JP2013051338A - 半導体受光素子 - Google Patents

半導体受光素子 Download PDF

Info

Publication number
JP2013051338A
JP2013051338A JP2011189212A JP2011189212A JP2013051338A JP 2013051338 A JP2013051338 A JP 2013051338A JP 2011189212 A JP2011189212 A JP 2011189212A JP 2011189212 A JP2011189212 A JP 2011189212A JP 2013051338 A JP2013051338 A JP 2013051338A
Authority
JP
Japan
Prior art keywords
layer
light absorption
impurity diffusion
diffusion region
absorption layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011189212A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013051338A5 (enExample
Inventor
Yasuo Nakajima
康雄 中島
Mototake Kikuchi
真人武 菊地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011189212A priority Critical patent/JP2013051338A/ja
Publication of JP2013051338A publication Critical patent/JP2013051338A/ja
Publication of JP2013051338A5 publication Critical patent/JP2013051338A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Light Receiving Elements (AREA)
JP2011189212A 2011-08-31 2011-08-31 半導体受光素子 Pending JP2013051338A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011189212A JP2013051338A (ja) 2011-08-31 2011-08-31 半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011189212A JP2013051338A (ja) 2011-08-31 2011-08-31 半導体受光素子

Publications (2)

Publication Number Publication Date
JP2013051338A true JP2013051338A (ja) 2013-03-14
JP2013051338A5 JP2013051338A5 (enExample) 2014-10-09

Family

ID=48013168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011189212A Pending JP2013051338A (ja) 2011-08-31 2011-08-31 半導体受光素子

Country Status (1)

Country Link
JP (1) JP2013051338A (enExample)

Similar Documents

Publication Publication Date Title
US7928472B2 (en) Optical semiconductor device with a distributed Bragg reflector layer
JP5303962B2 (ja) 半導体受光素子
JP5444994B2 (ja) 半導体受光素子
US9130083B2 (en) Semiconductor light receiving device and light receiving apparatus
JP2014057110A (ja) アバランシェ・フォトダイオード
JP5433948B2 (ja) 半導体受光素子
JP5983076B2 (ja) フォトダイオードアレイ
JP2016522578A (ja) 高速光検出器
Baek et al. Room temperature quantum key distribution characteristics of low-noise InGaAs/InP single-photon avalanche diode
JP2006253548A (ja) 半導体受光素子
JP4370203B2 (ja) 半導体素子
JP5050925B2 (ja) 半導体受光素子
JP2014179427A (ja) 赤外線発光素子及びガスセンサ
JP2011258809A (ja) 半導体受光素子
WO2013146406A1 (ja) 導波路結合ｍｓｍ型フォトダイオード
Wu et al. High-Speed In_0. 52Al_0. 48As Based Avalanche Photodiode With Top-Illuminated Design for 100 Gb/s ER-4 System
JPH04111478A (ja) 受光素子
JP4985298B2 (ja) アバランシェフォトダイオード
JP5228922B2 (ja) 半導体受光素子
JP2017228569A (ja) アバランシェフォトダイオードおよびその製造方法
RU2488916C1 (ru) Полупроводниковый приемник инфракрасного излучения
JP2013051338A (ja) 半導体受光素子
JP2010045417A (ja) 半導体受光素子
JP2002100796A (ja) 受光素子アレイ
KR102377319B1 (ko) 광 검출 소자

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140610

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140821

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150306

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150317

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150714