JP2013028835A - Film formation method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film formation method by which, when a mask for film formation is removed after a film is formed on a workpiece by using the mask for film formation, the formed film is prevented from being peeled from the workpiece and a film having a predetermined shape can be formed on the workpiece.SOLUTION: The film formation method includes: a mask arrangement step where one main surface of a mask for film formation having such a space for film formation that penetrates to the other main surface side from the one main surface side and where the opening in the one main surface side is larger in size than that of the opening on the other main surface side, is brought into a workpiece to arrange the mask for film formation; a film formation step where a film is formed in a direction directing to the space for film formation from the other main surface side of the mask for film formation; and a mask removal step where the mask for film formation is removed from the film-formed workpiece.

Description

  The present invention relates to a film forming method for forming a film having a predetermined shape on a film formation by film formation.

Electronic component elements often used in electronic devices are formed by, for example, forming a film having a predetermined shape on an object to be formed, and hermetically sealed with an element mounting member and a lid member.
For example, as shown in FIG. 4, the piezoelectric vibrating element 200 which is an example of such an electronic component element has a piezoelectric piece 210 which is a film formation object in a tuning fork shape, and the piezoelectric piece 210 has a predetermined shape. The film is formed.

  For example, as illustrated in FIG. 4, the piezoelectric piece 210 includes a base portion 211 and two pairs of vibrating arm portions 212, and is formed in a tuning fork shape by a photolithography technique and an etching technique.

  For example, as shown in FIG. 4, the base 211 is formed in a flat plate shape having both main surfaces rectangular.

  For example, as shown in FIG. 4, the two pairs of vibrating arm portions 212 are extended from the predetermined one side surface of the base portion 211 in the same direction.

For example, the film is formed in a predetermined shape at a predetermined position of the piezoelectric piece 210.
The film is composed of an excitation electrode 221 (221a, 221c), a connection electrode 222, a wiring part 223, and a frequency adjustment electrode 230.

For example, as shown in FIG. 4, the excitation electrodes 221 are provided in pairs in each of the vibrating arm portions 212, and the surfaces of the vibrating arm portions 212 that are flush with one main surface of the base portion 211, The surface of the vibrating arm 212 that is flush with the other main surface of the base 211, the surface of the vibrating arm 212 facing the adjacent vibrating arm 212, and the vibration facing the adjacent vibrating arm 212 One is provided on each surface facing the surface of the arm portion 212.
In addition, in the excitation electrode 221, the excitation electrode 221 a provided on the surface of the vibrating arm portion 212 that is flush with one main surface of the base portion 211 is flush with the other main surface of the base portion 211. The excitation electrode 221 provided on the surface of the vibrating arm portion 212 is electrically connected.
In addition, the excitation electrode 221 is provided on the surface of the vibrating arm portion 212 facing the adjacent vibrating arm portion 212 side. The excitation electrode 221c provided on the surface of the vibrating arm portion 212 facing the adjacent vibrating arm portion 212 side is provided. The excitation electrode 221 is electrically connected.
Therefore, the excitation electrode 221 provided on the facing surface of the vibrating arm 212 has a structure having the same potential.

  For example, as shown in FIG. 4, the connection electrodes 222 form a pair, and are provided from one main surface of the base 211 to the other main surface of the base 211, When viewed, it is provided so as to be located at both ends of the side of the base 211 opposite to the side of the base 211 in contact with the vibrating arm 212.

  The wiring portion 223 is provided on the piezoelectric piece 210 so as to electrically connect between the predetermined excitation electrodes 221 or between the predetermined excitation electrodes 221 and the connection electrodes 222.

Such a piezoelectric vibrating element 220 has a vibrating arm adjacent to the excitation electrode 221a provided on the surface of one vibrating arm 212 where one connection electrode 222 is flush with one main surface of the base 211. It is in a state of being electrically connected to the excitation electrode 221 and the wiring part 223 provided on the surface of the other vibrating arm part 212 facing the part 212 side.
At this time, the excitation electrodes 221 provided on opposing surfaces in the same vibrating arm portion 212 are electrically connected.

