JP2013042135A - リードフレーム接続を有するパワーオーバレイ構造 - Google Patents

リードフレーム接続を有するパワーオーバレイ構造 Download PDF

Info

Publication number
JP2013042135A
JP2013042135A JP2012179136A JP2012179136A JP2013042135A JP 2013042135 A JP2013042135 A JP 2013042135A JP 2012179136 A JP2012179136 A JP 2012179136A JP 2012179136 A JP2012179136 A JP 2012179136A JP 2013042135 A JP2013042135 A JP 2013042135A
Authority
JP
Japan
Prior art keywords
pol
lead frame
semiconductor device
substrate
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012179136A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013042135A5 (https=
Inventor
Virupaksha Gowda Arun
アルン・ビルパクシャ・ゴウダ
Alan Mcconnelee Paul
ポウル・アラン・マッコネリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2013042135A publication Critical patent/JP2013042135A/ja
Publication of JP2013042135A5 publication Critical patent/JP2013042135A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/468—Circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2012179136A 2011-08-16 2012-08-13 リードフレーム接続を有するパワーオーバレイ構造 Pending JP2013042135A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/211,057 US8653635B2 (en) 2011-08-16 2011-08-16 Power overlay structure with leadframe connections
US13/211,057 2011-08-16

Publications (2)

Publication Number Publication Date
JP2013042135A true JP2013042135A (ja) 2013-02-28
JP2013042135A5 JP2013042135A5 (https=) 2015-09-17

Family

ID=47071068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012179136A Pending JP2013042135A (ja) 2011-08-16 2012-08-13 リードフレーム接続を有するパワーオーバレイ構造

Country Status (5)

Country Link
US (3) US8653635B2 (https=)
EP (1) EP2571051A3 (https=)
JP (1) JP2013042135A (https=)
KR (1) KR101978512B1 (https=)
CN (1) CN102956594B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140113473A (ko) * 2013-03-14 2014-09-24 제너럴 일렉트릭 캄파니 전력 오버레이 구조 및 그 제조 방법
JP2018152591A (ja) * 2013-03-14 2018-09-27 ゼネラル・エレクトリック・カンパニイ パワーオーバーレイ構造およびその製造方法
JP2023536780A (ja) * 2020-05-29 2023-08-30 ゼネラル・エレクトリック・カンパニイ 電子機器パッケージにおける機械的パンチングされたビア形成およびそれによって形成される電子機器パッケージ

