JPH06224677A - Frequency adjusting method for piezoelectric resonator - Google Patents

Frequency adjusting method for piezoelectric resonator

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Publication number
JPH06224677A
JPH06224677A JP2728293A JP2728293A JPH06224677A JP H06224677 A JPH06224677 A JP H06224677A JP 2728293 A JP2728293 A JP 2728293A JP 2728293 A JP2728293 A JP 2728293A JP H06224677 A JPH06224677 A JP H06224677A
Authority
JP
Japan
Prior art keywords
frequency
piezoelectric
electrode
piezoelectric resonator
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2728293A
Other languages
Japanese (ja)
Inventor
Hiroyuki Yamamoto
裕之 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2728293A priority Critical patent/JPH06224677A/en
Publication of JPH06224677A publication Critical patent/JPH06224677A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To improve the working precision for frequency adjustment to prevent the occurrence of defective articles and the degradation of characteristics by laminating a vapor-deposited film on the surface of an oscillation electrode to adjust the frequency. CONSTITUTION:Mask members 12 which are provided with holes 13 so that parts of oscillation electrodes 4 are exposed are put on upper and lower faces of a piezoelectric mother substrate 9, and the film thickness which corresponds to the measured value of a frequency and should be added is calculated, and a metallic film is laminated again on parts of oscillation electrodes 4 by vapor-deposition or sputtering based on this film thickness. Metallic plates or heat-resisting tapes are used as these mask members 12, and dimensions of holes 13 may be equal to or larger than those of oscillation electrodes 4. The frequency is measured, and the metallic film is laminated furthermore in the same manner in accordance with the measured value if necessary, and it is adjusted to a required frequency fo. Sealing plates which are provided with recessed parts so that cavities are formed in parts of oscillation electrodes 4 are laminated and adhered on upper and lower faces of the piezoelectric mother substrate 9, and they are unified and cut and are provided with an external electrode, thus forming a piezoelectric resonator.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、圧電共振子の振動電極
部に膜を形成して周波数を調整するようにした周波数調
整方法に関し、例えば、エネルギー閉じ込め型の厚み縦
振動を利用した圧電共振子の、電極部に再蒸着により金
属膜を形成して周波数を調整するようにした圧電共振子
の周波数調整方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a frequency adjusting method for adjusting a frequency by forming a film on a vibrating electrode portion of a piezoelectric resonator, and for example, a piezoelectric resonance utilizing an energy trap type thickness longitudinal vibration. The present invention relates to a frequency adjusting method for a piezoelectric resonator in which a metal film is formed on the electrode portion of the child by redeposition to adjust the frequency.

【0002】[0002]

【従来の技術】従来よりチップ型圧電共振子の一例とし
て、図5及び図6に示す構造のエネルギー閉じ込め型の
厚み縦振動を利用したものがある。この圧電共振子1
は、圧電基板3に振動電極4と引出電極5を設けて構成
した圧電素子2の上下の両面に、例えばアルミナ等の絶
縁性の封止部材6を積層して接着し、引出電極5と導通
させて外部の両側面から端部に延ばして外部電極7を設
けて構成している。上記の圧電素子2は、圧電用セラミ
ックスからなるほぼ矩形の圧電基板3の上下の両主面
に、この圧電基板3を挟んで対向する振動電極4、及び
これに導通させてそれぞれ各面で反対側の端部に沿って
引出電極5を設けて形成している。この圧電素子2に封
止部材6を積層して接着する場合、封止部材6の振動電
極4に対向する部分に形成された凹部8により振動空間
を形成している。そして、この圧電共振子1の外部電極
7に電圧を負荷することにより圧電素子2の振動電極4
部に共振振動又は反共振振動を生じさせて、外部に取り
出すようにしている。この厚み縦振動の周波数fo(H
z)と圧電基板の厚みt(mm)との関係は、次式のよう
に表される。 fo=K/t ここで、K=v/2 (vは物体中の音速(m/秒))
2. Description of the Related Art Conventionally, as an example of a chip-type piezoelectric resonator, there is one utilizing energy trap type thickness longitudinal vibration having a structure shown in FIGS. This piezoelectric resonator 1
Is laminated on and bonded to the upper and lower surfaces of the piezoelectric element 2 formed by providing the vibrating electrode 4 and the extraction electrode 5 on the piezoelectric substrate 3 and adhering the insulating sealing member 6 such as alumina to the extraction electrode 5. The external electrodes 7 are provided so as to extend from both sides of the outside to the ends. The above-mentioned piezoelectric element 2 has a substantially rectangular piezoelectric substrate 3 made of piezoelectric ceramics, and has both upper and lower main surfaces facing each other with the vibrating electrodes 4 facing each other with the piezoelectric substrate 3 interposed therebetween, and the vibrating electrodes 4 facing each other. The extraction electrode 5 is provided along the end portion on the side. When the sealing member 6 is laminated and adhered to the piezoelectric element 2, the vibrating space is formed by the recess 8 formed in the portion of the sealing member 6 facing the vibrating electrode 4. Then, by applying a voltage to the external electrode 7 of the piezoelectric resonator 1, the vibrating electrode 4 of the piezoelectric element 2
Resonance vibration or anti-resonance vibration is generated in the part and is taken out to the outside. The frequency fo (H
The relationship between z) and the thickness t (mm) of the piezoelectric substrate is expressed by the following equation. fo = K / t, where K = v / 2 (v is the speed of sound in the object (m / sec))

