JP2013161795A5 - - Google Patents

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JP2013161795A5
JP2013161795A5 JP2013031500A JP2013031500A JP2013161795A5 JP 2013161795 A5 JP2013161795 A5 JP 2013161795A5 JP 2013031500 A JP2013031500 A JP 2013031500A JP 2013031500 A JP2013031500 A JP 2013031500A JP 2013161795 A5 JP2013161795 A5 JP 2013161795A5
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JP
Japan
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detector
sample
calibration factor
calculating
material type
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JP2013031500A
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Japanese (ja)
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JP5793155B2 (ja
JP2013161795A (ja
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Priority claimed from US13/365,238 external-priority patent/US8604427B2/en
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JP2013031500A 2012-02-02 2013-02-01 走査電子顕微鏡画像を用いた３次元マッピング Active JP5793155B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/365,238 2012-02-02
US13/365,238 US8604427B2 (en) 2012-02-02 2012-02-02 Three-dimensional mapping using scanning electron microscope images

Related Child Applications (1)

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JP2014171154A Division JP6152077B2 (ja) 2012-02-02 2014-08-26 走査電子顕微鏡画像を用いた３次元マッピング

Publications (3)

Publication Number Publication Date
JP2013161795A JP2013161795A (ja) 2013-08-19
JP2013161795A5 true JP2013161795A5 (https=) 2014-09-18
JP5793155B2 JP5793155B2 (ja) 2015-10-14

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JP2013031500A Active JP5793155B2 (ja) 2012-02-02 2013-02-01 走査電子顕微鏡画像を用いた３次元マッピング
JP2014171154A Active JP6152077B2 (ja) 2012-02-02 2014-08-26 走査電子顕微鏡画像を用いた３次元マッピング

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Country Status (4)