As shown in FIG. 4, the frequency adjusting electrodes 230 form a pair, and one is provided on each surface of the vibrating arm portion 212 that is flush with both main surfaces of the base portion 211.
Further, the frequency adjusting electrode 230 is generally thicker than the excitation electrode 221, the connection electrode 222, and the wiring part 223.
The frequency adjusting electrode 230 has a laminated structure made of a metal in which a gold layer is provided on a chromium layer, for example.

  Such a piezoelectric vibration element 230 has a structure that vibrates the two pairs of vibrating arm portions 212 by applying an alternating voltage to the two pairs of connection electrodes 222.

Further, when the electrical state when the vibrating arm 212 is vibrating with such a piezoelectric vibrating element is instantaneously captured, one vibrating arm 212 has two predetermined excitations of the vibrating arm 212. The electrode 212 has a positive potential, the other two predetermined excitation electrodes 212 of the one vibrating arm 212 have a negative potential, and an electric field is generated in a direction from the predetermined two excitation electrodes 212 toward the other two excitation electrodes. Has occurred.
At this time, in the other vibrating arm portion 212, two predetermined excitation electrodes 212 of the other vibrating arm portion 212 have a negative potential, and two other predetermined excitation electrodes 212 of the other vibrating arm portion 212 have a positive potential. An electric field is generated in a direction from the other two predetermined excitation electrodes 212 toward the predetermined two excitation electrodes 212.
In such a piezoelectric vibrating element 200, an alternating voltage is connected to two pairs of connection electrodes 222, and an electric field is generated in each vibrating arm portion 212, thereby causing an expansion / contraction phenomenon in each vibrating arm portion 212. Flexurally vibrates at a predetermined resonance frequency set to 212.
In addition, such a piezoelectric vibration element 200 has a configuration in which the resonance frequency can be adjusted by increasing or decreasing the amount of metal constituting the frequency adjustment electrode 230 provided in each vibration arm portion 212. (For example, refer to Patent Document 1).

The film of the piezoelectric vibration element 200 which is an example of the electronic component element as described above is, for example, a film having a laminated structure made of metal in which a gold layer is provided on a chromium layer, and the excitation electrode 221 and the connection electrode 222, the wiring part 223, and the frequency adjusting electrode 230.
In general, the excitation electrode 221, the connection electrode 222, and the wiring part 223 are formed by a photolithography technique and an etching technique, and the frequency adjustment electrode 230 is formed by a sputtering method.

Hereinafter, a film forming method for forming and forming the frequency adjusting electrode 230 will be described.
At this time, the piezoelectric piece 210 described above corresponds to the film formation target H (see FIG. 6B), and corresponds to the film M2 (see FIG. 6B) on which the frequency adjusting electrode 230 is formed. .
Such a film formation method includes, for example, a mask placement process, a film formation process, and a mask removal process.

(Mask placement process)
As shown in FIG. 5, the mask placement process includes a film formation space 241 that penetrates from one main surface to the other main surface and has openings on both main surfaces in the same shape. In this step, one of the main surfaces of the film mask 240 is brought into contact with the film formation target H and the film formation mask 240 is disposed.
At this time, the size of the opening on one main surface side of the film formation mask 240 and the size of the opening on the other main surface side of the film formation mask 240 are the same as the size of the frequency adjustment electrode 230. Yes.
Further, in the mask arrangement process, a film of the film formation target H is formed when viewed from the other main surface side of the film formation mask 240 toward the one main surface side of the film formation mask 240. The portion is arranged and held so as to overlap the opening of the film formation space 241 of the film formation mask 240.

