JP2013210215A - 慣性センサモジュール - Google Patents
慣性センサモジュール Download PDFInfo
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- JP2013210215A JP2013210215A JP2012078877A JP2012078877A JP2013210215A JP 2013210215 A JP2013210215 A JP 2013210215A JP 2012078877 A JP2012078877 A JP 2012078877A JP 2012078877 A JP2012078877 A JP 2012078877A JP 2013210215 A JP2013210215 A JP 2013210215A
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Abstract
【解決手段】 慣性センサモジュールにおいて、第1のパッド群(120)と、第1のパッド群と電気的に接続され前記第1のパッド群に対し90度回転した位置に設けられる第2のパッド群(130)とを設け、検出軸を持つ第1のセンサ素子(100)と、第1のセンサ素子を制御するLSI(202)と、を有し、第1のセンサ素子は、LSIの第1の辺に沿って設け、LSIの第1の辺と交差する第2の辺に沿って複数の第3のパッド群(203)を設け、第3のパッド群を、第1のパッド群または第2のパッド群のいずれか一方と電気的に接続する。
【選択図】 図3
Description
つまり、慣性センサモジュールであって、第1のパッド群と、第1のパッド群と電気的に接続され第1のパッド群に対し90度回転した位置に設けられる第2のパッド群とを有し、検出軸を持つ第1のセンサ素子と、第1のセンサ素子を制御するLSIを有し、第1のセンサ素子は、LSIの第1の辺に沿って設けられ、LSIは、第1の辺と交差する第2の辺に沿って複数の第3のパッド群を有し、第3のパッド群は、第1のパッド群または第2のパッド群のいずれか一方と電気的に接続されることを特徴とする。
図1は、実施例1における角速度センサ素子を示す上面図である。センサ素子100は、支持基板と、MEMS構造体の設置された空間を気密保護するキャップ101と、MEMS構造体の運動を制御するための電気信号やMEMS構造体の運動により発生する電気信号を引き出すための配線103と、これらの電気信号を入出力するためのパッド群120、130から構成される。MEMS構造体はキャップ101の内部に設けられているため図1には図示されず、例えばフォトリソグラフィ技術とDRIE(Deep Reactive Ion Etching)技術を用いて形成することができる構造体である。
図2は、実施例1における角速度センサモジュールの角速度を検出するためのMEMS構造体が形成された、センサ素子100の詳細を示す断面図である。図1中に示したA−A´直線による断面が図2に相当している。センサ素子100は、絶縁膜108、検出電極を形成する金属膜106、および絶縁膜109が形成された支持基板107と、絶縁膜112、MEMS構造体の可動部105、およびMEMS構造体の固定部104が形成されたキャップ基板101とを、接着層110を介して貼りあわせた構造である。支持基板107とキャップ基板101は、共晶接合を用いて貼りあわされており、MEMS構造体が設置された内部空間111は気密保護されている。
図3(a)は、実施例1における角速度センサモジュール200の実装構成例を示す上面図である。
図3(b)は、実施例1における角速度センサモジュール200の、図3(a)とは異なる実装構成例を示す上面図である。
図4は、実施例1における角速度センサモジュール200の実装構成例を示す断面図である。図3(a)中に示したB−B´直線による断面が図4に相当する。
ここで、本実施例に係るセンサモジュールの構成および効果について説明する、本実施例に係る慣性センサモジュールは、第1のパッド群(120)と、第1のパッド群と電気的に接続され前記第1のパッド群に対し90度回転した位置に設けられる第2のパッド群(130)とを有し、検出軸を持つ第1のセンサ素子(100)と、第1のセンサ素子を制御するLSI(202)と、を有し、第1のセンサ素子は、LSIの第1の辺に沿って設けられ、LSIは、第1の辺と交差する第2の辺に沿って複数の第3のパッド群(203)を有し、第3のパッド群は、第1のパッド群または第2のパッド群のいずれか一方と電気的に接続されることを特徴とする。
図5は、実施例2における角速度センサ素子を示す上面図である。但し、図示の都合上絶縁膜512を省略している。センサ素子500は、支持基板と、MEMS構造体の設置された空間を気密保護するキャップ基板と、MEMS構造体の運動を制御するための電気信号や、MEMS構造体の運動により発生する電気信号を引き出すための配線と、入出力するためのパッド群520、530から構成される。