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2975768B1 (fr) 2011-05-26 2016-01-29 Valeo Systemes Thermiques Echangeur thermique, notamment pour vehicule automobile, et dispositif d'admission d'air correspondant
KR20130129712A (ko) * 2012-05-21 2013-11-29 페어차일드코리아반도체 주식회사 반도체 패키지 및 이의 제조방법
US9209121B2 (en) * 2013-02-01 2015-12-08 Analog Devices, Inc. Double-sided package
US9099316B2 (en) * 2013-10-15 2015-08-04 Ixys Corporation Sintered backside shim in a press pack cassette
US9312231B2 (en) * 2013-10-31 2016-04-12 Freescale Semiconductor, Inc. Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process
US9806051B2 (en) * 2014-03-04 2017-10-31 General Electric Company Ultra-thin embedded semiconductor device package and method of manufacturing thereof
US9731959B2 (en) 2014-09-25 2017-08-15 Analog Devices, Inc. Integrated device packages having a MEMS die sealed in a cavity by a processor die and method of manufacturing the same
US9613843B2 (en) * 2014-10-13 2017-04-04 General Electric Company Power overlay structure having wirebonds and method of manufacturing same
US9533878B2 (en) 2014-12-11 2017-01-03 Analog Devices, Inc. Low stress compact device packages
EP3449502B1 (en) 2016-04-26 2021-06-30 Linear Technology LLC Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
US10333493B2 (en) 2016-08-25 2019-06-25 General Electric Company Embedded RF filter package structure and method of manufacturing thereof
US9953917B1 (en) 2016-12-12 2018-04-24 General Electric Company Electronics package with embedded through-connect and resistor structure and method of manufacturing thereof
US9953913B1 (en) 2016-12-12 2018-04-24 General Electric Company Electronics package with embedded through-connect structure and method of manufacturing thereof
US10541153B2 (en) 2017-08-03 2020-01-21 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10541209B2 (en) 2017-08-03 2020-01-21 General Electric Company Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof
US10804115B2 (en) 2017-08-03 2020-10-13 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
US10957832B2 (en) 2018-10-22 2021-03-23 General Electric Company Electronics package for light emitting semiconductor devices and method of manufacturing thereof
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
US11296005B2 (en) 2019-09-24 2022-04-05 Analog Devices, Inc. Integrated device package including thermally conductive element and method of manufacturing same
KR102305952B1 (ko) * 2020-04-03 2021-09-30 주식회사 코스텍시스 플립 칩 본딩 기반 반도체 디바이스 패키지
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
US11950394B2 (en) 2021-10-12 2024-04-02 Ge Aviation Systems Llc Liquid-cooled assembly and method
US12315776B2 (en) 2021-11-08 2025-05-27 Analog Devices, Inc. Integrated device package with an integrated heat sink
JP7760360B2 (ja) * 2021-12-23 2025-10-27 新光電気工業株式会社 半導体装置
US12322916B2 (en) * 2022-06-22 2025-06-03 Ge Aviation Systems Llc Electronic connection assembly
US20240112976A1 (en) * 2022-09-30 2024-04-04 Ge Aviation Systems Llc Accurate and fast power module properties assessment
JP2025179592A (ja) * 2024-05-28 2025-12-10 新光電気工業株式会社 半導体装置及び半導体装置の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049280A (ja) * 1998-07-31 2000-02-18 Toshiba Corp 半導体装置とその製造方法
JP2002521843A (ja) * 1998-07-31 2002-07-16 イクシス コーポレーション 電気的に分離したパワー半導体パッケージ
JP2004006603A (ja) * 2002-03-26 2004-01-08 Fuji Electric Holdings Co Ltd 半導体パワーデバイス
JP2007027261A (ja) * 2005-07-13 2007-02-01 Mitsubishi Electric Corp パワーモジュール
JP2007053379A (ja) * 2005-08-17 2007-03-01 General Electric Co <Ge> パワー半導体パッケージングの方法および構造
JP2007157863A (ja) * 2005-12-02 2007-06-21 Hitachi Ltd パワー半導体装置及びその製造方法
JP2007521656A (ja) * 2003-06-25 2007-08-02 アドバンスド インターコネクト テクノロジーズ リミテッド 半導体パッケージのためのリード・フレーム・ルーティングされたチップ・パッド
JP2007287833A (ja) * 2006-04-14 2007-11-01 Mitsubishi Electric Corp 電力用半導体装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992011743A2 (en) * 1990-12-19 1992-07-09 Vlsi Technology, Inc. An interconnect structure for connecting electronic devices
EP0547807A3 (en) * 1991-12-16 1993-09-22 General Electric Company Packaged electronic system
US5888884A (en) * 1998-01-02 1999-03-30 General Electric Company Electronic device pad relocation, precision placement, and packaging in arrays
US6306680B1 (en) 1999-02-22 2001-10-23 General Electric Company Power overlay chip scale packages for discrete power devices
US6232151B1 (en) * 1999-11-01 2001-05-15 General Electric Company Power electronic module packaging
JP2001244376A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd 半導体装置
JP2002334975A (ja) 2001-05-08 2002-11-22 Nec Corp 半導体装置の支持構造、ｃｃｄ半導体装置、その製造方法、及び、ｃｃｄ半導体装置用パッケージ
EP1556894A4 (en) * 2002-09-30 2009-01-14 Advanced Interconnect Tech Ltd THERMALLY IMPROVED SEALING FOR SINGLE-LOCKING ASSEMBLY
EP1570524A4 (en) 2002-12-09 2007-07-04 Advanced Interconnect Tech Ltd CAPSULATION WITH EXPONED INTEGRATED CIRCUIT ELEMENT
US6867481B2 (en) * 2003-04-11 2005-03-15 Fairchild Semiconductor Corporation Lead frame structure with aperture or groove for flip chip in a leaded molded package
US7233064B2 (en) * 2004-03-10 2007-06-19 Micron Technology, Inc. Semiconductor BGA package having a segmented voltage plane and method of making
