JP2013087055A - 中性子検出用途に最適化されたホウ素粉末 - Google Patents
中性子検出用途に最適化されたホウ素粉末 Download PDFInfo
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- JP2013087055A JP2013087055A JP2012228502A JP2012228502A JP2013087055A JP 2013087055 A JP2013087055 A JP 2013087055A JP 2012228502 A JP2012228502 A JP 2012228502A JP 2012228502 A JP2012228502 A JP 2012228502A JP 2013087055 A JP2013087055 A JP 2013087055A
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- boron
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- boron powder
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 168
- 238000001514 detection method Methods 0.000 title description 15
- 229910052796 boron Inorganic materials 0.000 claims abstract description 78
- 239000002245 particle Substances 0.000 claims abstract description 49
- 238000010902 jet-milling Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 abstract description 33
- 239000011248 coating agent Substances 0.000 abstract description 29
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 23
- 238000000227 grinding Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 238000003801 milling Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 5
- 239000004814 polyurethane Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010687 lubricating oil Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000002574 poison Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010725 compressor oil Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/02—Boron; Borides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Measurement Of Radiation (AREA)
Abstract
【解決手段】ホウ素粉末がホウ素供給原料をジェットミル粉砕することによって作られた結晶性ホウ素粒子を含み、約75%超の結晶性ホウ素粒子が直径約1μm未満であり、約95%超の結晶性ホウ素粒子が直径約3μm未満であり、本質的に全ての結晶性ホウ素粒子が直径約15μm未満であるか、または、全ホウ素含有率が最小約97重量%であり、全ホウ素含有率に対する10B同位体の量が最小約98重量%である、ホウ素粉末に混入した可溶性残渣の量が7.00×10-4g可溶性残渣/gホウ素未満である、ホウ素粉末。
【選択図】図2
Description
Claims (7)
- ホウ素粉末に混入した可溶性残渣の量が7.00×10-4g可溶性残渣/gホウ素未満である、ホウ素粉末。
- ホウ素粉末がホウ素供給原料をジェットミル粉砕することによって作られた結晶性ホウ素粒子を含み、
約75%超の結晶性ホウ素粒子が直径約1μm未満であり、
約95%超の結晶性ホウ素粒子が直径約3μm未満であり、
本質的に全ての結晶性ホウ素粒子が直径約15μm未満である、請求項1記載のホウ素粉末 - ホウ素粉末の化学組成が、
約100ppmの最大Br含量、
約20ppmの最大Co含量、
約200ppmの最大Cu含量、
一緒に測定したとき約4000ppmの最大Fe及びSi含量、
約20ppmの最大Mn含量、
約200ppmの最大Ni含量、
約40ppmの最大Ta含量、
約100ppmの最大Zn含量、
約1.5重量%の最大C含量率、
約1.0重量%の最大H2O含量、
約2.0重量%の最大O2含量、
(各々)約50ppmの最大含量を有する他の成分、
約98重量%の最小B含量
を有する、請求項1記載のホウ素粉末。 - 全ホウ素含有率が最小約97重量%であり、全ホウ素含有率に対する10B同位体の量が最小約98重量%である、請求項1記載のホウ素粉末。
- ホウ素粉末に混入した可溶性残渣の量が7.00×10-4g可溶性残渣/gホウ素未満であり、全ホウ素含有率が最小約97重量%であり、全ホウ素含有率に対する10B同位体の量が最小約98重量%である、ホウ素粉末。
- ホウ素粉末がホウ素供給原料をジェットミル粉砕することによって作られた結晶性ホウ素粒子を含み、
約75%超の結晶性ホウ素粒子が直径約1μm未満であり、
約95%超の結晶性ホウ素粒子が直径約3μm未満であり、
本質的に全ての結晶性ホウ素粒子が直径約15μm未満である、請求項5記載のホウ素粉末。 - ホウ素粉末の化学組成が、
約100ppmの最大Br含量、
約20ppmの最大Co含量、
約200ppmの最大Cu含量、
一緒に測定したとき約4000ppmの最大Fe及びSi含量、
約20ppmの最大Mn含量、
約200ppmの最大Ni含量、
約40ppmの最大Ta含量、
約100ppmの最大Zn含量、
約1.5重量%の最大C含量、
約1.0重量%の最大H2O含量、
約2.0重量%の最大O2含量、
(各々)約50ppmの最大含量を有する他の成分、
約98重量%の最小B含量
を含む、請求項5記載のホウ素粉末。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/276,376 | 2011-10-19 | ||
US13/276,376 US20130101488A1 (en) | 2011-10-19 | 2011-10-19 | Optimized boron powder for neutron detection applications |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013087055A true JP2013087055A (ja) | 2013-05-13 |
JP6067317B2 JP6067317B2 (ja) | 2017-01-25 |
