TWI611504B - Plasma etching device, wafer lifting device and lifting method thereof - Google Patents
Plasma etching device, wafer lifting device and lifting method thereof Download PDFInfo
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- TWI611504B TWI611504B TW105133483A TW105133483A TWI611504B TW I611504 B TWI611504 B TW I611504B TW 105133483 A TW105133483 A TW 105133483A TW 105133483 A TW105133483 A TW 105133483A TW I611504 B TWI611504 B TW I611504B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
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Abstract
本發明揭露了一種等離子蝕刻設備、晶片頂升裝置及其頂升方法,利用第一頂升元件完成第一頂升階段,微型氣缸驅動頂桿元件上升頂起晶片,使晶片與靜電吸盤分離,利用第二頂升元件完成第二頂升階段,氣缸進一步驅動微型氣缸和頂桿元件將晶片頂升至設定距離。本發明採用微型氣缸來實現第一階段頂升過程,利用微型氣缸來調節頂桿的頂升高度和頂升速度,獲得相同的頂升時間和頂升力,微型氣缸的行程短,合理控制微型氣缸的進氣量可以實現輕柔穩定的頂升過程,防止晶片受損,微型氣缸的體積小,節省了空間,採用多個微型氣缸實現第一階段頂升,而利用一個氣缸實現第二階段頂升,更加靈活,且降低了成本,不需要採用氦氣,避免了晶片被污染的風險。The invention discloses a plasma etching equipment, a wafer lifting device and a lifting method thereof. A first lifting element is used to complete a first lifting stage, and a micro-cylinder drives the ejector element to lift and lift the wafer to separate the wafer from the electrostatic chuck. The second jacking stage is completed using the second jacking element, and the cylinder further drives the micro-cylinder and the ejector element to jack the wafer to a set distance. The invention adopts a micro cylinder to realize the first stage lifting process. The micro cylinder is used to adjust the jacking height and jacking speed of the ejector rod to obtain the same jacking time and jacking force. The stroke of the micro cylinder is short and the micro cylinder is reasonably controlled. The amount of air intake can achieve a gentle and stable jacking process to prevent damage to the wafer. The micro-cylinder is small and saves space. Multiple micro-cylinders are used to achieve the first stage of jacking, and one cylinder is used to achieve the second stage of jacking. It is more flexible and reduces the cost. It does not need to use helium and avoids the risk of wafer contamination.
Description
本發明有關於一種等離子蝕刻設備、晶片頂升裝置及其頂升方法。The invention relates to a plasma etching equipment, a wafer lifting device and a lifting method thereof.
在等離子體刻蝕設備中,靜電吸盤利用靜電將晶片牢牢吸附固定住,晶片被固定在靜電吸盤上進行相應的刻蝕操作,刻蝕操作完成後,需要將晶片取出進行後續制程。而只有當靜電荷被完全釋放後,靜電吸盤對晶片不再存在吸附力,此時才能利用頂升裝置將晶片從靜電吸盤上頂起。由於很難確保靜電荷是否完全被釋放,如果還殘存靜電荷,那就仍然存在局部的吸附力,因此在頂升晶片的時候,在頂升力和殘存吸附力的相互作用下,容易使晶片發生破損,所以需要設計一種智慧的頂升裝置,以確保晶片能夠被安全地頂升。In the plasma etching equipment, the electrostatic chuck uses static electricity to firmly adsorb and fix the wafer, and the wafer is fixed on the electrostatic chuck for a corresponding etching operation. After the etching operation is completed, the wafer needs to be taken out for subsequent processing. Only when the electrostatic charge is completely released, the electrostatic chuck no longer has an adsorption force on the wafer, and at this time, the wafer can be lifted from the electrostatic chuck by using a lifting device. Because it is difficult to ensure that the electrostatic charge is completely released, if there is still a static charge, there will still be a local adsorption force. Therefore, when the wafer is jacked up, it is easy for the wafer to occur under the interaction of the jacking force and the residual adsorption force. Broken, so a smart lifting device needs to be designed to ensure that the chip can be safely lifted.
通常來說,頂升過程包含兩個階段:第一頂升階段,將晶片頂升至0.5~3mm,使晶片與靜電吸盤分離;第二頂升階段,繼續將晶片頂升至9.5~15mm,以便機械手取走晶片。第一頂升階段是非常關鍵的,需要的頂升力較小,並且最好頂升力是可調節的,而頂升過程必須緩慢而輕柔,否則晶片受損的風險會很大。Generally speaking, the jacking process includes two stages: the first jacking stage, which lifts the wafer to 0.5 to 3 mm to separate the wafer from the electrostatic chuck; the second jacking stage, which continues to jack the wafer to 9.5 to 15 mm, So that the robot can remove the wafer. The first lifting stage is very critical. The required lifting force is small, and it is best that the lifting force is adjustable, and the lifting process must be slow and gentle, otherwise the risk of wafer damage will be great.
目前已經有多種頂升裝置和頂升方法應用在等離子體刻蝕設備中,例如:美國專利案US8628675B2中公開了一種頂升裝置,如第1圖所示,半導體晶片406放置在靜電吸盤404上,晶片406被頂升銷428頂起,頂升銷428連接在銷升降軛430上,銷升降軛430藉由導螺桿444連接馬達446,當需要頂升晶片時,馬達446驅動銷升降軛430帶動頂升銷428向上運動,將晶片406頂起,在頂升過程中,應變儀442即時檢測頂升力資料並傳輸給數位訊號處理器(DSP)450,馬達控制器452將控制訊號傳輸給馬達446,即時調整馬達的頂升力和頂升速度。採用這種方式,頂升力和頂升速度都可以得到快速而精確地調整,保證了頂升過程中晶片的安全,但是這種方式的系統複雜性較高,成本高昂。美國專利案US8628675B2中還公開了一種頂升裝置,利用兩個氣缸來實現頂升過程的兩個階段,如第2A圖所示,第一氣缸304中設置第一活塞301,第二氣缸305中設置第二活塞302,在第一頂升階段,如第2B圖所示,第二氣缸305進氣,第二活塞302向上運動,塞桿312向上頂升,同時帶動第一活塞301向上頂升,在第二頂升階段,如第2C圖所示,第一氣缸304進氣,第一活塞301向上運動,塞桿311向上頂升。採用這種頂升方式,需要兩個氣缸,佔據的空間太大,且大氣缸的調節精度不高。如第3圖所示,習知技術中還有一種方式,利用氦氣來實現第一頂升階段,採用氣缸206來實現第二頂升階段,藉由探測氦氣的流量和壓力資料可以判斷晶片第一階段的頂升是否成功,而藉由調節氣缸206的氣體流量來控制頂升速度和頂升高度。但是這種方法由於引入了氦氣,會對晶片造成污染,而且氦氣氣流會導致晶片偏移。At present, a variety of lifting devices and lifting methods have been applied to plasma etching equipment. For example, US patent US8628675B2 discloses a lifting device. As shown in FIG. 1, a semiconductor wafer 406 is placed on an electrostatic chuck 404. The wafer 406 is jacked by a jacking pin 428. The jacking pin 428 is connected to the pin lifting yoke 430. The pin lifting yoke 430 is connected to the motor 446 through the lead screw 444. When the wafer is required to be jacked, the motor 446 drives the pin lifting yoke 430. Drive the lifting pin 428 upward to lift the chip 406. During the lifting process, the strain gauge 442 detects the lifting force data in real time and transmits it to the digital signal processor (DSP) 450. The motor controller 452 transmits the control signal to the motor. 446. Adjust the lifting force and lifting speed of the motor in real time. In this way, both the lifting force and the lifting speed can be adjusted quickly and accurately to ensure the safety of the chip during the lifting process, but the system complexity and cost of this method are relatively high. The US patent case US8628675B2 also discloses a jacking device, which uses two cylinders to realize the two stages of the jacking process. As shown in FIG. 2A, the first cylinder 304 is provided with a first piston 301 and the second cylinder 305 is provided. A second piston 302 is provided. As shown in FIG. 2B, in the first lifting stage, the second cylinder 305 receives air, the second piston 302 moves upward, the plug 312 lifts upward, and at the same time drives the first piston 301 to lift upward. In the second lifting stage, as shown in FIG. 2C, the first cylinder 304 receives air, the first piston 301 moves upward, and the plug 311 lifts upward. Adopting this lifting method requires two cylinders, which takes up too much space, and the adjustment accuracy of large cylinders is not high. As shown in Figure 3, there is another way in the conventional technology, using helium to achieve the first jacking stage, and using cylinder 206 to achieve the second jacking stage. It can be judged by detecting the flow and pressure data of helium Whether the first stage of the wafer lifting is successful, and by adjusting the gas flow of the cylinder 206 to control the lifting speed and the lifting height. However, due to the introduction of helium in this method, the wafer will be contaminated, and the helium gas flow will cause the wafer to shift.
