JP2013093477A5 - - Google Patents

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Publication number
JP2013093477A5
JP2013093477A5 JP2011235436A JP2011235436A JP2013093477A5 JP 2013093477 A5 JP2013093477 A5 JP 2013093477A5 JP 2011235436 A JP2011235436 A JP 2011235436A JP 2011235436 A JP2011235436 A JP 2011235436A JP 2013093477 A5 JP2013093477 A5 JP 2013093477A5
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JP
Japan
Prior art keywords
bus line
gate bus
gate
layer
semiconductor device
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JP2011235436A
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English (en)
Japanese (ja)
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JP2013093477A (ja
JP5979530B2 (ja
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Priority to JP2011235436A priority Critical patent/JP5979530B2/ja
Priority claimed from JP2011235436A external-priority patent/JP5979530B2/ja
Priority to US13/661,471 priority patent/US9196492B2/en
Publication of JP2013093477A publication Critical patent/JP2013093477A/ja
Publication of JP2013093477A5 publication Critical patent/JP2013093477A5/ja
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JP2011235436A 2011-10-26 2011-10-26 半導体装置の製造方法 Active JP5979530B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011235436A JP5979530B2 (ja) 2011-10-26 2011-10-26 半導体装置の製造方法
US13/661,471 US9196492B2 (en) 2011-10-26 2012-10-26 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011235436A JP5979530B2 (ja) 2011-10-26 2011-10-26 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013093477A JP2013093477A (ja) 2013-05-16
JP2013093477A5 true JP2013093477A5 (https=) 2014-12-11
JP5979530B2 JP5979530B2 (ja) 2016-08-24

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JP2011235436A Active JP5979530B2 (ja) 2011-10-26 2011-10-26 半導体装置の製造方法

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US (1) US9196492B2 (https=)
JP (1) JP5979530B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239349A1 (en) * 2013-02-25 2014-08-28 International Rectifier Corporation Drain Pad Having a Reduced Termination Electric Field
CN104409431B (zh) * 2014-10-24 2017-07-04 苏州能讯高能半导体有限公司 一种半导体器件
WO2016098374A1 (ja) * 2014-12-16 2016-06-23 三菱電機株式会社 マルチフィンガトランジスタ及び半導体装置
US12464760B2 (en) 2016-03-17 2025-11-04 Macom Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
DE102016205079B4 (de) * 2016-03-29 2021-07-01 Robert Bosch Gmbh High-electron-mobility Transistor
CN108417626B (zh) * 2017-02-10 2021-07-30 台达电子工业股份有限公司 半导体装置
JP7155482B2 (ja) * 2018-09-13 2022-10-19 住友電工デバイス・イノベーション株式会社 半導体装置
EP4481813A1 (en) * 2023-06-21 2024-12-25 NXP USA, Inc. Structures for suppressing odd-mode instabilities

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2504503B2 (ja) * 1988-01-12 1996-06-05 富士通株式会社 半導体素子
JPH05275373A (ja) * 1992-03-25 1993-10-22 Sanyo Electric Co Ltd 化合物半導体装置の製造方法
JPH07161659A (ja) * 1993-12-07 1995-06-23 Nec Corp 半導体装置およびその製造方法
JPH08316744A (ja) 1995-05-17 1996-11-29 Oki Electric Ind Co Ltd 電力増幅回路
US5925901A (en) * 1997-03-21 1999-07-20 Nec Corporation Field effect transistor with plated heat sink on a fet chip
US6023086A (en) * 1997-09-02 2000-02-08 Motorola, Inc. Semiconductor transistor with stabilizing gate electrode
JP3515886B2 (ja) * 1997-09-29 2004-04-05 三菱電機株式会社 半導体装置およびその製造方法
JP3169124B2 (ja) * 1998-06-29 2001-05-21 日本電気株式会社 電界効果トランジスタおよびその製造方法
US6774449B1 (en) * 1999-09-16 2004-08-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

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