JP2013191601A - Substrate holding device and substrate holding method - Google Patents

Substrate holding device and substrate holding method Download PDF

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JP2013191601A
JP2013191601A JP2012054617A JP2012054617A JP2013191601A JP 2013191601 A JP2013191601 A JP 2013191601A JP 2012054617 A JP2012054617 A JP 2012054617A JP 2012054617 A JP2012054617 A JP 2012054617A JP 2013191601 A JP2013191601 A JP 2013191601A
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substrate
lift pin
peripheral
holding surface
holding
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JP5868228B2 (en
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Ken Aiba
健 相場
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Sumitomo Heavy Industries Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a substrate holding device which can bring a substrate into close contact with a holding surface without depending on deformation of the substrate due to its self-weight.SOLUTION: In a holding surface, at least three circumferential lift pins are distributed so as to surround the center of the holding surface. The circumferential lift pins can vertically move with respect to the holding surface and include suction holes for sucking a substrate at tips. An inner lift pin is arranged at a position surrounded by the circumferential lift pins. The inner lift pin can vertically move independently of the circumferential lift pins and includes a suction hole for sucking the substrate at a tip. A warpage detection device detects the direction of warpage of the substrate. A control device controls the vertical moving of the circumferential lift pins and the inner lift pin, and suction of the substrate by the holding surface. The control device determines whether the substrate projects upwardly or projects downwardly on the basis of the detection result of the warpage detection device, and controls the suction operation of the circumferential lift pins and the inner lift pin on the basis of the determination result.

Description

本発明は、基板を支持したリフトピンを下降させて、保持面に基板を吸着する基板保持装置及び基板保持方法に関する。   The present invention relates to a substrate holding apparatus and a substrate holding method for lowering a lift pin that supports a substrate and attracting the substrate to a holding surface.

半導体プロセスに用いられる露光装置、レーザアニール装置等に、半導体ウエハ(半導体基板)を吸着するステージが用いられる。複数のプロセスを経た基板には、反りが生じている場合が多い。基板に、凹型の反り(下方に向かって凸になる反り)が生じている場合、保持面への吸着時に、吸着領域が中心から外側へ移行する。このため、基板が保持面に密着し、その表面が平面になるように、反りが矯正される。   A stage for adsorbing a semiconductor wafer (semiconductor substrate) is used in an exposure apparatus, a laser annealing apparatus, or the like used in a semiconductor process. In many cases, a substrate that has undergone a plurality of processes is warped. When the substrate has a concave warp (a warp that protrudes downward), the suction region moves from the center to the outside during suction onto the holding surface. For this reason, the warpage is corrected so that the substrate comes into close contact with the holding surface and the surface thereof is flat.

基板に凸型の反り(上方に向かって凸になる反り)が生じている場合、保持面への吸着時に、吸着領域が外周部分から中心に向かって移行する。このため、基板の中心近傍で基板が保持面に密着することができず、盛り上がった形状になる。   When a convex warp (a warp convex upward) occurs on the substrate, the suction region moves from the outer peripheral portion toward the center during suction onto the holding surface. For this reason, the substrate cannot be brought into close contact with the holding surface in the vicinity of the center of the substrate, resulting in a raised shape.

特許文献1に開示された基板保持装置においては、リフトピンが基板の縁に近い位置に設けられる。凸型の反りを有する基板を、縁に近い位置に配置されたリフトピンで支持すると、基板の自重により、基板が凹型に変形する。これにより、基板を保持面に密着させることができる。   In the substrate holding device disclosed in Patent Document 1, lift pins are provided at positions close to the edge of the substrate. When a substrate having a convex warp is supported by lift pins arranged at positions close to the edge, the substrate is deformed into a concave shape by its own weight. Thereby, a board | substrate can be stuck to a holding surface.

特開2003−45944号公報JP 2003-45944 A

基板の寸法及び厚さによっては、凸型の反りを有する基板を、縁の近傍に配置されたリフトピンで支持しても、自重のみでは凹型に変形しない場合がある。
本発明の目的は、基板の自重による変形に依存せず、基板を保持面に密着させることができる基板保持装置及び基板保持方法を提供することである。
Depending on the size and thickness of the substrate, even if a substrate having a convex warp is supported by lift pins arranged in the vicinity of the edge, the substrate may not be deformed into a concave shape only by its own weight.
An object of the present invention is to provide a substrate holding apparatus and a substrate holding method capable of bringing a substrate into close contact with a holding surface without depending on deformation due to its own weight.

本発明の一観点によれば、
基板を吸着して保持する保持面と、
前記保持面内に、前記保持面の中心を取り囲むように分布し、前記保持面に対して昇降可能であり、先端に、基板を吸引する吸引孔が開口している少なくとも3個の周縁リフトピンと、
前記周縁リフトピンに取り囲まれる位置に配置され、前記周縁リフトピンとは独立して昇降可能であり、先端に、基板を吸引する吸引孔が開口している内側リフトピンと、
保持すべき基板の反りの方向を検出する反り検出装置と、
前記周縁リフトピン及び前記内側リフトピンの昇降、及び前記保持面による前記基板の吸着を制御するとともに、前記反り検出装置の検出結果に基づいて、基板が上方に向かって凸か下方に向かって凸かを判定し、判定結果に基づいて前記周縁リフトピンと前記内側リフトピンとの吸引動作を制御する制御装置と
を有する基板保持装置が提供される。
According to one aspect of the present invention,
A holding surface for sucking and holding the substrate;
At least three peripheral lift pins that are distributed in the holding surface so as to surround the center of the holding surface, are movable up and down with respect to the holding surface, and have suction holes that suck the substrate at the tip. ,
An inner lift pin that is disposed at a position surrounded by the peripheral lift pin, can be moved up and down independently of the peripheral lift pin, and has a suction hole that sucks the substrate at the tip.
A warpage detection device for detecting the direction of warpage of the substrate to be held;
While controlling the raising and lowering of the peripheral lift pins and the inner lift pins and the adsorption of the substrate by the holding surface, it is determined whether the substrate is convex upward or downward based on the detection result of the warp detection device. There is provided a substrate holding device having a control device that determines and controls a suction operation of the peripheral lift pin and the inner lift pin based on the determination result.

