JP2013045542A - Organic electroluminescent device, organic electroluminescent device manufacturing method, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic electroluminescent device capable of restraining exfoliation of a color filter layer.SOLUTION: An organic electroluminescent device comprises: a substrate 10; a color filter layer 20 formed on the substrate 10; a first electrode 13 formed between the substrate 10 and the color filter layer 20; a second electrode 14 opposed to the first electrode 13; an organic light-emitting layer 15 formed between the first electrode 13 and the second electrode 14; and a sealing layer 19 formed between the second electrode 14 and the color filter layer 20. Recess and projection faces 19S1, 19S2, 19S3 having recesses and projections are formed in a region overlaid on the first electrode 13 when seen from a direction orthogonal to the substrate 10 on a side of the sealing layer 19 opposite to the second electrode 14. The color filter layer 20 is formed on the recess and projection faces 19S1, 19S2, 19S3 of the sealing layer 19.

Description

  The present invention relates to an organic electroluminescence device, a method for manufacturing an organic electroluminescence device, and an electronic apparatus.

  In recent years, with the diversification of information equipment and the like, there is an increasing need for flat display devices that consume less power and are lighter. As one of such flat display devices, an organic electroluminescence device including an organic electroluminescence element is known. The organic electroluminescence device has a configuration in which an organic light emitting layer is provided between a pixel electrode and a counter electrode.

  On the other hand, there is a technique for forming a color filter layer on an element substrate on which an organic electroluminescent element is formed in order to reduce the thickness of the organic electroluminescent device. For example, in the organic electroluminescent device of Patent Document 1, a transparent protective layer having a flat upper surface is formed on the side of the element substrate on which the organic electroluminescent element is formed, and a color filter layer is formed on the transparent protective layer. Is formed.

JP 2001-126864 A

As the definition of organic electroluminescence devices increases, the pixel size decreases. The color filter layer is required to have a predetermined adhesion to the transparent protective layer.
However, when the upper surface of the transparent protective layer is flat, the adhesion between the transparent protective layer and the color filter layer is reduced, and the color filter layer may be peeled off from the transparent protective layer.

  This invention is made | formed in view of such a situation, Comprising: It aims at providing the manufacturing method of the organic electroluminescent apparatus which can suppress peeling of a color filter layer, and an organic electroluminescent apparatus. Another object is to provide an electronic device with excellent reliability.

  In order to solve the above problems, an organic electroluminescence device of the present invention includes a substrate, a first electrode formed on the substrate, and an organic light emitting layer formed on the opposite side of the first electrode from the substrate. A second electrode formed to face the first electrode across the organic light emitting layer, a sealing layer formed on the opposite side of the second electrode from the organic light emitting layer, and the sealing A color filter layer formed on a side opposite to the second electrode of the layer, and a surface of the sealing layer on the side opposite to the second electrode when viewed from a direction perpendicular to the substrate Concavities and convexities are formed in a region overlapping with the first electrode, and the color filter layer is formed on the concavities and convexities of the sealing layer.

  According to this configuration, since the color filter layer is formed on the unevenness of the sealing layer, a part of the color filter layer is difficult to come out in a state where the wedge enters the unevenness of the sealing layer and strikes a wedge. A so-called anchor effect (throwing effect) occurs. Therefore, an organic electroluminescence device capable of suppressing peeling of the color filter layer is obtained.

  The organic electroluminescence device may include a first pixel and a second pixel, the first pixel and the second pixel include the first electrode, and the color filter layer includes the first pixel. A first colored layer that is provided in a first area corresponding to one pixel and transmits a first color; and a second colored area that is provided in a second area corresponding to the second pixel and transmits a second color. And the unevenness of the sealing layer includes a first unevenness provided in the first region and a second unevenness provided in the second region, The first unevenness and the second unevenness may be different from each other.

  According to this configuration, the adhesion of the colored layer is improved as the depth of the unevenness is increased. Therefore, the adhesion of the color filter layer is appropriately adjusted by varying the size of the unevenness according to the adhesion of the colored layer. can do.

  The organic electroluminescence device may include a first recess formed in the first region and a second recess formed in the second region, wherein the first recess and the second recess The concave and convex portions are formed with the concave and convex portions, and the color filter layer may be formed in the first concave portion and the second concave portion.

  According to this configuration, a part of the color filter layer enters the recess and is difficult to come off. Therefore, peeling of the color filter layer can be suppressed.

  In the organic electroluminescence device, the depth of the first recess and the depth of the second recess may be different from each other.

  According to this structure, the anchor effect by the recessed part from which a depth mutually differs is provided to a color filter layer. Therefore, peeling of the color filter layer can be suppressed.

  In the organic electroluminescence device, the thickness of the first colored layer and the thickness of the second colored layer may be different from each other.

  According to this configuration, by changing the thickness of the color filter layer for each color layer, the color layer for each color can have a thickness suitable for the color reproducibility of each color. Therefore, an organic electroluminescence device having an optimum color balance can be obtained.

  Moreover, the height of the upper surface of the first colored layer may be equal to the height of the upper surface of the second colored layer.

  According to this configuration, the second colored layer is formed at the same height as the top surface of the first colored layer. Therefore, it becomes easy to form the second colored layer.

  The surface of the color filter layer opposite to the sealing layer may be flat.

  According to this configuration, the upper surface of the color filter layer is formed flat. Therefore, it becomes easy to form a film on the color filter layer.

  In the organic electroluminescence device, the sealing layer may be made of an inorganic material, and the color filter layer may be made of an organic material.

When the color filter layer is formed on the flat surface of the transparent protective layer, the sealing layer is made of an inorganic material, and the color filter layer is made of an organic material (the sealing layer forming material and the color filter layer forming material are In the case of different), the adhesion between the sealing layer and the color filter layer is reduced as compared with the case where the sealing layer forming material and the color filter layer forming material are the same.
In contrast, according to the configuration of the present invention, the color filter layer is formed on the unevenness of the sealing layer, and a part of the color filter layer made of an organic material enters the unevenness of the sealing layer made of an inorganic material. . Therefore, an anchor effect (throwing effect) is generated, and it is easy to suppress peeling of the color filter layer.

  The manufacturing method of the organic electroluminescent device of the present invention includes a step of forming a first electrode on a substrate, a step of forming an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer. A step of forming a sealing layer on the second electrode, and a step of forming a color filter layer on the sealing layer, and the step of forming the color filter layer includes the step of sealing Forming a concavo-convex portion by applying dry etching to a region overlapping the first electrode when viewed from a direction perpendicular to the substrate on the layer; and forming the color filter layer on the concavo-convex portion of the sealing layer. And a step of forming.

