JP2013214501A - 二次電池用負極及び二次電池 - Google Patents
二次電池用負極及び二次電池 Download PDFInfo
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- JP2013214501A JP2013214501A JP2013032996A JP2013032996A JP2013214501A JP 2013214501 A JP2013214501 A JP 2013214501A JP 2013032996 A JP2013032996 A JP 2013032996A JP 2013032996 A JP2013032996 A JP 2013032996A JP 2013214501 A JP2013214501 A JP 2013214501A
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- negative electrode
- protrusion
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- secondary battery
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- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
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Classifications
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
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- H—ELECTRICITY
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
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- H—ELECTRICITY
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
【解決手段】実質的に垂直方向に延びた複数の突起部と、複数の突起部と共通の材料からなり複数の突起部と接続する基礎部と、を有する集電体と、活物質層と、高分子材料層と、突起部と、突起部を覆った負極活物質層とからなる負極突起部と、基礎部と、基礎部を覆った負極活物質層とからなる負極基礎部と、を有し、負極突起部の根元を含む側面の一部と、負極基礎部の上面は、高分子材料層に覆われている二次電池用負極である。
【選択図】図1
Description
本実施の形態では、充放電による劣化が少なく、高充放電サイクル特性を有する二次電池用負極の構造及びその製造方法について、図1乃至図8を用いて説明する。
図1(A)は、負極集電体の表面部分を拡大して模式的に示した断面図である。負極集電体101は、複数の突起部101bと、複数の突起部のそれぞれが共通して接続する基礎部101aを有する。このため、負極集電体101は、あたかも生け花で用いる剣山(Kenzan:Spiky Frog)のような構造をしている。図においては基礎部101aを薄く記載しているが、一般に突起部101bに対して基礎部101aは極めて厚い。
次に、図1(B)に示す負極100の製造方法について、図5を用いて説明する。
次に、図2(B)に示す負極100の製造方法について、図6(A)乃至(D)を用いて説明する。本製造方法では負極の製造方法1と比べ、保護層を形成しエッチングの際のハードマスクとして用いる点で異なる。
負極の製造方法1及び2では、フォトレジストパターンの形成にフォトリソグラフィ技術を用いて負極を製造したが、本製造方法においてはこれと異なる方法により図1(B)に示す負極100を製造する。本製造方法は、図7(A)乃至(D)を用いて説明する。本製造方法においては、ナノインプリント法を用いて負極集電体を製造する。
本製造方法においては、負極の製造方法1乃至3に記載の方法と異なる方法により図1(B)に示す負極100を製造する。本製造方法について、図8(A)乃至(C)を用いて説明する。本製造方法は、集電体材料の表面に突起部を形成した後、該材料とは異なる導電材料からなる導電層で被覆して負極集電体を製造する。
本実施の形態では、二次電池の構造及び製造方法について説明する。
本発明の一態様に係る二次電池は、電力により駆動する様々な電気機器の電源として用いることができる。
次に、電気機器の一例である携帯情報端末について、図15を用いて説明する。
さらに、電気機器の一例である移動体の例について、図16を用いて説明する。
負極集電体として、材料に0.7mm厚のシート状のチタン(以下、チタンシートという。)を用いた。当該チタンの純度は99.5%である。このチタンシート上にフォトレジストパターンを形成した後、フォトレジストから露出したチタンシートの表面をドライエッチング法によりエッチングした。エッチングは、ソース(13.56MHz)/バイアス(3.2MHz)を1000/80W、圧力を0.67Pa、エッチングガスをBCl3とCl2の混合ガスとしてその流量を150/50sccm、基板温度を−10℃とした条件下で440秒行った。当該エッチングにより、基礎部及び突起部を有する負極集電体を形成した。