本発明の他の観点によると、
基板を吸着して保持する保持面と、
前記保持面内に、前記保持面の中心を取り囲むように分布し、前記保持面に対して昇降可能であり、先端に、基板を吸引する吸引孔が開口している少なくとも3個の周縁リフトピンと、
前記周縁リフトピンに取り囲まれる位置に配置され、前記周縁リフトピンとは独立して昇降可能であり、先端に、基板を吸引する吸引孔が開口している内側リフトピンと、
保持すべき基板の反りの方向を検出する反り検出装置と
を有する基板保持装置の前記保持面に基板を保持する方法であって、
前記保持面の上方に基板を配置する工程と、
前記周縁リフトピン及び前記内側リフトピンを上昇させて、前記基板を、前記周縁リフトピン及び前記内側リフトピンの先端で支持する工程と、
前記基板が上方に向かって凸になるように反っている場合には、前記内側リフトピンで前記基板を吸引し、前記周縁リフトピンでは前記基板を吸引しない状態にして、前記基板を前記保持面まで下降させ、前記保持面に吸着させる工程と、
前記基板が下方に向かって凸になるように反っている場合には、前記周縁リフトピンで前記基板を吸引した状態にして、前記基板を前記保持面まで下降させ、前記周縁リフトピンの先端を外方に向かって変位させると共に、前記基板を前記保持面に吸着する工程と
を有する基板保持方法が提供される。
According to another aspect of the invention,
A holding surface for sucking and holding the substrate;
At least three peripheral lift pins that are distributed in the holding surface so as to surround the center of the holding surface, are movable up and down with respect to the holding surface, and have suction holes that suck the substrate at the tip. ,
An inner lift pin that is disposed at a position surrounded by the peripheral lift pin, can be moved up and down independently of the peripheral lift pin, and has a suction hole that sucks the substrate at the tip.
A method of holding a substrate on the holding surface of a substrate holding device having a warp detection device that detects a direction of warpage of the substrate to be held,
Disposing a substrate above the holding surface;
Raising the peripheral lift pins and the inner lift pins and supporting the substrate at the tips of the peripheral lift pins and the inner lift pins;
When the substrate is warped so as to be convex upward, the substrate is sucked by the inner lift pin and the substrate is not sucked by the peripheral lift pin, and the substrate is lowered to the holding surface. And adsorbing to the holding surface;
When the substrate is warped so as to protrude downward, the substrate is sucked by the peripheral lift pin, the substrate is lowered to the holding surface, and the tip of the peripheral lift pin is moved outward. And a step of adsorbing the substrate to the holding surface.

基板が上方に向かって凸か、下方に向かって凸かの判定結果に基づいて、周縁リフトピンと内側リフトピンとの吸引動作を制御する。これにより、基板を保持面に密着させることができる。   The suction operation of the peripheral lift pins and the inner lift pins is controlled based on the determination result of whether the substrate is convex upward or convex downward. Thereby, a board | substrate can be stuck to a holding surface.

図1Aは、実施例による基板保持装置の吸着ステージの平面図であり、図1Bの一点鎖線1B−1Bにおける概略断面図である。1A is a plan view of a suction stage of a substrate holding apparatus according to an embodiment, and is a schematic cross-sectional view taken along one-dot chain line 1B-1B in FIG. 1B. 図2は、実施例による基板保持装置の共通支持部材の平断面図である。FIG. 2 is a plan sectional view of a common support member of the substrate holding apparatus according to the embodiment. 図3A〜図3Cは、凸型の反りを有する基板を、実施例による基板保持方法で吸着する方法を説明するための吸着ステージ、リフトピン、及び基板の断面図である。3A to 3C are cross-sectional views of a suction stage, lift pins, and a substrate for explaining a method of sucking a substrate having a convex warp by a substrate holding method according to an embodiment. 図3D〜図3Fは、凸型の反りを有する基板を、実施例による基板保持方法で吸着する方法を説明するための吸着ステージ、リフトピン、及び基板の断面図である。3D to 3F are cross-sectional views of a suction stage, lift pins, and a substrate for explaining a method of sucking a substrate having a convex warp by a substrate holding method according to an embodiment. 図4A〜図4Cは、凹型の反りを有する基板を、実施例による基板保持方法で吸着する方法を説明するための吸着ステージ、リフトピン、及び基板の断面図である。4A to 4C are cross-sectional views of a suction stage, lift pins, and a substrate for explaining a method of sucking a substrate having a concave warp by a substrate holding method according to an embodiment. 図4D〜図4Fは、凹型の反りを有する基板を、実施例による基板保持方法で吸着する方法を説明するための吸着ステージ、リフトピン、及び基板の断面図である。4D to 4F are cross-sectional views of a suction stage, lift pins, and a substrate for explaining a method of sucking a substrate having a concave warp by a substrate holding method according to an embodiment. 図5A及び図5Bは、実施例の変形例1による周縁リフトピンの先端部分の正面図である。5A and 5B are front views of the tip portion of the peripheral lift pin according to the first modification of the embodiment. 図6は、実施例2の変形例2による基板保持装置の概略断面図である。FIG. 6 is a schematic cross-sectional view of a substrate holding device according to a second modification of the second embodiment.

図1Aに、実施例による基板保持装置に用いられる吸着ステージの平面図を示す。ほぼ円形の外形を有する吸着ステージ10の上面に、保持面11が画定されている。保持面11内に、複数の周縁リフトピン13と少なくとも1つの内側リフトピン14が分布している。周縁リフトピン13は、保持面11の中心を取り囲むように分布する。内側リフトピン14は、周縁リフトピン13に取り囲まれる。例えば、周縁リフトピン13の位置を頂
点とする多角形の内側に、内側リフトピン14が配置される。図1Aでは、3本の周縁リフトピン13を配置した例を示しているが、4本以上の周縁リフトピン13を配置してもよい。
FIG. 1A is a plan view of a suction stage used in the substrate holding apparatus according to the embodiment. A holding surface 11 is defined on the upper surface of the suction stage 10 having a substantially circular outer shape. A plurality of peripheral lift pins 13 and at least one inner lift pin 14 are distributed in the holding surface 11. The peripheral lift pins 13 are distributed so as to surround the center of the holding surface 11. The inner lift pin 14 is surrounded by the peripheral lift pin 13. For example, the inner lift pin 14 is arranged inside a polygon whose apex is the position of the peripheral lift pin 13. Although FIG. 1A shows an example in which three peripheral lift pins 13 are arranged, four or more peripheral lift pins 13 may be arranged.

