JP2013133234A - インゴット、基板および基板群 - Google Patents
インゴット、基板および基板群 Download PDFInfo
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- JP2013133234A JP2013133234A JP2011282799A JP2011282799A JP2013133234A JP 2013133234 A JP2013133234 A JP 2013133234A JP 2011282799 A JP2011282799 A JP 2011282799A JP 2011282799 A JP2011282799 A JP 2011282799A JP 2013133234 A JP2013133234 A JP 2013133234A
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- ingot
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- silicon carbide
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- 239000000758 substrate Substances 0.000 title claims abstract description 131
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000012535 impurity Substances 0.000 claims abstract description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000005092 sublimation method Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 47
- 239000004065 semiconductor Substances 0.000 abstract description 36
- 238000004519 manufacturing process Methods 0.000 description 26
- 239000013078 crystal Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 24
- 238000009826 distribution Methods 0.000 description 11
- 239000000843 powder Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000010730 cutting oil Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Abstract
【解決手段】インゴット1は、単結晶炭化珪素からなり、p型不純物を含むインゴットである。インゴット1の成長方向における厚みは、10mm以上である。また、インゴット1の平均キャリア密度は、1×1016cm−3以上である。また、インゴット1の成長方向におけるキャリア密度の変動は、平均キャリア密度の±80%以下である。
【選択図】図1
Description
以上の説明は、以下に付記する特徴を含む。
単結晶炭化珪素からなる種基板と、炭化珪素源と、AlとBとを含む混合物とを準備する工程と、
前記炭化珪素源および前記混合物を加熱昇華させて前記種基板上に結晶成長させる工程とを備える、インゴットの製造方法。
(付記2)
前記結晶成長させる工程では、前記炭化珪素源および前記混合物の各々は、互いに連通した異なる容器内に配置されて加熱される、付記1に記載のインゴットの製造方法。
前記結晶成長させる工程では、前記混合物は、前記炭化珪素源よりも高温で加熱される、付記2に記載のインゴットの製造方法。
Claims (11)
- 単結晶炭化珪素からなり、p型不純物を含むインゴットであって、
成長方向における厚みは、10mm以上であり、
平均キャリア密度は、1×1016cm−3以上であり、
成長方向におけるキャリア密度の変動は、前記平均キャリア密度の±80%以下である、インゴット。 - アルミニウムをp型不純物として含む、請求項1に記載のインゴット。
- 昇華法により形成される、請求項1または2に記載のインゴット。
- 前記キャリア密度は、成長方向において単調に変動している、請求項1〜3のいずれか1項に記載のインゴット。
- 成長方向における前記キャリア密度の変動は、前記平均キャリア密度の±50%以下である、請求項1〜4のいずれか1項に記載のインゴット。
- 成長方向における前記キャリア密度の変動は、前記平均キャリア密度の±20%以下である、請求項1〜4のいずれか1項に記載のインゴット。
- 請求項1〜6のいずれか1項に記載のインゴットより採取される、基板。
- 主面内におけるキャリア密度の変動は、平均キャリア密度の±20%以下である、請求項7に記載の基板。
- 主面の面積は、100cm2以上である、請求項7または8に記載の基板。
- 反りは、20μm以下である、請求項7〜9のいずれか1項に記載の基板。
- 一のインゴットより採取される基板群であって、
前記基板群の平均キャリア密度は、1×1016cm−3以上であり、
前記基板群を構成する基板間のキャリア密度のばらつきは、前記基板群の平均キャリア密度の±80%以下である、基板群。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011282799A JP5994248B2 (ja) | 2011-12-26 | 2011-12-26 | インゴット、基板および基板群 |
US13/681,564 US20130161647A1 (en) | 2011-12-26 | 2012-11-20 | Ingot, substrate, and substrate group |
Applications Claiming Priority (1)
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JP2011282799A JP5994248B2 (ja) | 2011-12-26 | 2011-12-26 | インゴット、基板および基板群 |
Publications (2)
Publication Number | Publication Date |