上記のように作製した本発明に係る負極を用いた電池の特性を評価した。特性の評価は、対極にリチウムを用いた二極式セルにより行った。電解液には、エチレンカーボネート(EC)とジエチルカーボネート(DEC)とを体積比で1:1の割合で混合した混合溶液中へ六フッ化リン酸リチウム(LiPF6)を1モル/リットルの濃度で溶解したものを用いた。充放電は初回のみ0.05C(20時間で充電)のレートで行い(CC−CV)、2回目以降は0.25C(4時間で充電)のレートで行った(CC)。なお、放電容量がシリコンの理論容量の半分となる2100mAh/gの範囲において評価を行った。
また、本発明に係る負極の評価のため、比較として、高分子材料層を設けていない負極を用いた電池の特性を評価した。当該負極は高分子材料層を形成していないことを除いて、上記と同様の作製方法による同様の構造の負極である。すなわち、チタンシートは上記と同等の0.7mm厚のものである。また、形成した負極活物質層は、上記と同条件の減圧CVD法により成膜した膜厚約500nmの薄膜状の非晶質シリコンである。図20において、曲線502が当該比較のための測定結果である。60サイクルまでは安定して2100mAh/gの容量を維持するものの、60サイクル以降は急激に容量が低下していることが分かる。この容量の急激な低下は、充放電の繰り返しに伴うシリコンの膨張収縮により、集電体からシリコンの剥脱が進んでいるものと考えられる。
以上のことから、高分子材料層で負極基礎部及び負極突起部の根元近傍をコートしていない比較例においては、あるサイクルを境に急激に容量が低下することが分かった。一方、本発明に係る負極を用いた場合には、急激な容量の低下を抑えることができた。これらの比較から、SBR等の高分子材料層によって負極基礎部及び負極突起部の根元を含む一部を覆うことで、充放電容量が高く、また充放電による劣化が少ない二次電池用負極ができることが確認された。
101 負極集電体
101a 基礎部
101b 突起部
101c 突起部
102 負極活物質層
103 突起部の上面の端部
104 突起部の根元の端部
105 保護層
106 負極基礎部
107 負極突起部
108 高分子材料層
110 突起
111 突起
112 突起
113 突起
114 突起
115 突起
116 突起
117 突起
118 突起
120 フォトレジストパターン
121 集電体材料
123 モールド
124 樹脂
125 集電体材料
126 導電層
300 正極
301 正極集電体
302 正極活物質層
303 正極活物質
304 グラフェン
305 スペーサ
306 電解液
401 負極突起部
402 高分子材料層
403 負極突起部
404 高分子材料層
405 負極突起部
406 高分子材料層
501 曲線
502 曲線
601 負極突起部
602 クラック
603 高分子材料層
604 負極突起部
605 クラック
6000 コイン形の二次電池
6001 負極缶
6002 ガスケット
6003 正極缶
6004 負極集電体
6005 負極活物質層
6006 セパレータ
6007 正極活物質層
6008 正極集電体
6009 負極
6010 正極
7000 円筒型の二次電池
7001 正極キャップ
7002 電池缶
7003 正極端子
7004 正極
7005 セパレータ
7006 負極
7007 負極端子
7008 絶縁板
7009 絶縁板
7010 ガスケット
7011 PTC素子
7012 安全弁機構
8000 表示装置
8001 筐体
8002 表示部
8003 スピーカー部
8004 二次電池
8100 照明装置
8101 筐体
8102 光源
8103 二次電池
8104 天井
8105 側壁
8106 床
8107 窓
8200 室内機
8201 筐体
8202 送風口
8203 二次電池
8204 室外機
8300 電気冷凍冷蔵庫
8301 筐体
8302 冷蔵室用扉
8303 冷凍室用扉
8304 二次電池
9033 留め具
9034 スイッチ
9035 電源スイッチ
9036 スイッチ
9038 操作スイッチ
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a 領域
9632b 領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 コンバータ
9638 操作キー
9639 ボタン
9700 電気自動車
9701 二次電池
9702 制御回路
9703 駆動装置
9704 処理装置
Claims (9)
- 実質的に垂直方向に延びた複数の突起部と、前記複数の突起部と共通の材料からなり前記複数の突起部と接続する基礎部と、を有する集電体と、
活物質層と、
高分子材料層と、
前記突起部と、前記突起部を覆った前記活物質層とからなる負極突起部と、
前記基礎部と、前記基礎部を覆った前記活物質層とからなる負極基礎部と、を有し、
前記負極突起部の根元を含む側面の一部と、前記負極基礎部の上面は、前記高分子材料層に覆われていることを特徴とする二次電池用負極。 - 請求項1において、
前記共通の材料は、チタンを含む導電性材料であることを特徴とする二次電池用負極。 - 請求項1又は2において、