保持面11に、複数の吸着孔12が形成されている。吸着孔12は、吸着ステージ10の内部に形成された吸引流路15により相互に連結されている。排気装置16が、制御装置20からの制御を受けて、吸引流路15内を排気する。吸引流路15内が排気されることにより、基板を保持面11に吸着することができる。   A plurality of suction holes 12 are formed in the holding surface 11. The suction holes 12 are connected to each other by a suction flow path 15 formed inside the suction stage 10. The exhaust device 16 exhausts the inside of the suction channel 15 under the control of the control device 20. By exhausting the inside of the suction channel 15, the substrate can be adsorbed to the holding surface 11.

図1Bに、図1Aの一点鎖線1B−1Bにおける断面図を示す。吸着ステージ10の保持面11に、吸着孔12が開口している。吸着孔12は、吸着ステージ10の内部に形成された吸引流路15に連結されている。吸着ステージ10に、厚さ方向に貫通する複数の貫通孔が形成されている。周縁リフトピン13及び内側リフトピン14が、これらの貫通孔内に挿入されている。   FIG. 1B is a cross-sectional view taken along one-dot chain line 1B-1B in FIG. 1A. A suction hole 12 is opened in the holding surface 11 of the suction stage 10. The suction hole 12 is connected to a suction flow path 15 formed inside the suction stage 10. A plurality of through holes penetrating in the thickness direction are formed in the suction stage 10. A peripheral lift pin 13 and an inner lift pin 14 are inserted into these through holes.

複数の周縁リフトピン13は、それぞれ変位機構26を介して共通支持部材25に支持されている。変位機構26には、例えばリニアアクチュエータが用いられる。保持面11の面内方向に関して、共通支持部材25と吸着ステージ10との相対位置は固定されている。変位機構26は、吸着ステージ10に対して、周縁リフトピン13を保持面11の半径方向に移動させる。   The plurality of peripheral lift pins 13 are each supported by a common support member 25 via a displacement mechanism 26. For the displacement mechanism 26, for example, a linear actuator is used. With respect to the in-plane direction of the holding surface 11, the relative position between the common support member 25 and the suction stage 10 is fixed. The displacement mechanism 26 moves the peripheral lift pin 13 in the radial direction of the holding surface 11 with respect to the suction stage 10.

周縁リフトピン昇降機構27が、共通支持部材25を吸着ステージ10に対して昇降させる。共通支持部材25が昇降することにより、周縁リフトピン13が吸着ステージ10に対して昇降する。内側リフトピン昇降機構28が、内側リフトピン14を吸着ステージ10に対して昇降させる。   The peripheral lift pin raising / lowering mechanism 27 raises / lowers the common support member 25 with respect to the suction stage 10. As the common support member 25 moves up and down, the peripheral lift pin 13 moves up and down with respect to the suction stage 10. The inner lift pin raising / lowering mechanism 28 raises / lowers the inner lift pin 14 with respect to the suction stage 10.

周縁リフトピン13及び内側リフトピン14内に、それぞれ吸引孔17、18が形成されている。吸引孔17、18は、それぞれ周縁リフトピン13及び内側リフトピン14の先端の端面に開口している。周縁リフトピン13に形成された吸引孔17内が、吸引路を介して周縁リフトピン用排気装置21により排気される。内側リフトピン14に形成された吸引孔18内が、吸引路を介して内側リフトピン用排気装置22により排気される。   Suction holes 17 and 18 are formed in the peripheral lift pin 13 and the inner lift pin 14, respectively. The suction holes 17 and 18 are opened at the end surfaces of the distal ends of the peripheral lift pin 13 and the inner lift pin 14, respectively. The suction hole 17 formed in the peripheral lift pin 13 is exhausted by the peripheral lift pin exhaust device 21 through the suction path. The inside of the suction hole 18 formed in the inner lift pin 14 is exhausted by the inner lift pin exhaust device 22 through the suction path.

圧力検出装置23が、周縁リフトピン用排気装置21によって排気されている吸引路内の圧力を測定する。他の圧力検出装置24が、内側リフトピン用排気装置22によって排気されている吸引路内の圧力を測定する。圧力の測定結果が、制御装置20に入力される。   The pressure detection device 23 measures the pressure in the suction path exhausted by the peripheral lift pin exhaust device 21. Another pressure detection device 24 measures the pressure in the suction path exhausted by the inner lift pin exhaust device 22. The pressure measurement result is input to the control device 20.

制御装置20が、変位機構26、周縁リフトピン昇降機構27、内側リフトピン昇降機構28、周縁リフトピン用排気装置21、及び内側リフトピン用排気装置22を制御する。   The control device 20 controls the displacement mechanism 26, the peripheral lift pin lifting mechanism 27, the inner lift pin lifting mechanism 28, the peripheral lift pin exhaust device 21, and the inner lift pin exhaust device 22.

図2に、共通支持部材25の平断面図を示す。共通支持部材25に、3本の周縁リフトピン13が支持されている。共通支持部材25内に、共通排気流路30が形成されている。共通排気流路30は、周縁リフトピン13内に形成された吸引孔13に連通している。周縁リフトピン用排気装置21が、共通排気流路30を介して、吸引孔17内を排気する。圧力検出装置23が、共通排気流路30内の圧力を検出する。周縁リフトピン昇降機構27が、共通支持部材25を昇降させる。   FIG. 2 is a plan sectional view of the common support member 25. Three peripheral lift pins 13 are supported on the common support member 25. A common exhaust passage 30 is formed in the common support member 25. The common exhaust flow path 30 communicates with the suction hole 13 formed in the peripheral lift pin 13. The peripheral lift pin exhaust device 21 exhausts the inside of the suction hole 17 through the common exhaust flow path 30. The pressure detection device 23 detects the pressure in the common exhaust passage 30. The peripheral lift pin raising / lowering mechanism 27 raises / lowers the common support member 25.

図3A〜図3Fを参照して、凸型に反った基板を吸着する方法について説明する。
図3Aに示すように、ロボットアーム33が基板32を吸着ステージ10の上方まで移
送する。周縁リフトピン13及び内側リフトピン14は、最も下降した位置に待機している。周縁リフトピン用排気装置21及び内側リフトピン用排気装置22は、動作中(「ON」)である。周縁リフトピン13及び内側リフトピン14の吸引孔17、18(図1B)の先端が開放されているため、圧力検出装置23、24で検出される吸引路内の圧力は、大気圧状態(「H」)である。排気装置16は作動していない(「OFF」状態である)。
With reference to FIGS. 3A to 3F, a method for adsorbing a substrate warped in a convex shape will be described.
As shown in FIG. 3A, the robot arm 33 transfers the substrate 32 to above the suction stage 10. The peripheral lift pin 13 and the inner lift pin 14 stand by at the lowest position. The peripheral lift pin exhaust device 21 and the inner lift pin exhaust device 22 are in operation ("ON"). Since the tips of the suction holes 17 and 18 (FIG. 1B) of the peripheral lift pin 13 and the inner lift pin 14 are open, the pressure in the suction path detected by the pressure detection devices 23 and 24 is the atmospheric pressure state (“H”). ). The exhaust device 16 is not operating (is in the “OFF” state).