本發明提供一種等離子蝕刻設備、晶片頂升裝置及其頂升方法,可以實現穩定輕柔地頂升過程,避免晶片遭到損壞和污染,同時節省了空間,降低了成本,具有很強的靈活性和可操作性。The invention provides a plasma etching device, a wafer lifting device and a lifting method, which can realize a stable and gentle lifting process, avoid damage and pollution to the wafer, save space, reduce costs, and have strong flexibility. And operability.
為了達到上述目的,本發明提供一種晶片頂升裝置,設置在等離子體刻蝕腔體內,刻蝕腔體內設置有設備盤、設備盤上設置靜電吸盤,晶片吸附在靜電吸盤上,靜電吸盤和設備盤上都具有複數個通孔,設備盤上的通孔與靜電吸盤上的通孔形成導向通道,晶片頂升裝置包含:複數個第一頂升元件,其穿過導向通道設置在晶片下方,用於完成第一頂升階段,將晶片頂升至與靜電吸盤分離;第二頂升元件,其與所有的第一頂升元件機械連接,用於完成第二頂升階段,繼續將晶片頂升至設定距離;第一頂升組件包含:微型氣缸以及與微型氣缸連接的頂桿元件,微型氣缸藉由活塞驅動頂桿元件上升頂起晶片;第二頂升元件包含:氣缸以及連接氣缸和微型氣缸的複數個連接元件,氣缸利用氣缸活塞藉由連接元件進一步驅動微型氣缸和頂桿元件將晶片頂升至設定距離。In order to achieve the above object, the present invention provides a wafer lifting device, which is arranged in a plasma etching chamber, an equipment disc is arranged in the etching chamber, an electrostatic chuck is arranged on the equipment disc, the wafer is adsorbed on the electrostatic chuck, the electrostatic chuck and the equipment The disks each have a plurality of through-holes. The through-holes on the equipment disk and the through-holes on the electrostatic chuck form a guide channel. The wafer lifting device includes: a plurality of first lifting elements that pass through the guide channel and are arranged below the wafer. It is used to complete the first jacking stage, to lift the wafer to be separated from the electrostatic chuck; the second jacking element, which is mechanically connected to all the first jacking elements, is used to complete the second jacking stage, and to continue to lift the wafer. The first jacking component includes: a micro cylinder and a jack member connected to the micro cylinder. The micro cylinder drives the jack member to lift the wafer by a piston; the second jack includes a cylinder and a connecting cylinder and A plurality of connection elements of the micro-cylinder. The cylinder uses the cylinder piston to further drive the micro-cylinder and the ejector element through the connection element to lift the wafer to the setting. Away.
較佳地,微型氣缸設置在導向套中,可以沿著導向套的軸向上下移動,導向套固定設置在各導向通道的下方。Preferably, the micro-cylinder is arranged in the guide sleeve and can move up and down along the axial direction of the guide sleeve, and the guide sleeve is fixedly disposed below each guide channel.
較佳地,第一頂升組件的數量大於等於3個。Preferably, the number of the first jacking components is three or more.
較佳地,微型氣缸內設置有止動塊,止動塊阻止活塞繼續向上運動。Preferably, a stopper is provided in the miniature cylinder, and the stopper prevents the piston from continuing to move upward.
較佳地,止動塊的設置位置滿足以下條件:當活塞位於微型氣缸底部的初始位置時,止動塊的底面與活塞的頂面距離為H1=0.5至3mm。Preferably, the setting position of the stop block satisfies the following conditions: when the piston is located at the initial position of the bottom of the micro-cylinder, the distance between the bottom surface of the stop block and the top surface of the piston is H1 = 0.5 to 3 mm.
較佳地,頂桿元件,其設置在導向通道內,頂桿元件包含頂桿主體和設置在頂桿主體中的頂桿,頂桿主體的底部藉由波紋管與微型氣缸的頂部密封連接,頂桿藉由密封圈嵌設在頂桿主體的頂部,頂桿的底部固定連接微型氣缸的活塞,在活塞的帶動下,頂桿可以向上頂起,頂桿的頂端接觸晶片並將晶片頂起。Preferably, the ejector element is disposed in the guide channel, and the ejector element includes an ejector main body and an ejector rod provided in the ejector main body, and the bottom of the ejector main body is sealedly connected to the top of the microcylinder by a bellows. The ejector pin is embedded in the top of the ejector body through a seal ring. The bottom of the ejector pin is fixedly connected to the piston of the microcylinder. With the drive of the piston, the ejector pin can be lifted upward. The tip of the ejector pin contacts the wafer and ejects the wafer. .
較佳地,晶片頂升裝置更包含控制裝置,控制裝置包含:複數個推力探測器,其分別設置在各活塞底部,用於探測推力大小資料,推力探測器的數量與第一頂升組件的數量相同;複數個接觸探測器,其設置在晶片底部,分別位於頂桿上方,用於探測頂桿接觸到晶片的時間,接觸探測器的數量與第一頂升元件的數量相同;控制器,其電性連接各推力探測器、各接觸探測器和各微型氣缸,控制器實現對複數個第一頂升元件的同步控制,以保證各頂桿的推力相同,各頂桿接觸晶片的時間相同。Preferably, the wafer lifting device further includes a control device. The control device includes a plurality of thrust detectors, which are respectively disposed at the bottom of each piston, and are used to detect thrust magnitude data. The number of the thrust detectors is similar to that of the first lifting component. The number is the same; a plurality of contact detectors, which are arranged at the bottom of the wafer and located above the ejector pins respectively, are used to detect the time when the ejector pins contact the wafer; the number of contact detectors is the same as the number of the first jacking elements; the controller, It is electrically connected to each thrust detector, each contact detector and each micro-cylinder, and the controller realizes the synchronous control of the plurality of first jacking elements to ensure that the thrust of each jack is the same, and that the jacks contact the chip at the same time. .