(Film formation process)
The film forming step is a step of forming a film M (M1, M2) from the other main surface side of the film forming mask 240, as shown in FIGS. 6A and 6B. It is.
In the film forming step, for example, sputtering is used, and as shown in FIG. 6A, the film forming source S is placed on the other main surface of the film forming mask 240 with respect to one main surface of the film forming mask 240. In a state of being positioned on the surface side, film formation is performed in a direction from the other main surface of the film formation mask 240 toward one main surface of the film formation mask 240.
Therefore, the film M formed after the film forming process is formed in the film forming space 241 and the film M1 formed on the other main surface side of the film forming mask 240 as shown in FIG. The film M2 is formed on the surface of the film formation target H facing the surface.
As described above, the film formation mask 240 has the same opening size in the film formation space 241 on both main surfaces. For this reason, the film M2 formed on the film formation object H in the film formation space 241 has a surface in contact with the film formation object H and a surface facing this surface as the film formation space. The film is formed so as to be in contact with the surface of the film formation mask 240 exposed in the area 241.
Here, the surface of the film M2 to be deposited on the deposition target H that is in contact with the deposition target H is defined as one main surface of the film M2 to be deposited on the deposition target H. The film M2 formed on the film formation object H is defined as the other main surface of the film M2 formed on the film formation object H. The surface in contact with both the main surfaces is defined as the side surface of the film M2 formed on the film formation target H.
That is, the film M2 formed on the film formation object H facing the film formation space 241 has the film formation mask 240 provided with the entire side surface of the film M2 formed on the film formation object H. The film is formed in contact with the surface in the film formation space 241.

(Mask removal process)
The mask removal step is a step of removing the film formation mask 240 from the film formation target H.

  Therefore, in such a film forming method, the first main surface penetrates from the other main surface, and the size of the opening on one main surface side is the same as the size of the opening on the other main surface side. The film formation mask 240 is arranged with one main surface of the film formation mask 240 having the film formation space 241 in contact with the film formation target H, and the other main surface of the film formation mask 240 is arranged. A film M is formed from the surface side, and a film is formed on the film formation target H by removing the film formation mask 240.

  JP 2007-329879 A

However, in the conventional film formation method, since the size of the opening of the film formation space on both main surfaces of the film formation mask is the same, one main surface of the film formation mask is deposited. When a film is formed in contact with an object, the entire side surface of the film formed on the deposition target is in contact with a surface in the film formation space provided in the film formation mask.
For this reason, in the conventional film formation method, the film is formed in a state where the adhesion strength between the film formation film and the formed film is weaker than the adhesion strength between the film formation mask and the formed film. Therefore, when the film formation mask is removed, the film formed from the film formation may be peeled off together.
Therefore, in the conventional film forming method, the film formed from the deposition target is peeled off, and a film having a predetermined shape cannot be formed, which may reduce productivity.

  Therefore, the present invention prevents the film formed from the film formation from being peeled off when the film formation mask is removed after the film formation film is formed using the film formation mask. An object of the present invention is to provide a film forming method capable of forming the above film on an object to be formed.

  In order to solve the above-mentioned problem, one main surface penetrates from the other main surface, and the size of the opening on one main surface side is larger than the size of the opening on the other main surface side. A mask placement step of placing one of the main surfaces of the film formation mask having a film formation space in contact with an object to be formed and placing the film formation mask, and from the other main surface side of the film formation mask A film forming process for forming a film in a direction facing the film forming space; and a mask removing process for removing the film forming mask from the film-formed object. And

According to such a film forming method, the size of the opening of the film formation space on one main surface side of the film formation mask is equal to the opening of the film formation space on the other main surface side of the film formation mask. Therefore, when a film is formed by bringing one main surface of the film formation mask into contact with the film formation object, the surface of the film formed on the film formation object is in contact with the film formation object. It is possible to form a film without bringing the opposing surface into contact with the surface in the film formation space provided in the film formation mask.
Therefore, according to such a film formation method, the adhesion strength between the film formation mask and the formed film is higher than that of the conventional film formation method. Since the film can be formed in a weakened state, when the film formation mask is removed, it is possible to prevent the film formed from the deposition target from being peeled off together.
Therefore, according to such a film formation method, the adhesion strength between the film formed on the film formation object and the film formation object faces the film formed on the film formation object and the film formation space. Since the adhesion strength with the film-forming mask can be increased compared with the conventional film-forming method, it is possible to prevent the film from being peeled off from the film-forming object when the film-forming mask is removed. , Productivity can be improved.

