed of one or more new oxides may be provided. The capping film 138 can be disposed on the free film 136, and the free film 136 can be separated from the fixed film (or lower reference film) 132 by the MgO tunneling barrier film 134. In this embodiment, both the free film 136 and the lower reference film 132 may have a perpendicular magnetization direction.

  FIG. 14 illustrates another magnetic element (or magnetic stack structure) 140 formed in accordance with the principles of the inventive concept. As shown in FIG. 14, the seed film 142 may be formed of one or more new oxides disclosed herein. The fixed film (or lower reference film) 144 may be formed on the seed film 142. The free film 148 may be provided separated from the lower reference film 144 by the MgO tunneling barrier film 146. Finally, the capping film 149 can be formed of one new oxide and placed on the free film 148. In this embodiment, both the free film 148 and the lower reference film 144 may have a perpendicular magnetization direction.

  FIG. 15 illustrates a magnetic element or DMTJ magnetic stack structure 150 similar to that illustrated in FIG. 8, except that each of the magnetic films has a perpendicular magnetization direction. More specifically, as shown in FIG. 15, the fixed film (or upper reference film) 159 may be disposed on the free film 156. A nonmagnetic spacer film or tunneling barrier film 158 is disposed between the fixed film and the free film. The spacer film 158 can be formed of one or more new oxides disclosed herein. Another fixed film (or lower reference film) 152 may be disposed under the free film 156. An MgO tunneling barrier film 154 is disposed between the free film 156 and the lower reference film 152. Each of the reference numerals 152 and 159 and the free film 156 may have a perpendicular magnetization direction, and the magnetization direction of the upper reference film 159 is arranged opposite to the magnetization direction of the lower reference film 152. As previously mentioned, device structures with smaller perpendicular magnetization directions can be produced, and fast switching can be achieved if the active volume is less than the total volume of the free membrane.

  Referring to FIG. 16, a magnetic element (or magnetic stack structure or MTJ) 160 according to another embodiment includes a seed film 161 formed of one or more new oxides and a fixed film formed on the seed film 161. (Or lower reference film) 163, MgO tunneling barrier film 164 disposed between lower reference film 163 and free film 165, one or more new oxides, free film 165 and other fixed film (or A non-magnetic spacer film or tunneling barrier film 167 disposed between the upper reference film 168 and a capping film 169 formed of one or more oxides and disposed on the upper reference film. . Each of the free film and the reference film has a perpendicular magnetization direction, and the upper and lower reference films 163 and 168 have magnetization directions opposite to each other.

  FIG. 17 illustrates an embodiment of a portion of a magnetic memory 400 that utilizes the magnetic elements described above. In this embodiment, the magnetic memory may be the STT-RAM 400. The STT-RAM 400 includes not only a word line selector / driver (word line selector / driver) 404 but also read / write column selector / driver (reading / writing column selector / drivers) 402 and 406. The SST-RAM 400 also includes a memory cell 410 that includes a magnetic element 412 and a selection / separation element 414. The magnetic element 412 can be any of the magnetic elements illustrated in FIGS. Read / write column selector / drivers 402, 406 can be used to selectively apply current to bit line 403 and cell 410. The word line selector / driver 404 can select multiple columns of the STT-RAM 400 by enabling a selection / isolation device 414 coupled to the selected word line 405. In the illustrated embodiment, the additional magnetic field used for writing can be provided by bit line 403.

  Referring to FIG. 17, in accordance with other principles of the inventive concept, a circuit structure such as that illustrated in FIG. 17 can be used as a seed, capping, or barrier film for binary, ternary, or multi-component alloy oxidation. Can be formed using a magnetic memory device including an object, thereby improving the performance characteristics at a reduced memory cell size, faster write and read speed, and reduced read / write random errors. obtain.

  Referring to FIG. 18, the access device is disposed in a designated area of the substrate 10.

  The substrate 10 is a silicon substrate, a gallium arsenide substrate, a silicon germanium substrate, a ceramic substrate, a quartz substrate, or a glass substrate for display, and may be an SOI (Silicon On Insulator). In this case, the access device can be a MOS transistor. In this case, the access transistor is arranged in the limited active region by the element isolation film 11 formed in the designated region of the substrate 10. In particular, the access transistor includes a source region 13 and a drain region 12 which are disposed in the active region and are spaced apart from each other, and a gate electrode 22 formed on a channel region upper region between the source region 13 and the drain region 12. be able to. The gate electrode 22 can extend across the top of the active region to function as a word line. The gate electrode 22 is insulated from the active region by the gate insulating film 21.