較佳地,第一頂升組件更包含:密封圈法蘭,其設置在設備盤和導向套之間,用於隔離密封。Preferably, the first jacking assembly further includes: a seal ring flange, which is disposed between the equipment plate and the guide sleeve for isolating and sealing.
較佳地,氣缸內設置有氣缸止動塊,氣缸止動塊阻止氣缸活塞繼續向上運動。Preferably, a cylinder stop block is provided in the cylinder, and the cylinder stop block prevents the cylinder piston from continuing to move upward.
較佳地,氣缸止動塊的設置位置滿足以下條件:當氣缸活塞位於氣缸底部的初始位置時,氣缸止動塊的底面與氣缸活塞的頂面距離為H2=9.5至15mm。Preferably, the setting position of the cylinder stop block satisfies the following conditions: when the cylinder piston is located at the initial position of the cylinder bottom, the distance between the bottom surface of the cylinder stop block and the top surface of the cylinder piston is H2 = 9.5 to 15 mm.
較佳地,第二頂升元件中的連接元件包含:複數個頂升臂,各頂升臂固定連接氣缸活塞,頂升臂的數量與第一頂升組件的數量相同;複數個柱塞桿,各柱塞桿的上端分別對應連接微型氣缸的底部,各柱塞桿的下端分別固定連接一個頂升臂,柱塞桿的數量與第一頂升組件的數量相同。Preferably, the connecting elements in the second lifting element include: a plurality of lifting arms, each of which is fixedly connected to a cylinder piston, and the number of the lifting arms is the same as the number of the first lifting components; the plurality of plunger rods The upper end of each plunger rod is correspondingly connected to the bottom of the micro-cylinder, and the lower end of each plunger rod is fixedly connected to a lifting arm, respectively. The number of plunger rods is the same as the number of the first lifting components.
為了達到上述目的,本發明更提供一種利用上述之晶片頂升裝置來實現的晶片頂升方法,包含以下步驟:步驟S1、利用第一頂升元件完成第一頂升階段,在等離子體開啟狀態下將晶片頂升至距離靜電吸盤0.5至3mm,使晶片與靜電吸盤分離;微型氣缸的進氣端輸入氣體,活塞帶動頂桿向上頂升,頂升過程中,控制裝置藉由控制微型氣缸的進氣量來控制所有的頂桿的推力相同以及所有頂桿接觸晶片的時間相同,當活塞接觸到止動塊時,停止運動,頂桿停止頂升,保持微型氣缸的當前進氣量不變;步驟S2、利用第二頂升元件完成第二頂升階段,在等離子體關閉狀態下繼續將晶片頂升至距離靜電吸盤9.5至15mm;氣缸的進氣端輸入氣體,氣缸活塞帶動複數個頂升臂向上運動,頂升臂帶動與其相連的柱塞桿向上運動,複數個柱塞桿分別帶動微型氣缸和頂桿向上頂升,直至氣缸活塞接觸到氣缸止動塊時,氣缸活塞停止運動;步驟S3、晶片被取走後,第一頂升元件和第二頂升元件下降恢復到初始位置,等待下一次頂升過程。In order to achieve the above object, the present invention further provides a wafer lifting method realized by using the wafer lifting device described above, including the following steps: Step S1, using a first lifting element to complete a first lifting stage, in a plasma-on state The wafer is lifted to a distance of 0.5 to 3 mm from the electrostatic chuck to separate the wafer from the electrostatic chuck; the air inlet of the micro-cylinder inputs gas, and the piston drives the jack to lift up. During the lifting process, the control device controls the micro-cylinder's The amount of air intake to control the thrust of all ejectors is the same and all ejectors contact the wafer for the same time. When the piston contacts the stop block, it stops moving and the ejector stops lifting, keeping the current intake of the micro-cylinder unchanged. Step S2: Use the second jacking element to complete the second jacking stage, and continue to jack the wafer to 9.5 to 15mm away from the electrostatic chuck in the plasma closed state; the gas is input to the intake end of the cylinder, and the cylinder piston drives a plurality of jacks The lifting arm moves upward, and the lifting arm drives the plunger rod connected to it to move upward. A plurality of plunger rods respectively drive the miniature cylinder and the lifting rod to lift upward. When the cylinder until the piston contacts the stopper cylinder, cylinder-piston stops moving; step S3, the wafer is removed after the first and the second lifting member lifting element drops back to the initial position, waiting for a lifting process.
較佳地,第一頂升階段在等離子體開啟狀態下進行。Preferably, the first jack-up phase is performed in a plasma-on state.
較佳地,第二頂升階段在等離子體關閉狀態下進行。Preferably, the second jacking stage is performed in a plasma-off state.
較佳地,第一頂升元件和第二頂升元件下降恢復到初始位置具體包含以下步驟:微型氣缸的進氣端停止輸入氣體,缸內氣體從出氣端排出,活塞下降到初始位置,頂桿下降到初始位置,頂桿的頂端低於晶片底面,氣缸的進氣端停止輸入氣體,缸內氣體從出氣端排出,氣缸活塞下降到初始位置,頂升臂和柱塞桿下降到初始位置,微型氣缸下降到初始位置。Preferably, the first jacking element and the second jacking element descending and returning to the initial position specifically include the following steps: the air intake end of the micro-cylinder stops inputting gas, the gas in the cylinder is exhausted from the air-exiting end, and the piston descends to the initial position. The rod is lowered to the initial position. The top end of the ejector rod is lower than the bottom surface of the wafer. The air intake end of the cylinder stops inputting gas, the gas in the cylinder is exhausted from the outlet end, the cylinder piston descends to the initial position, and the lift arm and plunger rod descend to the initial position. The miniature cylinder descends to the initial position.
為了達到上述目的,本發明再提供一種等離子刻蝕設備,包含:刻蝕腔體、設置在刻蝕腔體內的設備盤、設置在設備盤上的靜電吸盤,晶片吸附在靜電吸盤上,靜電吸盤和設備盤上都具有複數個通孔,設備盤上的通孔與靜電吸盤上的通孔形成一個導向通道;等離子刻蝕設備更包含上述設置在等離子體刻蝕腔體內的晶片頂升裝置。In order to achieve the above object, the present invention further provides a plasma etching device, including: an etching cavity, an equipment disc disposed in the etching cavity, an electrostatic chuck disposed on the equipment disc, a wafer being adsorbed on the electrostatic chuck, and an electrostatic chuck Both the device tray and the device tray have a plurality of through holes. The through holes on the device tray and the through holes on the electrostatic chuck form a guide channel. The plasma etching device further includes the wafer lifting device set in the plasma etching chamber.