It is a perspective view which shows an example of the electronic component element using the film | membrane formation method which concerns on embodiment of this invention. It is sectional drawing which shows an example of the state of the mask arrangement | positioning process of the film | membrane formation method which concerns on embodiment of this invention. (A) is sectional drawing which shows an example of the state of the film-forming process of the film forming method which concerns on embodiment of this invention, (b) is the film forming process of the film-forming method which concerns on embodiment of this invention It is sectional drawing which shows an example of the state. It is a perspective view which shows an example of the electronic component element using the film forming method which concerns on the conventional embodiment. It is sectional drawing which shows an example of the state of the mask arrangement | positioning process of the conventional film formation method. (A) is sectional drawing which shows an example of the state of the film-forming process of the conventional film forming method, (b) is sectional drawing which shows an example of the state after the film-forming process of the conventional film forming method .

  Next, the best mode for carrying out the present invention will be described. It should be noted that each drawing is exaggerated for easy understanding of the state of each component.

The film forming method according to the embodiment of the present invention is used when manufacturing an electronic component element in which a film is formed on an object to be formed.
Here, for example, a piezoelectric vibration element 100 as shown in FIG. 1 is used as an electronic component element in which a film is formed on an object to be deposited.
Hereinafter, the piezoelectric vibration element 100 will be described.

  As shown in FIG. 1, the piezoelectric vibration element 100 used in the film forming method according to the embodiment of the present invention includes a piezoelectric piece 110, an excitation electrode 121, a connection electrode 122, a wiring portion 123, and a frequency adjustment electrode 130. Has been.

For example, as shown in FIG. 1, the piezoelectric piece 210 includes a base 111 and two pairs of vibrating arms 112, and is formed into a tuning fork shape by a photolithography technique and an etching technique. ing.
The piezoelectric piece 210 is made of a piezoelectric material, and for example, a quartz member is used.

  For example, as shown in FIG. 1, the base 111 has both main surfaces formed in a rectangular shape in a flat plate shape.

  For example, as shown in FIG. 1, the two pairs of vibrating arm portions 112 are extended in the same direction from a predetermined one side surface of the base portion 111.

  The excitation electrode 121, the connection electrode 122, the wiring part 123, and the frequency adjusting electrode 130 are, for example, films having a laminated structure made of a metal in which a gold layer is provided on a chromium layer, and are film formation objects. The piezoelectric piece 110 is formed in a predetermined shape at a predetermined position.

For example, as shown in FIG. 1, the excitation electrode 121 is provided in a pair of four on each vibration arm 112, and the surface of the vibration arm 112 that is flush with one main surface of the base 111, A surface of the vibrating arm 112 that is flush with the other main surface of the base 111, a surface of the vibrating arm 112 facing the adjacent vibrating arm 112, and a surface facing the adjacent vibrating arm 112 One is provided on each of the opposing surfaces of the vibrating arm portion 112.
The excitation electrode 121 has the same vibration as that of the excitation electrode 121a provided on the surface of the vibrating arm portion 112 provided on the surface of the vibrating arm portion 112 that is flush with one main surface of the base 111. Electrically connected to the excitation electrode 121 provided on the surface of the vibrating arm portion 112 provided on the surface of the vibrating arm portion 112 which is the arm portion 112 and is flush with the other main surface of the base portion 111. Has been.
In addition, the excitation electrode 121c is provided on the surface of the vibrating arm portion 112 that faces the adjacent vibrating arm portion 112 and the surface of the vibrating arm portion 112 that faces the adjacent vibrating arm portion 112. It is electrically connected to the excitation electrode 121d provided on the surface of the opposing vibrating arm portion 112.
Therefore, the excitation electrodes 121 provided on the two opposite surfaces of the same vibrating arm portion 112 have the same potential.

  For example, as illustrated in FIG. 1, the connection electrodes 223 are in pairs, and are provided from one main surface of the base 111 to the other main surface of the base 111, When viewed, it is provided so as to be positioned at both ends of the side of the base 111 opposite to the side of the base 111 in contact with the vibrating arm 112.

  The wiring part 123 is provided on the piezoelectric piece 110 so as to electrically connect between the predetermined excitation electrodes 122 or between the predetermined excitation electrode 121 and the connection electrode 122.

  Therefore, one connection electrode 122 is electrically connected to the excitation electrode 121 a provided on one vibration arm part 112 and the excitation electrode 121 c provided on the other vibration arm part 112 by the wiring part 123. Has been. At this time, the excitation electrodes 122 provided on the opposing surfaces in the same vibrating arm portion 112 are electrically connected by the wiring portion 123.