図3Bに示すように、周縁リフトピン13及び内側リフトピン14を上昇させる。この動作は、図1A及び図1Bに示した制御装置20が周縁リフトピン昇降機構27及び内側リフトピン昇降機構28を制御することにより行われる。基板32が凸型であるため、内側リフトピン14に先立って、周縁リフトピン13の先端が基板32に接触する。周縁リフトピン13に形成された吸引孔17(図1B)の上端の開口部が基板32によって塞がれる。このため、周縁リフトピン13に形成された吸引孔17(図1B)の吸引路内の圧力が低下する。これにより、圧力検出装置23による圧力検出結果が負圧状態(「L」)になる。内側リフトピン14用の圧力検出装置24による圧力検出結果は大気圧状態のままである。内側リフトピン14用の圧力検出装置24よりも、周縁リフトピン13用の圧力検出装置23の方が、先に負圧状態になることにより、基板32の反りの向きが凸型であると判定することができる。この判定は、圧力検出装置23、24の検出結果に基づいて、制御装置20(図1B)が行う。   As shown in FIG. 3B, the peripheral lift pins 13 and the inner lift pins 14 are raised. This operation is performed by the control device 20 shown in FIGS. 1A and 1B controlling the peripheral lift pin lifting mechanism 27 and the inner lift pin lifting mechanism 28. Since the substrate 32 is convex, the tip of the peripheral lift pin 13 contacts the substrate 32 prior to the inner lift pin 14. The opening at the upper end of the suction hole 17 (FIG. 1B) formed in the peripheral lift pin 13 is closed by the substrate 32. For this reason, the pressure in the suction path of the suction hole 17 (FIG. 1B) formed in the peripheral lift pin 13 decreases. As a result, the pressure detection result by the pressure detection device 23 becomes a negative pressure state (“L”). The pressure detection result by the pressure detection device 24 for the inner lift pin 14 remains in the atmospheric pressure state. When the pressure detection device 23 for the peripheral lift pin 13 is in a negative pressure state earlier than the pressure detection device 24 for the inner lift pin 14, it is determined that the direction of warping of the substrate 32 is convex. Can do. This determination is performed by the control device 20 (FIG. 1B) based on the detection results of the pressure detection devices 23 and 24.

さらに、周縁リフトピン13及び内側リフトピン14を上昇させると、基板32がロボットアーム33から浮き上がり、周縁リフトピン13で支持される。基板32がロボットアーム33から浮き上がった後、ロボットアーム33を、基板32と吸着ステージ10との間から引き抜く。   Further, when the peripheral lift pins 13 and the inner lift pins 14 are raised, the substrate 32 is lifted from the robot arm 33 and supported by the peripheral lift pins 13. After the substrate 32 is lifted from the robot arm 33, the robot arm 33 is pulled out from between the substrate 32 and the suction stage 10.

図3Cに示すように、周縁リフトピン13の上昇を停止させ、内側リフトピン14のみを上昇させる。これにより、内側リフトピン14の先端が基板32に接触する。内側リフトピン14に形成された吸引孔18(図1B)の上端の開口部が基板32によって塞がれる。このため、内側リフトピン14用の圧力検出装置24による圧力検出結果が負圧状態(「L」)になる。   As shown in FIG. 3C, the lifting of the peripheral lift pins 13 is stopped, and only the inner lift pins 14 are raised. As a result, the tip of the inner lift pin 14 comes into contact with the substrate 32. The opening at the upper end of the suction hole 18 (FIG. 1B) formed in the inner lift pin 14 is closed by the substrate 32. For this reason, the pressure detection result by the pressure detection device 24 for the inner lift pin 14 is in a negative pressure state (“L”).

図3Dに示すように、周縁リフトピン用排気装置21の動作を停止させる(「OFF」にする)。内側リフトピン用の排気装置22は動作させたままである。このため、基板32は、その中心近傍において、内側リフトピン14により吸着された状態になる。周縁リフトピン13の先端と基板32との吸着状態は解除される。   As shown in FIG. 3D, the operation of the peripheral lift pin exhaust device 21 is stopped ("OFF"). The exhaust device 22 for the inner lift pin remains activated. For this reason, the board | substrate 32 will be in the state adsorb | sucked by the inner side lift pin 14 in the center vicinity. The suction state between the tip of the peripheral lift pin 13 and the substrate 32 is released.

図3Eに示すように、周縁リフトピン13及び内側リフトピン14を下降させる。基板32が凸型に反っているため、基板32の外周部分が吸着ステージ10に接触する。   As shown in FIG. 3E, the peripheral lift pins 13 and the inner lift pins 14 are lowered. Since the substrate 32 is warped in a convex shape, the outer peripheral portion of the substrate 32 contacts the suction stage 10.

図3Fに示すように、内側リフトピン14及び周縁リフトピン13をさらに下降させる。内側リフトピン14の先端に基板32が吸着されているため、基板32の中央部分が吸着ステージ10に引き寄せられる。このとき、基板32が変形して、徐々に平坦に近づく。基板32は、周縁リフトピン13の先端に吸着されていないため、基板32が平坦に近づくに従って、基板32の外周部分が外方に移動する。内側リフトピン14の先端に吸着されている基板32の背面が吸着ステージ10に接触した時点で、内側リフトピン14の下降を停止させる。   As shown in FIG. 3F, the inner lift pin 14 and the peripheral lift pin 13 are further lowered. Since the substrate 32 is adsorbed to the tip of the inner lift pin 14, the central portion of the substrate 32 is attracted to the adsorption stage 10. At this time, the substrate 32 is deformed and gradually becomes flat. Since the substrate 32 is not attracted to the tip of the peripheral lift pin 13, the outer peripheral portion of the substrate 32 moves outward as the substrate 32 approaches flat. When the back surface of the substrate 32 adsorbed on the tip of the inner lift pin 14 comes into contact with the adsorption stage 10, the lowering of the inner lift pin 14 is stopped.