US7286736B2 (en) * 2004-07-22 2007-10-23 Finisar Corporation Z-axis alignment of an optoelectronic component using a composite adhesive
JP2006073655A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体モジュール
US7919844B2 (en) * 2005-05-26 2011-04-05 Aprolase Development Co., Llc Tier structure with tier frame having a feedthrough structure
US7829386B2 (en) * 2005-08-17 2010-11-09 General Electric Company Power semiconductor packaging method and structure
JP5404987B2 (ja) * 2005-09-13 2014-02-05 三洋電機株式会社 太陽電池モジュール
US7518236B2 (en) * 2005-10-26 2009-04-14 General Electric Company Power circuit package and fabrication method
US8018056B2 (en) * 2005-12-21 2011-09-13 International Rectifier Corporation Package for high power density devices
JP5291864B2 (ja) * 2006-02-21 2013-09-18 ルネサスエレクトロニクス株式会社 Ｄｃ／ｄｃコンバータ用半導体装置の製造方法およびｄｃ／ｄｃコンバータ用半導体装置
US20070257343A1 (en) * 2006-05-05 2007-11-08 Hauenstein Henning M Die-on-leadframe (dol) with high voltage isolation
US7910385B2 (en) * 2006-05-12 2011-03-22 Micron Technology, Inc. Method of fabricating microelectronic devices
US20080006936A1 (en) * 2006-07-10 2008-01-10 Shih-Ping Hsu Superfine-circuit semiconductor package structure
US7524775B2 (en) * 2006-07-13 2009-04-28 Infineon Technologies Ag Method for producing a dielectric layer for an electronic component
CN101202259B (zh) * 2006-12-13 2010-07-21 财团法人工业技术研究院 芯片堆栈封装结构、内埋式芯片封装结构及其制造方法
TWI376774B (en) * 2007-06-08 2012-11-11 Cyntec Co Ltd Three dimensional package structure
TWI355068B (en) * 2008-02-18 2011-12-21 Cyntec Co Ltd Electronic package structure
US8742558B2 (en) * 2008-05-21 2014-06-03 General Electric Company Component protection for advanced packaging applications
US8026608B2 (en) * 2009-03-24 2011-09-27 General Electric Company Stackable electronic package
US8349658B2 (en) * 2010-05-26 2013-01-08 Stats Chippac, Ltd. Semiconductor device and method of forming conductive posts and heat sink over semiconductor die using leadframe
US8409922B2 (en) * 2010-09-14 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of forming leadframe interposer over semiconductor die and TSV substrate for vertical electrical interconnect
US8476087B2 (en) * 2011-04-21 2013-07-02 Freescale Semiconductor, Inc. Methods for fabricating sensor device package using a sealing structure
US9001524B1 (en) * 2011-08-01 2015-04-07 Maxim Integrated Products, Inc. Switch-mode power conversion IC package with wrap-around magnetic structure
US8581416B2 (en) * 2011-12-15 2013-11-12 Semiconductor Components Industries, Llc Method of forming a semiconductor device and leadframe therefor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049280A (ja) * 1998-07-31 2000-02-18 Toshiba Corp 半導体装置とその製造方法
JP2002521843A (ja) * 1998-07-31 2002-07-16 イクシス コーポレーション 電気的に分離したパワー半導体パッケージ
JP2004006603A (ja) * 2002-03-26 2004-01-08 Fuji Electric Holdings Co Ltd 半導体パワーデバイス
JP2007521656A (ja) * 2003-06-25 2007-08-02 アドバンスド インターコネクト テクノロジーズ リミテッド 半導体パッケージのためのリード・フレーム・ルーティングされたチップ・パッド
JP2007027261A (ja) * 2005-07-13 2007-02-01 Mitsubishi Electric Corp パワーモジュール
JP2007053379A (ja) * 2005-08-17 2007-03-01 General Electric Co <Ge> パワー半導体パッケージングの方法および構造
JP2007157863A (ja) * 2005-12-02 2007-06-21 Hitachi Ltd パワー半導体装置及びその製造方法
JP2007287833A (ja) * 2006-04-14 2007-11-01 Mitsubishi Electric Corp 電力用半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140113473A (ko) * 2013-03-14 2014-09-24 제너럴 일렉트릭 캄파니 전력 오버레이 구조 및 그 제조 방법
JP2014179611A (ja) * 2013-03-14 2014-09-25 General Electric Co <Ge> パワーオーバーレイ構造およびその製造方法
JP2018152591A (ja) * 2013-03-14 2018-09-27 ゼネラル・エレクトリック・カンパニイ パワーオーバーレイ構造およびその製造方法
US10269688B2 (en) 2013-03-14 2019-04-23 General Electric Company Power overlay structure and method of making same
KR102151047B1 (ko) 2013-03-14 2020-09-02 제너럴 일렉트릭 캄파니 전력 오버레이 구조 및 그 제조 방법
JP2023536780A (ja) * 2020-05-29 2023-08-30 ゼネラル・エレクトリック・カンパニイ 電子機器パッケージにおける機械的パンチングされたビア形成およびそれによって形成される電子機器パッケージ

Also Published As

Publication number Publication date
CN102956594B (zh) 2017-07-18
US20140138806A1 (en) 2014-05-22
KR20130020758A (ko) 2013-02-28
US20140138807A1 (en) 2014-05-22
US9165864B2 (en) 2015-10-20
KR101978512B1 (ko) 2019-09-03
US9171785B2 (en) 2015-10-27
US8653635B2 (en) 2014-02-18
EP2571051A3 (en) 2017-10-18
CN102956594A (zh) 2013-03-06
US20130043571A1 (en) 2013-02-21
EP2571051A2 (en) 2013-03-20

Similar Documents

Publication Publication Date Title
US8653635B2 (en) Power overlay structure with leadframe connections
US10186477B2 (en) Power overlay structure and method of making same
CN104051377B (zh) 功率覆盖结构及其制作方法
US9184124B2 (en) Reliable surface mount integrated power module

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150804

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150804

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160524

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160816

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170207

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20170425

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170510

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20171031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180219

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20180227

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20180427