  According to this manufacturing method, before the step of forming the color filter layer, the unevenness is formed by performing dry etching on the formation region of the color filter layer in the sealing layer. Therefore, the color filter layer is formed on the unevenness of the sealing layer, and a part of the color filter layer enters the unevenness of the sealing layer, making it difficult to come out in a state where a wedge is driven in (so-called anchor effect) Occurs. Therefore, an organic electroluminescence device that can suppress peeling of the color filter layer can be manufactured. Further, by using dry etching, irregularities can be formed with an appropriate scale.

  Further, in the method for manufacturing the organic electroluminescence device, the first pixel and the second pixel include a first pixel, the first pixel and the second pixel include the first electrode, and the color filter layer includes: And the step of forming the unevenness includes a first colored layer that transmits a first color and a second colored layer that transmits a second color. Applying a first dry etching to the first region corresponding to the first region to form first irregularities, and forming a second region corresponding to the second pixel on the sealing layer with the second region Forming a second unevenness having a size different from that of the first unevenness, and forming the color filter layer in the first region of the sealing layer. Forming the first colored layer in the second region of the sealing layer; Forming a serial second colored layer may contain.

  According to this manufacturing method, the adhesion of the colored layer is improved as the depth of the unevenness is increased. Therefore, the adhesion of the color filter layer is appropriately adjusted by varying the size of the unevenness according to the adhesion of the colored layer. Can be adjusted.

  Further, in the method of manufacturing the organic electroluminescence device, the step of forming the unevenness includes a step of forming a recess by performing dry etching on the sealing layer, and the unevenness in the recess of the sealing layer. And a forming step.

  According to this manufacturing method, a part of the color filter layer enters the recess and is difficult to come off. Therefore, peeling of the color filter layer can be suppressed.

  Moreover, in the method for manufacturing the organic electroluminescence device, the step of forming the recess includes the step of forming a first recess in the first region on the sealing layer, and the step on the sealing layer. Forming a second recess having a depth different from that of the first recess in the second region, and forming the color filter layer includes forming the first recess in the first recess. A step of forming a colored layer and a step of forming the second colored layer in the second recess may be included.

  According to this manufacturing method, the color filter layer is given an anchor effect due to the concave portions having different depths. Therefore, peeling of the color filter layer can be suppressed.

  Further, in the method for manufacturing the organic electroluminescence device, the thickness of the first colored layer and the thickness of the second colored layer are different from each other, and the step of forming the recess is the step of forming the color filter layer The height of the top surface of the first colored layer formed in the first recess is equal to the height of the top surface of the second colored layer formed in the second recess. The depth of the recess and the depth of the second recess may be adjusted.

  According to this manufacturing method, the second colored layer is formed at the same height as the height of the upper surface of the first colored layer. Therefore, it becomes easy to form the second colored layer.

  An electronic apparatus according to the present invention includes the organic electroluminescence device.

  According to the electronic device of the present invention, since the organic electroluminescence device of the present invention is provided, an electronic device having excellent reliability can be provided.

1 is a cross-sectional view showing an organic electroluminescence device according to a first embodiment of the present invention. It is a principal part sectional drawing of an organic electroluminescent apparatus equally. It is explanatory drawing about the manufacturing process of an organic electroluminescent apparatus equally. It is explanatory drawing following FIG. It is explanatory drawing following FIG. It is explanatory drawing following FIG. It is explanatory drawing following FIG. It is explanatory drawing following FIG. It is principal part sectional drawing which shows the organic electroluminescent apparatus which concerns on 2nd Embodiment of this invention. It is a figure which shows an example of an electronic device.

  Embodiments of the present invention will be described below with reference to the drawings. This embodiment shows one aspect of the present invention, and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. Moreover, in the following drawings, in order to make each structure easy to understand, the scale, number, etc. in the actual structure are different.

FIG. 1 is a cross-sectional view showing an organic electroluminescence device 1 according to a first embodiment of the present invention.
As shown in FIG. 1, an organic electroluminescence device 1 according to this embodiment includes various wirings (not shown) formed on a substrate body, thin film transistors (hereinafter referred to as TFTs) as switching elements, and various circuits. The TFT array substrate 11 is provided for emitting light from the light emitting layer (organic light emitting layer). The organic electroluminescence device 1 according to the present embodiment is an active matrix type using TFTs as switching elements. However, the present invention is not limited to this, and the present invention can be applied to a configuration employing a simple matrix type. it can.

  The organic electroluminescence device 1 in this embodiment is a so-called “top emission structure” organic electroluminescence device. In the top emission structure, since light is extracted from the counter electrode 14 side instead of the element substrate 10 side, there is an effect that a wide light emitting area can be secured without being affected by the size of various circuits arranged on the element substrate 10. Therefore, luminance can be ensured while suppressing voltage and current, and the lifetime of the light emitting element (organic electroluminescence element) 12 can be maintained long.

  The organic electroluminescence device 1 includes an element substrate 10, an electrode protective layer 17 formed so as to cover the entire exposed portion of the light emitting element 12 on the element substrate 10, and an organic buffer layer 18 formed on the electrode protective layer 17. A gas barrier layer 19 formed on the electrode protection layer 17 so as to cover the entire exposed portion of the organic buffer layer 18, and a color filter layer 20 formed on the gas barrier layer 19.

  Instead of the electrode protective layer 17, the organic buffer layer 18 and the gas barrier layer 19, the sealing layer may be formed by an inorganic film formed by applying an inorganic material such as polysiloxane or polysilazane. Further, in the organic electroluminescence device 1, the peripheral sealing layer disposed along the outer peripheral portion of the element substrate 10, the filling layer formed inside the peripheral sealing layer, and the element substrate 10 are attached via the peripheral sealing layer. And a combined protective substrate.

  The element substrate 10 includes a TFT array substrate 11, a plurality of light emitting elements 12 having an organic light emitting layer 15 sandwiched between a pixel electrode 13 and a counter electrode 14, and a pixel partition wall 16 that divides the light emitting elements 12 (pixel electrodes 13). ,have. Each of the plurality of light emitting elements 12 constitutes a pixel of the organic electroluminescence device 1.

  In the present embodiment, the pixel electrode 13 is formed of a material having a high hole injection effect having a work function of 5 eV or more. As such a material, for example, a metal oxide such as ITO (Indium Tin Oxide) is used. In the present embodiment, since the top emission method is employed, the pixel electrode 13 does not need to have translucency. Therefore, in this embodiment, a light reflective metal layer such as Al is formed below the transparent conductive layer made of ITO to form a laminated structure, and the pixel electrode 13 is formed by this laminated structure.

  In this embodiment, the organic functional layer 15 is formed including an organic light emitting layer made of a low molecular weight organic electroluminescent material. As such an organic functional layer 15, for example, a structure in which a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked from the pixel electrode side is known. A structure in which the hole transport layer and the electron transport layer are omitted, a hole injection / transport layer having both functions of the hole injection layer and the hole transport layer, or both the electron injection layer and the electron transport layer are used. A structure using an electron injecting / transporting layer having the above functions is known. In the present invention, an appropriate structure is selected and formed from such structures.