【0003】圧電共振子1を、その周波数を調整して製
造する従来の方法は、先ず、図7(a)に示すように、
圧電用セラミックスの母基板を、所定の周波数で発振す
るべく計算で求めた厚みに加工し、基板の両面に金属蒸
着により金属膜10を形成し、3〜5KV/mmの電圧を
印加して分極して圧電母基板9を形成する。そして、共
振周波数、反共振周波数、発振周波数を測定し、所要の
周波数には膜厚が不足であればその周波数になるまで蒸
着を繰り返す。次いで、図7(b)に示すように、所要
の電極形状にエッチングレジストインク11を塗布し、
エッチングして不要部の金属膜を除去し、その後レジス
トインクを除去し、図7(c)に示すように、所要の形
状の振動電極4、引出電極5に形成する。ここで、また
発振周波数を測定し、この測定値に応じて周波数調整用
のインクを振動電極4面に塗布して所要の周波数(f
o)に調整する。
In the conventional method of manufacturing the piezoelectric resonator 1 by adjusting its frequency, first, as shown in FIG.
A mother substrate of piezoelectric ceramics is processed to have a thickness obtained by calculation so as to oscillate at a predetermined frequency, metal films 10 are formed on both sides of the substrate by metal deposition, and a voltage of 3 to 5 KV / mm is applied to polarize the film. Then, the piezoelectric mother substrate 9 is formed. Then, the resonance frequency, the anti-resonance frequency, and the oscillation frequency are measured, and if the required frequency is insufficient for the film thickness, vapor deposition is repeated until the frequency is reached. Next, as shown in FIG. 7B, the etching resist ink 11 is applied to a desired electrode shape,
The unnecessary portion of the metal film is removed by etching, the resist ink is removed thereafter, and as shown in FIG. 7C, the vibrating electrode 4 and the extraction electrode 5 having a required shape are formed. Here, the oscillation frequency is measured again, and ink for frequency adjustment is applied to the surface of the vibrating electrode 4 according to the measured value to obtain the required frequency (f
Adjust to o).

【0004】[0004]

【発明が解決しようとする課題】しかしながら上記のよ
うに、圧電共振子の周波数を測定し、この測定値に応じ
て周波数調整用のインクを電極面に塗布して所要の周波
数(fo)に調整する方法では、周波数調整用のインク
を精度よく塗布するのが困難であり不良品の発生率が高
いとともに、インクの特性が劣化して耐久性が劣るとい
う問題点があった。
However, as described above, the frequency of the piezoelectric resonator is measured, and ink for frequency adjustment is applied to the electrode surface according to the measured value to adjust it to the required frequency (fo). With this method, there is a problem that it is difficult to apply the frequency adjustment ink with high accuracy, the occurrence rate of defective products is high, and the characteristics of the ink are deteriorated, resulting in poor durability.

【0005】本発明は上記従来の問題点を解決するため
になされたもので、周波数調整の加工精度をよくすると
ともに、不良品の発生を防止し、特性の劣化を防止する
圧電共振子の周波数調整方法を提供することを目的とし
ている。
The present invention has been made in order to solve the above-mentioned conventional problems, and improves the processing accuracy of frequency adjustment, prevents the generation of defective products, and prevents the deterioration of characteristics of the piezoelectric resonator. The purpose is to provide a method of adjustment.