その後、排気装置16を動作させ(「ON」状態にし)、基板32を保持面11に吸着する。図3Eに示したように凸型に反ったままで、基板32の外周近傍を吸着ステージ10に吸着してしまうと、基板32の内奥部に盛り上がりができてしまう。本実施例におい
ては、図3Dに示した段階で、周縁リフトピン13による吸着が解除されている。基板32の外周近傍が周縁リフトピン13に固定されていないため、基板32の内奥部での盛り上がりを防止することができる。
Thereafter, the exhaust device 16 is operated (“ON” state), and the substrate 32 is adsorbed to the holding surface 11. As shown in FIG. 3E, if the vicinity of the outer periphery of the substrate 32 is adsorbed to the adsorption stage 10 while being warped in a convex shape, the inner portion of the substrate 32 is raised. In this embodiment, the suction by the peripheral lift pins 13 is released at the stage shown in FIG. 3D. Since the vicinity of the outer periphery of the substrate 32 is not fixed to the peripheral lift pins 13, it is possible to prevent the swell at the inner back portion of the substrate 32.

次に、図4A〜図4Fを参照して、凹型に反った基板を吸着する方法について説明する。
図4Aに示すように、ロボットアーム33が基板32を吸着ステージ10の上方まで移送する。周縁リフトピン13、内側リフトピン14、周縁リフトピン用排気装置21、内側リフトピン用排気装置22、圧力検出装置23、24、及び排気装置16の動作状態は、図3Aに示した動作状態と同一である。
Next, with reference to FIGS. 4A to 4F, a method for adsorbing a substrate warped in a concave shape will be described.
As shown in FIG. 4A, the robot arm 33 transfers the substrate 32 to above the suction stage 10. The operation states of the peripheral lift pin 13, the inner lift pin 14, the peripheral lift pin exhaust device 21, the inner lift pin exhaust device 22, the pressure detection devices 23 and 24, and the exhaust device 16 are the same as the operation states shown in FIG. 3A.

図4Bに示すように、周縁リフトピン13及び内側リフトピン14を上昇させる。図3Bに示した場合とは逆に、内側リフトピン14の先端が周縁リフトピン13の先端よりも先に基板32に接触する。これにより、内側リフトピン14用の圧力検出装置24の圧力検出結果が負圧状態(「L」)になる。制御装置20(図1B)は、内側リフトピン14用の圧力検出装置24が、周縁リフトピン13用の圧力検出装置23よりも先に負圧状態になったことを検出したとき、基板32の反りの状態が凹型であると判定する。内側リフトピン14用の圧力検出装置24の検出結果が負圧状態になった時点で、内側リフトピン14の上昇を停止させる。   As shown in FIG. 4B, the peripheral lift pins 13 and the inner lift pins 14 are raised. Contrary to the case shown in FIG. 3B, the tip of the inner lift pin 14 contacts the substrate 32 before the tip of the peripheral lift pin 13. As a result, the pressure detection result of the pressure detection device 24 for the inner lift pin 14 becomes a negative pressure state (“L”). When the control device 20 (FIG. 1B) detects that the pressure detection device 24 for the inner lift pin 14 is in a negative pressure state before the pressure detection device 23 for the peripheral lift pin 13, the control device 20 (FIG. 1B) It is determined that the state is concave. When the detection result of the pressure detection device 24 for the inner lift pin 14 is in a negative pressure state, the ascent of the inner lift pin 14 is stopped.

図4Cに示すように、周縁リフトピン13のみを上昇させる。周縁リフトピン13の先端が基板32に接触すると、周縁リフトピン13用の圧力検出装置23の圧力検出結果が負圧状態になる。内側リフトピン14の先端が基板32に接触してから、周縁リフトピン13が基板32に接触するまでに、周縁リフトピン13が上昇した距離に基づいて、基板32の反りの程度を算出することができる。周縁リフトピン13の先端が基板32に接触した後、内側リフトピン14用の排気装置22の動作を停止させる。   As shown in FIG. 4C, only the peripheral lift pin 13 is raised. When the tip of the peripheral lift pin 13 comes into contact with the substrate 32, the pressure detection result of the pressure detection device 23 for the peripheral lift pin 13 becomes negative. The degree of warpage of the substrate 32 can be calculated based on the distance that the peripheral lift pin 13 is raised from when the tip of the inner lift pin 14 contacts the substrate 32 until the peripheral lift pin 13 contacts the substrate 32. After the tip of the peripheral lift pin 13 comes into contact with the substrate 32, the operation of the exhaust device 22 for the inner lift pin 14 is stopped.

図4Dに示すように、周縁リフトピン13及び内側リフトピン14を上昇させ、基板32をロボットアーム33から浮き上がらせる。その後、ロボットアーム33を基板32と吸着ステージ10との間から引き抜く。   As shown in FIG. 4D, the peripheral lift pins 13 and the inner lift pins 14 are raised, and the substrate 32 is lifted from the robot arm 33. Thereafter, the robot arm 33 is pulled out from between the substrate 32 and the suction stage 10.

図4Eに示すように、周縁リフトピン13及び内側リフトピン14を下降させる。基板32の中央近傍の底面が吸着ステージ10に接触する。   As shown in FIG. 4E, the peripheral lift pin 13 and the inner lift pin 14 are lowered. The bottom surface near the center of the substrate 32 contacts the suction stage 10.

図4Fに示すように、周縁リフトピン13を下降させると共に、外方に変位させる。これにより、基板32がほぼ平坦になり、吸着ステージ10に密着する。周縁リフトピン13の外方への変位量は、基板32の反りの程度から決定することができる。基板32の外周近傍が吸着ステージ10に密着した後、排気装置16を動作させる(「ON」にする)ことにより、基板32を保持面11に吸着する。周縁リフトピン13を吸着ステージ10の保持面11に対して垂直な方向に下降させると、基板32の外周部分が吸着ステージ10に密着すると同時に、基板32の内奥部が盛り上がってしまう。周縁リフトピン13を外方に移動させることにより、基板32の内奥部の盛り上がりを防止することができる。   As shown in FIG. 4F, the peripheral lift pin 13 is lowered and displaced outward. As a result, the substrate 32 becomes substantially flat and adheres to the suction stage 10. The outward displacement amount of the peripheral lift pin 13 can be determined from the degree of warpage of the substrate 32. After the vicinity of the outer periphery of the substrate 32 is in close contact with the suction stage 10, the exhaust device 16 is operated (turned “ON”), thereby attracting the substrate 32 to the holding surface 11. When the peripheral lift pin 13 is lowered in a direction perpendicular to the holding surface 11 of the suction stage 10, the outer peripheral portion of the substrate 32 comes into close contact with the suction stage 10 and the inner back portion of the substrate 32 rises. By moving the peripheral lift pins 13 outward, it is possible to prevent the inner portion of the substrate 32 from rising.