図6は、センサ素子500の詳細を示す断面図である。図5中に示したC−C´直線による断面が図6に相当している。但し、図を見やすくするため、図6においては、基板貫通部501、パッド502、およびこれらの下部構造の大きさを図5の図示より拡張して図示している。
図7は、実施例3における慣性センサモジュール600の実装構成例を示す上面図である。
図8は、実施例2における慣性センサモジュール600の、図7とは異なる実装構成例を示す上面図である。
図9は、実施例2における慣性センサモジュール600の実装構成例を示す断面図である。図7中に示したD−D´直線による断面が図9に相当する。
101 キャップ
102 パッド
102a パッド
102b パッド
103 配線
104 固定部
105 可動部
106 検出電極
107 基板
108 絶縁膜
109 絶縁膜
110 接着層
111 内部空間
112 絶縁膜
120 パッド
130 パッド
200 センサモジュール
201 パッケージ
202 演算回路チップ
203 パッド
204 配線
205 パッド
206 配線
207 パッド
208 端子
209 リッド
500 センサ素子
501 基板貫通部
502 パッド
502a パッド
502b パッド
503 配線
504 固定部
505 可動部
506 検出電極
507 基板
508 絶縁膜
509 絶縁膜
510 金属膜
511 内部空間
512 絶縁膜
513 基板
514 基板
520 パッド
530 パッド
540 センサ素子
550 昇圧電源チップ
600 センサモジュール
601 パッケージ
602 演算回路チップ
603 パッド
604 配線
605 パッド
606 配線
607 パッド
608 パッド
609 配線
610 端子
613 樹脂キャップ
614 金属。
Claims (7)
- 第1のパッド群と、前記第1のパッド群と電気的に接続され前記第1のパッド群に対し90度回転した位置に設けられる第2のパッド群とを有し、検出軸を持つ第1のセンサ素子と、
前記第1のセンサ素子を制御するLSIを有し、
前記第1のセンサ素子は、前記LSIの第1の辺に沿って設けられ、
前記LSIは、前記第1の辺と交差する第2の辺に沿って複数の第3のパッド群を有し、
前記第3のパッド群は、前記第1のパッド群または前記第2のパッド群のいずれか一方と電気的に接続されることを特徴とする慣性センサモジュール。 - 請求項1において、
前記第1のパッド群と、前記第2のパッド群とを接続する複数の配線をさらに有し、
前記複数の配線は、単一の導電層に形成されることを特徴とする慣性センサモジュール。 - 請求項1において、
前記第1のパッド群と、前記第2のパッド群とを接続する複数の配線をさらに有し、
前記複数の配線は、複数の導電材料を用いて形成されることを特徴とする慣性センサモジュール。 - 請求項1において、
前記第1のパッド群におけるパッドの配列と、前記第2のパッド群におけるパッドの配列とは同一であることを特徴とする慣性センサモジュール。 - 請求項1において、
前記第1のパッド群は、一対で所定の機能を発揮する第1のパッド対を含み、
前記第2のパッド群は、一対で前記所定の機能を発揮する第2のパッド対を含み、
前記第1のパッド群における前記第1のパッド対の配列と、前記第2のパッド群における前記第2のパッド対の配列とは、同一であることを特徴とする慣性センサモジュール。 - 請求項1において、
前記第1のセンサ素子の測定する物理量が角速度であることを特徴とする慣性センサモジュール。 - 請求項6において、
加速度を検出し、前記LSIにおいて前記第1の辺と対向する第3の辺に沿って設けられる第2のセンサ素子をさらに有することを特徴とする慣性センサモジュール。
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JP2012078877A JP2013210215A (ja) | 2012-03-30 | 2012-03-30 | 慣性センサモジュール |
PCT/JP2013/051519 WO2013145828A1 (ja) | 2012-03-30 | 2013-01-25 | 慣性センサモジュール |
DE112013001779.2T DE112013001779T5 (de) | 2012-03-30 | 2013-01-25 | Trägheitssensormodul |
US14/381,827 US20150040670A1 (en) | 2012-03-30 | 2013-01-25 | Inertial Sensor Module |
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US (1) | US20150040670A1 (ja) |
JP (1) | JP2013210215A (ja) |
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EP3156536A4 (en) * | 2014-06-16 | 2018-06-20 | Qingdao Haier Washing Machine Co., Ltd. | Method for detecting imbalance of washing machine, and washing machine |