本發明具有以下優點:The invention has the following advantages:
1、採用微型氣缸來實現第一階段頂升過程,利用微型氣缸來調節頂桿的頂升高度和頂升速度,獲得相同的頂升時間和頂升力,微型氣缸的行程短,合理控制微型氣缸的進氣量可以實現輕柔穩定的頂升過程,防止晶片受損;1. The use of a miniature cylinder to achieve the first stage of the jacking process, the use of a miniature cylinder to adjust the jacking height and jacking speed, to obtain the same jacking time and jacking force, short stroke of the miniature cylinder, reasonable control of the miniature cylinder The amount of air intake can achieve a gentle and stable jacking process to prevent damage to the wafer;
2、微型氣缸的體積小,節省了空間,採用多個微型氣缸實現第一階段頂升,而利用一個氣缸實現第二階段頂升,更加靈活,且降低了成本;2. The miniature cylinder is small in size and saves space. The use of multiple miniature cylinders for the first stage of jacking up, and the use of one cylinder for the second stage of jacking up are more flexible and reduce costs;
3、不需要採用氦氣,避免了晶片被污染的風險。3. No helium is needed, avoiding the risk of wafer contamination.
以下根據第4至8圖,具體說明本發明的較佳實施例。Hereinafter, preferred embodiments of the present invention will be described in detail based on FIGS. 4 to 8.
如第4圖所示,本發明提供一種晶片頂升裝置,設置在等離子體刻蝕腔體內,刻蝕腔體內設置有設備盤3、設備盤3上設置靜電吸盤2,晶片吸附在靜電吸盤2上,靜電吸盤2和設備盤3上都具有複數個通孔,設備盤3上的通孔與靜電吸盤2上的通孔形成一個導向通道21,該晶片頂升裝置包含:As shown in FIG. 4, the present invention provides a wafer lifting device, which is arranged in a plasma etching chamber, an equipment disc 3 is arranged in the etching chamber, an electrostatic chuck 2 is arranged on the equipment disc 3, and a wafer is adsorbed on the electrostatic chuck 2 On the electrostatic chuck 2 and the device tray 3, there are a plurality of through holes. The through hole on the device tray 3 and the through hole on the electrostatic chuck 2 form a guide channel 21. The wafer lifting device includes:
複數個第一頂升元件,其穿過導向通道21設置在晶片下方,用於完成第一頂升階段,將晶片頂升至距離靜電吸盤0.5~3mm,使晶片與靜電吸盤分離;A plurality of first jacking elements, which are arranged below the wafer through the guide channel 21, for completing the first jacking stage, lifting the wafer to a distance of 0.5 to 3 mm from the electrostatic chuck to separate the wafer from the electrostatic chuck;
第二頂升元件,其與所有的第一頂升元件機械連接,用於完成第二頂升階段,繼續將晶片頂升至距離靜電吸盤9.5~15mm,以便機械手取走晶片。The second jacking element is mechanically connected to all the first jacking elements and is used to complete the second jacking stage, and continues to jack the wafer to a distance of 9.5 to 15 mm from the electrostatic chuck so that the robot can remove the wafer.
第一頂升組件包含:The first jacking assembly contains:
導向套103,其固定設置在每個導向通道21的下方;A guide sleeve 103, which is fixedly disposed below each guide channel 21;
微型氣缸101,其設置在導向套103中,可以沿著導向套103的軸向上下移動,微型氣缸101內具有活塞102,在氣體的推動下,活塞102可在微型氣缸101內上下移動,微型氣缸101內還設置有止動塊107,止動塊107阻止活塞102繼續向上運動;The micro-cylinder 101 is arranged in the guide sleeve 103 and can move up and down along the axial direction of the guide sleeve 103. The micro-cylinder 101 has a piston 102. Under the impulse of the gas, the piston 102 can move up and down in the micro-cylinder 101. A stopper 107 is also provided in the cylinder 101, and the stopper 107 prevents the piston 102 from continuing to move upwards;
頂桿元件,其設置在導向通道21內,如第5圖所示,該頂桿組件包含頂桿主體1041和設置在頂桿主體1041中的頂桿104,頂桿主體1041的底部藉由波紋管105與微型氣缸101的頂部密封連接,頂桿104藉由密封圈1042嵌設在頂桿主體1041的頂部,頂桿104的底部固定連接微型氣缸101的活塞102,在活塞102的帶動下,頂桿104可以向上頂起,頂桿104的頂端接觸晶片1並將晶片1頂起。The ejector element is disposed in the guide channel 21. As shown in FIG. 5, the ejector assembly includes an ejector main body 1041 and an ejector 104 provided in the ejector main body 1041. The bottom of the ejector main body 1041 is corrugated. The tube 105 is hermetically connected to the top of the microcylinder 101. The rod 104 is embedded in the top of the rod main body 1041 through a seal ring 1042. The bottom of the rod 104 is fixedly connected to the piston 102 of the microcylinder 101. Driven by the piston 102, The ejector pin 104 can be lifted upward, and the top end of the ejector pin 104 contacts the wafer 1 and lifts the wafer 1.
第一頂升組件更包含:密封圈法蘭106,其設置在設備盤3和導向套103之間,由於頂桿104上方是真空腔體,法蘭密封圈106主要起到與外界氣體隔離的作用,該密封圈法蘭106接觸設備盤3底面和導向套103的內壁,達到密封效果。The first jacking assembly further includes a sealing ring flange 106, which is disposed between the equipment plate 3 and the guide sleeve 103. Since the vacuum rod is above the ejector pin 104, the flange sealing ring 106 mainly isolates from the outside gas. Function, the sealing ring flange 106 contacts the bottom surface of the equipment tray 3 and the inner wall of the guide sleeve 103 to achieve a sealing effect.
如第4圖所示,第二頂升元件包含:As shown in Figure 4, the second jacking element includes:
氣缸201,其中具有氣缸活塞202,在氣體的推動下,氣缸活塞202可在氣缸201內上下移動,氣缸201內還設置有氣缸止動塊205,氣缸止動塊205阻止氣缸活塞202繼續向上運動;The air cylinder 201 has a cylinder piston 202. The gas cylinder pushes the cylinder piston 202 up and down in the cylinder 201. The cylinder 201 is also provided with a cylinder stop block 205, which prevents the cylinder piston 202 from moving upwards. ;
複數個頂升臂203,每一個頂升臂203固定連接氣缸活塞202,頂升臂203的數量與第一頂升組件的數量相同;A plurality of lifting arms 203, each of which is fixedly connected to the cylinder piston 202, and the number of the lifting arms 203 is the same as the number of the first lifting components;
複數個柱塞桿204,每一個柱塞桿204的上端分別對應連接微型氣缸101的底部,柱塞桿204的下端分別固定連接一個頂升臂203,柱塞桿204的數量與第一頂升組件的數量相同。A plurality of plunger rods 204, the upper end of each plunger rod 204 is correspondingly connected to the bottom of the microcylinder 101, the lower end of the plunger rod 204 is fixedly connected to a lifting arm 203, and the number of plunger rods 204 is the same as the first lifting The number of components is the same.