  The first interlayer insulating film 20 may be formed on an upper portion of the substrate 10 having an access transistor, and the source line 32 may be disposed on a designated region of the first interlayer insulating film 20 corresponding to the source region 13. The source line 32 may be formed to extend in the same direction as the gate electrode 22. The source line contact 24 and the landing contact 23 are formed in the first interlayer insulating film 20. The source line contact 24 electrically connects the source line 32 and the source region 13, and the landing contact 23 is formed on the drain region 12 to electrically connect the MTJ element to the drain region 12 of the access transistor.

  The second interlayer insulating film 30 may be formed on the first interlayer insulating film 20. The source line 32 is disposed on the first interlayer insulating film 20. A lower electrode contact 31 electrically connected to the landing contact 23 may be formed in the second interlayer insulating film 30.

  For example, the MTJ element 10 according to some embodiments of the present specification described above with reference to FIGS. 7 to 16 may be disposed on the electrode contact 31 and / or the second interlayer insulating film 30. Since the magnetic tunnel junction element 10 has been described above, a detailed description thereof will be omitted.

  The magnetic tunnel junction device 10 and the drain region 12 are electrically connected through the landing contact 23 and the lower electrode contact 31.

  The third interlayer insulating film 40 can be formed on the MTJ element 10. The bit lines 50 may be arranged on the third interlayer insulating film 40 while crossing the gate electrode 22. The bit line 50 and the magnetic tunnel junction device 10 are electrically connected by the upper electrode contact 41. In an optional step, the upper electrode contact 41 may be omitted.

  The first, second, and third interlayer insulating films 20, 30, and 40 can be formed of, for example, a silicon oxide film or a silicon nitrite oxynitride film. For example, the landing contact 23, the source line contact 24, the source line 32, the lower electrode contact 31, the upper electrode contact 41, and the bit line 50 are made of W, Ru, Ta, Cu, Al, or impurity-doped polysilicon. Can be formed.

  On the bit line 50, a conductive wiring for electrical contact with a circuit in a circuit circuit region (not shown) may be further formed.

  FIG. 19 is a schematic drawing of an electronic system 900 in which a magnetic element according to some embodiments of the inventive concept described above is used. The electronic system 900 can be used in various electronic devices such as computers, notebook computers, ultra mobile PCs (UMPC), tablet PCs, servers, workstations, mobile telecommunications devices, satellites, set top boxes, TVs, etc. However, it is not limited to what was mentioned above. For example, the electronic system 900 can include a memory system 912, a processor 914, a RAM 916, and a user interface 918, and the bus 920 can be used to perform information exchange. The memory system 912 can include a magnetic element according to some embodiments described hereinabove. The processor 914 can be a microprocessor or a mobile process AP. The processor 914 includes a floating point unit (FPU), an arithmetic logic unit (ALU), a graphics processing unit (GPU), and a digital signal processing core (digital signal processing). ) Or a combination thereof may have a processor core (not shown). The processor 914 can execute programs and controls for the electronic system 900. The RAM 916 can be used as an operating memory for the processor 914. For example, the processor 914 or the RAM 916 can include a magnetic memory according to the above-described embodiments. Alternatively, processor 914 and RAM 916 can be used as input / output data to / from the electronic system. The memory system 912 can store code for operation of the processor 914, data advanced by the processor 914, or external input data. The memory system 912 can include a controller and memory.

  The electronic system 900 can be used as an electronic controller for a variety of electronic devices.

  Higher TMR ratio with lower RA value and lower STT write current density and voltage by forming a magnetic stack structure with one or more new oxides as seed film, capping film, and / or barrier or spacer film Can be provided. Additionally, higher interface normal anisotropy can be achieved by using such improved seed films, capping films and intercalation materials. The improved material also provides a greatly reduced possibility of read and write errors with a set direction for switching and excellent selection characteristics.

For example, by forming one of the barrier films using MgTb _y O as a new Mg _x A _y O _z binary oxide, high coherent tunneling can be achieved and the TMR ratio Can be high. In addition, excellent crystal matching between the barrier film and the magnetic fixed film or free film can be obtained. Similarly, MgTb _y O (or one of the new oxides) is used to form a seed or capping film, obtaining excellent lattice matching between crystal structures and lower RA values. Can be achieved. That is, since Tb is preferably bonded to O, fewer oxygen atoms react with Mg, resulting in a lower barrier height and lower RA value.

