CN103377704A - 存储器装置、存储器控制装置以及存储器控制方法 - Google Patents

存储器装置、存储器控制装置以及存储器控制方法 Download PDF

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Publication number
CN103377704A
CN103377704A CN201310138327.0A CN201310138327A CN103377704A CN 103377704 A CN103377704 A CN 103377704A CN 201310138327 A CN201310138327 A CN 201310138327A CN 103377704 A CN103377704 A CN 103377704A
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CN
China
Prior art keywords
data
page
memory
written
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310138327.0A
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English (en)
Chinese (zh)
Inventor
细萱祐人
麻生伸吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN103377704A publication Critical patent/CN103377704A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
CN201310138327.0A 2012-04-27 2013-04-19 存储器装置、存储器控制装置以及存储器控制方法 Pending CN103377704A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012102135A JP2013229086A (ja) 2012-04-27 2012-04-27 メモリ装置、メモリ制御装置、メモリ制御方法
JP2012-102135 2012-04-27

Publications (1)

Publication Number Publication Date
CN103377704A true CN103377704A (zh) 2013-10-30

Family

ID=49462713

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310138327.0A Pending CN103377704A (zh) 2012-04-27 2013-04-19 存储器装置、存储器控制装置以及存储器控制方法

Country Status (3)

Country Link
US (1) US8885406B2 (enExample)
JP (1) JP2013229086A (enExample)
CN (1) CN103377704A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9817751B2 (en) * 2014-09-03 2017-11-14 Apple Inc. Multi-phase programming schemes for nonvolatile memories
US9811275B2 (en) 2015-02-27 2017-11-07 Toshiba Memory Corporation Memory system and data control method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167039A (ja) * 1990-10-31 1992-06-15 Toshiba Corp データ書き込み方式
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7386655B2 (en) * 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US8041879B2 (en) * 2005-02-18 2011-10-18 Sandisk Il Ltd Flash memory backup system and method
JP5111882B2 (ja) 2007-02-09 2013-01-09 株式会社東芝 不揮発性半導体記憶装置
JP2009048750A (ja) * 2007-08-23 2009-03-05 Toshiba Corp 不揮発性半導体記憶装置
JP2009205555A (ja) * 2008-02-28 2009-09-10 Toshiba Corp メモリシステム
KR101024142B1 (ko) * 2009-02-02 2011-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
JP2010198407A (ja) 2009-02-26 2010-09-09 Sony Corp 情報処理装置、およびデータ記録制御方法、並びにプログラム
KR101605827B1 (ko) * 2009-08-24 2016-03-23 삼성전자주식회사 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템
JP2011048725A (ja) * 2009-08-28 2011-03-10 Panasonic Corp 不揮発性記憶装置および不揮発性メモリコントローラ
US9037777B2 (en) * 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
JP2011154595A (ja) * 2010-01-28 2011-08-11 Seiko Epson Corp 集積回路装置及び電子機器
KR101734204B1 (ko) * 2010-06-01 2017-05-12 삼성전자주식회사 프로그램 시퀀서를 포함하는 플래시 메모리 장치 및 시스템, 그리고 그것의 프로그램 방법

Also Published As

Publication number Publication date
JP2013229086A (ja) 2013-11-07
US20130286731A1 (en) 2013-10-31
US8885406B2 (en) 2014-11-11

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Application publication date: 20131030