在刻蝕制程完成後,首先由第一頂升組件完成第一頂升階段,將晶片頂升至距離靜電吸盤0.5~3mm,使晶片與靜電吸盤分離,具體地,微型氣缸101的進氣端輸入氣體,推動活塞102向上運動,同時帶動頂桿元件中的頂桿104向上運動,頂桿104的頂端接觸到晶片1後進一步上升,將晶片1頂起,直至活塞102接觸到止動塊107後停止運動,頂桿104也停止。接著由第二頂升元件完成第二頂升階段,繼續將晶片頂升至距離靜電吸盤9.5~15mm,以便機械手取走晶片,具體地,氣缸201的進氣端輸入氣體,推動氣缸活塞202向上運動,帶動多個頂升臂203和多個柱塞桿204同時向上運動,同時帶動微型氣缸101和頂桿104向上運動,微型氣缸101和頂桿104上升過程中,波紋管105收縮,直至氣缸活塞202接觸到氣缸止動塊205後停止運動,此時晶片被頂升至距離靜電吸盤9.5~15mm,氣缸201進氣端停止輸入氣體,氣缸201停止驅動活塞202,完成頂升過程。After the etching process is completed, the first lifting stage is first completed by the first lifting component, and the wafer is lifted to a distance of 0.5 to 3 mm from the electrostatic chuck to separate the wafer from the electrostatic chuck. Specifically, the intake end of the micro-cylinder 101 Input the gas, push the piston 102 to move upwards, and at the same time drive the ejector rod 104 in the ejector element to move upwards. The top of the ejector rod 104 contacts the wafer 1 and rises further, and lifts the wafer 1 until the piston 102 contacts the stopper 107. After stopping the movement, the ejector rod 104 also stops. Then the second lifting stage is completed by the second lifting element, and the wafer is continuously lifted to a distance of 9.5 to 15 mm from the electrostatic chuck so that the robot can remove the wafer. Specifically, the air inlet of the cylinder 201 inputs gas to push the cylinder piston 202 The upward movement drives multiple lifting arms 203 and multiple plunger rods 204 to move upward simultaneously, and simultaneously drives the micro cylinder 101 and the ejector rod 104 to move upward. During the ascent of the micro cylinder 101 and the ejector rod 104, the bellows 105 contracts until The cylinder piston 202 stops moving after contacting the cylinder stop block 205. At this time, the wafer is lifted to a distance of 9.5 to 15 mm from the electrostatic chuck, the air intake of the cylinder 201 stops inputting gas, and the cylinder 201 stops driving the piston 202 to complete the jacking process.
為了保證頂升力的均勻分佈,設置多個第一頂升元件,第一頂升元件的數量大於等於3個。如第6圖所示,本實施例中,設置3個第一頂升組件,呈等腰三角形分佈在靜電吸盤2上的1號孔位、2號孔位和3號孔位處。如果按照常規設置,將所有的頂桿元件直接與氣缸201連接,直接實現第一頂升階段和第二頂升階段,由於在頂升過程中頂桿204僅僅受到密封圈1042的彈力束縛,又缺少止動裝置,故而較難控制多個頂桿204的頂升距離,難以獲得同樣的頂升距離,當其中一個頂桿204已經接觸晶片1時,可能其他的頂桿204還未接觸到晶片1,又或者也許所有的頂桿204是同步接觸到晶片1的,但是由於靜電吸盤2上的靜電荷並未完全釋放,導致靜電吸盤2上的電荷分佈不均,某些孔位處對晶片的吸力大,某些空位處對晶片的吸力小,此時用同樣的頂升力來驅動頂桿204,會導致某些孔位處的頂桿204已經頂起,但是某些孔位處的頂升力不足以克服吸力,無法頂起晶片,這勢必就造成了晶片的破損。本發明為每一個第一頂升元件都單獨配置了微型氣缸101,分別用微型氣缸101來驅動每一個頂桿元件,微型氣缸101的體積小,可以設置在導向套內,且微型氣缸101的行程短,利用微型氣缸101來控制每個頂桿元件的頂升力和頂升時間,使每個頂桿104的頂升高度保持一致,令晶片與靜電吸盤安全分離。In order to ensure the uniform distribution of the lifting force, a plurality of first lifting elements are provided, and the number of the first lifting elements is three or more. As shown in FIG. 6, in this embodiment, three first jacking components are provided, which are distributed in isosceles triangles at the positions of the first hole, the second hole, and the third hole on the electrostatic chuck 2. If all the ejector elements are directly connected to the cylinder 201 according to the conventional setting, the first and second jacking stages are directly implemented. Since the ejector 204 is only bound by the elastic force of the seal ring 1042 during the jacking process, The lack of a stop device makes it difficult to control the jacking distances of multiple ejectors 204, and it is difficult to obtain the same jacking distance. When one of the ejectors 204 has already touched the wafer 1, the other ejectors 204 may not have touched the wafer yet. 1, or maybe all of the ejector pins 204 are in contact with wafer 1 at the same time, but because the electrostatic charge on electrostatic chuck 2 is not completely released, the charge distribution on electrostatic chuck 2 is uneven, and some holes are facing the wafer. The suction force is large, and the suction force on the wafer is small in some vacancies. At this time, the same jacking force is used to drive the ejector rod 204, which will cause the ejector rod 204 at some hole positions to be jacked up, but the ejector rods at some hole positions will be lifted. The lift is not enough to overcome the suction and cannot lift the wafer, which will inevitably cause the wafer to break. In the present invention, each first jacking element is individually configured with a micro cylinder 101, and each of the ejector elements is driven by the micro cylinder 101. The micro cylinder 101 has a small volume and can be disposed in a guide sleeve. The stroke is short. The micro-cylinder 101 is used to control the jacking force and jacking time of each ejector element, so that the ejection height of each ejector 104 is consistent, and the wafer and the electrostatic chuck are safely separated.