さらに、基板32の外周近傍を、周縁リフトピン13で吸引して吸着ステージ10に引き付けるため、吸着ステージ10の吸引力が弱くても、基板32の外周を吸着ステージ10に密着させることができる。   Furthermore, since the vicinity of the outer periphery of the substrate 32 is sucked by the peripheral lift pins 13 and attracted to the suction stage 10, the outer periphery of the substrate 32 can be brought into close contact with the suction stage 10 even if the suction force of the suction stage 10 is weak.

上述の実施例では、周縁リフトピン13用の圧力検出装置23及び内側リフトピン14用の圧力検出装置24により検出される圧力が大気圧状態から負圧状態に移行するタイミングにより、基板32の反りが凸型であるか凹型であるかを認識することができる。さら
に、周縁リフトピン13と内側リフトピン14との上昇距離の差に基づいて、反りの程度を算出することができる。このように、圧力検出装置23、24は、基板32の反りの方向及び反りの程度を検出するための「反り検出装置」としての役割を担う。
In the above-described embodiment, the warpage of the substrate 32 is convex due to the timing at which the pressure detected by the pressure detection device 23 for the peripheral lift pin 13 and the pressure detection device 24 for the inner lift pin 14 shifts from the atmospheric pressure state to the negative pressure state. Whether it is a mold or a concave mold can be recognized. Furthermore, the degree of warpage can be calculated based on the difference in the rising distance between the peripheral lift pin 13 and the inner lift pin 14. As described above, the pressure detection devices 23 and 24 serve as “warpage detection devices” for detecting the direction and degree of warpage of the substrate 32.

図5A及び図5Bに、実施例の変形例1による基板保持装置の周縁リフトピン13の先端の正面図を示す。周縁リフトピン13の先端13Bを、弾性部材13Aが支持している。吸引孔17は、弾性部材13A内を通って先端13Bの上面に開口する。   5A and 5B are front views of the front end of the peripheral lift pin 13 of the substrate holding device according to the first modification of the embodiment. The elastic member 13A supports the tip 13B of the peripheral lift pin 13. The suction hole 17 passes through the elastic member 13A and opens on the upper surface of the tip 13B.

図5A及び図5Bに、それぞれ図4E及び図4Fに示した段階の周縁リフトピン13の先端を示す。図5Aから図5Bの状態に至るまでに、基板32が平坦になるように変形するときに、先端13Bが基板32から外向き(図5A及び図5Bにおいて左向き)の力を受ける。この力によって弾性部材13Aが弾性変形することにより、周縁リフトピン13の先端13Bが、基板32の外方に向かって変位する。このため、アクチュエータを用いることなく、周縁リフトピン13の先端を外方に変位させることができる。   5A and 5B show the tips of the peripheral lift pins 13 at the stage shown in FIGS. 4E and 4F, respectively. When the substrate 32 is deformed so as to be flat from the state shown in FIG. 5A to the state shown in FIG. 5B, the tip 13B receives an outward force (leftward in FIGS. 5A and 5B) from the substrate 32. The elastic member 13 </ b> A is elastically deformed by this force, whereby the tip 13 </ b> B of the peripheral lift pin 13 is displaced toward the outside of the substrate 32. For this reason, the tip of the peripheral lift pin 13 can be displaced outward without using an actuator.

図6に、実施例の変形例2による基板保持装置の概略図を示す。変形例2においては、吸着ステージ10の上方に撮像装置35が配置されている。ロボットアーム33が基板32を吸着ステージ10の上方に保持した状態で、撮像装置35が基板32の表面を撮像する。撮像装置35から制御装置20に画像データが入力される。制御装置20は、画像解析を行うことにより、基板32の反りの向きを判断する。変形例2では、撮像装置35が、基板32の反りを検出するための「反り検出装置」としての役割を担う。   FIG. 6 shows a schematic diagram of a substrate holding device according to a second modification of the embodiment. In the second modification, the imaging device 35 is disposed above the suction stage 10. The imaging device 35 images the surface of the substrate 32 while the robot arm 33 holds the substrate 32 above the suction stage 10. Image data is input from the imaging device 35 to the control device 20. The control device 20 determines the direction of warping of the substrate 32 by performing image analysis. In the second modification, the imaging device 35 plays a role as a “warpage detection device” for detecting the warpage of the substrate 32.

以上実施例に沿って本発明を説明したが、本発明はこれらに制限されるものではない。例えば、種々の変更、改良、組み合わせ等が可能なことは当業者に自明であろう。   Although the present invention has been described with reference to the embodiments, the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

10 吸着ステージ
11 保持面
12 吸着孔
13 周縁リフトピン
14 内側リフトピン
15 吸引流路
16 排気装置
17、18 吸引孔
20 制御装置
21 周縁リフトピン用排気装置
22 内側リフトピン用排気装置
23、24 圧力検出装置
25 共通支持部材
26 変位機構
27 周縁リフトピン昇降機構
28 内側リフトピン昇降機構
30 共通排気流路
32 基板
33 ロボットアーム
35 撮像装置
DESCRIPTION OF SYMBOLS 10 Adsorption stage 11 Holding surface 12 Adsorption hole 13 Peripheral lift pin 14 Inner lift pin 15 Suction passage 16 Exhaust device 17, 18 Suction hole 20 Control device 21 Exhaust device for peripheral lift pin 22 Exhaust device 23 for inner lift pin 23, Pressure detector 25 Common Support member 26 Displacement mechanism 27 Peripheral lift pin lifting mechanism 28 Inner lift pin lifting mechanism 30 Common exhaust flow path 32 Substrate 33 Robot arm 35 Imaging device

Claims (8)