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US (3) US8604427B2 (https=)
JP (2) JP5793155B2 (https=)
KR (2) KR101477014B1 (https=)
TW (2) TWI493180B (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8604427B2 (en) * 2012-02-02 2013-12-10 Applied Materials Israel, Ltd. Three-dimensional mapping using scanning electron microscope images
US9858658B2 (en) 2012-04-19 2018-01-02 Applied Materials Israel Ltd Defect classification using CAD-based context attributes
US9595091B2 (en) 2012-04-19 2017-03-14 Applied Materials Israel, Ltd. Defect classification using topographical attributes
US20140095097A1 (en) * 2012-09-28 2014-04-03 International Business Machines Corporation System and method for determining line edge roughness
US8901492B1 (en) * 2013-07-16 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional semiconductor image reconstruction apparatus and method
US9588066B2 (en) * 2014-01-23 2017-03-07 Revera, Incorporated Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS)
CN111766259B (zh) * 2014-06-24 2023-07-28 诺威量测设备公司 使用xps和xrf技术的多层和多过程信息的前馈
US9966225B2 (en) 2014-07-28 2018-05-08 Hitachi, Ltd. Charged particle beam device, simulation method, and simulation device
US9715724B2 (en) * 2014-07-29 2017-07-25 Applied Materials Israel Ltd. Registration of CAD data with SEM images
ES2567379B1 (es) * 2014-10-21 2017-02-03 Universidad Carlos Iii De Madrid Microscopio y procedimiento para la generación de imágenes 3D de una colección demuestras
KR102566134B1 (ko) 2015-12-07 2023-08-10 삼성전자주식회사 반도체 소자의 3d 프로파일링 시스템 및 이의 동작 방법
KR102149947B1 (ko) * 2017-04-27 2020-09-02 킹 압둘라 유니버시티 오브 사이언스 앤드 테크놀로지 투과 전자 현미경 샘플 정렬 시스템 및 방법
US10748272B2 (en) * 2017-05-18 2020-08-18 Applied Materials Israel Ltd. Measuring height difference in patterns on semiconductor wafers
JP6851345B2 (ja) * 2018-05-24 2021-03-31 日本電子株式会社 荷電粒子線装置および画像取得方法
LU100806B1 (en) * 2018-05-30 2019-12-02 Luxembourg Inst Science & Tech List Joint nanoscale three-dimensional imaging and chemical analysis
US11139142B2 (en) * 2019-05-23 2021-10-05 Applied Materials, Inc. High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
CN112449722B (zh) * 2019-07-04 2024-04-09 株式会社日立高新技术 尺寸测量装置、尺寸测量程序及半导体制造系统
JP7173937B2 (ja) 2019-08-08 2022-11-16 株式会社日立ハイテク 荷電粒子線装置
JP7159128B2 (ja) 2019-08-08 2022-10-24 株式会社日立ハイテク 荷電粒子線装置
KR102771899B1 (ko) 2019-09-03 2025-02-25 삼성전자주식회사 주사 전자 현미경 장치 및 그의 동작 방법
JP2023535192A (ja) * 2020-07-29 2023-08-16 エーエスエムエル ネザーランズ ビー．ブイ． 検査装置における信号電子検出のためのシステム及び方法
JP7364540B2 (ja) * 2020-08-05 2023-10-18 株式会社日立ハイテク 画像処理システム
US12057336B2 (en) 2020-12-16 2024-08-06 Samsung Electronics Co., Ltd. Estimating heights of defects in a wafer by scaling a 3D model using an artificial neural network
US11626267B2 (en) * 2021-04-28 2023-04-11 Applied Materials Israel Ltd. Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage
JP7323574B2 (ja) * 2021-06-03 2023-08-08 日本電子株式会社 荷電粒子線装置および画像取得方法
CN120121657B (zh) * 2025-03-11 2025-11-25 浙江大学 一种基于扫描电镜的原位三维表面重建方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073894B1 (de) * 1981-09-01 1986-01-29 Hüls Aktiengesellschaft Verfahren zur Gewinnung von Öl aus einer unterirdischen Lagerstätte
JP3499690B2 (ja) * 1996-09-13 2004-02-23 株式会社東芝 荷電粒子顕微鏡
DE69901787T2 (de) * 1999-03-31 2002-11-21 Advantest Corp., Tokio/Tokyo Verfahren und Vorrichtung zur Abbildung eines Oberflächenpotentials
US6573498B1 (en) * 2000-06-30 2003-06-03 Advanced Micro Devices, Inc. Electric measurement of reference sample in a CD-SEM and method for calibration
JP2004534360A (ja) * 2001-06-15 2004-11-11 株式会社荏原製作所 電子線装置及びその電子線装置を用いたデバイスの製造方法
DE10156275B4 (de) * 2001-11-16 2006-08-03 Leo Elektronenmikroskopie Gmbh Detektoranordnung und Detektionsverfahren
US6930308B1 (en) 2002-07-11 2005-08-16 Kla-Tencor Technologies Corporation SEM profile and surface reconstruction using multiple data sets
KR101015116B1 (ko) * 2002-09-18 2011-02-16 에프이아이 컴파니 하전(荷電) 입자 빔 시스템
JP3802525B2 (ja) * 2003-10-10 2006-07-26 株式会社東芝 荷電粒子顕微鏡
US7067808B2 (en) * 2003-10-14 2006-06-27 Topcon Corporation Electron beam system and electron beam measuring and observing method
JP4229799B2 (ja) * 2003-10-14 2009-02-25 株式会社トプコン 電子線測定または観察装置、電子線測定または観察方法
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP4966719B2 (ja) * 2007-04-11 2012-07-04 株式会社日立ハイテクノロジーズ 校正用標準部材及びその作製方法、並びにそれを用いた電子ビーム装置
JP4936985B2 (ja) * 2007-05-14 2012-05-23 株式会社日立ハイテクノロジーズ 走査電子顕微鏡およびそれを用いた三次元形状測定装置
KR101050438B1 (ko) * 2008-11-10 2011-07-19 주식회사 코캄 안전성이 우수한 리튬 이차전지용 양극 활물질 및 그 제조방법과 이를 포함하는 리튬 이차전지
EP2287669A1 (en) * 2009-06-26 2011-02-23 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
US8692214B2 (en) * 2009-08-12 2014-04-08 Hermes Microvision, Inc. Charged particle beam inspection method
US8790863B2 (en) * 2010-10-28 2014-07-29 President And Fellows Of Harvard College Electron beam processing with condensed ice
DE102010053194A1 (de) * 2010-12-03 2012-06-06 Carl Zeiss Nts Gmbh Teilchenstrahlgerät mit Ablenksystem
US20120223227A1 (en) * 2011-03-04 2012-09-06 Chien-Huei Chen Apparatus and methods for real-time three-dimensional sem imaging and viewing of semiconductor wafers
US8604427B2 (en) * 2012-02-02 2013-12-10 Applied Materials Israel, Ltd. Three-dimensional mapping using scanning electron microscope images
US8779357B1 (en) * 2013-03-15 2014-07-15 Fei Company Multiple image metrology

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