JP2013102060A - 荷電粒子光学系、及びそれを用いた描画装置 - Google Patents

荷電粒子光学系、及びそれを用いた描画装置 Download PDF

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Publication number
JP2013102060A
JP2013102060A JP2011245004A JP2011245004A JP2013102060A JP 2013102060 A JP2013102060 A JP 2013102060A JP 2011245004 A JP2011245004 A JP 2011245004A JP 2011245004 A JP2011245004 A JP 2011245004A JP 2013102060 A JP2013102060 A JP 2013102060A
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JP
Japan
Prior art keywords
charged particle
optical system
electrode
electrostatic
particle optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011245004A
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English (en)
Japanese (ja)
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JP2013102060A5 (enExample
Inventor
Takahisa Kato
貴久 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011245004A priority Critical patent/JP2013102060A/ja
Priority to US13/667,337 priority patent/US8884246B2/en
Publication of JP2013102060A publication Critical patent/JP2013102060A/ja
Publication of JP2013102060A5 publication Critical patent/JP2013102060A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP2011245004A 2011-11-09 2011-11-09 荷電粒子光学系、及びそれを用いた描画装置 Withdrawn JP2013102060A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011245004A JP2013102060A (ja) 2011-11-09 2011-11-09 荷電粒子光学系、及びそれを用いた描画装置
US13/667,337 US8884246B2 (en) 2011-11-09 2012-11-02 Charged particle optical system and scribing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011245004A JP2013102060A (ja) 2011-11-09 2011-11-09 荷電粒子光学系、及びそれを用いた描画装置

Publications (2)

Publication Number Publication Date
JP2013102060A true JP2013102060A (ja) 2013-05-23
JP2013102060A5 JP2013102060A5 (enExample) 2014-12-25

Family

ID=48223079

Family Applications (1)

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JP2011245004A Withdrawn JP2013102060A (ja) 2011-11-09 2011-11-09 荷電粒子光学系、及びそれを用いた描画装置

Country Status (2)

Country Link
US (1) US8884246B2 (enExample)
JP (1) JP2013102060A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220150958A (ko) * 2020-04-06 2022-11-11 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 도구, 검사 방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
JP2016009738A (ja) * 2014-06-24 2016-01-18 株式会社東芝 半導体記憶装置の製造方法
JP2016207925A (ja) * 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
JP6883478B2 (ja) * 2017-06-22 2021-06-09 東芝デバイス＆ストレージ株式会社 半導体装置

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JPH097538A (ja) 1995-06-26 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム描画装置
US6327087B1 (en) 1998-12-09 2001-12-04 Canon Kabushiki Kaisha Optical-thin-film material, process for its production, and optical device making use of the optical-thin-film material
JP2001283756A (ja) * 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
GB2399219B (en) * 2002-01-30 2005-05-25 Univ Johns Hopkins Gating grid and method of making same
JP3862623B2 (ja) 2002-07-05 2006-12-27 キヤノン株式会社 光偏向器及びその製造方法
JP4387755B2 (ja) 2003-10-14 2009-12-24 キヤノン株式会社 偏向器アレイおよびその製造方法、ならびに該偏向器アレイを用いた荷電粒子線露光装置
EP1530229B1 (en) * 2003-11-04 2012-04-04 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Beam optical component for charged particle beams
JP2005173411A (ja) 2003-12-12 2005-06-30 Canon Inc 光偏向器
US7045794B1 (en) * 2004-06-18 2006-05-16 Novelx, Inc. Stacked lens structure and method of use thereof for preventing electrical breakdown
JP4574396B2 (ja) 2005-03-02 2010-11-04 キヤノン株式会社 光偏向器
JP2007316443A (ja) 2006-05-26 2007-12-06 Canon Inc 光偏向器、及びそれを用いた光学機器
JP5170983B2 (ja) 2006-05-30 2013-03-27 キヤノン株式会社 光偏向器、及びそれを用いた光学機器
JP2007322466A (ja) 2006-05-30 2007-12-13 Canon Inc 光偏向器、及びそれを用いた光学機器
JP4881073B2 (ja) 2006-05-30 2012-02-22 キヤノン株式会社 光偏向器、及びそれを用いた光学機器
JP2008191537A (ja) 2007-02-07 2008-08-21 Canon Inc 振動素子、及び振動素子を備える光偏向器
JP5491704B2 (ja) * 2007-05-14 2014-05-14 イーエムエス ナノファブリカツィオン アーゲー 対向電極アレイ板を有するパターン定義装置
JP2009025617A (ja) 2007-07-20 2009-02-05 Canon Inc 揺動体装置、光偏向器およびそれを用いた光学機器
JP2009122383A (ja) 2007-11-14 2009-06-04 Canon Inc 揺動体装置の製造方法、該製造方法により製造された揺動体装置によって構成される光偏向器及び光学機器
JP2009128463A (ja) 2007-11-21 2009-06-11 Canon Inc 揺動体装置の製造方法、該製造方法により製造された揺動体装置によって構成される光偏向器及び光学機器
TWI497557B (zh) * 2009-04-29 2015-08-21 Mapper Lithography Ip Bv 包含靜電偏轉器的帶電粒子光學系統
NL1036912C2 (en) 2009-04-29 2010-11-01 Mapper Lithography Ip Bv Charged particle optical system comprising an electrostatic deflector.
US8362441B2 (en) * 2009-10-09 2013-01-29 Mapper Lithography Ip B.V. Enhanced integrity projection lens assembly
JP5335654B2 (ja) 2009-12-04 2013-11-06 キヤノン株式会社 モード変換素子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220150958A (ko) * 2020-04-06 2022-11-11 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 도구, 검사 방법
JP2023519566A (ja) * 2020-04-06 2023-05-11 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子評価ツール、検査方法
JP7477635B2 (ja) 2020-04-06 2024-05-01 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子評価ツール、検査方法
KR102827815B1 (ko) * 2020-04-06 2025-07-01 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 도구, 검사 방법
US12476069B2 (en) 2020-04-06 2025-11-18 Asml Netherlands B.V. Charged particle assessment tool, inspection method

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Publication number Publication date
US8884246B2 (en) 2014-11-11
US20130112891A1 (en) 2013-05-09

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