JP2013191657A - 光電変換素子およびその製造方法 - Google Patents
光電変換素子およびその製造方法 Download PDFInfo
- Publication number
- JP2013191657A JP2013191657A JP2012055504A JP2012055504A JP2013191657A JP 2013191657 A JP2013191657 A JP 2013191657A JP 2012055504 A JP2012055504 A JP 2012055504A JP 2012055504 A JP2012055504 A JP 2012055504A JP 2013191657 A JP2013191657 A JP 2013191657A
- Authority
- JP
- Japan
- Prior art keywords
- type
- contact
- film
- amorphous
- impurity layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 180
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000012535 impurity Substances 0.000 claims abstract description 213
- 239000000758 substrate Substances 0.000 claims abstract description 178
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 132
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 114
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000002161 passivation Methods 0.000 abstract description 65
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 123
- 239000000463 material Substances 0.000 description 21
- 230000007246 mechanism Effects 0.000 description 21
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 12
- 229910017817 a-Ge Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012055504A JP2013191657A (ja) | 2012-03-13 | 2012-03-13 | 光電変換素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012055504A JP2013191657A (ja) | 2012-03-13 | 2012-03-13 | 光電変換素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013191657A true JP2013191657A (ja) | 2013-09-26 |
| JP2013191657A5 JP2013191657A5 (enrdf_load_stackoverflow) | 2015-03-19 |
Family
ID=49391637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012055504A Pending JP2013191657A (ja) | 2012-03-13 | 2012-03-13 | 光電変換素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013191657A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016140309A1 (ja) * | 2015-03-04 | 2016-09-09 | シャープ株式会社 | 光電変換素子およびその製造方法 |
| WO2017150671A1 (ja) * | 2016-03-04 | 2017-09-08 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
| CN114678434A (zh) * | 2021-12-28 | 2022-06-28 | 浙江爱旭太阳能科技有限公司 | 一种提高光电转换效率的异质结电池 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101240A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
| JP2009200267A (ja) * | 2008-02-21 | 2009-09-03 | Sanyo Electric Co Ltd | 太陽電池 |
| JP2010219527A (ja) * | 2009-03-17 | 2010-09-30 | Sharp Corp | バックコンタクト単一ヘテロ接合型太陽電池の製造方法及びバックコンタクト単一ヘテロ接合型太陽電池 |
| WO2012132595A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
-
2012
- 2012-03-13 JP JP2012055504A patent/JP2013191657A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101240A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
| JP2009200267A (ja) * | 2008-02-21 | 2009-09-03 | Sanyo Electric Co Ltd | 太陽電池 |
| JP2010219527A (ja) * | 2009-03-17 | 2010-09-30 | Sharp Corp | バックコンタクト単一ヘテロ接合型太陽電池の製造方法及びバックコンタクト単一ヘテロ接合型太陽電池 |
| WO2012132595A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016140309A1 (ja) * | 2015-03-04 | 2016-09-09 | シャープ株式会社 | 光電変換素子およびその製造方法 |
| WO2017150671A1 (ja) * | 2016-03-04 | 2017-09-08 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
| CN114678434A (zh) * | 2021-12-28 | 2022-06-28 | 浙江爱旭太阳能科技有限公司 | 一种提高光电转换效率的异质结电池 |
| CN114678434B (zh) * | 2021-12-28 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | 一种提高光电转换效率的异质结电池 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102939662B (zh) | 太阳能电池元件及其制造方法、以及太阳能电池模块 | |
| TW200910621A (en) | Solar cell, method of fabricating the same and apparatus for fabricating the same | |
| CN101097969A (zh) | 包括所有背面接触结构的光电器件以及相关处理 | |
| CN111769179A (zh) | 制造太阳能电池的发射极区域的方法 | |
| JP6404825B2 (ja) | 光電変換素子 | |
| KR20140040121A (ko) | 그래핀-기반 다중-접합 가요성 태양 전지 | |
| JP2013191656A (ja) | 光電変換素子およびその製造方法 | |
| JP2013165160A (ja) | 太陽電池の製造方法及び太陽電池 | |
| JP6032911B2 (ja) | 光電変換素子およびその製造方法 | |
| JP2013115262A (ja) | 光電変換素子 | |
| CN113224210A (zh) | 一种p型ibc电池的制备方法 | |
| JP2013191657A (ja) | 光電変換素子およびその製造方法 | |
| JP5884911B2 (ja) | 太陽電池の製造方法 | |
| JP2013214672A (ja) | 光電変換素子 | |
| CN113594295B (zh) | 一种双面钝化结构的太阳能电池制备方法 | |
| JPWO2015060013A1 (ja) | 光電変換素子 | |
| CN114497278A (zh) | 基于PECVD的TOPCon电池硼扩SE的制作方法 | |
| JP2013125890A (ja) | 光電変換素子およびその製造方法 | |
| JP2013125891A (ja) | 光電変換素子およびその製造方法 | |
| CN110943136A (zh) | 一种p型硅薄膜和太阳能电池及制备方法 | |
| JP5956742B2 (ja) | 光電変換素子 | |
| WO2013168515A1 (ja) | 光電変換装置およびその製造方法 | |
| CN115148832A (zh) | 一种N-TOPCon电池及其制作方法 | |
| TW202312507A (zh) | 鈍化接觸太陽能電池及其背面鈍化結構的製作方法 | |
| JP2013197158A (ja) | 光電変換素子およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150127 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150127 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151021 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151027 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160308 |