【0006】[0006]

【課題を解決するための手段】本発明に係る圧電共振子
の周波数調整方法は、圧電用セラミックスの基板の上下
の両主面に金属膜を形成した後、分極して圧電基板を形
成し、上記金属膜の不要部を除去して所要の形状の電極
を形成し、対向する振動電極の周波数を測定して周波数
を調整する圧電共振子の周波数調整方法において、測定
した周波数に対応して振動電極面に蒸着膜を形成するこ
とにより周波数を調整することを特徴とする。
A method of adjusting a frequency of a piezoelectric resonator according to the present invention comprises forming metal films on both upper and lower main surfaces of a piezoelectric ceramic substrate and then polarizing the piezoelectric substrate to form a piezoelectric substrate. In the frequency adjusting method of the piezoelectric resonator, in which the unnecessary portion of the metal film is removed to form an electrode having a desired shape, and the frequency of the opposing vibrating electrode is measured to adjust the frequency, the vibration is generated according to the measured frequency. It is characterized in that the frequency is adjusted by forming a vapor deposition film on the electrode surface.

【0007】[0007]

【作用】本発明に係る圧電共振子の周波数調整方法によ
れば、圧電用セラミックスの基板の上下の両主面に金属
膜を形成し、電圧を印加して圧電基板を形成し、エッチ
ングにより不要部の金属膜を除去して所要の形状の振動
電極及び引出電極を形成し、振動電極の周波数を測定
し、振動電極の部分以外をマスクして該振動電極の周波
数に対応した厚さに蒸着膜を形成して周波数を調整す
る。このように周波数を調整する本発明によれば、蒸着
により金属膜をそのまま振動電極面に形成し、周波数を
調整することから、従来のマスクしてインクを塗布する
等による周波数調整方法に比べて工数及び形成時間を削
減でき、この点からも生産性を向上でき、製造コストを
低減できる。また、インクの塗布によるような膜厚のば
らつきがなくなり、加工により品質がばらつくことが防
げ、それだけ不良品率を低減できる。さらに、インクの
劣化による電気特性の変化を防止でき耐久性を向上で
き、これによっても品質に対する信頼性を向上できる。
According to the method of adjusting the frequency of the piezoelectric resonator according to the present invention, metal films are formed on both upper and lower main surfaces of the piezoelectric ceramic substrate, a voltage is applied to form the piezoelectric substrate, and it is unnecessary by etching. Remove the metal film from the part to form the vibrating electrode and the extraction electrode in the required shape, measure the frequency of the vibrating electrode, mask the part other than the vibrating electrode part, and vapor-deposit it to a thickness corresponding to the frequency of the vibrating electrode. Form a film to adjust the frequency. According to the present invention which adjusts the frequency in this way, since the metal film is directly formed on the vibrating electrode surface by vapor deposition and the frequency is adjusted, compared to the conventional frequency adjusting method such as masking and applying ink. The number of steps and the forming time can be reduced, the productivity can be improved in this respect, and the manufacturing cost can be reduced. Further, there is no variation in the film thickness due to the application of ink, it is possible to prevent variation in quality due to processing, and the defective product rate can be reduced accordingly. Further, it is possible to prevent changes in electrical characteristics due to ink deterioration and improve durability, which also improves reliability in quality.

【0008】[0008]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1及び図2は本発明の一実施例による圧電共振
子の周波数調整方法を説明するための図である。本実施
例では、上述した封止基板に圧電素子を積層する厚み縦
振動を利用する圧電共振子を例にとって説明する。上記
従来例に相当する部分には同一符号を付している。本実
施例の圧電共振子1は、図5及び図6に示すものと同様
な構造に、圧電素子2の振動電極4の表面部分に振動空
間を形成して、圧電基板3の上下の両面に、封止部材6
を積層して接着し、引出電極5と導通させて外部の両側
面から端部に延ばして外部電極7を設けて構成してい
る。ただし、本実施例の振動電極4の表面には周波数調
整のための金属膜が付着されている。
Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are views for explaining a method of adjusting the frequency of a piezoelectric resonator according to an embodiment of the present invention. In the present embodiment, a piezoelectric resonator that uses thickness longitudinal vibration in which a piezoelectric element is laminated on the above-described sealing substrate will be described as an example. The same reference numerals are attached to the portions corresponding to the above-mentioned conventional example. The piezoelectric resonator 1 of the present embodiment has a structure similar to that shown in FIGS. 5 and 6, in which a vibration space is formed on the surface portion of the vibration electrode 4 of the piezoelectric element 2, and the upper and lower surfaces of the piezoelectric substrate 3 are formed. , Sealing member 6
Are laminated and adhered to each other so as to be electrically connected to the extraction electrode 5 and extended from both side surfaces of the outside to the end portion to provide the external electrode 7. However, a metal film for frequency adjustment is attached to the surface of the vibrating electrode 4 of this embodiment.