As shown in FIG. 1, the frequency adjustment electrodes 130 form a pair, and one each is provided on the distal end side of the surface of the vibrating arm portion 112 that is flush with both main surfaces of the base portion 111. .
The frequency adjusting electrode 130 is a film having a laminated structure made of metal in which a gold layer is provided on a chromium layer, for example.
In addition, the frequency adjustment electrode 130 is thicker than the excitation electrode 121, the connection electrode 123, and the wiring portion 124.

  Such a piezoelectric vibrating element 100 has a structure in which two pairs of vibrating arms 112 are vibrated by applying an alternating voltage to two pairs of connection electrodes 122.

When the electrical state when the vibrating arm portion 112 is vibrating is instantaneously captured, in one vibrating arm portion 112, two predetermined excitation electrodes 121 of one vibrating arm portion 112 have a positive potential, Two other predetermined excitation electrodes 121 of the vibrating arm portion 112 have a negative potential, and an electric field is generated in a direction from the two predetermined excitation electrodes 121 toward the other two predetermined excitation electrodes 121.
At this time, in the other vibrating arm portion 112, the predetermined two excitation electrodes 121 of the other vibrating arm portion 112 have a negative potential, and the other two predetermined excitation electrodes 121 of the other vibrating arm portion 112 have a positive potential. An electric field is generated in a direction from the other two predetermined excitation electrodes 121 toward the two predetermined excitation electrodes 121.
Therefore, in the piezoelectric vibrating element 100, an alternating voltage is connected to the two pairs of connection electrodes 122, and an electric field is generated in each vibrating arm portion 112, whereby an expansion and contraction phenomenon occurs in each vibrating arm portion 112, and the vibrating arm portion. Bend and vibrate at the resonance frequency set to 112.
In addition, such a piezoelectric vibration element 100 has a configuration in which the resonance frequency can be adjusted by increasing or decreasing the amount of metal constituting the frequency adjustment electrode 130 provided in each vibration arm portion 112. ing.

  In the piezoelectric vibration element 100 as an example of an electronic component element in which the film forming method according to the embodiment of the present invention is used, for example, for frequency adjustment having a thick film thickness as compared with the excitation electrode 121, the connection electrode 122, and the wiring part 124. The electrode 130 is formed and formed at a predetermined position of the piezoelectric piece 110 so as to have a predetermined shape by using the film forming method according to the embodiment of the present invention.

Next, a film forming method according to an embodiment of the present invention will be described.
The film formation method according to the embodiment of the present invention includes a mask placement process, a film formation process, and a mask removal process.
Here, in the film forming method according to the embodiment of the present invention, the film 130 having a predetermined shape is formed by forming the frequency adjusting electrode 130 on the piezoelectric piece 110 which is the film formation target of the piezoelectric vibration element 200 described above. The case of forming will be described as an example.
Hereinafter, the piezoelectric piece 110 will be described as a film formation object H (see FIG. 3B), and the frequency adjustment electrode 130 will be described as a film M2 formed on the film formation object (see FIG. 3B).

(Mask placement process)
As shown in FIG. 2, the mask placement process penetrates from one main surface to the other main surface, and the size of the opening on one main surface side is larger than the opening on the other main surface side. In this step, one of the main surfaces of the film formation mask 140 having the film formation space 141 is brought into contact with the film formation target H and the film formation mask 140 is arranged.

The film formation mask 140 is made of, for example, metal and is formed in a flat plate shape.
The film formation mask 140 has a film formation space 141 penetrating from one main surface of the film formation mask 140 to the other main surface of the film formation mask 140.

In the film formation space 141, the size of the opening on one main surface side of the film formation mask 140 is larger than the size of the opening on the other main surface side of the film formation mask 140.
Therefore, when the opening of the film formation space 141 is viewed from one main surface side of the film formation mask 140, the film formation mask 140 is within the opening portion on one main surface side of the film formation mask 140. When the opening on the other main surface side of the film formation mask 140 is located on the edge side, and the opening of the film formation space 141 is viewed from the other main surface side of the film formation mask 140, the film formation The opening on one main surface side of the mask 140 is invisible.

