JP2013207103A - 化合物半導体装置及びその製造方法 - Google Patents
化合物半導体装置及びその製造方法 Download PDFInfo
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- JP2013207103A JP2013207103A JP2012075004A JP2012075004A JP2013207103A JP 2013207103 A JP2013207103 A JP 2013207103A JP 2012075004 A JP2012075004 A JP 2012075004A JP 2012075004 A JP2012075004 A JP 2012075004A JP 2013207103 A JP2013207103 A JP 2013207103A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 68
- 239000010410 layer Substances 0.000 description 259
- 230000001629 suppression Effects 0.000 description 78
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 62
- 239000007789 gas Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OTVPWGHMBHYUAX-UHFFFAOYSA-N [Fe].[CH]1C=CC=C1 Chemical compound [Fe].[CH]1C=CC=C1 OTVPWGHMBHYUAX-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】化合物半導体装置の一態様には、基板11と、基板11上方に形成された電子走行層15及び電子供給層17と、電子供給層17上方に形成されたゲート電極19g、ソース電極19s及びドレイン電極19dと、が設けられている。更に、基板11と電子走行層15との間で、かつ平面視でゲート電極19gと重なる領域に位置し、Feがドーピングされてゲート電極19g下方の2次元電子ガス100を抑制するFeドーピング層14が設けられている。
【選択図】図1
Description
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
次に、第2の実施形態について説明する。第1の実施形態では、電子走行層15の下面近傍に微量のトラップが発生して特性に影響を及ぼすことがある。第2の実施形態では、このようなトラップの発生を抑制する。図4は、第2の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
次に、第3の実施形態について説明する。第2の実施形態では、2DEG抑制層14のソース電極19s側及びドレイン電極19d側の双方にトラップ抑制層31が設けられているが、いずれか一方のみに設けられていてもよい。図6は、第3の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
第4の実施形態は、GaN系HEMTを含む化合物半導体装置のディスクリートパッケージに関する。図8は、第4の実施形態に係るディスクリートパッケージを示す図である。
次に、第5の実施形態について説明する。第5の実施形態は、GaN系HEMTを含む化合物半導体装置を備えたPFC(Power Factor Correction)回路に関する。図9は、第5の実施形態に係るPFC回路を示す結線図である。
次に、第6の実施形態について説明する。第6の実施形態は、GaN系HEMTを含む化合物半導体装置を備えた電源装置に関する。図10は、第6の実施形態に係る電源装置を示す結線図である。
次に、第7の実施形態について説明する。第7の実施形態は、GaN系HEMTを含む化合物半導体装置を備えた高周波増幅器(高出力増幅器)に関する。図11は、第7の実施形態に係る高周波増幅器を示す結線図である。
基板と、
前記基板上方に形成された電子走行層及び電子供給層と、
前記電子供給層上方に形成されたゲート電極、ソース電極及びドレイン電極と、
前記基板と前記電子走行層との間で、かつ平面視で前記ゲート電極と重なる領域に位置し、Feがドーピングされて前記ゲート電極下方の2次元電子ガスを抑制するFeドーピング層と、
を有することを特徴とする化合物半導体装置。
前記Feドーピング層に、1×1017cm-3以上の濃度でFeがドーピングされていることを特徴とする付記1に記載の化合物半導体装置。
前記Feドーピング層に、2×1017cm-3以上の濃度でFeがドーピングされていることを特徴とする付記1に記載の化合物半導体装置。
前記Feドーピング層は、GaN層であることを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記基板と前記電子走行層との間で、かつ前記Feドーピング層よりも前記ソース電極側に位置し、Feが前記Feドーピング層よりも低濃度でドーピングされた第2のFeドーピング層を有することを特徴とする付記1乃至4のいずれか1項に記載の化合物半導体装置。
前記第2のFeドーピング層に、1×1017cm-3未満の濃度でFeがドーピングされていることを特徴とする付記5に記載の化合物半導体装置。