【0009】以下、圧電共振子の周波数調整方法を詳細
に説明する。先ず、従来と同様に所要の電極を形成す
る。図7に示すように基板を所定の周波数を発振するよ
うに計算した厚みに加工し、その両面に蒸着により金属
膜10を形成し(図7(a))、3〜5KV/mmの電圧
を印加して圧電母基板9を形成する。そして、共振周波
数、反共振周波数、発振周波数を測定し、所要の周波数
には膜厚が不足であればその周波数になるまで蒸着を繰
り返す。次いで、所要の電極形状にエッチングレジスト
インク11を塗布し(図7(b))、エッチングして不
要部の金属膜を除去し、レジストインクを除去し、所要
の形状の電極4,5に形成し(図7(c))、周波数を
測定する。
Hereinafter, a method of adjusting the frequency of the piezoelectric resonator will be described in detail. First, required electrodes are formed as in the conventional case. As shown in FIG. 7, the substrate is processed to have a thickness calculated to oscillate a predetermined frequency, and metal films 10 are formed on both surfaces of the substrate by vapor deposition (FIG. 7 (a)), and a voltage of 3 to 5 KV / mm is applied. By applying, the piezoelectric mother substrate 9 is formed. Then, the resonance frequency, the anti-resonance frequency, and the oscillation frequency are measured, and if the required frequency is insufficient for the film thickness, vapor deposition is repeated until the frequency is reached. Next, the etching resist ink 11 is applied to the required electrode shape (FIG. 7B), and the unnecessary portion of the metal film is removed by etching, and the resist ink is removed to form the electrodes 4 and 5 having the required shape. (FIG. 7C), and the frequency is measured.

【0010】次に、図1及び図2に示すように、振動電
極4部が露出するように穴13を設けたマスク部材12
を圧電母基板9の上下面に重ね、上記周波数の測定値に
応じた加えるべき膜厚を計算し、この膜厚をめどにし
て、蒸着、又はスパッタリングを行って振動電極4の部
分に再度金属膜を積み重ねる。このマスク部材12は、
メタルプレート又は耐熱テープを用い、穴13の大きさ
は振動電極4と同一か又は大きい寸法としてよい。ま
た、一方の振動電極4の部分のみに金属膜を積み重ねる
ように、一方のマスク部材12は穴を設けないものでも
よい。そして、周波数を測定し、必要であれば測定値に
応じてさらに同様にして金属膜を積み重ね、所要の周波
数(fo)に調整する。
Next, as shown in FIGS. 1 and 2, a mask member 12 having a hole 13 so that the vibrating electrode 4 is exposed.
The one on top surface of the piezoelectric mother substrate 9, the film thickness should be added in accordance with the measured value of the frequency is calculated, and the thickness of the prospect, deposition, or again metal portion of the vibrating electrode 4 performs sputtering Stack the membranes. The mask member 12 is
The size of the hole 13 may be the same as or larger than that of the vibrating electrode 4, using a metal plate or a heat-resistant tape. Further, one mask member 12 may not be provided with a hole so that the metal film is stacked only on the one vibrating electrode 4. Then, the frequency is measured, and if necessary, metal films are stacked in the same manner according to the measured value, and the frequency is adjusted to the required frequency (fo).