  In some of the illustrated embodiments, MgO is generally used as one of the barrier films and a new oxide is used as the second barrier film, capping film, or seed film. However, the principles herein can also be applied when a barrier material different from MgO is used. If a new oxide is used to provide more than one barrier film, one of the new oxide films is desirable and may have an RA value that is at least an order of magnitude higher than the other new oxide barrier films. it can. Since the integration of the magnetization states depends on the RA value, it may be difficult to read the device efficiently if the RA value is too small. Thus, in other embodiments, the main tunneling barrier can be formed from one or more new oxide systems.

  In some embodiments, the writing method in the device can include using a bipolar or unipolar current (or voltage) that flows through the MTJ device to induce switching. . Optionally, the writing method can include using a bipolar or monopolar current (or voltage) that flows through the MTJ device with an auxiliary pulse current adjacent to the MTJ device. In one embodiment, the auxiliary pulse current can be coupled to the MTJ through a magnetic field. In other embodiments, the auxiliary pulse current can induce a spin current or spin torque at the MTJ from a physical effect such as the Spin Hall Effect or the Rashba effect. The auxiliary pulse current can lead or superimpose the current (or voltage) flowing through the MTJ. The method can be made to switch even faster with a lower write error rate.

  In particular, according to one embodiment, a magnetic memory including multiple magnetic storage cells (each including at least one magnetic element described above) as shown in FIG. 17 is a bipolar or monopolar current through at least one magnetic element. Or can be programmed by applying a voltage to at least one magnetic element. Bipolar or monopolar currents or voltages may be sufficient to program at least one magnetic element. Each of the multiple magnetic storage cells can include at least one selection element. Thus, the at least one magnetic element can be programmed by passing a write current through the at least one magnetic element or by applying a voltage to the at least one magnetic element.

  In another embodiment, as shown in FIG. 17, a magnetic memory that includes a number of magnetic storage cells (including at least one magnetic element described above) includes at least one magnetic element that is part of the number of magnetic storage cells. A first current is applied adjacent to the magnetic element rather than through (eg, an alternating current is applied to a conductive line adjacent to the at least one magnetic element) and a second current is applied through the at least one magnetic element Or can be programmed by applying a voltage. The first current can create a magnetic field or additional spin torque. The second current or voltage and the magnetic field or additional spin torque may be sufficient to program at least one magnetic element. According to the above-described embodiments of the inventive concept, a faster switching can be realized with a lower error rate in the operation of the magnetic memory. In other words, with the new oxide of the present invention concept, the fastest switching can be realized with the smallest memory cell size, for example, 20 nm node or less, by adding the above-described auxiliary writing.

  In general terms used in this specification and specifically appended claims (eg, the body of the appended claims) are “open” terms (eg, the term “including” includes “including” but not limited to, including, but not limited to, the term “having,” must be interpreted as “having at least,” and the term “includes,” includes. Can be understood by those skilled in the art to be used as "includes but is not limited to". If the above specific number of a claim is intended, such intention is defined in the claim, and if there is no such above, such intention is It can be understood by those skilled in the art that it does not exist. For example, for the purpose of assisting understanding, the following appended claims include the introductory phrases “at least one, at least one” and “one or more, one or more” as described above in the claims. However, when the same claim includes introductory phrases “one or more” or “at least one” and ambiguous phrases such as “a”, “an”, the use of such phrases is Any particular claim, including the above-described introduction of a claim by an ambiguous phrase “a” or “an”, may be just one such claim, such as the claim introduced to such invention. Do not exclude the inclusion of limiting terms (eg, “one” and / or “1” is usually taken to mean “at least one” or “one or more”) and are identical Is valid for the use of ambiguous phrases used to introduce the claims above. Furthermore, where a rule similar to “at least one of A, B, and C” is used, such an interpretation generally assumes that the skilled person understands the rule. Intended (eg, “a system having at least one of A, B, and C” has only A, only B, only C, or both A and B Including, but not limited to, systems having both A and C, both B and C, or both A, B, and C). Where a rule similar to “at least one of A, B, or C” is used, such an interpretation is generally intended with the understanding of those skilled in the art. (Eg, “a system having at least one of A, B, or C” has only A, only B, only C, or both A and B, Including but not limited to systems having both A and C, B and C together, or A, B and C together). Those skilled in the art will also recognize that any clauses indicating substantially any disjunctive word and / or two or more alternative terms are in the detailed description, claims or drawings. Regardless of the case, it is understood that the possibility of including one of the terms, any one of the terms, or both of the terms is considered. For example, the phrase “A or B” can be understood to include the possibilities of “A” or “B” or “A and B”.