JP6372361B2 (ja) * | 2015-01-16 | 2018-08-15 | 株式会社デンソー | 複合センサ |
JP6718401B2 (ja) * | 2017-03-09 | 2020-07-08 | 日立オートモティブシステムズ株式会社 | Memsセンサ |
JP2023050622A (ja) * | 2021-09-30 | 2023-04-11 | セイコーエプソン株式会社 | 慣性センサーモジュール |
Citations (7)
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JP2003156511A (ja) * | 2001-09-04 | 2003-05-30 | Sumitomo Metal Ind Ltd | 可動構造部を有する微小構造体 |
JP2003202226A (ja) * | 2002-01-07 | 2003-07-18 | Murata Mfg Co Ltd | 外力計測装置 |
JP2005169541A (ja) * | 2003-12-10 | 2005-06-30 | Hitachi Metals Ltd | 半導体装置およびその製造方法 |
JP2009130056A (ja) * | 2007-11-21 | 2009-06-11 | Panasonic Electric Works Co Ltd | 半導体素子の実装構造 |
JP2009168777A (ja) * | 2008-01-21 | 2009-07-30 | Hitachi Ltd | 慣性センサ |
JP2010139430A (ja) * | 2008-12-12 | 2010-06-24 | Yamaha Corp | 半導体装置 |
JP2011209060A (ja) * | 2010-03-29 | 2011-10-20 | Denso Corp | 加速度センサ、及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2003240797A (ja) * | 2002-02-18 | 2003-08-27 | Mitsubishi Electric Corp | 半導体加速度センサ |
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2012
- 2012-03-30 JP JP2012078877A patent/JP2013210215A/ja active Pending
-
2013
- 2013-01-25 DE DE112013001779.2T patent/DE112013001779T5/de not_active Ceased
- 2013-01-25 WO PCT/JP2013/051519 patent/WO2013145828A1/ja active Application Filing
- 2013-01-25 US US14/381,827 patent/US20150040670A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003156511A (ja) * | 2001-09-04 | 2003-05-30 | Sumitomo Metal Ind Ltd | 可動構造部を有する微小構造体 |
JP2003202226A (ja) * | 2002-01-07 | 2003-07-18 | Murata Mfg Co Ltd | 外力計測装置 |
JP2005169541A (ja) * | 2003-12-10 | 2005-06-30 | Hitachi Metals Ltd | 半導体装置およびその製造方法 |
JP2009130056A (ja) * | 2007-11-21 | 2009-06-11 | Panasonic Electric Works Co Ltd | 半導体素子の実装構造 |
JP2009168777A (ja) * | 2008-01-21 | 2009-07-30 | Hitachi Ltd | 慣性センサ |
JP2010139430A (ja) * | 2008-12-12 | 2010-06-24 | Yamaha Corp | 半導体装置 |
JP2011209060A (ja) * | 2010-03-29 | 2011-10-20 | Denso Corp | 加速度センサ、及びその製造方法 |
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WO2013145828A1 (ja) | 2013-10-03 |
DE112013001779T5 (de) | 2015-01-15 |
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