Moreover, as a material of the organic functional layer 15, a well-known thing can be used, respectively.
For example, as the material for the organic light emitting layer, a styrylamine light emitting material or the like is used as the organic light emitting material that emits white light in the present embodiment.
Furthermore, as the material for the hole injection layer, triarylamine (ATP) multimers are used, and as the material for the hole transport layer, TDP (triphenyldiamine) -based materials are used. Aluminum quinolinol (Alq3) or the like is used as the material for the transport layer.

  A counter electrode 14 is formed on the organic functional layer 15 so as to cover the organic functional layer 15. As a material for forming the counter electrode 14, since the present embodiment has a top emission structure, it needs to be a light transmissive material. A transparent conductive material is used as a material for forming the counter electrode 14. As the transparent conductive material, ITO is suitable, but other than this, for example, indium oxide / zinc oxide-based amorphous transparent conductive film (Indium Zinc Oxide: IZO) is used. be able to. In this embodiment, ITO is used as a material for forming the counter electrode 14.

  The counter electrode 14 is preferably made of a material having a large electron injection effect (a work function of 4 eV or less). For example, calcium, magnesium, sodium, lithium metal, or a metal compound thereof. Examples of the metal compound include metal fluorides such as calcium fluoride, metal oxides such as lithium oxide, and organometallic complexes such as acetylacetonato calcium. Moreover, it is preferable to reduce electrical resistance by laminating transparent metal oxide conductive layers such as ITO and tin oxide. In the present embodiment, a laminate of lithium fluoride, magnesium-silver alloy, and ITO is used by adjusting the film thickness to obtain transparency.

  In the organic electroluminescence device 1 of the present embodiment, an organic electroluminescence element is formed by the pixel electrode 13, the organic functional layer 15, and the counter electrode 14. That is, when a voltage is applied between the pixel electrode 13 and the counter electrode 14, holes are injected from the pixel electrode 13 into the hole injection layer and transported to the organic light emitting layer through the hole transport layer. In addition, electrons are injected from the counter electrode 14 into the electron injection layer and transported to the organic light emitting layer through the electron transport layer. Then, the holes and electrons transported to the organic light emitting layer are recombined, so that the organic light emitting layer emits light.

  The light emitted from the organic light emitting layer to the pixel electrode side is transmitted through the transparent conductive layer, reflected by the light reflective metal layer, and again incident on the organic light emitting layer side. Since the counter electrode 14 functions as a transflective film, light having a wavelength other than a predetermined range is reflected to the light reflective metal layer side and reciprocates between the counter electrode 14 and the light reflective metal layer. In this way, only light having a resonance wavelength corresponding to the optical distance between the counter electrode 14 and the light reflective metal layer is amplified and extracted. In other words, the space between the counter electrode 14 and the light-reflecting metal layer that functions as a resonator can emit light having a high emission luminance and a sharp spectrum. . Here, the optical distance is determined by the sum of the optical distances of the layers included between the counter electrode 14 and the light-reflecting metal layer, and the optical distance of each layer is determined by the film thickness and the refractive index. Calculated by product.

  An electrode protective layer 17 that protects the light emitting element 12 is formed on the TFT array substrate 11.

  The electrode protective layer 17 is preferably composed of a silicon compound such as silicon oxynitride in consideration of transparency, adhesion, water resistance, and gas barrier properties.

  In the present embodiment, the electrode protective layer 17 is formed as a single layer, but may be stacked as a plurality of layers. For example, the electrode protective layer 17 may be composed of a low elastic modulus lower layer and a high water resistance upper layer.

  On the electrode protection layer 17, an organic buffer layer 18 is formed so as to cover the formation region of the light emitting element 12.

The organic buffer layer 18 is disposed so as to fill the uneven portion of the electrode protection layer 17 formed in an uneven shape due to the influence of the shape of the pixel partition wall 16. The upper surface of the organic buffer layer 18 is formed substantially flat. The organic buffer layer 18 has a function of relieving stress generated by warpage or volume expansion of the TFT array substrate 11. In addition, since the upper surface of the organic buffer layer 18 is substantially flattened, a gas barrier layer 19 (to be described later) made of a hard film formed on the organic buffer layer 18 is also flattened. Therefore, there is no portion where stress is concentrated, and thereby the occurrence of cracks in the gas barrier layer 19 is suppressed. Furthermore, the unevenness is filled by covering the pixel partition wall 16, which is effective in improving the film thickness uniformity of the color filter layer 20 formed on the gas barrier layer 19.

  Since the organic buffer layer 18 is formed by a screen printing method under a vacuum under reduced pressure as a raw material main component before curing, all of the organic buffer layer 18 which is excellent in fluidity and free of a solvent or a volatile component is a raw material of a polymer skeleton. It is necessary to be an organic compound material, and an epoxy monomer / oligomer having an epoxy group and a molecular weight of 3000 or less is preferably used (monomer definition: molecular weight 1000 or less, oligomer definition: molecular weight 1000 to 3000). For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these are used alone or in combination.

  Moreover, as the curing agent that reacts with the epoxy monomer / oligomer, one that forms a cured film with excellent electrical insulation and adhesiveness, high hardness, toughness, and excellent heat resistance, excellent transparency, and curing properties. An addition polymerization type with little variation is preferable. For example, 3-methyl-1,2,3,6-tetrahydrophthalic anhydride, methyl-3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, 1,2,4,5-benzene Acid anhydride curing agents such as tetracarboxylic dianhydride and 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride are preferred. Furthermore, it becomes easy to cure at low temperature by adding an alcohol having a large molecular weight and hardly volatilizing such as 1,6-hexanediol as a reaction accelerator for promoting the reaction (ring opening) of the acid anhydride. These curings are performed by heating in the range of 60 to 100 ° C., and the cured film becomes a polymer having an ester bond. Furthermore, it becomes easy to cure at low temperature by adding a trace amount of amine compounds such as aromatic amines, alcohols and aminophenols as curing accelerators for promoting acid anhydride ring opening.

  On the organic buffer layer 18, a gas barrier layer 19 is formed in a wide range so as to cover the organic buffer layer 18 and cover the terminal portion of the electrode protective layer 17.

  The gas barrier layer 19 is for suppressing the intrusion of oxygen and moisture, whereby the deterioration of the light emitting element 12 due to the oxygen and moisture can be suppressed. In consideration of transparency, gas barrier properties, and water resistance, the gas barrier layer 19 is preferably formed of a silicon compound containing nitrogen, that is, silicon nitride, silicon oxynitride, or the like.