基板を吸着して保持する保持面と、
前記保持面内に、前記保持面の中心を取り囲むように分布し、前記保持面に対して昇降可能であり、先端に、基板を吸引する吸引孔が開口している少なくとも3個の周縁リフトピンと、
前記周縁リフトピンに取り囲まれる位置に配置され、前記周縁リフトピンとは独立して昇降可能であり、先端に、基板を吸引する吸引孔が開口している内側リフトピンと、
保持すべき基板の反りの方向を検出する反り検出装置と、
前記周縁リフトピン及び前記内側リフトピンの昇降、及び前記保持面による前記基板の吸着を制御するとともに、前記反り検出装置の検出結果に基づいて、基板が上方に向かって凸か下方に向かって凸かを判定し、判定結果に基づいて前記周縁リフトピンと前記内側リフトピンとの吸引動作を制御する制御装置と
を有する基板保持装置。
A holding surface for sucking and holding the substrate;
At least three peripheral lift pins that are distributed in the holding surface so as to surround the center of the holding surface, are movable up and down with respect to the holding surface, and have suction holes that suck the substrate at the tip. ,
An inner lift pin that is disposed at a position surrounded by the peripheral lift pin, can be moved up and down independently of the peripheral lift pin, and has a suction hole that sucks the substrate at the tip.
A warpage detection device for detecting the direction of warpage of the substrate to be held;
While controlling the raising and lowering of the peripheral lift pins and the inner lift pins and the adsorption of the substrate by the holding surface, it is determined whether the substrate is convex upward or downward based on the detection result of the warp detection device. A substrate holding apparatus comprising: a control device that determines and controls suction operation of the peripheral lift pins and the inner lift pins based on the determination result.
前記反り検出装置の検出結果に基づいて、基板が上方に向かって凸になるように反っていると判定された場合、
前記制御装置は、
前記内側リフトピンの吸引孔で吸引を行い、前記周縁リフトピンの吸引孔では吸引を行わない状態で、前記内側リフトピン及び前記周縁リフトピンの先端で前記基板を保持し、
前記内側リフトピン及び前記周縁リフトピンを下降させて、前記基板を前記保持面に接触させ、
前記保持面によって前記基板を吸着させる請求項1に記載の基板保持装置。
Based on the detection result of the warp detection device, when it is determined that the substrate is warped to be convex upward,
The controller is
Holding the substrate at the tip of the inner lift pin and the peripheral lift pin in a state where the suction is performed at the suction hole of the inner lift pin, and the suction hole of the peripheral lift pin is not suctioned,
Lowering the inner lift pins and the peripheral lift pins to bring the substrate into contact with the holding surface,
The substrate holding apparatus according to claim 1, wherein the substrate is adsorbed by the holding surface.
さらに、
前記周縁リフトピンの先端を、前記内側リフトピンを中心として外方に変位させる変位機構を有し、
前記反り検出装置の検出結果に基づいて、基板が下方に向かって凸になるように反っていると判定された場合、
前記制御装置は、
前記周縁リフトピンで吸引を行っている状態で、前記内側リフトピン及び前記周縁リフトピンの先端で前記基板を保持し、
前記内側リフトピン及び前記周縁リフトピンを下降させて、前記基板を前記保持面に接触させ、
前記変位機構により、前記周縁リフトピンの先端を外方に変位させ、
前記保持面によって前記基板を吸着させる請求項1または2に記載の基板保持装置。
further,
A displacement mechanism for displacing the tip of the peripheral lift pin outwardly about the inner lift pin;
Based on the detection result of the warp detection device, when it is determined that the substrate is warped to be convex downward,
The controller is
In a state where suction is performed with the peripheral lift pin, the substrate is held at the tip of the inner lift pin and the peripheral lift pin,
Lowering the inner lift pins and the peripheral lift pins to bring the substrate into contact with the holding surface,
Displace the tip of the peripheral lift pin outward by the displacement mechanism,
The substrate holding apparatus according to claim 1, wherein the substrate is adsorbed by the holding surface.
前記変位機構は、前記周縁リフトピンの先端を支持する弾性部材を含み、前記弾性部材が弾性変形することにより、前記周縁リフトピンの先端を外方に変位させる請求項3に記載の基板保持装置。   The substrate holding apparatus according to claim 3, wherein the displacement mechanism includes an elastic member that supports a tip of the peripheral lift pin, and the elastic member is elastically deformed to displace the front end of the peripheral lift pin outward. 前記変位機構は、前記周縁リフトピンを外方に移動させるアクチュエータを含む請求項3に記載の基板保持装置。   The substrate holding apparatus according to claim 3, wherein the displacement mechanism includes an actuator that moves the peripheral lift pin outward. 前記反り検出装置は、前記保持面の上方に配置され、前記保持面上に位置する基板の表面を撮像する撮像装置を含む請求項1乃至5のいずれか1項に記載の基板保持装置。   6. The substrate holding device according to claim 1, wherein the warp detection device includes an imaging device that is disposed above the holding surface and images a surface of the substrate located on the holding surface. 7. 前記反り検出装置は、前記周縁リフトピンの吸引孔及び前記内側リフトピンの吸引孔内を排気する排気路の圧力検出装置を含み、
前記制御装置は、前記保持面の上方に配置された基板に向けて、前記周縁リフトピンと
前記内側リフトピンとを上昇させ、前記周縁リフトピンの吸引孔内を排気する排気路の圧力が低下する時期と、前記内側リフトピンの吸引孔内を排気する排気路の圧力が低下する時期とを比較することにより、前記基板の反りの状態を判定する請求項1乃至5のいずれか1項に記載の基板保持装置。
The warpage detection device includes a pressure detection device for an exhaust passage that exhausts the suction holes of the peripheral lift pins and the suction holes of the inner lift pins,
The control device raises the peripheral lift pin and the inner lift pin toward the substrate disposed above the holding surface, and a time when the pressure of the exhaust passage for exhausting the suction hole of the peripheral lift pin decreases. 6. The substrate holding according to claim 1, wherein the state of warping of the substrate is determined by comparing the time when the pressure of the exhaust passage exhausting the inside of the suction hole of the inner lift pin decreases. apparatus.
基板を吸着して保持する保持面と、
前記保持面内に、前記保持面の中心を取り囲むように分布し、前記保持面に対して昇降可能であり、先端に、基板を吸引する吸引孔が開口している少なくとも3個の周縁リフトピンと、
前記周縁リフトピンに取り囲まれる位置に配置され、前記周縁リフトピンとは独立して昇降可能であり、先端に、基板を吸引する吸引孔が開口している内側リフトピンと、
保持すべき基板の反りの方向を検出する反り検出装置と
を有する基板保持装置の前記保持面に基板を保持する方法であって、
前記保持面の上方に基板を配置する工程と、
前記周縁リフトピン及び前記内側リフトピンを上昇させて、前記基板を、前記周縁リフトピン及び前記内側リフトピンの先端で支持する工程と、
前記基板が上方に向かって凸になるように反っている場合には、前記内側リフトピンで前記基板を吸引し、前記周縁リフトピンでは前記基板を吸引しない状態にして、前記基板を前記保持面まで下降させ、前記保持面に吸着させる工程と、
前記基板が下方に向かって凸になるように反っている場合には、前記周縁リフトピンで前記基板を吸引した状態にして、前記基板を前記保持面まで下降させ、前記周縁リフトピンの先端を外方に向かって変位させると共に、前記基板を前記保持面に吸着する工程と
を有する基板保持方法。
A holding surface for sucking and holding the substrate;
At least three peripheral lift pins that are distributed in the holding surface so as to surround the center of the holding surface, are movable up and down with respect to the holding surface, and have suction holes that suck the substrate at the tip. ,
An inner lift pin that is disposed at a position surrounded by the peripheral lift pin, can be moved up and down independently of the peripheral lift pin, and has a suction hole that sucks the substrate at the tip.
