TW201312673A - 利用獨立光源以測量晶圓溫度之方法與設備 - Google Patents
利用獨立光源以測量晶圓溫度之方法與設備 Download PDFInfo
- Publication number
- TW201312673A TW201312673A TW101124043A TW101124043A TW201312673A TW 201312673 A TW201312673 A TW 201312673A TW 101124043 A TW101124043 A TW 101124043A TW 101124043 A TW101124043 A TW 101124043A TW 201312673 A TW201312673 A TW 201312673A
- Authority
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- Taiwan
- Prior art keywords
- substrate
- signal
- light
- wavelength
- temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 128
- 238000009529 body temperature measurement Methods 0.000 title description 13
- 239000000758 substrate Substances 0.000 claims abstract description 252
- 230000008569 process Effects 0.000 claims abstract description 87
- 238000002834 transmittance Methods 0.000 claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 27
- 238000012545 processing Methods 0.000 claims description 54
- 230000005540 biological transmission Effects 0.000 claims description 28
- 230000008859 change Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 32
- 238000012546 transfer Methods 0.000 description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
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- 239000010408 film Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000003032 molecular docking Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000237074 Centris Species 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000004616 Pyrometry Methods 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000010259 detection of temperature stimulus Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161531327P | 2011-09-06 | 2011-09-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201312673A true TW201312673A (zh) | 2013-03-16 |
Family
ID=47753466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101124043A TW201312673A (zh) | 2011-09-06 | 2012-07-04 | 利用獨立光源以測量晶圓溫度之方法與設備 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20130059403A1 (enExample) |
| JP (1) | JP2013057660A (enExample) |
| KR (1) | KR101464477B1 (enExample) |
| CN (1) | CN102980663A (enExample) |
| TW (1) | TW201312673A (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11022877B2 (en) | 2017-03-13 | 2021-06-01 | Applied Materials, Inc. | Etch processing system having reflective endpoint detection |
| CN109724712B (zh) * | 2017-10-31 | 2021-04-30 | 上海微电子装备（集团）股份有限公司 | 温度检测装置及其制造方法和激光表面退火设备 |
| KR102421732B1 (ko) | 2018-04-20 | 2022-07-18 | 삼성전자주식회사 | 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치 |
| TWI849132B (zh) | 2019-06-03 | 2024-07-21 | 美商應用材料股份有限公司 | 非接觸式的低基板溫度測量方法 |
| US11610824B2 (en) * | 2020-02-28 | 2023-03-21 | Beijing E-Town Semiconductor Technology Co., Ltd | Transmission-based temperature measurement of a workpiece in a thermal processing system |
| US11688616B2 (en) * | 2020-07-22 | 2023-06-27 | Applied Materials, Inc. | Integrated substrate measurement system to improve manufacturing process performance |
| US12283503B2 (en) | 2020-07-22 | 2025-04-22 | Applied Materials, Inc. | Substrate measurement subsystem |
| US11359972B2 (en) * | 2020-09-15 | 2022-06-14 | Applied Materials, Inc. | Temperature calibration with band gap absorption method |
| TWI765571B (zh) * | 2021-02-09 | 2022-05-21 | 華邦電子股份有限公司 | 熱板冷卻系統 |
| US12235624B2 (en) | 2021-12-21 | 2025-02-25 | Applied Materials, Inc. | Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing |
| US12216455B2 (en) | 2022-01-25 | 2025-02-04 | Applied Materials, Inc. | Chamber component condition estimation using substrate measurements |
| US12339645B2 (en) | 2022-01-25 | 2025-06-24 | Applied Materials, Inc. | Estimation of chamber component conditions using substrate measurements |
| US12148647B2 (en) | 2022-01-25 | 2024-11-19 | Applied Materials, Inc. | Integrated substrate measurement system |
| KR102703004B1 (ko) * | 2022-04-01 | 2024-09-04 | 한국기계연구원 | 플라즈마 장치용 공정 모니터링 시스템 |
| US20240363448A1 (en) * | 2023-04-25 | 2024-10-31 | Applied Materials, Inc. | Measuring systems, processing systems, and related apparatus and methods, including band gap materials |
| KR102784412B1 (ko) * | 2024-08-14 | 2025-03-21 | (주)디바이스이엔지 | 가열 유닛이 장착된 기판 처리 장치 |
| CN119310065A (zh) * | 2024-11-01 | 2025-01-14 | 山东大学 | 基于libs的非接触式瞬态高温测量系统 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5773316A (en) * | 1994-03-11 | 1998-06-30 | Fujitsu Limited | Method and device for measuring physical quantity, method for fabricating semiconductor device, and method and device for measuring wavelength |
| WO2001050109A2 (en) * | 2000-01-05 | 2001-07-12 | Tokyo Electron Limited | Wafer band-edge measurement using spectroscopy and a process of uniform wafer temperature control |
| KR100636016B1 (ko) * | 2000-11-06 | 2006-10-18 | 삼성전자주식회사 | 반도체 제조를 위한 기판의 온도를 측정하는 방법 및 장치 |
| US20090316749A1 (en) * | 2008-06-23 | 2009-12-24 | Matthew Fenton Davis | Substrate temperature measurement by infrared transmission in an etch process |
-
2012
- 2012-06-30 US US13/539,340 patent/US20130059403A1/en not_active Abandoned
- 2012-07-04 TW TW101124043A patent/TW201312673A/zh unknown
- 2012-07-18 KR KR1020120078164A patent/KR101464477B1/ko not_active Expired - Fee Related
- 2012-07-20 CN CN2012102599761A patent/CN102980663A/zh active Pending
- 2012-07-20 JP JP2012161877A patent/JP2013057660A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20130059403A1 (en) | 2013-03-07 |
| KR101464477B1 (ko) | 2014-11-24 |
| CN102980663A (zh) | 2013-03-20 |
| KR20130027076A (ko) | 2013-03-14 |
| JP2013057660A (ja) | 2013-03-28 |
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