為了更好地控制第一頂升元件實現第一頂升階段,可以藉由控制裝置來調節頂升時間和頂升速度。如第7圖所示,控制裝置包含:In order to better control the first jacking element to achieve the first jacking stage, the jacking time and jacking speed can be adjusted by a control device. As shown in Figure 7, the control device includes:
複數個推力探測器108,其分別設置在每個活塞102底部,用於探測推力大小資料,該推力探測器108的數量與第一頂升組件的數量相同;A plurality of thrust detectors 108, which are respectively disposed at the bottom of each piston 102 and are used to detect thrust magnitude data, and the number of the thrust detectors 108 is the same as the number of the first jacking components;
複數個接觸探測器109,其設置在晶片1底部,分別位於頂桿104上方,用於探測頂桿104接觸到晶片的時間,該接觸探測器109的數量與第一頂升元件的數量相同;A plurality of contact detectors 109, which are arranged at the bottom of the wafer 1, respectively above the ejector pins 104, and are used to detect the time when the ejector pins 104 contact the wafer; the number of the contact detectors 109 is the same as the number of the first jacking elements;
控制器(圖中未顯示),其電性連接每一個推力探測器108、每一個接觸探測器109和每一個微型氣缸101,該控制器實現對複數個第一頂升組件的同步控制,具體來說,是將推力探測器108探測到的推力和接觸探測器109探測到的接觸時間與預先設定的推力和接觸時間相比較,計算得到實際推力和接觸時間與設定推力和接觸時間的差值,經過PID控制計算,即時調整微型氣缸101的進氣氣壓和速率,從而即時調整活塞102的上升速度,進一步控制頂桿104的頂升高度和頂升力度,以保證每一個頂桿的推力相同,每一個頂桿接觸晶片的時間相同。A controller (not shown), which is electrically connected to each thrust detector 108, each contact detector 109, and each micro-cylinder 101. The controller realizes synchronous control of a plurality of first jacking components. In other words, the thrust detected by the thrust detector 108 and the contact time detected by the contact detector 109 are compared with the preset thrust and contact time, and the difference between the actual thrust and contact time and the set thrust and contact time is calculated. Through PID control calculation, the intake air pressure and speed of the micro-cylinder 101 can be adjusted in real time, so that the rising speed of the piston 102 can be adjusted in real time, and the lifting height and lifting force of the ejector rod 104 can be further controlled to ensure the same thrust of each ejector rod. , Each ejector contacts the wafer for the same time.
本發明還提供一種等離子刻蝕設備,包含:刻蝕腔體、設置在刻蝕腔體內的設備盤3、設置在設備盤3上的靜電吸盤2,晶片吸附在靜電吸盤2上,靜電吸盤2和設備盤3上都具有複數個通孔,設備盤3上的通孔與靜電吸盤2上的通孔形成一個導向通道21;The invention also provides a plasma etching equipment, comprising: an etching cavity, an equipment disc 3 arranged in the etching cavity, an electrostatic chuck 2 arranged on the equipment disc 3, a wafer being adsorbed on the electrostatic chuck 2, and an electrostatic chuck 2 And the device tray 3 has a plurality of through holes, the through holes on the device tray 3 and the through holes on the electrostatic chuck 2 form a guide channel 21;
該等離子刻蝕設備更包含設置在等離子體刻蝕腔體內的晶片頂升裝置,該晶片頂升裝置包含:The plasma etching equipment further includes a wafer lifting device disposed in the plasma etching chamber. The wafer lifting device includes:
複數個第一頂升元件,其穿過導向通道21設置在晶片下方,用於完成第一頂升階段,將晶片頂升至距離靜電吸盤0.5~3mm,使晶片與靜電吸盤分離;A plurality of first jacking elements, which are arranged below the wafer through the guide channel 21, for completing the first jacking stage, lifting the wafer to a distance of 0.5 to 3 mm from the electrostatic chuck to separate the wafer from the electrostatic chuck;
第二頂升元件,其與所有的第一頂升元件機械連接,用於完成第二頂升階段,繼續將晶片頂升至距離靜電吸盤9.5~15mm,以便機械手取走晶片。The second jacking element is mechanically connected to all the first jacking elements and is used to complete the second jacking stage, and continues to jack the wafer to a distance of 9.5 to 15 mm from the electrostatic chuck so that the robot can remove the wafer.
第一頂升組件包含:The first jacking assembly contains:
導向套103,其固定設置在每個導向通道21的下方;A guide sleeve 103, which is fixedly disposed below each guide channel 21;
微型氣缸101,其設置在導向套103中,可以沿著導向套103的軸向上下移動,微型氣缸101內具有活塞102,在氣體的推動下,活塞102可在微型氣缸101內上下移動,微型氣缸101內還設置有止動塊107,止動塊107阻止活塞102繼續向上運動;The micro-cylinder 101 is arranged in the guide sleeve 103 and can move up and down along the axial direction of the guide sleeve 103. The micro-cylinder 101 has a piston 102. Under the impulse of the gas, the piston 102 can move up and down in the micro-cylinder 101. A stopper 107 is also provided in the cylinder 101, and the stopper 107 prevents the piston 102 from continuing to move upwards;
頂桿元件,其設置在導向通道21內,該頂桿元件包含頂桿主體1041和設置在頂桿主體1041中的頂桿104,頂桿主體1041的底部藉由波紋管105與微型氣缸101的頂部密封連接,頂桿104藉由密封圈1042嵌設在頂桿主體1041的頂部,頂桿104的底部固定連接微型氣缸101的活塞102,在活塞102的帶動下,頂桿104可以向上頂起,頂桿104的頂端接觸晶片1並將晶片1頂起。The ejector element is provided in the guide passage 21, and the ejector element includes an ejector main body 1041 and an ejector 104 provided in the ejector main body 1041. The bottom of the ejector main body 1041 is connected to The top is hermetically connected. The top rod 104 is embedded in the top of the top rod body 1041 through a seal ring 1042. The bottom of the top rod 104 is fixedly connected to the piston 102 of the microcylinder 101. With the drive of the piston 102, the top rod 104 can be jacked up. The top of the ejector pin 104 contacts the wafer 1 and lifts the wafer 1.
第一頂升組件更包含:密封圈法蘭106,其設置在設備盤3和導向套103之間,由於頂桿104上方是真空腔體,法蘭密封圈106主要起到與外界氣體隔離的作用,該密封圈法蘭106接觸設備盤3底面和導向套103的內壁,達到密封效果。The first jacking assembly further includes a sealing ring flange 106, which is disposed between the equipment plate 3 and the guide sleeve 103. Since the vacuum rod is above the ejector pin 104, the flange sealing ring 106 mainly isolates from the outside gas. Function, the sealing ring flange 106 contacts the bottom surface of the equipment tray 3 and the inner wall of the guide sleeve 103 to achieve a sealing effect.
第二頂升元件包含:The second jacking element contains:
氣缸201,其中具有氣缸活塞202,在氣體的推動下,氣缸活塞202可在氣缸201內上下移動,氣缸201內還設置有氣缸止動塊205,氣缸止動塊205阻止氣缸活塞202繼續向上運動;The air cylinder 201 has a cylinder piston 202. The gas cylinder pushes the cylinder piston 202 up and down in the cylinder 201. The cylinder 201 is also provided with a cylinder stop block 205, which prevents the cylinder piston 202 from moving upwards. ;
複數個頂升臂203,每一個頂升臂203固定連接氣缸活塞202,頂升臂203的數量與第一頂升組件的數量相同;A plurality of lifting arms 203, each of which is fixedly connected to the cylinder piston 202, and the number of the lifting arms 203 is the same as the number of the first lifting components;
複數個柱塞桿204,每一個柱塞桿204的上端分別對應連接微型氣缸101的底部,柱塞桿204的下端分別固定連接一個頂升臂203,柱塞桿204的數量與第一頂升組件的數量相同。A plurality of plunger rods 204, the upper end of each plunger rod 204 is correspondingly connected to the bottom of the microcylinder 101, the lower end of the plunger rod 204 is fixedly connected to a lifting arm 203, and the number of plunger rods 204 is the same as the first lifting The number of components is the same.
