CN103903947A - Plasma processor and operation method thereof - Google Patents
Plasma processor and operation method thereof Download PDFInfo
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- CN103903947A CN103903947A CN201210575968.8A CN201210575968A CN103903947A CN 103903947 A CN103903947 A CN 103903947A CN 201210575968 A CN201210575968 A CN 201210575968A CN 103903947 A CN103903947 A CN 103903947A
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Abstract
The invention provides a plasma reactor and an operation method thereof. The processing method comprises steps of providing processing gas to enter the plasma processor and electrically burning the plasma and processing a substrate, extinguishing the plasma, providing low-pressure gas by a gas supply system to a gas cylinder to enable lifting pins in an electrical grounding state to rise to be contacted with the back of the substrate, providing high-pressure gas by the gas supply system to the gas cylinder to enable the lifting pins to rise to a second height when the lifting pins lift the substrates to a first height, and removing the substrates.
Description
Technical field
The present invention relates to plasma processor field, relate in particular to a kind of substrate for plasma reactor disengaging method and device from electrostatic chuck.
Background technology
In the manufacture process of semiconductor equipment, such as, in the processing procedure such as etching, deposition, conventionally can utilize plasma to process substrate (semiconductor wafer, glass substrate etc.).Usually, for plasma processing apparatus, as the mode that generates plasma, in the plasma processing apparatus of high-frequency discharge mode, comprise capacitive coupling plasma reactor and inductance coupling high type plasma reactor.Described capacitive coupling type plasma reactor disposes upper electrode and lower electrode conventionally, and preferably these two electrodes be arranged in parallel.And, conventionally on lower electrode, loading processed substrate, the high frequency electric source that plasma is generated to use via integrator puts on upper electrode or lower electrode.By the high-frequency electric field being generated by this high frequency electric source, the external electrical of reacting gas is accelerated, thereby produce plasma, lower substrate is carried out to plasma treatment.Wherein lower electrode top also comprises that an electrostatic chuck (ESC) fixes pending substrate as wafer, electrostatic chuck has insulating material to make, middle implantation is connected to an adsorption electrode, and this electrode is connected to the absorption power supply of an output high-voltage dc voltage.Before formally utilizing plasma treatment, substrate is placed on electrostatic chuck, pass into enough reacting gass, apply high-frequency electric field or plasma is lighted in magnetic field, then apply the absorption high pressure of described absorption power supply to described adsorption electrode, make pending substrate surface form charge inducing.After completing, the plasma treatment of pending substrate need to allow substrate separate from electrostatic chuck, except applying and adsorbing voltage that high pressure has an opposite polarity and also need to apply mechanical force make substrate overcome the absorption affinity that gravity and minority residual charge produce on-chip electric charge to eliminate induction.The common method that applies mechanical force is to utilize lifting pin (liftpin) lifting, or utilizes and pass into refrigerating gas in static basal disc and provide lift as helium (Helium).So one of the remaining indefinite very difficult acquisition of amount of charge suitable lifting force all in different making technologies in due to substrate in the time utilizing lifting pin to take lifting substrate, the excessive all right substrate that causes of lifting force breaks, and lifting force deficiency cannot make substrate all depart from electrostatic chuck.Adopt refrigerating gas lifting can avoid the problems referred to above, but can be due to the act holder of gas in the time that substrate departs from electrostatic chuck upper surface while adopting refrigerating gas lifting, can be to horizontal direction translation, when the translation distance of substrate is enough large, can collide with appurtenances such as being centered around focusing ring around substrate.The polymer beads that collision generation can make to stick on focusing ring adheres on the substrate that completes processing, affects rate of finished products.
So need in the industry a kind of better lifting substrate to make it depart from the method for electrostatic chuck, can avoid substrate translation also can prevent that substrate from breaking.
Summary of the invention
The object of this invention is to provide a kind of plasma processor, can after plasma treatment completes, remove fast substrate, prevent that substrate from breaking or translation simultaneously.
