JP2013207053A - 固体撮像素子、電子機器 - Google Patents

固体撮像素子、電子機器 Download PDF

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Publication number
JP2013207053A
JP2013207053A JP2012073725A JP2012073725A JP2013207053A JP 2013207053 A JP2013207053 A JP 2013207053A JP 2012073725 A JP2012073725 A JP 2012073725A JP 2012073725 A JP2012073725 A JP 2012073725A JP 2013207053 A JP2013207053 A JP 2013207053A
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JP
Japan
Prior art keywords
film
antireflection film
refractive index
solid
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012073725A
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English (en)
Japanese (ja)
Other versions
JP2013207053A5 (enExample
Inventor
Yoshiaki Masuda
佳明 桝田
Keita Hondo
恵太 本渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012073725A priority Critical patent/JP2013207053A/ja
Priority to US13/781,246 priority patent/US9337364B2/en
Priority to CN2013100892540A priority patent/CN103367373A/zh
Publication of JP2013207053A publication Critical patent/JP2013207053A/ja
Publication of JP2013207053A5 publication Critical patent/JP2013207053A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Solid State Image Pick-Up Elements (AREA)
  • Surface Treatment Of Optical Elements (AREA)
JP2012073725A 2012-03-28 2012-03-28 固体撮像素子、電子機器 Pending JP2013207053A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012073725A JP2013207053A (ja) 2012-03-28 2012-03-28 固体撮像素子、電子機器
US13/781,246 US9337364B2 (en) 2012-03-28 2013-02-28 Solid-state imaging element and electronic apparatus
CN2013100892540A CN103367373A (zh) 2012-03-28 2013-03-20 固态成像元件和电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012073725A JP2013207053A (ja) 2012-03-28 2012-03-28 固体撮像素子、電子機器

Publications (2)

Publication Number Publication Date
JP2013207053A true JP2013207053A (ja) 2013-10-07
JP2013207053A5 JP2013207053A5 (enExample) 2015-04-16

Family

ID=49234491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012073725A Pending JP2013207053A (ja) 2012-03-28 2012-03-28 固体撮像素子、電子機器

Country Status (3)

Country Link
US (1) US9337364B2 (enExample)
JP (1) JP2013207053A (enExample)
CN (1) CN103367373A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176969A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置及び撮像システム
WO2016031592A1 (ja) * 2014-08-29 2016-03-03 ソニー株式会社 固体撮像装置、および電子装置
JP2018061060A (ja) * 2017-12-28 2018-04-12 キヤノン株式会社 固体撮像装置及び撮像システム

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015216187A (ja) * 2014-05-09 2015-12-03 ソニー株式会社 固体撮像素子および電子機器
JP2020126961A (ja) * 2019-02-06 2020-08-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像システム
TWI853915B (zh) * 2019-05-10 2024-09-01 日商索尼半導體解決方案公司 攝像元件及電子機器
EP4073840A1 (en) 2019-12-12 2022-10-19 Brolis Sensor Technology, UAB Solid-state device
JP7617905B2 (ja) * 2020-04-28 2025-01-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209235A (ja) * 2002-01-16 2003-07-25 Sony Corp 固体撮像素子及びその製造方法
JP2008192951A (ja) * 2007-02-07 2008-08-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2010283225A (ja) * 2009-06-05 2010-12-16 Panasonic Corp 固体撮像装置
JP2011124407A (ja) * 2009-12-11 2011-06-23 Sony Corp 固体撮像素子及びその製造方法
JP2011216623A (ja) * 2010-03-31 2011-10-27 Sony Corp 固体撮像装置、および、その製造方法、電子機器
WO2012004991A1 (ja) * 2010-07-09 2012-01-12 パナソニック株式会社 光検出器、光学ヘッド及び光情報装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041026A (ja) 2004-07-23 2006-02-09 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP5082855B2 (ja) * 2005-11-11 2012-11-28 株式会社ニコン 反射防止膜を有する固体撮像装置および表示装置並びにその製造方法
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
JP2011054904A (ja) * 2009-09-04 2011-03-17 Panasonic Corp 固体撮像体装置及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209235A (ja) * 2002-01-16 2003-07-25 Sony Corp 固体撮像素子及びその製造方法
JP2008192951A (ja) * 2007-02-07 2008-08-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2010283225A (ja) * 2009-06-05 2010-12-16 Panasonic Corp 固体撮像装置
JP2011124407A (ja) * 2009-12-11 2011-06-23 Sony Corp 固体撮像素子及びその製造方法
JP2011216623A (ja) * 2010-03-31 2011-10-27 Sony Corp 固体撮像装置、および、その製造方法、電子機器
WO2012004991A1 (ja) * 2010-07-09 2012-01-12 パナソニック株式会社 光検出器、光学ヘッド及び光情報装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176969A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置及び撮像システム
US10158817B2 (en) 2014-03-14 2018-12-18 Canon Kabushiki Kaisha Solid-state imaging apparatus and imaging system
WO2016031592A1 (ja) * 2014-08-29 2016-03-03 ソニー株式会社 固体撮像装置、および電子装置
US11004877B2 (en) 2014-08-29 2021-05-11 Sony Corporation Solid-state imaging device with phase difference detection pixel and electronic apparatus
JP2018061060A (ja) * 2017-12-28 2018-04-12 キヤノン株式会社 固体撮像装置及び撮像システム

Also Published As

Publication number Publication date
CN103367373A (zh) 2013-10-23
US9337364B2 (en) 2016-05-10
US20130258154A1 (en) 2013-10-03

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