第一頂升組件的數量大於等於3個。The number of the first jacking components is three or more.
晶片頂升裝置更包含控制裝置,該控制裝置包含:The wafer lifting device further includes a control device, and the control device includes:
複數個推力探測器108,其分別設置在每個活塞102底部,用於探測推力大小資料,該推力探測器108的數量與第一頂升組件的數量相同;A plurality of thrust detectors 108, which are respectively disposed at the bottom of each piston 102 and are used to detect thrust magnitude data, and the number of the thrust detectors 108 is the same as the number of the first jacking components;
複數個接觸探測器109,其設置在晶片1底部,分別位於頂桿104上方,用於探測頂桿104接觸到晶片的時間,該接觸探測器109的數量與第一頂升元件的數量相同;A plurality of contact detectors 109, which are arranged at the bottom of the wafer 1, respectively above the ejector pins 104, and are used to detect the time when the ejector pins 104 contact the wafer; the number of the contact detectors 109 is the same as the number of the first jacking elements;
控制器(圖中未顯示),其電性連接每一個推力探測器108、每一個接觸探測器109和每一個微型氣缸101,該控制器實現對複數個第一頂升組件的同步控制,具體來說,是將推力探測器108探測到的推力和接觸探測器109探測到的接觸時間與預先設定的推力和接觸時間相比較,計算得到實際推力和接觸時間與設定推力和接觸時間的差值,經過PID控制計算,即時調整微型氣缸101的進氣氣壓和速率,從而即時調整活塞102的上升速度,進一步控制頂桿104的頂升高度和頂升力度,以保證每一個頂桿的推力相同,每一個頂桿接觸晶片的時間相同。A controller (not shown), which is electrically connected to each thrust detector 108, each contact detector 109, and each micro-cylinder 101. The controller realizes synchronous control of a plurality of first jacking components. In other words, the thrust detected by the thrust detector 108 and the contact time detected by the contact detector 109 are compared with the preset thrust and contact time, and the difference between the actual thrust and contact time and the set thrust and contact time is calculated. Through PID control calculation, the intake air pressure and speed of the micro-cylinder 101 can be adjusted in real time, so that the rising speed of the piston 102 can be adjusted in real time, and the lifting height and lifting force of the ejector rod 104 can be further controlled to ensure the same thrust of each ejector rod. , Each ejector contacts the wafer for the same time.
本發明還提供一種晶片頂升方法,包含以下步驟:The invention also provides a wafer lifting method, which includes the following steps:
步驟S1、利用第一頂升組件完成第一頂升階段,將晶片頂升至距離靜電吸盤0.5~3mm,使晶片與靜電吸盤分離;Step S1, using the first jacking component to complete the first jacking stage, jacking the wafer to a distance of 0.5 to 3 mm from the electrostatic chuck to separate the wafer from the electrostatic chuck;
步驟S2、利用第二頂升元件完成第二頂升階段,繼續將晶片頂升至距離靜電吸盤9.5~15mm;Step S2, using the second lifting element to complete the second lifting stage, and continuing to lift the wafer to a distance of 9.5 to 15 mm from the electrostatic chuck;
步驟S3、晶片被取走後,第一頂升元件和第二頂升元件下降恢復到初始位置,等待下一次頂升過程。Step S3: After the wafer is removed, the first jacking element and the second jacking element are lowered and restored to the initial positions, and wait for the next jacking process.
如第8A圖所示,步驟S1中,第一頂升階段在等離子體開啟狀態下進行,以便更好地釋放靜電吸盤上的靜電荷,第一頂升階段具體包含以下步驟:As shown in FIG. 8A, in step S1, the first jacking stage is performed in a plasma-on state in order to better release the electrostatic charge on the electrostatic chuck. The first jacking stage specifically includes the following steps:
微型氣缸101的進氣端輸入氣體(一般輸入氣體為乾燥的空氣Compress Dry Air,採用獨立的CDA系統回路提供乾燥的空氣),活塞102帶動頂桿104向上頂升,頂升過程中,控制裝置藉由控制微型氣缸101的進氣量來控制所有的頂桿的推力相同以及所有頂桿接觸晶片的時間相同,當活塞102接觸到止動塊107時,停止運動,頂桿104停止頂升,保持微型氣缸101的當前進氣量不變。Air is input to the inlet of the micro-cylinder 101 (common dry air is generally used as the input air, and the independent CDA system circuit is used to provide dry air). The piston 102 drives the ejector 104 to lift upward. During the lift, the control device By controlling the air intake of the micro-cylinder 101, the thrust of all the ejectors is controlled to be the same, and all the ejectors are in contact with the wafer for the same time. When the piston 102 contacts the stopper 107, it stops moving and the ejector 104 stops lifting. The current intake amount of the micro-cylinder 101 is kept unchanged.
如第8C圖所示,止動塊107的設置位置滿足以下條件:當活塞102位於微型氣缸101底部的初始位置時,止動塊107的底面與活塞102的頂面距離為H1=0.5~3mm。As shown in FIG. 8C, the setting position of the stopper 107 satisfies the following conditions: When the piston 102 is located at the initial position of the bottom of the miniature cylinder 101, the distance between the bottom surface of the stopper 107 and the top surface of the piston 102 is H1 = 0.5 to 3 mm .
整個第一頂升階段完成後,晶片與靜電吸盤的距離為H1=0.5~3mm。After the entire first jacking stage is completed, the distance between the wafer and the electrostatic chuck is H1 = 0.5 to 3 mm.
如第8B圖所示,步驟S2中,第二頂升階段在等離子體關閉狀態下進行,第二頂升階段具體包含以下步驟:As shown in FIG. 8B, in step S2, the second jacking stage is performed in a plasma off state, and the second jacking stage specifically includes the following steps:
氣缸201的進氣端輸入氣體(一般輸入氣體為乾燥的空氣,採用獨立的CDA系統回路提供乾燥的空氣),氣缸活塞202帶動多個頂升臂203向上運動,頂升臂203帶動與其相連的柱塞桿204向上運動,多個柱塞桿204分別帶動微型氣缸101和頂桿104向上頂升,直至氣缸活塞202接觸到氣缸止動塊205時,氣缸活塞202停止運動。Air is input to the intake end of the cylinder 201 (generally the input air is dry air, and the independent CDA system circuit is used to provide dry air). The cylinder piston 202 drives a plurality of lifting arms 203 to move upward, and the lifting arms 203 drive the connected The plunger rod 204 moves upward, and the plurality of plunger rods 204 respectively drive the micro-cylinder 101 and the ejector rod 104 to lift upward until the cylinder piston 202 stops moving when the cylinder piston 202 contacts the cylinder stop block 205.
