JP2013057660A - 独立光源を用いたウェハ温度測定のための方法及び装置 - Google Patents

独立光源を用いたウェハ温度測定のための方法及び装置 Download PDF

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Publication number
JP2013057660A
JP2013057660A JP2012161877A JP2012161877A JP2013057660A JP 2013057660 A JP2013057660 A JP 2013057660A JP 2012161877 A JP2012161877 A JP 2012161877A JP 2012161877 A JP2012161877 A JP 2012161877A JP 2013057660 A JP2013057660 A JP 2013057660A
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JP
Japan
Prior art keywords
substrate
light
signal
transmittance
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012161877A
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English (en)
Japanese (ja)
Other versions
JP2013057660A5 (enExample
Inventor
Ahmad Lee Jared
アフマド リー ジャレド
Jiping Li
リ ジッピング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2013057660A publication Critical patent/JP2013057660A/ja
Publication of JP2013057660A5 publication Critical patent/JP2013057660A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Radiation Pyrometers (AREA)
JP2012161877A 2011-09-06 2012-07-20 独立光源を用いたウェハ温度測定のための方法及び装置 Withdrawn JP2013057660A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161531327P 2011-09-06 2011-09-06
US61/531,327 2011-09-06

Publications (2)

Publication Number Publication Date
JP2013057660A true JP2013057660A (ja) 2013-03-28
JP2013057660A5 JP2013057660A5 (enExample) 2015-08-27

Family

ID=47753466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012161877A Withdrawn JP2013057660A (ja) 2011-09-06 2012-07-20 独立光源を用いたウェハ温度測定のための方法及び装置

Country Status (5)

Country Link
US (1) US20130059403A1 (enExample)
JP (1) JP2013057660A (enExample)
KR (1) KR101464477B1 (enExample)
CN (1) CN102980663A (enExample)
TW (1) TW201312673A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11022877B2 (en) 2017-03-13 2021-06-01 Applied Materials, Inc. Etch processing system having reflective endpoint detection
CN109724712B (zh) * 2017-10-31 2021-04-30 上海微电子装备（集团）股份有限公司 温度检测装置及其制造方法和激光表面退火设备
KR102421732B1 (ko) 2018-04-20 2022-07-18 삼성전자주식회사 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치
TWI849132B (zh) 2019-06-03 2024-07-21 美商應用材料股份有限公司 非接觸式的低基板溫度測量方法
US11610824B2 (en) * 2020-02-28 2023-03-21 Beijing E-Town Semiconductor Technology Co., Ltd Transmission-based temperature measurement of a workpiece in a thermal processing system
US11688616B2 (en) * 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US12283503B2 (en) 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
US11359972B2 (en) * 2020-09-15 2022-06-14 Applied Materials, Inc. Temperature calibration with band gap absorption method
TWI765571B (zh) * 2021-02-09 2022-05-21 華邦電子股份有限公司 熱板冷卻系統
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
KR102703004B1 (ko) * 2022-04-01 2024-09-04 한국기계연구원 플라즈마 장치용 공정 모니터링 시스템
US20240363448A1 (en) * 2023-04-25 2024-10-31 Applied Materials, Inc. Measuring systems, processing systems, and related apparatus and methods, including band gap materials
KR102784412B1 (ko) * 2024-08-14 2025-03-21 (주)디바이스이엔지 가열 유닛이 장착된 기판 처리 장치
CN119310065A (zh) * 2024-11-01 2025-01-14 山东大学 基于libs的非接触式瞬态高温测量系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773316A (en) * 1994-03-11 1998-06-30 Fujitsu Limited Method and device for measuring physical quantity, method for fabricating semiconductor device, and method and device for measuring wavelength
WO2001050109A2 (en) * 2000-01-05 2001-07-12 Tokyo Electron Limited Wafer band-edge measurement using spectroscopy and a process of uniform wafer temperature control
KR100636016B1 (ko) * 2000-11-06 2006-10-18 삼성전자주식회사 반도체 제조를 위한 기판의 온도를 측정하는 방법 및 장치
US20090316749A1 (en) * 2008-06-23 2009-12-24 Matthew Fenton Davis Substrate temperature measurement by infrared transmission in an etch process

Also Published As

Publication number Publication date
TW201312673A (zh) 2013-03-16
US20130059403A1 (en) 2013-03-07
KR101464477B1 (ko) 2014-11-24
CN102980663A (zh) 2013-03-20
KR20130027076A (ko) 2013-03-14

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