【0011】続いて、図3に示すように、圧電母基板9
の上下面に、振動電極4の部分に空洞を形成するように
凹部15が設けられた封止板14を積層して接着して、
図3に示すように、一体化した後、図4のA−A線、B
−B線に沿って切断し、外部電極7を設けて、図5及び
図6に示すような圧電共振子を形成する。上記振動空間
のための空洞を形成する方法としては、接着剤に厚みを
持たせて塗布することにより間隙を形成して封止部材6
を積層して接着してもよい。
Subsequently, as shown in FIG. 3, the piezoelectric mother substrate 9
The sealing plate 14 provided with the concave portion 15 so as to form a cavity in the vibrating electrode 4 is laminated and adhered to the upper and lower surfaces of
As shown in FIG. 3, after being integrated, the line AA, B in FIG.
By cutting along the line -B, the external electrode 7 is provided to form a piezoelectric resonator as shown in FIGS. As a method of forming the cavity for the vibration space, a sealing member 6 is formed by applying a thick adhesive to form a gap.
May be laminated and adhered.

【0012】上記実施例のように、蒸着、又はスパッタ
リングを行って振動電極4の部分に再度同一材質の金属
膜を積み重ねて、周波数調整を行っているので、この圧
電共振子の電気特性はインクで調整した従来例のように
劣化しない。また、インク塗布のように、厚み加工の制
御が容易にできるので厚み調整が容易でり、周波数調整
が精度よく実施できる。なお、上記実施例では厚み縦振
動を例にとって説明したが、本発明の適用範囲はこれに
限られるものではなく他のモードの圧電共振子にも適用
でき、特に圧電素子の振動電極の表面に膜を形成して周
波数調整を行う場合に有効である。
As in the above-described embodiment, since the metal film of the same material is again deposited on the vibrating electrode 4 by vapor deposition or sputtering to adjust the frequency, the electric characteristics of this piezoelectric resonator are ink. It does not deteriorate like the conventional example adjusted in. Further, since thickness control can be easily controlled like ink coating, thickness adjustment is easy and frequency adjustment can be performed accurately. Although the thickness longitudinal vibration has been described as an example in the above embodiment, the scope of application of the present invention is not limited to this, and can be applied to piezoelectric resonators of other modes, particularly on the surface of the vibration electrode of the piezoelectric element. This is effective when a film is formed and frequency adjustment is performed.

【0013】[0013]

【発明の効果】以上のように本発明に係る圧電共振子の
周波数調整方法によれば、振動電極の表面に蒸着膜を積
層して周波数を調整するので、厚み調整が容易で、加工
により品質がばらつくことを防ぐことができ、それだけ
不良品率を低減でき、品質を向上できる。また、金属膜
とすることにより、膜の劣化を確実に防止でき圧電共振
子の耐久性を向上でき、品質に対する信頼性を向上でき
る効果がある。
As described above, according to the method for adjusting the frequency of the piezoelectric resonator of the present invention, since the frequency is adjusted by laminating the vapor deposition film on the surface of the vibrating electrode, the thickness can be easily adjusted and the quality can be improved by processing. Can be prevented from varying, and the defective product rate can be reduced and the quality can be improved. Further, by using a metal film, there is an effect that deterioration of the film can be surely prevented, durability of the piezoelectric resonator can be improved, and reliability of quality can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による圧電共振子の周波数調
整方法を説明するためのマスクを積層する状態を示す斜
視図である。
FIG. 1 is a perspective view showing a state in which masks are laminated to explain a method of adjusting a frequency of a piezoelectric resonator according to an embodiment of the present invention.

【図2】上記実施例のマスクを積層して蒸着する状態を
説明する斜視図である。
FIG. 2 is a perspective view illustrating a state in which the masks of the above-described embodiment are stacked and vapor deposited.

【図3】上記実施例により周波数調整した圧電母基板に
封止基板を積層する状態を示す斜視図図である。
FIG. 3 is a perspective view showing a state in which a sealing substrate is laminated on a piezoelectric mother substrate whose frequency is adjusted according to the above embodiment.

【図4】上記実施例の一体化した状態を示す斜視図であ
る。
FIG. 4 is a perspective view showing an integrated state of the above embodiment.

【図5】圧電共振子を示す分解斜視図である。FIG. 5 is an exploded perspective view showing a piezoelectric resonator.

【図6】上記圧電共振子を示す斜視図である。FIG. 6 is a perspective view showing the piezoelectric resonator.

【図7】周波数調整をした振動電極を形成する工程を説
明する斜視図である。
FIG. 7 is a perspective view illustrating a step of forming a frequency-adjusted vibrating electrode.