  Moreover, in this embodiment, since the organic electroluminescent apparatus 1 is made into the top emission structure, the gas barrier layer 19 needs to have a light transmittance. Therefore, by appropriately adjusting the material and film thickness of the gas barrier layer 19, in this embodiment, the light transmittance in the visible light region is set to 80% or more, for example.

  On the surface (surface) opposite to the organic buffer layer 18 of the gas barrier layer 19, an uneven surface 19 </ b> S having unevenness is formed in a region overlapping the pixel electrode 13 when viewed from the direction perpendicular to the substrate 11. Here, “unevenness” means fine unevenness having a nano-level size (for example, 1 to 10 nm) that does not affect the wavelength of light (not to scatter light). For example, whether or not the surface of the gas barrier layer 19 has fine irregularities can be confirmed using a transmission electron microscope (TEM) or the like.

  On the surface of the gas barrier layer 19, a recess 19 </ b> T having an uneven surface 19 </ b> S at the bottom corresponding to each pixel is formed in a region overlapping the pixel electrode 13 when viewed from the direction perpendicular to the substrate 11. The recess 19T includes a first recess 19T1, a second recess 19T2 having a depth greater than the first recess 19T1, and a third recess 19T3 having a depth greater than the second recess 19T2. Have. In the gas barrier layer 19, a first recess 19T1, a second recess 19T2, and a third recess 19T3 are formed so as to be adjacent to each other in this order.

  The thickness of the portion where the recess 19T is not formed in the gas barrier layer 19 is, for example, in the range of 400 nm to 800 nm. Here, “the thickness of the portion where the recess 19T is not formed in the gas barrier layer 19” means the length of the portion where the recess 19T is not formed in the gas barrier layer 19 in the direction orthogonal to the upper surface of the element substrate 10. (Distance between the lower surface and the upper surface of the portion where the recess 19T is not formed in the gas barrier layer 19).

  The thickness of the portion of the gas barrier layer 19 where the recess 19T is formed is, for example, about 200 nm. Here, “the thickness of the portion where the recess 19T is formed in the gas barrier layer 19” means the length of the portion where the recess 19T is formed in the gas barrier layer 19 in the direction orthogonal to the upper surface of the element substrate 10. (Distance between the lower surface of the portion where the recess 19T is formed in the gas barrier layer 19 and the bottom of the recess 19T). In addition, the bottom part of the recessed part 19T is made into the concave surface of the uneven surface 19S, as shown in FIG.2 (b).

  Even if the recess 19T is formed in the gas barrier layer 19, the function such as gas barrier properties can be maintained if the thickness of the portion of the gas barrier layer 19 where the recess 19T is formed is at least about 200 nm.

  A color filter layer 20 is formed on the uneven surface 19 </ b> S of the gas barrier layer 19. The color filter layer 20 includes, as coloring layers, a red coloring layer 20R formed corresponding to the red pixel, a green coloring layer 20G formed corresponding to the green pixel, and having a thickness larger than the red coloring layer 20R. And a blue colored layer 20B formed corresponding to the blue pixel and having a thickness larger than that of the green colored layer 20G. The red colored layer 20R, the green colored layer 20G, and the blue colored layer 20B are arranged so as to be adjacent in this order.

  The red colored layer 20 </ b> R is formed in the first recess 19 </ b> T <b> 1 of the gas barrier layer 19. The green colored layer 20G is formed in the second recess 19T2 of the gas barrier layer 19. The blue colored layer 20 </ b> B is formed in the third recess 19 </ b> T <b> 3 of the gas barrier layer 19.

  Each colored layer 20R, 20G, 20B is made of a material in which a transparent binder layer is mixed with a pigment or a dye. The width of each colored layer 20R, 20G, 20B is about 10 μm, and each layer is adjusted to the same width as the pixel electrode 13 of the light emitting element 12. Each of the colored layers 20R, 20G, and 20B needs to have a predetermined thickness for coloring the light emitted from the light emitting element 12, and is in a range of, for example, 1.2 μm to 1.5 μm. The thickness of each colored layer 20R, 20G, 20B is adjusted for each color in consideration of white balance. The colored layers 20R, 20G, and 20B allow the emitted light of the light emitting layer 15 to pass through each of the colored layers 20R, 20G, and 20B and to be emitted to the viewer as red, green, and blue light. It has become. Thus, in the organic electroluminescence device 1, color display is performed by using the light emitted from the light emitting layer 15 and the colored layers 20R, 20G, and 20B having a plurality of colors.

FIG. 2A is a cross-sectional view of a main part of the organic electroluminescence device 1 according to this embodiment. FIG. 2B is an enlarged view of the first recess 19T1 among the recesses 19T formed in the gas barrier layer 19 according to the present embodiment.
2A and 2B, the symbol DR is the thickness of the red colored layer 20R, the symbol DG is the thickness of the green colored layer 20G, and the symbol DB is the thickness of the blue colored layer 20B. Yes, the symbol TR is the height of the red colored layer 20R, the symbol TG is the height of the green colored layer 20G, and the symbol TB is the thickness of the blue colored layer 20B.
Here, the “thickness of the colored layer” is the length of the colored layer in the direction orthogonal to the upper surface of the element substrate 10 (distance between the lower surface and the upper surface of the colored layer). Note that the lower surface of the colored layer is a concave surface of the uneven surface 19S as shown in FIG.
The “height of the upper surface of the colored layer” is the height of the upper surface of the colored layer in the direction orthogonal to the upper surface of the element substrate 10 (the distance between the upper surface of the organic buffer layer 18 and the upper surface of the colored layer). is there.

  As shown in FIG. 2A, the color filter layer 20 includes, as colored layers, a red colored layer 20R, a green colored layer 20G having a thickness larger than the red colored layer 20R, and the green colored layer 20G. And a blue colored layer 20B having a large thickness.

  In the present embodiment, the red colored layer 20 </ b> R is formed in a state where the lower part enters the first recess 19 </ b> T <b> 1 of the gas barrier layer 19. The green colored layer 20G is formed in a state where the lower portion enters the second recess 19T2 of the gas barrier layer 19. The blue colored layer 20 </ b> B is formed in a state where the lower part enters the third recess 19 </ b> T <b> 3 of the gas barrier layer 19.

  In the present embodiment, the light emitting element 12 is disposed so as to overlap the colored layers 20R, 20G, and 20B in plan view. The light emitting element 12 is disposed so as not to overlap the boundary portions of the colored layers 20R, 20G, and 20B in plan view.

  In the present embodiment, the depth of the second recess 19T2 is greater than the depth of the first recess 19T1, and the third recess 19T3 is greater than the depth of the second recess 19T2. . Here, the “depth of the concave portion” is the length of the concave portion in the direction orthogonal to the upper surface of the element substrate 10 (distance between the concave surface of the concave and convex surface 19S and the upper surface of the gas barrier layer 19).