The invention provides a kind of plasma processor, comprise: a reaction chamber, in reaction chamber, comprise a pedestal, pedestal top comprises an electrostatic chuck, pending substrate is placed on electrostatic chuck, also comprises that a refrigerating gas supply line is to substrate lower surface supply refrigerating gas in described pedestal.Pedestal bottom comprises a cylinder, in cylinder, comprise a piston, described piston is connected to described multiple lifting pin, multiple liftings hole site in the electrostatic chuck of described lifting pin and pedestal top is corresponding, it is characterized in that: described cylinder is connected to an air supply system, described air supply system provides the gas of high pressure and two kinds of air pressure of low pressure to cylinder, and in the time that air supply system provides low-pressure gas to cylinder, lifting pin top has the first height and position; When air supply system provides gases at high pressure to cylinder, lifting pin top has the second height and position, and wherein said lifting pin is electrically connected to earth terminal.Wherein air supply system comprises that a source of the gas provides stable gases at high pressure and a barostat to receive the gases at high pressure of source of the gas the low-pressure gas at output stable output from input, also comprises that a by-pass switch is connected to input and the output of described barostat.In air supply system, between barostat input and source of the gas, can also be in series with a valve.
Wherein on lifting pin, can be fixed with a station location marker device.Described plasma processor also comprises a position identification device, corresponding with described station location marker device and read positional information.
A stop can be set on lifting pin, in pedestal, also be fixed with a removable baffle plate in pin uphill process, can selective blocking or discharge described stop.
Described cylinder comprises that it is upper space and lower space that a piston is separated cylinder interior space, and lower space is connected to described air supply system by first gas inlet and outlet, and inputs described gases at high pressure or low-pressure gas; Upper space is discharged upper space by the second gas inlet and outlet by gas, and described piston is connected to the moving described lifting pin of described lift tube tape and rises or decline.
The present invention also provides a kind of operation method of plasma processor, described plasma processor comprises: a reaction chamber, in reaction chamber, comprise a pedestal, pedestal top comprises an electrostatic chuck, pending substrate is placed on electrostatic chuck, in described pedestal, also comprise that a refrigerating gas supply line is to substrate lower surface supply refrigerating gas, described pedestal also comprises a cylinder, accept to move up and down from the multiple lifting pins of gas-powered of gas supply system, the treating method comprises step: provide processing gas to enter plasma processor, electricity combustion plasma is processed substrate, extinguish plasma, gas supply system provides low-pressure gas to cylinder, makes rise and contact substrate back in the lifting pin of state electrical ground, when lifting pin lifting substrate to the first height, gas supply system provides gases at high pressure to make lifting pin rise to the second height to cylinder, finally remove substrate.Can also comprise step: before substrate described in the lifting of lifting pin, extract the refrigerating gas in cooling air pipe out.
Wherein lifting pin contact substrate back is lifted to first to substrate highly needs 1-3 second.First is highly less than or equal to 1mm, and second is highly greater than 10mm is less than 15mm.Described low-pressure gas has the air pressure of 10-35PSI, and described gases at high pressure have the air pressure of 40-120PSI.
Brief description of the drawings
Fig. 1 is plasma reactor overall schematic of the present invention;
Fig. 2 is substrate lifting device schematic diagram of the present invention;
Fig. 3 is cylinder schematic diagram in substrate lifting device of the present invention.
Embodiment
Below in conjunction with Fig. 1 and 2, describe the embodiment of the present invention in detail.
As shown in Figure 1, in plasma reactor 100 of the present invention, comprise pedestal 22, on pedestal 22, be fixed with substrate holding apparatus as electrostatic chuck 21, on electrostatic chuck 21, be fixed with pending substrate 50.Gas spray 11 is simultaneously relative with pedestal 22 as top electrode, and is fixed on reactor head.Gas spray 11 is connected to source of the gas 110 by gas pipeline.An edge ring 10 is around substrate 50 and substrate holding apparatus 21.At least one radio-frequency power supply provides rf electric field to the bottom electrode in pedestal.