The size of the opening on one main surface side of the film formation space 141 and the size of the opening on the other main surface side are the film M2 to be formed on the film formation target H after the film forming step described later. 3 (see FIG. 3B) is the same size as the frequency adjusting electrode 130.
Therefore, the size of the opening of the film formation space 141 on the other main surface side of the film formation mask 140 is at least smaller than the size of the frequency adjustment electrode 130 (see FIG. 1).
Further, the size of the opening of the film formation space 141 on one main surface side of the film formation mask 140 is equal to or larger than the size of the frequency adjustment electrode 130.

In the mask arrangement step, one main surface of the film formation mask 140 is brought into contact with the film formation target H as shown in FIG.
At this time, when the piezoelectric piece 110 that is the film formation target H is viewed from the film formation mask 140 side, the frequency adjustment electrode 130 is formed on the bottom surface of the film formation space 141 on the other main surface side of the film formation mask 140. The part where is formed is located.

Note that the film formation mask 140 is configured to be held in a state of being in contact with a predetermined position of the film formation target H after the mask placement process by using, for example, a magnet.
Here, the structure in which the film formation mask 140 is held in a state of being in contact with a predetermined position of the film formation object H after the mask arrangement process by the magnet is described. For example, a screw may be used as long as it can be held in contact with a predetermined one of H.

(Film formation process)
The film formation step is a step of forming a film in a direction facing the inside of the film formation space 141 from the other main surface side of the film formation mask 140.
In the film formation process, for example, sputtering is used, and as shown in FIGS. 3A and 3B, the film formation source S is used for film formation with respect to one main surface of the film formation mask 140. A film M (M1, M2) is formed on the other main surface side of the mask 140 in a direction from the other main surface side of the film formation mask 140 toward one main surface side of the film formation mask 140. The
Therefore, the film M formed after the film forming process is formed in the film forming space 141 and the film M1 formed on the other main surface side of the film forming mask 140 as shown in FIG. And a film M2 formed on the film-forming object H facing the surface.

At this time, as described above, in the film formation mask 140, the size of the opening of the film formation space 141 on one main surface side of the film formation mask 140 is the other main surface side of the film formation mask 140. This is larger than the size of the opening of the film formation space 141.
Further, in the film forming process, one main surface of the film formation mask 140 is brought into contact with the deposition target H, and is directed from the other main surface side of the film formation mask 140 toward the one main surface side. A film M is formed.
For this reason, the film M2 formed on the film formation target H has a surface in the film formation space 141 provided on the film formation mask 140 with the surface facing the surface in contact with the film formation target H. Do not touch.
Here, the surface of the film M2 formed on the film formation object H is in contact with the film formation object H and the surface of the film M2 formed on the film formation object H opposite to this surface is formed. A side surface of the film M2 formed on the film formation object H is defined as a main surface of the film M2 formed on the film formation object H and a surface in contact with both main surfaces of the film M2 formed on the film formation object H. And
In other words, the surface of the film M2 formed on the film formation target H is in contact with the surface in the film formation space 141 of the film formation mask 140 and the surface in contact with the film formation target 140. The surface opposite to the surface in contact with the object is not in contact with the surface in the film formation space 141 of the film formation mask 140.

Therefore, in the film formation process, the area where the side surface of the film M2 formed on the film formation object H and the surface in the film formation space 141 provided in the film formation mask 140 are in contact with each other is smaller than that in the conventional case. The film is formed on the film formation target H in a small state.
For this reason, in the film forming process, the adhesion strength between the film M2 formed on the film formation target H and the film forming mask 140 can be weakened as compared with the conventional case.

(Mask removal process)
The mask removal step is a step of removing the film formation mask 140 from the film formation target H that has been formed into a film.
In the mask removal process, the film formation mask 140 is removed in a state where the adhesion strength between the film M2 formed on the film formation target H and the film formation mask 140 is weaker than in the conventional case.
Therefore, in the mask removing step, the adhesion strength between the film formation target H and the film M2 formed on the film formation target H is such that the film M2 formed on the film formation target H and the film formation mask 140 The film formation mask 140 can be removed in a state stronger than the adhesion strength, and the film can be prevented from being peeled off from the film formation target H when the film formation mask 140 is removed.