A method of holding a substrate on the holding surface of a substrate holding device having a warp detection device that detects a direction of warpage of the substrate to be held,
Disposing a substrate above the holding surface;
Raising the peripheral lift pins and the inner lift pins and supporting the substrate at the tips of the peripheral lift pins and the inner lift pins;
When the substrate is warped so as to be convex upward, the substrate is sucked by the inner lift pin and the substrate is not sucked by the peripheral lift pin, and the substrate is lowered to the holding surface. And adsorbing to the holding surface;
When the substrate is warped so as to protrude downward, the substrate is sucked by the peripheral lift pin, the substrate is lowered to the holding surface, and the tip of the peripheral lift pin is moved outward. And a step of adsorbing the substrate to the holding surface.
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Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015064613A1 (en) * 2013-10-30 2015-05-07 株式会社ニコン Substrate-holding apparatus, exposure apparatus, and device manufacturing method
JP2015115418A (en) * 2013-12-10 2015-06-22 東芝機械株式会社 Vacuum chuck device and vertical precision machine including vacuum chuck device and dicing device
WO2015170208A1 (en) * 2014-05-03 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Film-like member support apparatus
WO2015174143A1 (en) * 2014-05-13 2015-11-19 住友電気工業株式会社 Semiconductor device manufacturing method
EP2993522A3 (en) * 2014-08-29 2016-08-31 Canon Kabushiki Kaisha Processing apparatus, processing method, and device manufacturing method
JP6066149B2 (en) * 2013-05-23 2017-01-25 株式会社ニコン Substrate holding method and apparatus, and exposure method and apparatus
JP2017224792A (en) * 2016-06-17 2017-12-21 東京エレクトロン株式会社 Substrate processing apparatus, jig for maintenance, maintenance method of substrate processing apparatus and storage medium
JP2017228696A (en) * 2016-06-23 2017-12-28 東京エレクトロン株式会社 Substrate mounting device and substrate mounting method
KR20180069381A (en) * 2016-12-15 2018-06-25 세메스 주식회사 Vacuum chuck supporting semiconductor substrate
KR20180106926A (en) * 2017-03-16 2018-10-01 캐논 가부시끼가이샤 Substrate holding apparatus, lithography apparatus, and method of manufacturing article
JP2018190815A (en) * 2017-05-01 2018-11-29 日本特殊陶業株式会社 Vacuum suction member
CN109597279A (en) * 2017-09-30 2019-04-09 上海微电子装备(集团)股份有限公司 Vacuum suction hand, substrate connection device and litho machine
US10310393B2 (en) 2015-06-22 2019-06-04 Asml Netherlands B.V. Substrate support, method of compensating unflatness of an upper surface of a substrate, lithographic apparatus and device manufacturing method
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WO2019244782A1 (en) * 2018-06-22 2019-12-26 東京エレクトロン株式会社 Substrate processing device, substrate processing method, and storage medium
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WO2023224285A1 (en) * 2022-05-19 2023-11-23 피에스케이홀딩스 (주) Substrate processing device provided with vacuum adsorption pin capable of controlling warpage and substrate processing method using same
WO2024025785A1 (en) * 2022-07-25 2024-02-01 Applied Materials, Inc. Advanced-packaging high-volume-mode digital-lithography-tool
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63261727A (en) * 1987-04-20 1988-10-28 Tokyo Electron Ltd Correcting method of surface distortion of plate
JPH0758191A (en) * 1993-08-13 1995-03-03 Toshiba Corp Wafer stage device
JP2003025174A (en) * 2001-07-11 2003-01-29 Nec Yamagata Ltd Substrate suction method and substrate suction mechanism
JP2003045944A (en) * 2001-07-27 2003-02-14 Canon Inc Substrate holding apparatus, method of delivering substrate, aligner using same, and method of manufacturing device
JP2004273965A (en) * 2003-03-12 2004-09-30 Tokyo Electron Ltd Substrate processing equipment
US20080068580A1 (en) * 2006-09-20 2008-03-20 Canon Kabushiki Kaisha Substrate-retaining unit
JP2008103703A (en) * 2006-09-20 2008-05-01 Canon Inc Substrate retaining unit, exposure apparatus provided with substrate retaining unit, and device manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63261727A (en) * 1987-04-20 1988-10-28 Tokyo Electron Ltd Correcting method of surface distortion of plate
JPH0758191A (en) * 1993-08-13 1995-03-03 Toshiba Corp Wafer stage device
JP2003025174A (en) * 2001-07-11 2003-01-29 Nec Yamagata Ltd Substrate suction method and substrate suction mechanism
JP2003045944A (en) * 2001-07-27 2003-02-14 Canon Inc Substrate holding apparatus, method of delivering substrate, aligner using same, and method of manufacturing device
JP2004273965A (en) * 2003-03-12 2004-09-30 Tokyo Electron Ltd Substrate processing equipment
US20080068580A1 (en) * 2006-09-20 2008-03-20 Canon Kabushiki Kaisha Substrate-retaining unit
JP2008103703A (en) * 2006-09-20 2008-05-01 Canon Inc Substrate retaining unit, exposure apparatus provided with substrate retaining unit, and device manufacturing method

Cited By (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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WO2015064613A1 (en) * 2013-10-30 2015-05-07 株式会社ニコン Substrate-holding apparatus, exposure apparatus, and device manufacturing method
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US10359707B2 (en) 2013-10-30 2019-07-23 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
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US20180173114A1 (en) * 2013-10-30 2018-06-21 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US9921490B2 (en) 2013-10-30 2018-03-20 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
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CN105830208B (en) * 2013-10-30 2019-07-16 株式会社尼康 Base plate keeping device, exposure device and device making method
EP3065165A4 (en) * 2013-10-30 2017-04-12 Nikon Corporation Substrate-holding apparatus, exposure apparatus, and device manufacturing method
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WO2015170208A1 (en) * 2014-05-03 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Film-like member support apparatus
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