JP2013157044A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2013157044A
JP2013157044A JP2012014712A JP2012014712A JP2013157044A JP 2013157044 A JP2013157044 A JP 2013157044A JP 2012014712 A JP2012014712 A JP 2012014712A JP 2012014712 A JP2012014712 A JP 2012014712A JP 2013157044 A JP2013157044 A JP 2013157044A
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JP
Japan
Prior art keywords
control signal
bit line
memory cell
circuit
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012014712A
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English (en)
Japanese (ja)
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JP2013157044A5 (https=
Inventor
Naoyuki Miyamoto
尚幸 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Priority to JP2012014712A priority Critical patent/JP2013157044A/ja
Priority to US13/748,433 priority patent/US9245612B2/en
Publication of JP2013157044A publication Critical patent/JP2013157044A/ja
Publication of JP2013157044A5 publication Critical patent/JP2013157044A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2012014712A 2012-01-27 2012-01-27 半導体装置 Withdrawn JP2013157044A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012014712A JP2013157044A (ja) 2012-01-27 2012-01-27 半導体装置
US13/748,433 US9245612B2 (en) 2012-01-27 2013-01-23 Semiconductor device having bit lines hierarchically structured

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012014712A JP2013157044A (ja) 2012-01-27 2012-01-27 半導体装置

Publications (2)

Publication Number Publication Date
JP2013157044A true JP2013157044A (ja) 2013-08-15
JP2013157044A5 JP2013157044A5 (https=) 2015-02-26

Family

ID=48870078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012014712A Withdrawn JP2013157044A (ja) 2012-01-27 2012-01-27 半導体装置

Country Status (2)

Country Link
US (1) US9245612B2 (https=)
JP (1) JP2013157044A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9552866B2 (en) 2014-03-10 2017-01-24 Micron Technology, Inc. Semiconductor device including subword driver circuit

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004926B2 (en) * 2008-02-05 2011-08-23 Marvell World Trade Ltd. System and method for memory array decoding
JP2016170303A (ja) * 2015-03-13 2016-09-23 シナプティクス・ジャパン合同会社 半導体装置及び電子機器
ITUA20161478A1 (it) 2016-03-09 2017-09-09 St Microelectronics Srl Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile
US9542980B1 (en) * 2016-03-29 2017-01-10 Nanya Technology Corp. Sense amplifier with mini-gap architecture and parallel interconnect
US10468087B2 (en) * 2016-07-28 2019-11-05 Micron Technology, Inc. Apparatuses and methods for operations in a self-refresh state
WO2018125135A1 (en) * 2016-12-29 2018-07-05 Intel Corporation Sram with hierarchical bit lines in monolithic 3d integrated chips
TWI842855B (zh) * 2019-03-29 2024-05-21 日商半導體能源研究所股份有限公司 半導體裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111083A (ja) * 1993-08-20 1995-04-25 Mitsubishi Electric Corp 半導体記憶装置
JP4909619B2 (ja) * 2006-04-13 2012-04-04 パナソニック株式会社 半導体記憶装置
JP5222619B2 (ja) 2008-05-02 2013-06-26 株式会社日立製作所 半導体装置
JP5518313B2 (ja) 2008-08-29 2014-06-11 ピーエスフォー ルクスコ エスエイアールエル センスアンプ回路及び半導体記憶装置
JP2011034614A (ja) * 2009-07-30 2011-02-17 Elpida Memory Inc 半導体装置及びこれを備えるシステム
JP5666108B2 (ja) * 2009-07-30 2015-02-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びこれを備えるシステム
JP2011129237A (ja) * 2009-12-21 2011-06-30 Elpida Memory Inc 半導体装置及び半導体記憶装置
JP2011175719A (ja) * 2010-02-25 2011-09-08 Elpida Memory Inc 半導体装置
JP2012099195A (ja) * 2010-11-04 2012-05-24 Elpida Memory Inc 半導体装置
JP2012123893A (ja) * 2010-11-19 2012-06-28 Elpida Memory Inc 半導体装置
JP2012123878A (ja) * 2010-12-09 2012-06-28 Elpida Memory Inc 半導体装置及びその制御方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9552866B2 (en) 2014-03-10 2017-01-24 Micron Technology, Inc. Semiconductor device including subword driver circuit
US10332584B2 (en) 2014-03-10 2019-06-25 Micron Technology, Inc. Semiconductor device including subword driver circuit

Also Published As

Publication number Publication date
US9245612B2 (en) 2016-01-26
US20130194857A1 (en) 2013-08-01

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