  The thickness DG of the green coloring layer 20G is larger than the thickness DR of the red coloring layer 20R, and the thickness DB of the blue coloring layer 20B is larger than the thickness DG of the green coloring layer 20G. The height TR of the upper surface of the red colored layer 20R, the height TG of the upper surface of the green colored layer 20G, and the height TB of the upper surface of the blue colored layer 20B are equal to each other.

  That is, the depths of the concave portions 19T1, 19T2, and 19T3 are adjusted corresponding to the thicknesses DR, DG, and DB of the colored layers 20R, 20G, and 20B, and the heights of the upper surfaces of the colored layers 20R, 20G, and 20B are adjusted. TR, TG, and TB are equal to each other.

  In the present embodiment, the relationship between the thicknesses of the colored layers 20R, 20G, and 20B is such that the thickness DR of the red colored layer 20R <the thickness DG of the green colored layer 20G <the thickness DB of the blue colored layer 20B. However, the present invention is not limited to this, and a desired thickness can be obtained for each colored layer.

  Returning to FIG. 1, a light emitting layer 15 is formed on the entire surface of the TFT array substrate 11 below the color filter layer 20, and the light emitting layer 15 is divided into pixel partition walls 16 having an insulating property. It is configured as. Therefore, the light emitting layer 15 at the position facing the pixel electrode 13 becomes a light emitting area, and the light emitting layer 15 at the position facing the pixel partition wall 16 becomes a non-light emitting area. Therefore, in the color filter layer 20 formed on the surface of the gas barrier layer 19, emitted light can be taken out only from the colored layers 20R, 20G, and 20B located at the position facing the light emitting element 12.

  The arrangement of the colored layers 20R, 20G, and 20B may be arbitrary. For example, the colored filter layers 20R, 20G, and 20B may be formed in stripes to form the color filter layer 20, or the colored layers 20R, 20R, The color filter layer 20 may be formed by forming 20G and 20B in a mosaic shape. Furthermore, in addition to the basic colors of R, G, and B of the colored layers 20R, 20G, and 20B, light blue, light cyan, or the like may be added depending on the purpose.

(Method for manufacturing organic electroluminescence device)
Next, with reference to FIGS. 3-8, the manufacturing method of the organic electroluminescent apparatus 1 in this embodiment is demonstrated. 3-8 is explanatory drawing about the manufacturing process of the organic electroluminescent apparatus 1. FIG.

  First, as shown in FIG. 3A, a base on which the color filter layer 20 is formed, in which the electrode protection layer 17, the organic buffer layer 18, and the gas barrier layer 19 are formed on the element substrate 10, is prepared.

In the base forming method, first, the electrode protection layer 17 is formed so as to cover the entire exposed portion of the light emitting element 12 on the element substrate 10.
Specifically, for the electrode protective layer 17, a silicon compound containing nitrogen, that is, silicon nitride, silicon oxynitride, or the like is formed by a high-density plasma film forming method such as an ECR sputtering method or an ion plating method. . Note that an inorganic oxide such as SiO ₂ or an alkali halide such as LiF or MgF as a transparent inorganic material may be laminated by a vacuum vapor deposition method or a high-density plasma film formation method. Note that an inorganic oxide such as SiO ₂ or an alkali halide such as LiF or MgF as a transparent inorganic material may be laminated by a vacuum vapor deposition method or a high-density plasma film formation method.

Next, the organic buffer layer 18 is formed on the electrode protective layer 17.
Specifically, the organic buffer layer 18 that has been screen-printed in a reduced-pressure atmosphere is cured by heating in the range of 60 to 100 ° C.

Next, the gas barrier layer 19 is formed on the organic buffer layer 18.
Specifically, it is formed by a high density plasma film forming method such as an ECR sputtering method or an ion plating method. In addition, reliability is improved by improving the adhesion by oxygen plasma treatment before the formation.

Next, an uneven surface 19 </ b> S having unevenness is formed on the upper surface of the gas barrier layer 19.
Specifically, the uneven surface 19 </ b> S is formed on the upper surface of the gas barrier layer 19 by performing dry etching (ashing).

  Incidentally, there is a configuration in which a color filter layer is formed on a transparent protective layer having a flat upper surface. As the definition of organic electroluminescence devices increases, the pixel size decreases, and the color filter layer requires a predetermined adhesion to the transparent protective layer. However, when the upper surface of the transparent protective layer is flat, the adhesion between the transparent protective layer and the color filter layer is reduced, and the color filter layer may be peeled off from the transparent protective layer.

  Therefore, in the present invention, the upper surface of the gas barrier layer 19 is roughened by ashing to form an uneven surface 19S having unevenness, and the color filter layer 20 is formed on the uneven surface 19S of the gas barrier layer 19.

  Specifically, as shown in FIG. 3B, a protective resist 21 is applied to the upper surface of the gas barrier layer 19.

  Next, as shown in FIG. 3C, the protective resist 21 is exposed to UV through a photomask 21M to be insolubilized.

  Next, as shown in FIG. 3D, after removing unnecessary portions of the protective resist 21 with a developer, the remaining protective resist 21 is cured by baking. Thereby, the protective resist 21 having the opening 21T is formed on the upper surface of the gas barrier layer 19.

  Next, as shown in FIG. 4A, ashing is performed on the upper surface of the gas barrier layer 19 from above the protective resist 21. As a result, in the gas barrier layer 19, ashing is performed only on a portion exposed from the opening 21 </ b> T of the protective resist 21.

  Here, “ashing” means that gas is turned into plasma at a high frequency or the like and the surface of the gas barrier layer is peeled off using the plasma (plasma ashing). When the gas is made into plasma by non-ionizing radiation such as visible light or microwave and the photoresist is placed in the plasma, the photoresist is combined with radicals in the plasma to evaporate and peel off.

Note that reactive gas etching may be used for ashing, and reactive ion etching may be used when a necessary amount cannot be dug. Moreover, oxygen is preferable as the gas used. In the reactive ion etching, when the etching target is a silicon-based material such as SiO ₂ , CF ₄ , SF _6, or the like may be used in combination with oxygen.

  Next, the protective resist 21 is removed with a developer. As a result, as shown in FIG. 4B, a first recess 19T1 is formed on the upper surface of the gas barrier layer 19. A first uneven surface 19S1 is formed at the bottom of the first recess 19T1.

Next, the red colored layer 20R is formed using a photolithography method. Specifically, as shown in FIG. 4C, a color resist 20RE for a red colored layer is applied to the upper surface of the gas barrier layer 19.
Next, the color resist 20RE is exposed to UV through the photomask 30R for the red colored layer, UV cured, and insolubilized.