Family
ID=48048972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012228502A Active JP6067317B2 (ja) | 2011-10-19 | 2012-10-16 | 中性子検出用途に最適化されたホウ素粉末 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130101488A1 (ja) |
JP (1) | JP6067317B2 (ja) |
CN (1) | CN103101921B (ja) |
FR (1) | FR2981644B1 (ja) |
GE (1) | GEP20146083B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130189633A1 (en) * | 2012-01-19 | 2013-07-25 | General Electric Company | Method for removing organic contaminants from boron containing powders by high temperature processing |
JP2013152784A (ja) * | 2012-01-24 | 2013-08-08 | Hitachi Ltd | MgB2超電導線材の前駆体及びその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02164711A (ja) * | 1988-10-11 | 1990-06-25 | Ethyl Corp | 高純度ボロンの製造方法 |
JPH10130016A (ja) * | 1996-10-25 | 1998-05-19 | Kojundo Chem Lab Co Ltd | 半導体用ドーパント材ホウ素及びその製造方法 |
JP2008545521A (ja) * | 2005-05-17 | 2008-12-18 | マックス−プランク−ゲゼルシャフト・ツア・フェルデルング・デア・ヴィッセンシャフテン・エー・ファオ | 水素ベースのプラズマを用いた処理による材料の清浄化 |
US20110176983A1 (en) * | 2008-09-05 | 2011-07-21 | H.C. Starck Gmbh | Method for purifying elemental boron |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2132266T3 (es) * | 1993-02-17 | 1999-08-16 | Hoechst Ag | Procedimiento de preparacion de un superconductor de alta tc como material precursor para el metodo oxide power in tube (opit). |
DE10352039B4 (de) * | 2002-11-12 | 2006-03-30 | Kronos International, Inc. | Spiralstrahlmühle |
US7789331B2 (en) * | 2006-09-06 | 2010-09-07 | Integrated Photovoltaics, Inc. | Jet mill producing fine silicon powder |
US8287715B2 (en) * | 2009-05-19 | 2012-10-16 | Colorado School Of Mines | Synthesis of boron using molten salt electrolysis |
US8445859B2 (en) * | 2009-06-15 | 2013-05-21 | Los Alamos National Security, Llc | Neutron detectors comprising boron powder |
US8565364B2 (en) * | 2009-11-16 | 2013-10-22 | General Electric Company | Water based dispersions of boron or boron compounds for use in coating boron lined neutron detectors |
US20110268235A1 (en) * | 2010-04-29 | 2011-11-03 | Michael Gurin | Boron-10 enhanced thermal energy |
-
2011
- 2011-10-19 US US13/276,376 patent/US20130101488A1/en not_active Abandoned
-
2012
- 2012-10-09 FR FR1259592A patent/FR2981644B1/fr active Active
- 2012-10-15 GE GEAP201212871A patent/GEP20146083B/en unknown
- 2012-10-16 JP JP2012228502A patent/JP6067317B2/ja active Active
- 2012-10-16 CN CN201210391384.5A patent/CN103101921B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02164711A (ja) * | 1988-10-11 | 1990-06-25 | Ethyl Corp | 高純度ボロンの製造方法 |
JPH10130016A (ja) * | 1996-10-25 | 1998-05-19 | Kojundo Chem Lab Co Ltd | 半導体用ドーパント材ホウ素及びその製造方法 |
JP2008545521A (ja) * | 2005-05-17 | 2008-12-18 | マックス−プランク−ゲゼルシャフト・ツア・フェルデルング・デア・ヴィッセンシャフテン・エー・ファオ | 水素ベースのプラズマを用いた処理による材料の清浄化 |
US20110176983A1 (en) * | 2008-09-05 | 2011-07-21 | H.C. Starck Gmbh | Method for purifying elemental boron |
Also Published As
Publication number | Publication date |
---|---|
CN103101921A (zh) | 2013-05-15 |
FR2981644A1 (fr) | 2013-04-26 |
CN103101921B (zh) | 2016-12-21 |
JP6067317B2 (ja) | 2017-01-25 |
US20130101488A1 (en) | 2013-04-25 |
FR2981644B1 (fr) | 2018-01-05 |
GEP20146083B (en) | 2014-04-25 |
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