【符号の説明】[Explanation of symbols]

1 圧電共振子 2 圧電素子 3 圧電基板 4 振動電極 5 引出電極 9 圧電母基板 12 マスク部材 13 穴 1 Piezoelectric Resonator 2 Piezoelectric Element 3 Piezoelectric Substrate 4 Vibrating Electrode 5 Extraction Electrode 9 Piezoelectric Mother Substrate 12 Mask Member 13 Hole

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 圧電用セラミックスの基板の上下の両主
面に金属膜を形成した後、分極して圧電基板を形成し、
上記金属膜の不要部を除去して所要の形状の電極を形成
し、対向する振動電極の周波数を測定して周波数を調整
する圧電共振子の周波数調整方法において、測定した周
波数に対応して振動電極面に蒸着膜を形成することによ
り周波数を調整することを特徴とする圧電共振子の周波
数調整方法。
1. A piezoelectric substrate is formed by forming metal films on both upper and lower main surfaces of a piezoelectric ceramic substrate, and forming a piezoelectric substrate by polarization.
In the frequency adjusting method of the piezoelectric resonator, in which the unnecessary portion of the metal film is removed to form an electrode having a desired shape, and the frequency of the opposing vibrating electrode is measured to adjust the frequency, the vibration is generated according to the measured frequency. A frequency adjusting method for a piezoelectric resonator, characterized in that a frequency is adjusted by forming a vapor deposition film on an electrode surface.
JP2728293A 1993-01-22 1993-01-22 Frequency adjusting method for piezoelectric resonator Pending JPH06224677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2728293A JPH06224677A (en) 1993-01-22 1993-01-22 Frequency adjusting method for piezoelectric resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2728293A JPH06224677A (en) 1993-01-22 1993-01-22 Frequency adjusting method for piezoelectric resonator

Publications (1)

Publication Number Publication Date
JPH06224677A true JPH06224677A (en) 1994-08-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2728293A Pending JPH06224677A (en) 1993-01-22 1993-01-22 Frequency adjusting method for piezoelectric resonator

Country Status (1)

Country Link
JP (1) JPH06224677A (en)

Cited By (6)

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JP2002335141A (en) * 2001-03-05 2002-11-22 Agilent Technol Inc Method for manufacturing resonator
WO2004030113A1 (en) * 2002-09-27 2004-04-08 Innochips Technology Piezoelectric vibrator and fabricating method thereof
US6772491B2 (en) 2000-12-25 2004-08-10 Murata Manufacturing Co., Ltd. Manufacturing method for ceramic oscillator
US7594307B2 (en) 2004-09-07 2009-09-29 Murata Manufacturing Co., Ltd. Method for manufacturing piezoelectric resonator
JP2011216940A (en) * 2010-03-31 2011-10-27 Nippon Dempa Kogyo Co Ltd Crystal device and method for manufacturing same
KR101346557B1 (en) * 2011-12-01 2014-01-07 한국과학기술원 Device for sensing damage of structure

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6772491B2 (en) 2000-12-25 2004-08-10 Murata Manufacturing Co., Ltd. Manufacturing method for ceramic oscillator
JP2002335141A (en) * 2001-03-05 2002-11-22 Agilent Technol Inc Method for manufacturing resonator
WO2004030113A1 (en) * 2002-09-27 2004-04-08 Innochips Technology Piezoelectric vibrator and fabricating method thereof
CN100413111C (en) * 2002-09-27 2008-08-20 英诺晶片科技股份有限公司 Piezoelectric vibrator and fabricating method thereof
US7429816B2 (en) 2002-09-27 2008-09-30 Innochips Technology Piezoelectric vibrator and fabricating method thereof
US7786655B2 (en) 2002-09-27 2010-08-31 Innochips Technology Piezoelectric vibrator with internal electrodes
US8186027B2 (en) 2002-09-27 2012-05-29 Innochips Technology Method of fabricating a piezoelectric vibrator
US7594307B2 (en) 2004-09-07 2009-09-29 Murata Manufacturing Co., Ltd. Method for manufacturing piezoelectric resonator
JP2011216940A (en) * 2010-03-31 2011-10-27 Nippon Dempa Kogyo Co Ltd Crystal device and method for manufacturing same
US8319404B2 (en) 2010-03-31 2012-11-27 Nihon Dempa Kogyo, Co., Ltd. Surface-mountable quartz-crystal devices and methods for manufacturing same
KR101346557B1 (en) * 2011-12-01 2014-01-07 한국과학기술원 Device for sensing damage of structure

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