  Next, as shown in FIG. 4D, after unnecessary portions of the color resist 20RE are removed with a developer, the remaining color resist 20RE is baked to be cured. Thereby, the red colored layer 20R is formed on the first uneven surface 19S1 of the gas barrier layer 19.

  Next, the green colored layer 20G is formed on the upper surface of the gas barrier layer 19 at a position adjacent to the red colored layer 20R.

  Specifically, as shown in FIG. 5A, a protective resist 22 is applied so as to cover the red colored layer 20R on the gas barrier layer 19.

  Next, as shown in FIG. 5B, the protective resist 22 is exposed through a photomask 22M, UV-cured, and insolubilized.

  Next, as shown in FIG. 5C, after removing unnecessary portions of the protective resist 22 with a developer, the remaining protective resist 22 is cured by baking. Thereby, the protective resist 22 having the opening 22T is formed so as to cover the red colored layer 20R on the gas barrier layer 19.

  Next, as shown in FIG. 5D, ashing is performed on the upper surface of the gas barrier layer 19 from above the protective resist 22. As a result, in the gas barrier layer 19, only the portion exposed from the opening 22T of the protective resist 22 is subjected to ashing.

  Here, the digging amount of the recess is adjusted by adjusting ashing processing conditions (for example, ashing strength and processing time). In this embodiment, the height of the green colored layer 20G formed in the second recess 19T2 is adjusted to be equal to the height of the red colored layer 20R formed in the first recess 19T1. For example, by adjusting the ashing processing conditions, the second color depth is larger than the depth of the first recess 19T1 by the amount (DG-DR) that the green color layer 20G is thicker than the red color layer 20R. The depth of the recess 19T2 is made larger.

  Next, the protective resist 22 is removed with a developer. As a result, as shown in FIG. 6A, a second recess 19T2 is formed at a position adjacent to the first recess 19T1 on the upper surface of the gas barrier layer 19. A second uneven surface 19S2 is formed at the bottom of the second recess 19T2.

  Next, the green colored layer 20G is formed using a photolithography method. Specifically, as shown in FIG. 6B, a color resist 20GE for a green colored layer is applied to the upper surface of the gas barrier layer 19.

  A color resist 20GE for the green colored layer 20 is applied using the red colored layer 20R as a partition. In the present embodiment, the height of the upper surface of the color resist 20GE for the green colored layer 20 is made to coincide with the height of the red colored layer 20R.

  Next, the color resist 20GE is exposed to UV through the green colored layer photomask 30G to be insolubilized.

  Next, as shown in FIG. 6C, after unnecessary portions of the color resist 20GE are removed by a developer, the remaining color resist 20GE is cured by baking. Thereby, the green colored layer 20G is formed on the second uneven surface 19S2 of the gas barrier layer 19. By adjusting the ashing processing conditions described above, the height of the green colored layer 20G matches the height of the red colored layer 20R.

  Next, a blue colored layer 20B is formed on the upper surface of the gas barrier layer 19 at a position adjacent to the green colored layer 20G.

  Specifically, as shown in FIG. 6D, the protective resist 23 is applied so as to cover the red colored layer 20R and the green colored layer 20G on the gas barrier layer 19.

  Next, as shown in FIG. 7A, the protective resist 23 is exposed to UV through a photomask 23M to be insolubilized.

  Next, as shown in FIG. 7B, after unnecessary portions of the protective resist 23 are removed with a developer, the remaining protective resist 23 is cured by baking. Thereby, the protective resist 23 having the opening 23T is formed so as to cover the red colored layer 20R and the green colored layer 20G on the gas barrier layer 19.

  Next, as shown in FIG. 7C, ashing is performed on the upper surface of the gas barrier layer 19 from above the protective resist 23. As a result, in the gas barrier layer 19, ashing is performed only on the portion exposed from the opening 23T of the protective resist 23.

  Here, the digging amount of the recess is adjusted by adjusting ashing processing conditions (for example, ashing strength and processing time). In the present embodiment, the height of the blue colored layer 20B formed in the third recess 19T3 is equal to the height of the red colored layer 20R formed in the first recess 19T1 and the green color formed in the second recess 19T2. The height of the colored layer 20G is adjusted to be equal to the height of the upper surface of both colored layers. For example, by adjusting the ashing processing conditions, the third color depth is larger than the depth of the second recess 19T2 by the amount (DB-DG) that the blue color layer 20B is thicker than the green color layer 20G. The depth of the recess 19T3 is made larger.

  Next, the protective resist 23 is removed with a developer. As a result, as shown in FIG. 7D, a third recess 19T3 is formed at a position adjacent to the second recess 19T2 on the upper surface of the gas barrier layer 19. A third uneven surface 19S3 is formed at the bottom of the third recess 19T3.

  Next, the blue colored layer 20B is formed using a photolithography method. Specifically, as shown in FIG. 8A, a color resist 20BE for a blue colored layer is applied on the upper surface of the gas barrier layer 19.

  Specifically, the color resist 20BE for the blue colored layer is applied using both the colored layers of the red colored layer 20R and the green colored layer 20G as partition walls. In the present embodiment, the height of the upper surface of the color resist 20BE for the blue colored layer is matched with the height of the red colored layer 20R (the height of the green colored layer 20G).

  Next, the color resist 20BE is exposed to UV through the blue colored layer photomask 30B to be insolubilized.

  Next, as shown in FIG. 8B, after unnecessary portions of the color resist 20BE are removed with a developer, the remaining color resist 20BE is cured by baking. Thereby, the blue colored layer 20 </ b> B is formed on the third uneven surface 19 </ b> S <b> 3 of the gas barrier layer 19. By adjusting the ashing processing conditions described above, the height of the blue colored layer 20B matches the height of the upper surface of both the colored layer 20R and the green colored layer 20G.

As a result, the color filter layer 20 is formed on the uneven surface 19S on the upper surface of the gas barrier layer 19.
By passing through the above process, the organic electroluminescent apparatus 1 in this embodiment mentioned above can be obtained.

  According to the organic electroluminescent device 1 and the manufacturing method of the organic electroluminescent device 1 of the present embodiment, since the color filter layer 20 is formed on the uneven surface 19S of the gas barrier layer 19, a part of the color filter layer 20 is a gas barrier. A so-called anchor effect (throwing effect) is generated which becomes difficult to come out in a state where the wedges are driven into the unevenness of the layer 19. Therefore, peeling of the color filter layer 20 can be suppressed. Further, by using dry etching, irregularities can be formed on the surface of the gas barrier layer 19 with an appropriate scale.

  In addition, a part of the color filter layer 20 enters the recess 19T and is difficult to come off. Therefore, peeling of the color filter layer 20 can be suppressed.

  Further, the color filter layer 20 is provided with an anchor effect by recesses having different depths. Therefore, peeling of the color filter layer 20 can be suppressed.

