CN103208740A - 激光二极管以及制造激光二极管的方法 - Google Patents

激光二极管以及制造激光二极管的方法 Download PDF

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Publication number
CN103208740A
CN103208740A CN2013100038771A CN201310003877A CN103208740A CN 103208740 A CN103208740 A CN 103208740A CN 2013100038771 A CN2013100038771 A CN 2013100038771A CN 201310003877 A CN201310003877 A CN 201310003877A CN 103208740 A CN103208740 A CN 103208740A
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CN
China
Prior art keywords
laser
face
laser diode
resonator
electrode
Prior art date
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Pending
Application number
CN2013100038771A
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English (en)
Chinese (zh)
Inventor
滨口达史
高木慎平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Sumitomo Electric Industries Ltd
Original Assignee
Sony Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp, Sumitomo Electric Industries Ltd filed Critical Sony Corp
Publication of CN103208740A publication Critical patent/CN103208740A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
CN2013100038771A 2012-01-13 2013-01-06 激光二极管以及制造激光二极管的方法 Pending CN103208740A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-005367 2012-01-13
JP2012005367A JP2013145799A (ja) 2012-01-13 2012-01-13 半導体レーザ素子、及び、半導体レーザ素子の製造方法

Publications (1)

Publication Number Publication Date
CN103208740A true CN103208740A (zh) 2013-07-17

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Country Link
US (1) US20130182734A1 (enExample)
JP (1) JP2013145799A (enExample)
CN (1) CN103208740A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108376731A (zh) * 2018-02-07 2018-08-07 赛富乐斯股份有限公司 发光装置及其制造方法
CN109478766A (zh) * 2016-07-15 2019-03-15 欧司朗光电半导体有限公司 半导体激光二极管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080198881A1 (en) * 2007-02-12 2008-08-21 The Regents Of The University Of California OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS
CN101984774A (zh) * 2009-06-17 2011-03-09 住友电气工业株式会社 Ⅲ族氮化物半导体激光器元件及ⅲ族氮化物半导体激光器元件的制作方法
JP2011068503A (ja) * 2009-09-24 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体基板
US20110170569A1 (en) * 2009-11-05 2011-07-14 The Regents Of The University Of California Semipolar iii-nitride laser diodes with etched mirrors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264340A (ja) * 2002-03-11 2003-09-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体マルチストライプレーザ及び光ファイバシステム
US8284810B1 (en) * 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US7933303B2 (en) * 2009-06-17 2011-04-26 Sumitomo Electric Industries, Ltd. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
JP5589380B2 (ja) * 2009-12-28 2014-09-17 日亜化学工業株式会社 窒化物半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080198881A1 (en) * 2007-02-12 2008-08-21 The Regents Of The University Of California OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS
CN101984774A (zh) * 2009-06-17 2011-03-09 住友电气工业株式会社 Ⅲ族氮化物半导体激光器元件及ⅲ族氮化物半导体激光器元件的制作方法
JP2011068503A (ja) * 2009-09-24 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体基板
US20110170569A1 (en) * 2009-11-05 2011-07-14 The Regents Of The University Of California Semipolar iii-nitride laser diodes with etched mirrors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ATSUSHI A. YAMAGUCHI等: "A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells", 《APPLIED PHYSICS LETTERS》 *
YOHEI ENYA等: "531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates", 《APPLIED PHYSICS EXPRESS》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109478766A (zh) * 2016-07-15 2019-03-15 欧司朗光电半导体有限公司 半导体激光二极管
CN109478766B (zh) * 2016-07-15 2021-03-12 欧司朗光电半导体有限公司 半导体激光二极管
US10985529B2 (en) 2016-07-15 2021-04-20 Osram Oled Gmbh Semiconductor laser diode
CN108376731A (zh) * 2018-02-07 2018-08-07 赛富乐斯股份有限公司 发光装置及其制造方法

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JP2013145799A (ja) 2013-07-25
US20130182734A1 (en) 2013-07-18

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