JP2013038417A - ＧａＮＬＥＤ用高速アニール - Google Patents

ＧａＮＬＥＤ用高速アニール Download PDF

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Publication number
JP2013038417A
JP2013038417A JP2012161560A JP2012161560A JP2013038417A JP 2013038417 A JP2013038417 A JP 2013038417A JP 2012161560 A JP2012161560 A JP 2012161560A JP 2012161560 A JP2012161560 A JP 2012161560A JP 2013038417 A JP2013038417 A JP 2013038417A
Authority
JP
Japan
Prior art keywords
gan
layer
type
annealing
type contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012161560A
Other languages
English (en)
Japanese (ja)
Inventor
Yun Wang
ワン、ユン
M Andrew Hawryluk
ハウリーラック、エム、アンドリュー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ultratech Inc
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/136,019 external-priority patent/US8658451B2/en
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of JP2013038417A publication Critical patent/JP2013038417A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2012161560A 2011-07-20 2012-07-20 ＧａＮＬＥＤ用高速アニール Pending JP2013038417A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/136,019 2011-07-20
US13/136,019 US8658451B2 (en) 2009-11-06 2011-07-20 Activating GaN LEDs by laser spike annealing and flash annealing

Publications (1)

Publication Number Publication Date
JP2013038417A true JP2013038417A (ja) 2013-02-21

Family

ID=47534677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012161560A Pending JP2013038417A (ja) 2011-07-20 2012-07-20 ＧａＮＬＥＤ用高速アニール

Country Status (4)

Country Link
JP (1) JP2013038417A (zh)
KR (1) KR20130011933A (zh)
CN (1) CN102891225A (zh)
TW (1) TWI453953B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014209556A (ja) * 2013-02-28 2014-11-06 ウルトラテック インク 発光ダイオードを利用した材料の製造システムおよび製造方法
CN110021685A (zh) * 2018-01-19 2019-07-16 东莞市中晶半导体科技有限公司 一种氮化镓基高光效led外延垒晶片及其制备方法
JP2020035790A (ja) * 2018-08-27 2020-03-05 株式会社Ｓｃｒｅｅｎホールディングス ｐ型窒化ガリウム系半導体の製造方法および熱処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094404A (ja) * 2007-10-11 2009-04-30 Advanced Lcd Technologies Development Center Co Ltd 熱処理方法及び熱処理装置
JP2011060897A (ja) * 2009-09-08 2011-03-24 Toshiba Corp アニール装置及びアニール方法
JP2011077147A (ja) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2011101000A (ja) * 2009-11-06 2011-05-19 Ultratech Inc ＧａＮＬＥＤ用レーザスパイクアニール

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6639354B1 (en) * 1999-07-23 2003-10-28 Sony Corporation Light emitting device, production method thereof, and light emitting apparatus and display unit using the same
US6455877B1 (en) * 1999-09-08 2002-09-24 Sharp Kabushiki Kaisha III-N compound semiconductor device
TW451504B (en) * 2000-07-28 2001-08-21 Opto Tech Corp Compound semiconductor device and method for making the same
JP4342429B2 (ja) * 2004-02-09 2009-10-14 株式会社東芝 半導体装置の製造方法
EP1783824A4 (en) * 2004-08-06 2009-04-01 Sumitomo Electric Industries METHOD FOR MANUFACTURING P-TYPE SEMICONDUCTORS AND SEMICONDUCTOR ELEMENT
JP5047508B2 (ja) * 2006-02-27 2012-10-10 シャープ株式会社 窒化物半導体発光素子の製造方法
US7968438B2 (en) * 2006-08-08 2011-06-28 Stc.Unm Ultra-thin high-quality germanium on silicon by low-temperature epitaxy and insulator-capped annealing
KR101413370B1 (ko) * 2008-02-29 2014-06-30 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094404A (ja) * 2007-10-11 2009-04-30 Advanced Lcd Technologies Development Center Co Ltd 熱処理方法及び熱処理装置
JP2011060897A (ja) * 2009-09-08 2011-03-24 Toshiba Corp アニール装置及びアニール方法
JP2011077147A (ja) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2011101000A (ja) * 2009-11-06 2011-05-19 Ultratech Inc ＧａＮＬＥＤ用レーザスパイクアニール

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014209556A (ja) * 2013-02-28 2014-11-06 ウルトラテック インク 発光ダイオードを利用した材料の製造システムおよび製造方法
CN110021685A (zh) * 2018-01-19 2019-07-16 东莞市中晶半导体科技有限公司 一种氮化镓基高光效led外延垒晶片及其制备方法
JP2020035790A (ja) * 2018-08-27 2020-03-05 株式会社Ｓｃｒｅｅｎホールディングス ｐ型窒化ガリウム系半導体の製造方法および熱処理方法
JP7228976B2 (ja) 2018-08-27 2023-02-27 株式会社Ｓｃｒｅｅｎホールディングス ｐ型窒化ガリウム系半導体の製造方法および熱処理方法

Also Published As

Publication number Publication date
KR20130011933A (ko) 2013-01-30
TW201306309A (zh) 2013-02-01
TWI453953B (zh) 2014-09-21
CN102891225A (zh) 2013-01-23

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