  Further, by changing the thickness of the color filter layer 20 for each color layer 20R, 20G, 20B, the color layers 20R, 20G, 20B for each color can be made to have a thickness suitable for the color reproducibility of each color. . Therefore, an optimal color balance can be realized.

  Further, the height TR of the upper surface of the red colored layer 20R, the height TG of the upper surface of the green colored layer 20G, and the height TB of the upper surface of the blue colored layer 20B are equal to each other. Therefore, it becomes easy to form the blue colored layer 20B. In the present specification, “the heights of the upper surfaces of the colored layers are equal to each other” includes an error that occurs in the manufacturing process.

  Further, since the upper surface of the color filter layer 20 is formed flat, it is easy to form a film on the color filter layer 20.

When the color filter layer is formed on the flat surface of the gas barrier layer, the gas barrier layer is made of an inorganic material, and the color filter layer is made of an organic material (the material for forming the gas barrier layer is different from the material for forming the color filter layer) The adhesion between the gas barrier layer and the color filter layer is lower than when the gas barrier layer forming material and the color filter layer forming material are the same.
On the other hand, according to the configuration of the present embodiment, the color filter layer 20 is formed on the uneven surface 19S of the gas barrier layer 19, the gas barrier layer 19 is made of an inorganic material, and the color filter layer 20 is made of an organic material. Therefore, part of the color filter layer 20 made of an organic material easily enters the irregularities of the gas barrier layer 19 made of an inorganic material. Therefore, the anchor effect (throwing effect) is likely to occur. Therefore, it becomes easy to suppress peeling of the color filter layer 20.

  In the present embodiment, the organic EL device 1 having a top emission structure has been described as an example. However, the present invention is not limited to this, and the present invention can also be applied to an organic EL device having a bottom emission structure. For example, in an organic electroluminescence device having a bottom emission structure, a color filter layer is formed on the side of the element substrate opposite to the side on which the organic electroluminescence element is formed.

  In the present embodiment, the configuration in which the recess 19T is formed on the upper surface of the gas barrier layer 19 has been described as an example, but the present invention is not limited thereto. For example, the recess 19T may not be formed on the upper surface of the gas barrier layer 19. What is necessary is just the structure by which the uneven surface 19S is formed in the upper surface of the gas barrier layer 19. FIG.

(Second Embodiment)
FIG. 9 is a cross-sectional view showing an organic electroluminescence device 2 according to the second embodiment of the present invention, corresponding to FIG. Fig.9 (a) is principal part sectional drawing of the organic electroluminescent apparatus 2 which concerns on this embodiment. FIG. 9B is an enlarged view of the recess 29T formed in the gas barrier layer 29 according to the present embodiment.

  As shown in FIGS. 9A and 9B, in the organic electroluminescence device 2 according to the present embodiment, the gas barrier layer 29 has uneven surfaces 29S1, 29S2, and 29S3 having unevenness of different sizes. This is different from the organic electroluminescence device 1 according to the first embodiment described above. Since the other points are the same as the above-described configuration, the same elements as those in FIG. 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 9A, the organic electroluminescence device 2 includes an element substrate 10, an electrode protective layer 17 formed so as to cover the entire exposed portion of the light emitting element 12 on the element substrate 10, and an electrode protective layer. 17, an organic buffer layer 18 formed on the electrode 17, a gas barrier layer 29 formed on the electrode protection layer 17 so as to cover the entire exposed portion of the organic buffer layer 18, and a color filter layer 20 formed on the gas barrier layer 29. And.

  In the present embodiment, the surface (surface) opposite to the organic buffer layer 18 of the gas barrier layer 29 has an uneven surface 29S having unevenness in a region overlapping the pixel electrode 13 when viewed from the direction perpendicular to the substrate 11. Is formed.

  On the surface of the gas barrier layer 29, a recess 29 </ b> T having an uneven surface 29 </ b> S at the bottom is formed in a region overlapping the pixel electrode 13 when viewed from the direction perpendicular to the substrate 11. The recess 29T includes a first recess 29T1, a second recess 29T2 having a depth greater than the first recess 29T1, and a third recess 29T3 having a depth greater than the second recess 29T2. Have. In the gas barrier layer 29, a first recess 29T1, a second recess 29T2, and a third recess 29T3 are formed so as to be adjacent to each other in this order.

  A color filter layer 20 is formed on the uneven surface 29 </ b> S of the gas barrier layer 29. The red colored layer 20 </ b> R is formed in the first recess 29 </ b> T <b> 1 of the gas barrier layer 29. The green colored layer 20G is formed in the second recess 29T2 of the gas barrier layer 29. The blue colored layer 20B is formed in the third recess 29T3 of the gas barrier layer 29.

  In the present embodiment, the red colored layer 20 </ b> R is formed in a state where the lower part enters the first recess 29 </ b> T <b> 1 of the gas barrier layer 29. The green colored layer 20G is formed in a state where the lower portion enters the second recess 29T2 of the gas barrier layer 29. The blue colored layer 20 </ b> B is formed in a state where the lower part enters the third recess 29 </ b> T <b> 3 of the gas barrier layer 29.

  In the present embodiment, the color material of the green color layer 20G is made of a color material having a stronger adhesion to the gas barrier layer 29 than the color material of the red color layer 20R. Further, the color material of the blue color layer 20B is made of a color material having higher adhesion to the gas barrier layer 29 than the color material of the green color layer 20G.

  In the present embodiment, the size of the unevenness of the second uneven surface 29S2 is smaller than the size of the unevenness of the first uneven surface 29S1. The size of the unevenness of the third uneven surface 29S3 is smaller than the size of the unevenness of the second uneven surface 29S2. In the present embodiment, the size of the unevenness differs for each uneven surface. In the present specification, “the size of the unevenness is different” means that the average depth of the unevenness formed on the gas barrier layer 29 is different.

Next, with reference to FIG.9 (b), the manufacturing method of the organic electroluminescent apparatus 2 in this embodiment is demonstrated.
In addition, it is the same as that of the manufacturing method (FIG. 3 (a)-FIG.8 (b)) of the organic electroluminescent apparatus 1 in 1st Embodiment mentioned above except the process conditions at the time of performing ashing on the upper surface of a gas barrier layer. Therefore, detailed description is omitted.

  As shown in FIG. 9B, the size of the unevenness formed in the recess is adjusted by adjusting the ashing processing conditions (for example, the strength of ashing and the processing time). For example, the ashing process condition is adjusted so that the size of the unevenness formed in the second recess 29T2 is smaller than the size of the unevenness formed in the first recess 29T1. Further, the size of the unevenness formed in the third recess 29T3 is made smaller than the size of the unevenness formed in the second recess 29T2.

  The organic electroluminescence device 2 according to the present embodiment described above (see FIG. 9A) can be obtained through the step of forming the color filter layer 20 on the uneven surface 29S on the upper surface of the gas barrier layer 29. .