前記高分子材料層は、スチレン−ブタジエンゴム(SBR)、ポリビニルアルコール(PVA)、スチレン・イソプレン・スチレンゴム、アクリルニトリル・ブタジエンゴム、ブタジエンゴム、エチレン・プロピレン・ジエン共重合体、ポリイミド、ポリ塩化ビニル、ポリテトラフルオロエチレン、ポリエチレン、ポリプロピレン、イソブチレン、ポリエチレンテレフタレート、ナイロン、カルボキシメチルセルロース(CMC)、ポリフッ化ビニリデン(PVdF)、ポリアクリロニトリル(PAN)、ポリエチレンオキサイド(PEO)、ポリスチレン、ポリアクリル酸メチル、ポリメタクリル酸メチル(PMMA)、ポリプロピレンオキサイドのうち、少なくともいずれか一を有することを特徴とする二次電池用負極。 - 請求項1乃至3のいずれか一項において、
前記負極突起部の根元を含む側面の一部は、前記根元から前記負極突起部の高さの2/4以上4/4未満の範囲にあたる部分であることを特徴とする二次電池用負極。 - 請求項1乃至4のいずれか一項において、
前記活物質層は、非晶質シリコン、微結晶シリコン、多結晶シリコン又はこれらの組み合わせからなることを特徴とする二次電池用負極。 - 請求項1乃至5のいずれか一項において、
前記突起部は、アスペクト比が0.2以上2000以下であることを特徴とする二次電池用負極。 - 請求項1乃至6のいずれか一項において、
前記突起部の形状は、柱状、円錐状、又は板状であることを特徴とする二次電池用負極。 - 請求項1乃至7のいずれか一項において、
前記突起部の先端に保護層を有することを特徴とする二次電池用負極。 - 請求項1乃至8のいずれか一項に記載の二次電池用負極を有する二次電池。
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010239122A (ja) * | 2009-03-09 | 2010-10-21 | Semiconductor Energy Lab Co Ltd | 蓄電デバイス |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219392A (ja) * | 2009-03-18 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 電気化学キャパシタ |
| JP2010219030A (ja) * | 2009-02-19 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 蓄電デバイス |
| JP2010262860A (ja) * | 2009-05-08 | 2010-11-18 | Panasonic Corp | リチウムイオン電池 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050064291A1 (en) * | 2003-09-18 | 2005-03-24 | Matsushita Electric Industrial Co., Ltd. | Battery and non-aqueous electrolyte secondary battery using the same |
| JP5181413B2 (ja) * | 2005-09-13 | 2013-04-10 | 日立電線株式会社 | 電気化学装置用電極、固体電解質/電極接合体及びその製造方法 |
| CN101821893A (zh) * | 2007-05-25 | 2010-09-01 | 麻省理工学院 | 电池及其所用的电极 |
| JP5479775B2 (ja) * | 2009-05-08 | 2014-04-23 | 古河電気工業株式会社 | リチウムイオン二次電池用の負極およびその製造方法 |
| US20110294005A1 (en) * | 2010-05-28 | 2011-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and electric device |
-
2013
- 2013-02-19 US US13/769,855 patent/US20130236781A1/en not_active Abandoned
- 2013-02-22 JP JP2013032996A patent/JP6134533B2/ja not_active Expired - Fee Related
- 2013-03-06 CN CN2013100702832A patent/CN103311554A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219030A (ja) * | 2009-02-19 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 蓄電デバイス |
| JP2010219392A (ja) * | 2009-03-18 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 電気化学キャパシタ |
| JP2010262860A (ja) * | 2009-05-08 | 2010-11-18 | Panasonic Corp | リチウムイオン電池 |
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| CN103311554A (zh) | 2013-09-18 |
| JP6134533B2 (ja) | 2017-05-24 |
| US20130236781A1 (en) | 2013-09-12 |
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