Be illustrated in figure 2 substrate lifting device concrete in pedestal 22 the first embodiment schematic diagram.Comprise that at pedestal 22 bottom electrode 40 is electrically connected at least one radio-frequency power supply.A gas pipeline 301 is connected to a cold gas body source through bottom electrode 40 and electrostatic chuck 21, make refrigerating gas flow to the space forming between the lower surface of pending substrate 50 and electrostatic chuck upper surface, to control the temperature of substrate in plasma process, refrigerating gas can be the gases such as helium.In pedestal, also comprise substrate hoisting system of the present invention, this hoisting system comprises multiple lifting pins 210, and lifting pin is moved up and down by cylinder 206 drivings that are positioned at pin two 10 belows.By the air pressure in adjusting cylinders 206, piston in cylinder being moved up and down drives described pin two 10 to move up and down.Cylinder 206 comprises that at least two gas inlet and outlets are to drive the piston in cylinder to move up and down.Lifting gas source 200 outputs have more anticyclonic lifting gas as clean dry air (CDA), are connected to a gases at high pressure output 205 by the first valve 201.A barometric control unit 202, can regulate the gases at high pressure of exporting from gases at high pressure output 205, and exports first gas inlet and outlet 207 of a stable low-pressure gas to described cylinder 206.Second valve 203 is connected between the first gas inlet and outlet 207 of gases at high pressure output 205 and cylinder.On described lifting pin, can also comprise that at least one station location marker device 212 is as a projecting block or a groove or a color block etc., the known any setting being identified that is different from pin other parts of insider can be used as station location marker device 212.Relative with station location marker device 212, be a position identification device 214, be used for identifying the position signalling of described station location marker device 212.Obtain the lift location of lifting pin by the identification of position signalling, lift location signal is admitted to the controller of plasma reactor, as the initial signal of some actions of plasma reactor.
The step that substrate of the present invention departs from from electrostatic chuck comprises: first make lifting pin 210 in ground state, then open the first valve 201, close the second valve 203, make gases at high pressure be conditioned the first gas inlet and outlet 207 that is input to cylinder 206 after decompression.Cylinder 206 drives multiple lifting pins 210 to move up slowly until contact the back side of substrate 50 along with cylinder internal gas pressure promotes gradually after input low-pressure gas.Can being in optimized selection of the gas atmosphere that barometric control unit 202 is exported, to ensure that under low-pressure gas output state lifting pin can bursting be still in the substrate 50 of Electrostatic Absorption state.Original helium that substrate is carried out in cooling gas pipeline 301 is pumped to ensure not drift about in the time that substrate departs from electrostatic chuck.Pin adopts electric conducting material to make and in ground state, is accumulated in the electric charge on substrate 50 so just start release after contact substrate 50.Passing through regular hour 1-3 second, after 2 seconds, the electric charge of accumulation is released substantially, and lifting pin can make substrate depart from electrostatic chuck 21, and rises to the first height, and first can be highly 1-3mm, as typical 1mm.Arrive first and highly represent that substrate has successfully departed from from electrostatic chuck.Station location marker device 212 rises along with the rising of lifting pin, is identified rear transmission position signalling to controller by position identification device 214, and the position signalling that lifting pin is risen to the first height by controller, as triggering signal, is controlled the second valve 203 open-minded.After the second valve 203 is opened, gases at high pressure pass into the first gas inlet and outlet 207 of cylinder 206.Along with gases at high pressure pass into cylinder 206, lifting pin 210 from first highly again to rise to second height.Second highly can arrange according to the position of subsequent step type arm district substrate, such as being the height that is greater than 10mm, as 13mm.In the time of the second height, mechanical arm stretches into plasma reactor 100 and takes the substrate that is given rise to the second height by lifting pin away.Whole substrate detach procedure finishes, and waits for that next substrate sends into and carry out plasma treatment.
In the present invention, as shown in Figure 3, cylinder 206 comprises a closed cylinder wall to the structure of cylinder, comprises an airtight piston 208 that can move up and down in cylinder wall, and cylinder interior is divided into upper space and lower space.Bottom is seen on the cylinder wall in space and is comprised a gas inlet and outlet 207, comprises a gas inlet and outlet 209 on the cylinder wall of upper space.In the time that lower space passes into a large amount of gas, piston 208 rises, and drives the lifting pin being fixed on piston to rise.In the time that lifting completes, gas enters upper space from gas inlet and outlet 209, and the gas of lower space is from importing and exporting 207 discharge cylinders.The gas of discharging from cylinder can be got back to source of the gas 200 by another pipeline as the gas of discharging from gas inlet and outlet 209 in piston uphill process, realizes recycling of gas, and the gas in the space of coming off duty too.