  According to the organic electroluminescent device 2 and the manufacturing method of the organic electroluminescent device 2 of the present embodiment, the adhesion of the colored layer is improved as the depth of the unevenness is increased. By varying the thickness, the adhesion of the color filter layer 20 can be adjusted appropriately.

(Electronics)
Next, an example of an electronic apparatus provided with the organic electroluminescence device of the embodiment will be described.

  FIG. 10A is a perspective view showing an example of a mobile phone. In FIG. 10A, reference numeral 1000 denotes a mobile phone main body, and reference numeral 1001 denotes a display unit provided with an organic electroluminescence device.

  FIG. 10B is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 10B, reference numeral 1100 indicates a watch body, and reference numeral 1101 indicates a display unit provided with an organic electroluminescence device.

  FIG. 10C is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 10C, reference numeral 1200 denotes an information processing apparatus, reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing body, and reference numeral 1206 denotes a display unit including an organic electroluminescence device.

  Since the electronic devices shown in FIGS. 10A to 10C are provided with the organic electroluminescence device described in the previous embodiment, the electronic devices have excellent display characteristics and excellent reliability.

  In addition to the above, the electronic devices include engineering workstations (EWS), pagers, TVs, viewfinder type or monitor direct view type video tape recorders, electronic notebooks, electronic desk calculators, car navigation devices, POS terminals, A touch panel, a head mounted display (HMD), etc. can be mentioned.

DESCRIPTION OF SYMBOLS 1, 2 ... Organic electroluminescent apparatus, 10 ... Element substrate, 12 ... Light emitting element (organic electroluminescent element), 15 ... Light emitting layer (organic light emitting layer), 19 ... Gas barrier layer (sealing layer), 19S ... Uneven surface, 19S1 ... first uneven surface, 19S2 ... second uneven surface, 19S3 ... third uneven surface, 19T ... concave, 19T1 ... first recess, 19T2 ... second recess, 19T3 ... third recess, 20 ... Color filter layer, 20R ... Red colored layer, 20G ... Green colored layer, 20B ... Blue colored layer, 1000 ... Mobile phone (electronic device), 1100 ... Wristwatch type electronic device (electronic device), 1200 ... Portable information processing device (Electronic device), DR: thickness of the red colored layer, DG: thickness of the green colored layer, DB: thickness of the blue colored layer, TR: height of the upper surface of the red colored layer, TG: upper surface of the green colored layer Height of TB ... height of the upper surface of the blue colored layer

Claims (14)

A substrate,
A first electrode formed on the substrate;
An organic light emitting layer formed on the opposite side of the first electrode from the substrate;
A second electrode formed opposite to the first electrode with the organic light emitting layer interposed therebetween;
A sealing layer formed on a side opposite to the organic light emitting layer of the second electrode;
A color filter layer formed on the opposite side of the sealing layer from the second electrode;
Including
On the surface opposite to the second electrode of the sealing layer, irregularities are formed in a region overlapping the first electrode when viewed from a direction perpendicular to the substrate,
The organic electroluminescent device, wherein the color filter layer is formed on the unevenness of the sealing layer. Including a first pixel and a second pixel, wherein the first pixel and the second pixel include the first electrode;
The color filter layer is provided in a first region corresponding to the first pixel, and is provided in a first colored layer that transmits the first color and a second region corresponding to the second pixel. And a second colored layer that transmits the second color,
The unevenness of the sealing layer includes a first unevenness provided in the first region and a second unevenness provided in the second region,
The organic electroluminescence device according to claim 1, wherein the first unevenness and the second unevenness are different from each other. Including a first recess formed in the first region and a second recess formed in the second region;
The unevenness is formed in the first recess and the second recess,
The organic electroluminescence device according to claim 2, wherein the color filter layer is formed in the first recess and the second recess.   The organic electroluminescence device according to claim 3, wherein the depth of the first recess and the depth of the second recess are different from each other.   5. The organic electroluminescence device according to claim 2, wherein the thickness of the first colored layer and the thickness of the second colored layer are different from each other.   6. The organic electroluminescent device according to claim 2, wherein a height of the upper surface of the first colored layer is equal to a height of the upper surface of the second colored layer.   7. The organic electroluminescence device according to claim 1, wherein a surface of the color filter layer opposite to the sealing layer is flat.   The organic electroluminescence device according to any one of claims 1 to 7, wherein the sealing layer is made of an inorganic material, and the color filter layer is made of an organic material. Forming a first electrode on a substrate;
Forming an organic light emitting layer on the first electrode;
Forming a second electrode on the organic light emitting layer;
Forming a sealing layer on the second electrode;
Forming a color filter layer on the sealing layer,
The step of forming the color filter layer includes:
On the sealing layer, forming a concavo-convex by performing dry etching on a region overlapping the first electrode when viewed from a direction perpendicular to the substrate;
Forming the color filter layer on the irregularities of the sealing layer. A method for producing an organic electroluminescent device, comprising: Including a first pixel and a second pixel, wherein the first pixel and the second pixel include the first electrode;
The color filter layer includes a first colored layer that transmits a first color and a second colored layer that transmits a second color;
The step of forming the irregularities includes:
Applying first dry etching to a first region corresponding to the first pixel on the sealing layer to form first irregularities;
Performing a second dry etching on a second region corresponding to the second pixel on the sealing layer to form a second unevenness different in size from the first unevenness; Including
The step of forming the color filter layer includes:
Forming the first colored layer in the first region of the sealing layer;
Forming the second colored layer in the second region of the sealing layer. The method for manufacturing an organic electroluminescent device according to claim 9, wherein the second colored layer is formed in the second region of the sealing layer. The step of forming the irregularities includes:
Forming a recess on the sealing layer by dry etching;
Forming the irregularities in the recesses of the sealing layer;
The manufacturing method of the organic electroluminescent apparatus of Claim 9 or 10 characterized by the above-mentioned. The step of forming the recess includes
Forming a first recess in the first region on the sealing layer;
Forming a second recess having a depth different from that of the first recess in the second region on the sealing layer,
The step of forming the color filter layer includes:
Forming the first colored layer in the first recess;
Forming the second colored layer in the second recess. 12. The method of manufacturing an organic electroluminescence device according to claim 11, further comprising: The thickness of the first colored layer and the thickness of the second colored layer are different from each other,
The step of forming the recess includes
In the step of forming the color filter layer, the height of the upper surface of the first colored layer formed in the first recess and the height of the upper surface of the second colored layer formed in the second recess 13. The method of manufacturing an organic electroluminescence device according to claim 12, wherein the depth of the first recess and the depth of the second recess are adjusted so as to be equal.   An electronic apparatus comprising the organic electroluminescence device according to claim 1.

Images