JP2013229086A - メモリ装置、メモリ制御装置、メモリ制御方法 - Google Patents

メモリ装置、メモリ制御装置、メモリ制御方法 Download PDF

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Publication number
JP2013229086A
JP2013229086A JP2012102135A JP2012102135A JP2013229086A JP 2013229086 A JP2013229086 A JP 2013229086A JP 2012102135 A JP2012102135 A JP 2012102135A JP 2012102135 A JP2012102135 A JP 2012102135A JP 2013229086 A JP2013229086 A JP 2013229086A
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JP
Japan
Prior art keywords
data
memory
page
writing
written
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Pending
Application number
JP2012102135A
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English (en)
Japanese (ja)
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JP2013229086A5 (enExample
Inventor
Yuto Hosogaya
祐人 細萱
Shingo Aso
伸吾 麻生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012102135A priority Critical patent/JP2013229086A/ja
Priority to US13/866,636 priority patent/US8885406B2/en
Priority to CN201310138327.0A priority patent/CN103377704A/zh
Publication of JP2013229086A publication Critical patent/JP2013229086A/ja
Publication of JP2013229086A5 publication Critical patent/JP2013229086A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
JP2012102135A 2012-04-27 2012-04-27 メモリ装置、メモリ制御装置、メモリ制御方法 Pending JP2013229086A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012102135A JP2013229086A (ja) 2012-04-27 2012-04-27 メモリ装置、メモリ制御装置、メモリ制御方法
US13/866,636 US8885406B2 (en) 2012-04-27 2013-04-19 Memory device, memory control device, and memory control method
CN201310138327.0A CN103377704A (zh) 2012-04-27 2013-04-19 存储器装置、存储器控制装置以及存储器控制方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012102135A JP2013229086A (ja) 2012-04-27 2012-04-27 メモリ装置、メモリ制御装置、メモリ制御方法

Publications (2)

Publication Number Publication Date
JP2013229086A true JP2013229086A (ja) 2013-11-07
JP2013229086A5 JP2013229086A5 (enExample) 2015-03-19

Family

ID=49462713

Family Applications (1)

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JP2012102135A Pending JP2013229086A (ja) 2012-04-27 2012-04-27 メモリ装置、メモリ制御装置、メモリ制御方法

Country Status (3)

Country Link
US (1) US8885406B2 (enExample)
JP (1) JP2013229086A (enExample)
CN (1) CN103377704A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9811275B2 (en) 2015-02-27 2017-11-07 Toshiba Memory Corporation Memory system and data control method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9817751B2 (en) * 2014-09-03 2017-11-14 Apple Inc. Multi-phase programming schemes for nonvolatile memories

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167039A (ja) * 1990-10-31 1992-06-15 Toshiba Corp データ書き込み方式
US20060198202A1 (en) * 2005-02-18 2006-09-07 M-Systems Flash Disk Pioneers Ltd. Flash memory backup system and method
JP2008524705A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション スクラッチパッドブロック
JP2008524710A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション 不揮発性メモリならびにスクラッチパッドおよび更新ブロックのための改良されたインデックス付けを伴う方法
JP2008524711A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション 不揮発性メモリおよびマルチストリーム更新を伴う方法
JP2008524706A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション 不揮発性メモリおよびマルチストリーム更新追跡を伴う方法
JP2009048750A (ja) * 2007-08-23 2009-03-05 Toshiba Corp 不揮発性半導体記憶装置
WO2009107505A1 (en) * 2008-02-28 2009-09-03 Kabushiki Kaisha Toshiba Memory system
US20110055625A1 (en) * 2009-08-28 2011-03-03 Toshiyuki Honda Nonvolatile memory device and memory controller
JP2011154595A (ja) * 2010-01-28 2011-08-11 Seiko Epson Corp 集積回路装置及び電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5111882B2 (ja) 2007-02-09 2013-01-09 株式会社東芝 不揮発性半導体記憶装置
KR101024142B1 (ko) * 2009-02-02 2011-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
JP2010198407A (ja) 2009-02-26 2010-09-09 Sony Corp 情報処理装置、およびデータ記録制御方法、並びにプログラム
KR101605827B1 (ko) * 2009-08-24 2016-03-23 삼성전자주식회사 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템
US9037777B2 (en) * 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
KR101734204B1 (ko) * 2010-06-01 2017-05-12 삼성전자주식회사 프로그램 시퀀서를 포함하는 플래시 메모리 장치 및 시스템, 그리고 그것의 프로그램 방법

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167039A (ja) * 1990-10-31 1992-06-15 Toshiba Corp データ書き込み方式
JP2008524705A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション スクラッチパッドブロック
JP2008524710A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション 不揮発性メモリならびにスクラッチパッドおよび更新ブロックのための改良されたインデックス付けを伴う方法
JP2008524711A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション 不揮発性メモリおよびマルチストリーム更新を伴う方法
JP2008524706A (ja) * 2004-12-16 2008-07-10 サンディスク コーポレイション 不揮発性メモリおよびマルチストリーム更新追跡を伴う方法
US20060198202A1 (en) * 2005-02-18 2006-09-07 M-Systems Flash Disk Pioneers Ltd. Flash memory backup system and method
JP2009048750A (ja) * 2007-08-23 2009-03-05 Toshiba Corp 不揮発性半導体記憶装置
WO2009107505A1 (en) * 2008-02-28 2009-09-03 Kabushiki Kaisha Toshiba Memory system
JP2009205555A (ja) * 2008-02-28 2009-09-10 Toshiba Corp メモリシステム
US20110055625A1 (en) * 2009-08-28 2011-03-03 Toshiyuki Honda Nonvolatile memory device and memory controller
JP2011048725A (ja) * 2009-08-28 2011-03-10 Panasonic Corp 不揮発性記憶装置および不揮発性メモリコントローラ
JP2011154595A (ja) * 2010-01-28 2011-08-11 Seiko Epson Corp 集積回路装置及び電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9811275B2 (en) 2015-02-27 2017-11-07 Toshiba Memory Corporation Memory system and data control method

Also Published As

Publication number Publication date
CN103377704A (zh) 2013-10-30
US20130286731A1 (en) 2013-10-31
US8885406B2 (en) 2014-11-11

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