Realizing gas supply system of the present invention can be also other system configuration except the structure shown in Fig. 2, as source of the gas 200 by two-way independently gas pipeline be connected respectively to two gas inlet and outlets of lower space, wherein road supply gases at high pressure, a road supply low-pressure gas.Be in operation and be connected on valve on two-way gas pipeline and switch the air pressure of supply gas by control.Anyly can provide the air supply system of different air pressure gases all to belong to the present invention program to cylinder.Wherein gases at high pressure can be the air pressure of 40-120PSI, typical in 80PSI, low-pressure gas can be 10-35PSI, typical in 20PSI, concrete numerical value is considered according to the mechanical structure of amount and the lifting pin etc. of residual charge in the characteristic of electrostatic chuck, substrate, under different structures, can there is different lifting forces, different lifting force correspondences different air pressure range.
The present invention is for ensureing that lifting pin neither can be because of the excessive bursting substrate of lift in jacking process, can the lifting in a short time because lift is too small yet, and the electric discharge that wait long could be by substrate lifting.And because the concrete electric charge of actual absorption on substrate is affected by a lot of aspects, such as the processing technology difference of processing can cause electric charge difference, substrate structure difference also can cause electrostatic charge difference, such as processing is sometimes the substrate taking monocrystalline silicon as base material, what sometimes process is the middle SOI substrate containing insulating material, electrostatic chuck surface is used rear surface wearing and tearing or corrosion also can cause the difference of residual charge long-time, is difficult to so will obtain the low pressure numerical value that is fed to accurately cylinder 206.Should ensure that the speed of lifting also will ensure the effect (do not break, do not drift about) of lifting.
Second embodiment of the invention can also be fixed a stop on lifting pin 210, and pass into low-pressure gas in cylinder time, lifting pin rises and contacts substrate back, and substrate starts to discharge residual charge.Certain hour arrives certain altitude as lifting pin lifting substrate after 1-3 second, now likely may still there is electric charge at the local location of substrate, if so lifting pin fast lifting, can make still the substrate sections region in adsorbed state and be departed from by jacking position, cause substrate to break.Institute thinks that guarantee can not break because lifting pin does not promote the too fast substrate that causes, stop with on lifting pin, synchronize rising and time can be subject to stopping of a baffle plate, thereby lifting pin is slightly stopped at height and position place corresponding to this baffle plate.The setting of baffle position rests on the substrate of lifting pin upper end to be less than or equal to the first height and position place.Stopping after a bit of time (as being less than or equal to 1 second), the gas being fed in cylinder 206 switches to gases at high pressure, while baffle plate is removed, or stop contraction, and lifting pin continues to rise and makes substrate arrive second height and position that can be captured and shift out by continuation arm reaction chamber.Second embodiment of the invention can ensure that in the time of the more substrate of jacking residual charge substrate can not split by bursting being raised to before the first height, although have the pause of a bit of time in the middle of lifting, but with respect to the time of whole substrate detach procedure, can not cause very large time delay, guarantee to demonstrate,prove the success rate departing from and improved controllability.
Stop described in second embodiment of the invention can be the protuberance that is fixed on lifting pin one and has sufficient mechanical strength, can be that conductor or ceramic material are made.The baffle plate corresponding with it can be also that similar material is made, and stops the fast rise of lifting pin one step in the position of setting.Baffle plate is fixed on and in pedestal, comprises a travel mechanism, can remove the stopping of stop after stop touching baffle plate certain hour, makes lifting pin continue to rise.Travel mechanism can be that motor drives or other air cylinder driven, stops or discharges stop and all belong to implementation of the present invention as long as can realize baffle plate.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (12)
1. a plasma processor, comprising:
A reaction chamber, comprises a pedestal in reaction chamber, pedestal top comprises an electrostatic chuck, and pending substrate is placed on electrostatic chuck, also comprises that a refrigerating gas supply line is to substrate lower surface supply refrigerating gas in described pedestal.
