JP2013057660A5 - - Google Patents

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Publication number
JP2013057660A5
JP2013057660A5 JP2012161877A JP2012161877A JP2013057660A5 JP 2013057660 A5 JP2013057660 A5 JP 2013057660A5 JP 2012161877 A JP2012161877 A JP 2012161877A JP 2012161877 A JP2012161877 A JP 2012161877A JP 2013057660 A5 JP2013057660 A5 JP 2013057660A5
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JP
Japan
Prior art keywords
signal
substrate
substrate support
transmittance
windows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012161877A
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English (en)
Japanese (ja)
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JP2013057660A (ja
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Publication of JP2013057660A publication Critical patent/JP2013057660A/ja
Publication of JP2013057660A5 publication Critical patent/JP2013057660A5/ja
Withdrawn legal-status Critical Current

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JP2012161877A 2011-09-06 2012-07-20 独立光源を用いたウェハ温度測定のための方法及び装置 Withdrawn JP2013057660A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161531327P 2011-09-06 2011-09-06
US61/531,327 2011-09-06

Publications (2)

Publication Number Publication Date
JP2013057660A JP2013057660A (ja) 2013-03-28
JP2013057660A5 true JP2013057660A5 (enExample) 2015-08-27

Family

ID=47753466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012161877A Withdrawn JP2013057660A (ja) 2011-09-06 2012-07-20 独立光源を用いたウェハ温度測定のための方法及び装置

Country Status (5)

Country Link
US (1) US20130059403A1 (enExample)
JP (1) JP2013057660A (enExample)
KR (1) KR101464477B1 (enExample)
CN (1) CN102980663A (enExample)
TW (1) TW201312673A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11022877B2 (en) * 2017-03-13 2021-06-01 Applied Materials, Inc. Etch processing system having reflective endpoint detection
CN109724712B (zh) * 2017-10-31 2021-04-30 上海微电子装备（集团）股份有限公司 温度检测装置及其制造方法和激光表面退火设备
KR102421732B1 (ko) 2018-04-20 2022-07-18 삼성전자주식회사 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치
WO2020247230A1 (en) 2019-06-03 2020-12-10 Applied Materials, Inc. Method for non-contact low substrate temperature measurement
KR20220147112A (ko) * 2020-02-28 2022-11-02 매슨 테크놀로지 인크 열 처리 시스템 내의 워크피스의 투과 기반 온도 측정
US12283503B2 (en) 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
US11688616B2 (en) * 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US11359972B2 (en) * 2020-09-15 2022-06-14 Applied Materials, Inc. Temperature calibration with band gap absorption method
TWI765571B (zh) * 2021-02-09 2022-05-21 華邦電子股份有限公司 熱板冷卻系統
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
KR102703004B1 (ko) * 2022-04-01 2024-09-04 한국기계연구원 플라즈마 장치용 공정 모니터링 시스템
WO2024226128A1 (en) * 2023-04-25 2024-10-31 Applied Materials, Inc. Measuring systems, processing systems, and related apparatus and methods, including band gap materials
KR102784412B1 (ko) * 2024-08-14 2025-03-21 (주)디바이스이엔지 가열 유닛이 장착된 기판 처리 장치
CN119310065A (zh) * 2024-11-01 2025-01-14 山东大学 基于libs的非接触式瞬态高温测量系统
CN121204628B (zh) * 2025-11-28 2026-03-17 浙江晟霖益嘉科技有限公司 一种pvd加热室的温度控制方法
CN121346983B (zh) * 2025-12-03 2026-03-20 盛吉盛半导体科技(北京)有限公司 一种基于透射与辐射的晶圆测温方法、装置、设备及介质

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100255961B1 (ko) 1994-03-11 2000-05-01 아끼구사 나오유끼 물리량 측정방법 및 장치, 반도체 장치의 제조방법과 파장측정방법 및 장치
US6891124B2 (en) * 2000-01-05 2005-05-10 Tokyo Electron Limited Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
KR100636016B1 (ko) * 2000-11-06 2006-10-18 삼성전자주식회사 반도체 제조를 위한 기판의 온도를 측정하는 방법 및 장치
US20090316749A1 (en) * 2008-06-23 2009-12-24 Matthew Fenton Davis Substrate temperature measurement by infrared transmission in an etch process

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