  Throughout this specification, references to “one embodiment” or “an embodiment” refer to at least one embodiment in which the particular feature, structure, or characteristic described in connection with the embodiment is included in the invention. It is included in. Thus, the phrase “in one embodiment” or “in one embodiment” does not necessarily refer to the same embodiment. In addition, the particular features, structures, or characteristics may be formed in other suitable forms other than the particular embodiments illustrated, and all such forms are encompassed within the claims of this application. Various magnetic memory device structures and methods and systems for providing magnetic memory devices and memories manufactured using the magnetic memory devices are described. Although the above structures, methods, and systems are described by embodiments, various modifications to the embodiments are possible, and therefore, modifications are considered within the mapping and scope of the devices, methods, and systems disclosed herein. Those skilled in the art will readily recognize that. Accordingly, various modifications can be made by those skilled in the art without departing from the mapping and scope of the appended claims.

DESCRIPTION OF SYMBOLS 10 ... Substrate 11 ... Element isolation film 12 ... Drain region 13 ... Source region 20 ... 1st interlayer insulation film 21 ... Gate insulation film 22 ... Gate electrode 23 ... Landing contact 24 ... Source line contact 30 ... Second interlayer insulating film 31 ... Lower electrode contact 32 ... Source line 40 ... Third interlayer insulating film 41 ... Upper electrode contact 50 ... -Bit lines 70, 80, 90, 100, 110, 120, 130, 140, 150, 160, 412 ... magnetic elements 72, 82, 79, 89, 98, 110, 128, 132, 144, 152, 159 , 163, 168... Fixed film 74, 84, 120... Spacer film 76, 86, 96, 106, 116, 124, 130, 136, 148 156, 165 ... free film 78, 88, 97, 108, 114, 158, 167 ... nonmagnetic spacer layer 92, 102, 112 ... lower reference film 94, 104, 118, 126, 134, 146, 154, 164 ... MgO films 99, 138, 149 ... capping films 109, 119 ... upper reference films 111, 131 ... magnetizations 122, 142, 161 ... seed films 140 ... Vertical anisotropic capping film 400 ... Magnetic memory 402, 406 ... Read / write column selector / driver 403 ... Bit line 405 ... Word line 404 ... Word line selector / driver 410 ... Memory cell 414 ... selection / separation element, transistor 900 ... electronic system 912 ... memo Resystem 914 ... Processor 916 ... RAM
918 ... User interface 920 ... Bus

Claims (9)

A first reference membrane;
A free membrane,
A first nonmagnetic spacer film disposed between the first reference film and the free film;
A seed film disposed under the first reference film,
The first nonmagnetic spacer film includes a binary, ternary, or multi-element alloy oxide;
The binary, ternary, or multi-element alloy oxide of the first nonmagnetic spacer film is Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, MgO having one or more additional elements selected from the group consisting of Nb, Cr, Mo, and Rh,
The seed film includes a binary, ternary, or multi-element alloy oxide;
The two-source the seed layer, ternary or multi-alloy oxide is Ru, T a, Tb, Cu , V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, And MgO having one or more additional elements selected from the group consisting of Rh,
The magnetic element for a semiconductor device, wherein the binary, ternary, or multi-element alloy oxide of the first nonmagnetic spacer film is different from the binary, ternary, or multi-element alloy oxide of the seed film.   The magnetic element according to claim 1, wherein the first nonmagnetic spacer film is an insulating tunneling barrier film.   The magnetic element according to claim 1, wherein the first nonmagnetic spacer film includes a conductive material that functions as a spin valve. A capping film disposed on the first reference film;
The capping film includes a binary, ternary, or multi-element alloy oxide;
The binary, ternary or multi-element alloy oxides of the capping film are Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo. 4. The magnetic element according to claim 1, comprising MgO having one or more additional elements selected from the group consisting of Rh and Rh.   The magnetic element according to claim 1, wherein the first nonmagnetic spacer film includes a (001) crystal structure. A second reference film disposed on an opposing surface of the free film;
The magnetic element according to claim 1, further comprising: a second nonmagnetic spacer film disposed between the second reference film and the free film.   The magnetic element according to claim 6, wherein the second nonmagnetic spacer film contains MgO. The free film and the second reference film have an in-plane magnetization direction;
The magnetic element according to claim 6, wherein the first reference film has a perpendicular magnetization direction. The free film and the second reference film have a perpendicular magnetization direction;
The magnetic element according to claim 6, wherein the first reference film has an in-plane magnetization direction.