前記第2のFeドーピング層に、5×1016cm-3以下の濃度でFeがドーピングされていることを特徴とする付記5に記載の化合物半導体装置。
前記基板と前記電子走行層との間で、かつ前記Feドーピング層よりも前記ドレイン電極側に位置し、Feが前記Feドーピング層よりも低濃度でドーピングされた第3のFeドーピング層を有することを特徴とする付記1乃至7のいずれか1項に記載の化合物半導体装置。
前記第3のFeドーピング層に、1×1017cm-3未満の濃度でFeがドーピングされていることを特徴とする付記8に記載の化合物半導体装置。
前記第3のFeドーピング層に、5×1016cm-3以下の濃度でFeがドーピングされていることを特徴とする付記8に記載の化合物半導体装置。
前記電子走行層及び前記電子走行層は、GaN系材料を含むことを特徴とする付記1乃至10のいずれか1項に記載の化合物半導体装置。
付記1乃至11のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
付記1乃至11のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
基板上方に電子走行層及び電子供給層を形成する工程と、
前記電子供給層上方にゲート電極、ソース電極及びドレイン電極を形成する工程と、
を有し、
前記電子走行層を形成する工程の前に、前記基板上方に、平面視で前記ゲート電極と重なる領域に位置し、Feがドーピングされて前記ゲート電極下方の2次元電子ガスを抑制するFeドーピング層を形成する工程を有することを特徴とする化合物半導体装置の製造方法。
前記Feドーピング層に、1×1017cm-3以上の濃度でFeがドーピングされていることを特徴とする付記14に記載の化合物半導体装置の製造方法。
前記Feドーピング層は、GaN層であることを特徴とする付記14又は15に記載の化合物半導体装置の製造方法。
前記電子走行層を形成する工程の前に、前記基板上方に、前記Feドーピング層よりも前記ソース電極側に位置し、Feが前記Feドーピング層よりも低濃度でドーピングされた第2のFeドーピング層を形成する工程を有することを特徴とする付記14乃至16のいずれか1項に記載の化合物半導体装置の製造方法。
前記第2のFeドーピング層に、1×1017cm-3未満の濃度でFeがドーピングされていることを特徴とする付記17に記載の化合物半導体装置の製造方法。
前記電子走行層を形成する工程の前に、前記基板上方に、前記Feドーピング層よりも前記ドレイン電極側に位置し、Feが前記Feドーピング層よりも低濃度でドーピングされた第3のFeドーピング層を形成する工程を有することを特徴とする付記14乃至18のいずれか1項に記載の化合物半導体装置の製造方法。
前記第3のFeドーピング層に、1×1017cm-3未満の濃度でFeがドーピングされていることを特徴とする付記19に記載の化合物半導体装置の製造方法。
14:2DEG抑制層
15:電子走行層
17:電子供給層
19g:ゲート電極
19s:ソース電極
19d:ドレイン電極
31:トラップ抑制層
Claims (10)
- 基板と、
前記基板上方に形成された電子走行層及び電子供給層と、
前記電子供給層上方に形成されたゲート電極、ソース電極及びドレイン電極と、
前記基板と前記電子走行層との間で、かつ平面視で前記ゲート電極と重なる領域に位置し、Feがドーピングされて前記ゲート電極下方の2次元電子ガスを抑制するFeドーピング層と、
を有することを特徴とする化合物半導体装置。 - 前記Feドーピング層に、1×1017cm-3以上の濃度でFeがドーピングされていることを特徴とする請求項1に記載の化合物半導体装置。
- 前記Feドーピング層は、GaN層であることを特徴とする請求項1又は2に記載の化合物半導体装置。
- 前記基板と前記電子走行層との間で、かつ前記Feドーピング層よりも前記ソース電極側に位置し、Feが前記Feドーピング層よりも低濃度でドーピングされた第2のFeドーピング層を有することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。
- 前記第2のFeドーピング層に、1×1017cm-3未満の濃度でFeがドーピングされていることを特徴とする請求項4に記載の化合物半導体装置。
- 前記基板と前記電子走行層との間で、かつ前記Feドーピング層よりも前記ドレイン電極側に位置し、Feが前記Feドーピング層よりも低濃度でドーピングされた第3のFeドーピング層を有することを特徴とする請求項1乃至5のいずれか1項に記載の化合物半導体装置。
- 前記第3のFeドーピング層に、1×1017cm-3未満の濃度でFeがドーピングされていることを特徴とする請求項6に記載の化合物半導体装置。
- 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
- 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
- 基板上方に電子走行層及び電子供給層を形成する工程と、
前記電子供給層上方にゲート電極、ソース電極及びドレイン電極を形成する工程と、
を有し、
前記電子走行層を形成する工程の前に、前記基板上方に、平面視で前記ゲート電極と重なる領域に位置し、Feがドーピングされて前記ゲート電極下方の2次元電子ガスを抑制するFeドーピング層を形成する工程を有することを特徴とする化合物半導体装置の製造方法。
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