JP2013145799A5 - - Google Patents
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- Publication number
- JP2013145799A5 JP2013145799A5 JP2012005367A JP2012005367A JP2013145799A5 JP 2013145799 A5 JP2013145799 A5 JP 2013145799A5 JP 2012005367 A JP2012005367 A JP 2012005367A JP 2012005367 A JP2012005367 A JP 2012005367A JP 2013145799 A5 JP2013145799 A5 JP 2013145799A5
- Authority
- JP
- Japan
- Prior art keywords
- degrees
- laser light
- optical waveguide
- semipolar
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 12
- 230000003287 optical effect Effects 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 5
- 150000004767 nitrides Chemical class 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012005367A JP2013145799A (ja) | 2012-01-13 | 2012-01-13 | 半導体レーザ素子、及び、半導体レーザ素子の製造方法 |
| CN2013100038771A CN103208740A (zh) | 2012-01-13 | 2013-01-06 | 激光二极管以及制造激光二极管的方法 |
| US13/735,746 US20130182734A1 (en) | 2012-01-13 | 2013-01-07 | Laser diode and method of manufacturing laser diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012005367A JP2013145799A (ja) | 2012-01-13 | 2012-01-13 | 半導体レーザ素子、及び、半導体レーザ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013145799A JP2013145799A (ja) | 2013-07-25 |
| JP2013145799A5 true JP2013145799A5 (enExample) | 2014-10-02 |
Family
ID=48755875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012005367A Pending JP2013145799A (ja) | 2012-01-13 | 2012-01-13 | 半導体レーザ素子、及び、半導体レーザ素子の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20130182734A1 (enExample) |
| JP (1) | JP2013145799A (enExample) |
| CN (1) | CN103208740A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016113071A1 (de) | 2016-07-15 | 2018-01-18 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode |
| CN108376731A (zh) * | 2018-02-07 | 2018-08-07 | 赛富乐斯股份有限公司 | 发光装置及其制造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003264340A (ja) * | 2002-03-11 | 2003-09-19 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体マルチストライプレーザ及び光ファイバシステム |
| WO2008100505A1 (en) * | 2007-02-12 | 2008-08-21 | The Regents Of The University Of California | Optimization of laser bar orientation for nonpolar and semipolar (ga,ai,in,b)n diode lasers |
| US8284810B1 (en) * | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
| JP4475357B1 (ja) * | 2009-06-17 | 2010-06-09 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
| US7933303B2 (en) * | 2009-06-17 | 2011-04-26 | Sumitomo Electric Industries, Ltd. | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device |
| JP5233936B2 (ja) * | 2009-09-24 | 2013-07-10 | 住友電気工業株式会社 | 窒化物半導体基板 |
| JP2013510441A (ja) * | 2009-11-05 | 2013-03-21 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | エッチングされたミラーを伴う半極性｛２０−２１｝ｉｉｉ族窒化物系レーザダイオード |
| JP5589380B2 (ja) * | 2009-12-28 | 2014-09-17 | 日亜化学工業株式会社 | 窒化物半導体素子 |
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2012
- 2012-01-13 JP JP2012005367A patent/JP2013145799A/ja active Pending
-
2013
- 2013-01-06 CN CN2013100038771A patent/CN103208740A/zh active Pending
- 2013-01-07 US US13/735,746 patent/US20130182734A1/en not_active Abandoned