氣缸止動塊205的設置位置滿足以下條件:當氣缸活塞202位於氣缸201底部的初始位置時,氣缸止動塊205的底面與氣缸活塞202的頂面距離為H2=9.5~15mm。The setting position of the cylinder stop block 205 satisfies the following conditions: When the cylinder piston 202 is located at the initial position of the bottom of the cylinder 201, the distance between the bottom surface of the cylinder stop block 205 and the top surface of the cylinder piston 202 is H2 = 9.5 to 15 mm.
整個第二頂升階段完成後,晶片與靜電吸盤的距離為H2=9.5~15mm。After the entire second jacking phase is completed, the distance between the wafer and the electrostatic chuck is H2 = 9.5 to 15 mm.
如第8C圖所示,步驟S3中,微型氣缸101的進氣端停止輸入氣體,缸內氣體從出氣端排出,活塞102下降到初始位置,頂桿104下降到初始位置,頂桿104的頂端低於晶片1底面,氣缸201的進氣端停止輸入氣體,缸內氣體從出氣端排出,氣缸活塞202下降到初始位置,頂升臂203和柱塞桿204下降到初始位置,微型氣缸101下降到初始位置。As shown in FIG. 8C, in step S3, the intake end of the micro-cylinder 101 stops inputting gas, the gas in the cylinder is exhausted from the outlet end, the piston 102 descends to the initial position, the ejector 104 descends to the initial position, and the top of the ejector 104 Below the bottom surface of wafer 1, the air intake end of the cylinder 201 stops inputting gas, the gas in the cylinder is exhausted from the air exit end, the cylinder piston 202 descends to the initial position, the jacking arm 203 and the plunger rod 204 descend to the initial position, and the miniature cylinder 101 descends To the initial position.
本發明具有以下優點:The invention has the following advantages:
1、採用微型氣缸來實現第一階段頂升過程,利用微型氣缸來調節頂桿的頂升高度和頂升速度,獲得相同的頂升時間和頂升力,微型氣缸的行程短,合理控制微型氣缸的進氣量可以實現輕柔穩定的頂升過程,防止晶片受損;1. The use of a miniature cylinder to achieve the first stage of the jacking process, the use of a miniature cylinder to adjust the jacking height and jacking speed, to obtain the same jacking time and jacking force, short stroke of the miniature cylinder, reasonable control of the miniature cylinder The amount of air intake can achieve a gentle and stable jacking process to prevent damage to the wafer;
2、微型氣缸的體積小,節省了空間,採用多個微型氣缸實現第一階段頂升,而利用一個氣缸實現第二階段頂升,更加靈活,且降低了成本;2. The miniature cylinder is small in size and saves space. The use of multiple miniature cylinders for the first stage of jacking up, and the use of one cylinder for the second stage of jacking up are more flexible and reduce costs;
3、不需要採用氦氣,避免了晶片被污染的風險。3. No helium is needed, avoiding the risk of wafer contamination.
儘管本發明的內容已經藉由上述較佳實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above-mentioned preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those skilled in the art after reading the foregoing. Therefore, the protection scope of the present invention should be defined by the scope of the attached patent application.
1、406‧‧‧晶片
101‧‧‧微型氣缸
102‧‧‧活塞
103‧‧‧導向套
104‧‧‧頂桿
1041‧‧‧頂桿主體
1042‧‧‧密封圈
105‧‧‧波紋管
106‧‧‧密封圈法蘭
107‧‧‧止動塊
108‧‧‧推力探測器
109‧‧‧接觸探測器
2、404‧‧‧靜電吸盤
201、206‧‧‧氣缸
202‧‧‧氣缸活塞
203‧‧‧頂升臂
204‧‧‧柱塞桿
205‧‧‧氣缸止動塊
21‧‧‧導向通道
3‧‧‧設備盤
301‧‧‧第一活塞
302‧‧‧第二活塞
305‧‧‧第二氣缸
311、312‧‧‧塞桿
442‧‧‧應變儀
450‧‧‧數位訊號處理器
452‧‧‧馬達控制器1,406‧‧‧chip
101‧‧‧Mini Cylinder
102‧‧‧Piston
103‧‧‧Guide sleeve
104‧‧‧ Jack
1041‧‧‧ Main body
1042‧‧‧Sealing ring
105‧‧‧ Bellows
106‧‧‧Seal ring flange
107‧‧‧stop block
108‧‧‧thrust detector
109‧‧‧contact detector
2.404‧‧‧Electrostatic Chuck
201, 206‧‧‧ cylinder
202‧‧‧cylinder piston
203‧‧‧Lifting arm
204‧‧‧ plunger rod
205‧‧‧cylinder stop
21‧‧‧Guideway
3‧‧‧ equipment tray
301‧‧‧first piston
302‧‧‧Second Piston
305‧‧‧Second cylinder
311, 312‧‧‧ plug
442‧‧‧ strain gauge
450‧‧‧ Digital Signal Processor
452‧‧‧Motor controller
第1圖是先前技術中頂升裝置的結構示意圖。 第2A至2C圖是先前技術中另一種頂升裝置的結構示意圖。 第3圖是先前技術中第三種頂升裝置的結構示意圖。 第4圖是本發明提供的晶片頂升裝置的結構示意圖。 第5圖是頂升元件的局部放大示意圖。 第6圖是晶片頂升裝置的俯視圖。 第7圖是第一頂升元件的結構示意圖。 第8A至8C圖是晶片頂升方法的示意圖。FIG. 1 is a schematic structural diagram of a jacking device in the prior art. Figures 2A to 2C are schematic structural diagrams of another jacking device in the prior art. FIG. 3 is a schematic structural diagram of a third jacking device in the prior art. FIG. 4 is a schematic structural diagram of a wafer lifting device provided by the present invention. Fig. 5 is a partially enlarged schematic diagram of the jacking element. Fig. 6 is a plan view of a wafer lifting device. FIG. 7 is a schematic structural diagram of a first jacking element. 8A to 8C are schematic diagrams of a wafer jacking method.
1‧‧‧晶片 1‧‧‧Chip
101‧‧‧微型氣缸 101‧‧‧Mini Cylinder
102‧‧‧活塞 102‧‧‧Piston
103‧‧‧導向套 103‧‧‧Guide sleeve
104‧‧‧頂桿 104‧‧‧ Jack
1041‧‧‧頂桿主體 1041‧‧‧ Main body
105‧‧‧波紋管 105‧‧‧ Bellows
106‧‧‧密封圈法蘭 106‧‧‧Seal ring flange
107‧‧‧止動塊 107‧‧‧stop block
2‧‧‧靜電吸盤 2‧‧‧ electrostatic chuck
201‧‧‧氣缸 201‧‧‧ Cylinder
202‧‧‧氣缸活塞 202‧‧‧cylinder piston
203‧‧‧頂升臂 203‧‧‧Lifting arm
204‧‧‧柱塞桿 204‧‧‧ plunger rod
205‧‧‧氣缸止動塊 205‧‧‧cylinder stop
21‧‧‧導向通道 21‧‧‧Guideway
3‧‧‧設備盤 3‧‧‧ equipment tray
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CN106935540A (en) | 2017-07-07 |
CN106935540B (en) | 2019-08-06 |
TW201724346A (en) | 2017-07-01 |
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