According to such a film formation method according to the embodiment of the present invention, the size of the opening of the film formation space 141 on one main surface side of the film formation mask 140 is the other main surface of the film formation mask 140. When the film M is formed by bringing one main surface of the film formation mask 140 into contact with the film formation object H because it is larger than the opening of the film formation space 141 on the surface side, the film formation object H The film M2 can be formed without contacting the surface of the film M2 that is in contact with the film formation target H without contacting the surface in the film formation space 141 provided in the film formation mask 140.
Therefore, according to the film forming method according to the embodiment of the present invention, the adhesion strength between the film forming mask 140 and the formed film M2 is higher than that of the conventional film forming method. Since the film M2 can be formed in a state where the adhesion strength between the H and the formed film M2 is weaker than the adhesion strength, when the film formation mask 140 is removed, the film M2 formed from the film formation target H It can prevent peeling off together.
Therefore, according to the film forming method according to the embodiment of the present invention, the adhesion strength between the film M2 formed on the film formation target H and the film formation target H is formed on the film formation target H. Since the adhesion strength between the formed film M2 and the film formation mask 140 facing the inside of the film formation space 141 can be increased compared to the conventional film formation method, the film formation mask 140 is removed. The film M ″ can be prevented from being peeled off from the film formation target H, and the productivity can be improved.

  In addition, although the case where a film | membrane is formed using a sputtering method is demonstrated, you may use the vapor deposition method, for example.

  In addition, when the cross-sectional shape of the film-forming mask is viewed, the surface of the film-forming mask facing the film-forming space is shown in a tapered shape. When the opening is viewed from the surface side, if it is located in the opening on the other main surface side of the film formation space on the inner edge side of the opening on one main surface side of the film formation space, for example, When the cross-sectional shape of the film-forming mask is viewed, the surface of the film-forming mask facing the film-forming space may be stepped.

  In addition, a case where the surface of the film formed on the film formation object and in contact with the film formation object is in contact with the surface in the film formation space provided in the film formation mask will be described. However, the surface of the film that is formed on the film formation object that faces the surface that is in contact with the film formation object is in contact with the surface in the film formation space provided on the film formation mask. If not, for example, the surface of the film formed on the film formation object that is in contact with the film formation object is not in contact with the area in the film formation space provided in the film formation mask. Also good.

  Moreover, although the case where the frequency adjusting electrode is formed by the film forming method according to the embodiment of the present invention has been described as an example, it may be used when, for example, the excitation electrode, the connection electrode, and the wiring portion are formed.

  Moreover, although the case where the piezoelectric piece of the piezoelectric vibration element has a tuning fork shape has been described, for example, the piezoelectric piece may have a flat plate shape. Further, for example, a piezoelectric piece having a convex portion on the main surface may be used. Further, for example, a piezoelectric piece having a concave portion on the main surface may be used.

  Moreover, although the case where the electronic component element by which the film | membrane was formed into a film-forming object is a piezoelectric vibration element is demonstrated, the optical component by which the antireflection film is provided in the glass of a transparent member, for example There may be an element.

100, 200 Piezoelectric vibration element 110, 210 Piezoelectric piece 111, 211 Base 112, 212 Vibration arm part 121, 221 Excitation electrode 122, 222 Connection electrode 123, 223 Wiring part 130, 230 Frequency adjustment electrode 140, 240 Film formation mask 141, 241 Film formation space M Film M1 Film formed on the film formation mask M2 Film formed on the film formation object H Film formation object S Film formation source

Claims (1)

Film formation having a film formation space that penetrates from one main surface to the other main surface, and in which the size of the opening on one main surface side is larger than the size of the opening on the other main surface side A mask placement step for placing the film-formation mask in contact with one main surface of the film-use mask;
A film forming step of forming a film in a direction facing the inside of the film forming space from the other main surface side of the film forming mask;
A mask removing step of removing the film-forming mask from the film-formed object to be formed;
A film forming method comprising:

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