Pedestal bottom comprises a cylinder, in cylinder, comprise a piston, described piston is connected to described multiple lifting pin, multiple liftings hole site in the electrostatic chuck of described lifting pin and pedestal top is corresponding, it is characterized in that: described cylinder is connected to an air supply system, described air supply system provides the gas of high pressure and two kinds of air pressure of low pressure to cylinder, and in the time that air supply system provides low-pressure gas to cylinder, lifting pin top has the first height and position; When air supply system provides gases at high pressure to cylinder, lifting pin top has the second height and position, and wherein said lifting pin is electrically connected to earth terminal.
2. plasma processor as claimed in claim 1, it is characterized in that: described air supply system comprises that a source of the gas provides stable gases at high pressure and a barostat to receive the gases at high pressure of source of the gas the low-pressure gas at output stable output from input, also comprises that a by-pass switch is connected to input and the output of described barostat.
3. plasma processor as claimed in claim 2, is characterized in that: in described air supply system, between barostat input and source of the gas, be also in series with a valve.
4. plasma processor as claimed in claim 1, is characterized in that: on described lifting pin, be fixed with a station location marker device.
5. plasma processor as claimed in claim 4, is characterized in that: described plasma processor also comprises a position identification device, corresponding with described station location marker device and read positional information.
6. plasma processor as claimed in claim 1, is characterized in that: on described lifting pin, is fixed with a stop, in pedestal, is also fixed with a removable baffle plate in pin uphill process, and can selective blocking or discharge described stop.
7. plasma processor as claimed in claim 1, it is characterized in that: described cylinder comprises that it is upper space and lower space that a piston is separated cylinder interior space, lower space is connected to described air supply system by first gas inlet and outlet, and inputs described gases at high pressure or low-pressure gas; Upper space is discharged upper space by the second gas inlet and outlet by gas, and described piston is connected to the moving described lifting pin of described lift tube tape and rises or decline.
8. the operation method of a plasma processor, described plasma processor comprises: a reaction chamber, in reaction chamber, comprise a pedestal, pedestal top comprises an electrostatic chuck, pending substrate is placed on electrostatic chuck, also comprises that a refrigerating gas supply line is to substrate lower surface supply refrigerating gas in described pedestal, and described pedestal also comprises a cylinder, accept to move up and down from the multiple lifting pins of gas-powered of gas supply system, the treating method comprises step:
Provide processing gas to enter plasma processor, electricity combustion plasma is processed substrate;
Extinguish plasma;
Gas supply system provides low-pressure gas to cylinder, makes rise and contact substrate back in the lifting pin of state electrical ground;
When lifting pin lifting substrate to the first height, gas supply system provides gases at high pressure to make lifting pin rise to the second height to cylinder;
Remove substrate.
9. a kind of plasma processor operation method as claimed in claim 8, is characterized in that: also comprise that step is before substrate described in the lifting of lifting pin, extract the refrigerating gas in cooling air pipe out.
10. a kind of plasma processor operation method as claimed in claim 8, is characterized in that: described lifting pin contact substrate back is lifted to first to substrate highly needs 1-3 second.
11. a kind of plasma processor operation methods as claimed in claim 8, is characterized in that: described first is highly less than or equal to 1mm, and second is highly greater than 10mm is less than 15mm.
The operation method of 12. a kind of plasma reactors as claimed in claim 8, is characterized in that: described low-pressure gas has the air pressure of 10-35PSI, and described gases at high pressure have the air pressure of 40-120PSI.
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| CN106876237A (en) * | 2015-12-10 | 2017-06-20 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus and method for being provided with feedback de-clamping system |
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| CN110297170A (en) * | 2019-06-24 | 2019-10-01 | 深圳市森美协尔科技有限公司 | A kind of wafer test gearshift and wafer test board |
| CN112071801A (en) * | 2020-09-16 | 2020-12-11 | 北京北方华创微电子装备有限公司 | Thimble lifting device and semiconductor process cavity |
| CN114070197A (en) * | 2021-11-26 | 2022-02-18 | 阿特斯阳光电力集团股份有限公司 | Test method of photovoltaic module |
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| CN114070197B (en) * | 2021-11-26 | 2024-04-16 | 阿特斯阳光电力集团股份有限公司 | Testing method of photovoltaic module |
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| CN103903947B (en) | 2016-05-11 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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