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JP2013133234A true JP2013133234A (ja) | 2013-07-08 |
JP5994248B2 JP5994248B2 (ja) | 2016-09-21 |
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JP2011282799A Active JP5994248B2 (ja) | 2011-12-26 | 2011-12-26 | インゴット、基板および基板群 |
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US (1) | US20130161647A1 (ja) |
JP (1) | JP5994248B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017069334A (ja) * | 2015-09-29 | 2017-04-06 | 新日鐵住金株式会社 | 炭化珪素単結晶基板の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114000197A (zh) * | 2015-09-24 | 2022-02-01 | 帕里杜斯有限公司 | 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术 |
JP2020191164A (ja) * | 2019-05-20 | 2020-11-26 | 東芝ライテック株式会社 | ヒータ |
DE102020131840A1 (de) | 2020-12-01 | 2022-06-02 | Friedrich-Alexander-Universität Erlangen-Nürnberg, Körperschaft des öffentlichen Rechts | Verfahren zur herstellung eines einkristalls in einem wachstumstiegel |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6350399A (ja) * | 1986-08-18 | 1988-03-03 | Sanyo Electric Co Ltd | p型SiC単結晶の成長方法 |
JPS6385097A (ja) * | 1986-09-25 | 1988-04-15 | Sanyo Electric Co Ltd | SiC単結晶の成長方法 |
JPH04193799A (ja) * | 1990-11-27 | 1992-07-13 | Sharp Corp | 炭化珪素単結晶の製造方法 |
JPH09142995A (ja) * | 1995-11-22 | 1997-06-03 | Nippon Steel Corp | P型単結晶炭化珪素の製造方法 |
JP2006248825A (ja) * | 2005-03-09 | 2006-09-21 | Denso Corp | 炭化珪素インゴットおよびその製造方法 |
JP2009256155A (ja) * | 2008-04-21 | 2009-11-05 | Nippon Steel Corp | 炭化珪素単結晶インゴット及びその製造方法 |
JP2011219296A (ja) * | 2010-04-07 | 2011-11-04 | Nippon Steel Corp | 炭化珪素単結晶ウェハ |
Family Cites Families (2)
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JP5068423B2 (ja) * | 2004-10-13 | 2012-11-07 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法 |
JP2007320790A (ja) * | 2006-05-30 | 2007-12-13 | Nippon Steel Corp | 炭化珪素単結晶の製造方法、炭化珪素単結晶インゴット及び炭化珪素単結晶基板 |
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2011
- 2011-12-26 JP JP2011282799A patent/JP5994248B2/ja active Active
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2012
- 2012-11-20 US US13/681,564 patent/US20130161647A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6350399A (ja) * | 1986-08-18 | 1988-03-03 | Sanyo Electric Co Ltd | p型SiC単結晶の成長方法 |
JPS6385097A (ja) * | 1986-09-25 | 1988-04-15 | Sanyo Electric Co Ltd | SiC単結晶の成長方法 |
JPH04193799A (ja) * | 1990-11-27 | 1992-07-13 | Sharp Corp | 炭化珪素単結晶の製造方法 |
JPH09142995A (ja) * | 1995-11-22 | 1997-06-03 | Nippon Steel Corp | P型単結晶炭化珪素の製造方法 |
JP2006248825A (ja) * | 2005-03-09 | 2006-09-21 | Denso Corp | 炭化珪素インゴットおよびその製造方法 |
JP2009256155A (ja) * | 2008-04-21 | 2009-11-05 | Nippon Steel Corp | 炭化珪素単結晶インゴット及びその製造方法 |
JP2011219296A (ja) * | 2010-04-07 | 2011-11-04 | Nippon Steel Corp | 炭化珪素単結晶ウェハ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017069334A (ja) * | 2015-09-29 | 2017-04-06 | 新日鐵住金株式会社 | 炭化珪素単結晶基板の製造方法 |
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