JP2013065831A5 - - Google Patents
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- Publication number
- JP2013065831A5 JP2013065831A5 JP2012178923A JP2012178923A JP2013065831A5 JP 2013065831 A5 JP2013065831 A5 JP 2013065831A5 JP 2012178923 A JP2012178923 A JP 2012178923A JP 2012178923 A JP2012178923 A JP 2012178923A JP 2013065831 A5 JP2013065831 A5 JP 2013065831A5
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- dielectric film
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012178923A JP5956866B2 (ja) | 2011-09-01 | 2012-08-10 | 固体撮像装置 |
| CN201280041304.1A CN103765584B (zh) | 2011-09-01 | 2012-08-21 | 固态图像传感器 |
| PCT/JP2012/071527 WO2013031708A1 (en) | 2011-09-01 | 2012-08-21 | Solid-state image sensor |
| US14/113,435 US20140035086A1 (en) | 2011-09-01 | 2012-08-21 | Solid-state image sensor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011191074 | 2011-09-01 | ||
| JP2011191074 | 2011-09-01 | ||
| JP2012178923A JP5956866B2 (ja) | 2011-09-01 | 2012-08-10 | 固体撮像装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016118315A Division JP6587581B2 (ja) | 2011-09-01 | 2016-06-14 | 固体撮像装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013065831A JP2013065831A (ja) | 2013-04-11 |
| JP2013065831A5 true JP2013065831A5 (enExample) | 2015-08-13 |
| JP5956866B2 JP5956866B2 (ja) | 2016-07-27 |
Family
ID=47756198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012178923A Expired - Fee Related JP5956866B2 (ja) | 2011-09-01 | 2012-08-10 | 固体撮像装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20140035086A1 (enExample) |
| JP (1) | JP5956866B2 (enExample) |
| CN (1) | CN103765584B (enExample) |
| WO (1) | WO2013031708A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5893302B2 (ja) | 2011-09-01 | 2016-03-23 | キヤノン株式会社 | 固体撮像装置 |
| US9093345B2 (en) | 2012-10-26 | 2015-07-28 | Canon Kabushiki Kaisha | Solid-state imaging apparatus and imaging system |
| JP6209890B2 (ja) * | 2013-07-29 | 2017-10-11 | ソニー株式会社 | 裏面照射型イメージセンサ、撮像装置、および電子機器 |
| KR102380829B1 (ko) * | 2014-04-23 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
| JP2016058538A (ja) | 2014-09-09 | 2016-04-21 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP6518071B2 (ja) | 2015-01-26 | 2019-05-22 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP2017069553A (ja) | 2015-09-30 | 2017-04-06 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
| JP6600246B2 (ja) | 2015-12-17 | 2019-10-30 | キヤノン株式会社 | 撮像装置及びカメラ |
| JP6738200B2 (ja) | 2016-05-26 | 2020-08-12 | キヤノン株式会社 | 撮像装置 |
| US10319765B2 (en) | 2016-07-01 | 2019-06-11 | Canon Kabushiki Kaisha | Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter |
| CN109791267A (zh) * | 2016-09-28 | 2019-05-21 | 夏普株式会社 | 光学设备及相机模块 |
| WO2018079296A1 (ja) * | 2016-10-27 | 2018-05-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
| JP6650898B2 (ja) * | 2017-02-28 | 2020-02-19 | キヤノン株式会社 | 光電変換装置、電子機器および輸送機器 |
| EP3605609A1 (en) * | 2017-03-28 | 2020-02-05 | Nikon Corporation | Imaging element and imaging device |
| JP2019041352A (ja) | 2017-08-29 | 2019-03-14 | キヤノン株式会社 | 撮像装置及び撮像システム |
| CN107680980A (zh) * | 2017-09-29 | 2018-02-09 | 德淮半导体有限公司 | 图像传感器 |
| CN109755262A (zh) * | 2017-11-01 | 2019-05-14 | 中芯长电半导体(江阴)有限公司 | 一种封装结构及封装方法 |
| CN107833900A (zh) * | 2017-11-07 | 2018-03-23 | 德淮半导体有限公司 | 背照式互补金属氧化物半导体图像传感器及其制造方法 |
| US11557619B2 (en) * | 2017-12-26 | 2023-01-17 | Sony Semiconductor Solutions Corporation | Image sensor and imaging device |
| CN108258000A (zh) * | 2018-01-24 | 2018-07-06 | 德淮半导体有限公司 | 一种图像传感器及其形成方法 |
| JP6693537B2 (ja) * | 2018-04-20 | 2020-05-13 | ソニー株式会社 | 撮像素子および撮像装置 |
| TWI734294B (zh) * | 2019-12-11 | 2021-07-21 | 香港商京鷹科技股份有限公司 | 影像感測器 |
| JPWO2021176839A1 (enExample) * | 2020-03-06 | 2021-09-10 | ||
| TWI834406B (zh) * | 2022-12-01 | 2024-03-01 | 友達光電股份有限公司 | 元件基板及其製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5416344A (en) * | 1992-07-29 | 1995-05-16 | Nikon Corporation | Solid state imaging device and method for producing the same |
| US7215361B2 (en) * | 2003-09-17 | 2007-05-08 | Micron Technology, Inc. | Method for automated testing of the modulation transfer function in image sensors |
| JP4826111B2 (ja) * | 2005-03-17 | 2011-11-30 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
| US20070001100A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light reflection for backside illuminated sensor |
| US7829908B2 (en) * | 2005-11-11 | 2010-11-09 | Nikon Corporation | Solid-state image sensors and display devices having anti-reflection film |
| JP2008010773A (ja) * | 2006-06-30 | 2008-01-17 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
| US20080258188A1 (en) * | 2007-04-23 | 2008-10-23 | United Microelectronics Corp. | Metal oxide semiconductor device and method of fabricating the same |
| US7659595B2 (en) * | 2007-07-16 | 2010-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded bonding pad for backside illuminated image sensor |
| TWI413243B (zh) * | 2007-12-26 | 2013-10-21 | Unisantis Elect Singapore Pte | 固體攝像元件、固體攝像裝置及其製造方法 |
| KR101545638B1 (ko) * | 2008-12-17 | 2015-08-19 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법 |
| US8299554B2 (en) * | 2009-08-31 | 2012-10-30 | International Business Machines Corporation | Image sensor, method and design structure including non-planar reflector |
| JP5538811B2 (ja) * | 2009-10-21 | 2014-07-02 | キヤノン株式会社 | 固体撮像素子 |
| KR101738532B1 (ko) * | 2010-05-25 | 2017-05-22 | 삼성전자 주식회사 | 상부 고농도 p 영역을 포함하는 후면 조사형 이미지 센서 및 그 제조 방법 |
| JP2012018951A (ja) * | 2010-07-06 | 2012-01-26 | Sony Corp | 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置 |
| JP2012064709A (ja) * | 2010-09-15 | 2012-03-29 | Sony Corp | 固体撮像装置及び電子機器 |
| JP2011040774A (ja) * | 2010-10-06 | 2011-02-24 | Sony Corp | 固体撮像素子、カメラモジュール及び電子機器モジュール |
-
2012
- 2012-08-10 JP JP2012178923A patent/JP5956866B2/ja not_active Expired - Fee Related
- 2012-08-21 US US14/113,435 patent/US20140035086A1/en not_active Abandoned
- 2012-08-21 CN CN201280041304.1A patent/CN103765584B/zh not_active Expired - Fee Related
- 2012-08-21 WO PCT/JP2012/071527 patent/WO2013031708A1/en not_active Ceased
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